Abstract: The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).

Abstract: Provided are a sputtering device and a method of forming a layer using the same. The method of forming a layer using the sputtering device includes: placing a substrate within a chamber; depositing target particles emitted from a target, which faces the substrate, on the substrate using a sputtering process; and horizontally moving a plurality of shield rods, which are installed in a shield mask disposed between the substrate and the target and are separated from each other along a first direction, during the sputtering process.

Abstract: A thin film transistor substrate includes a base substrate and a thin film transistor. The base substrate includes a gate line and a data line. The thin film transistor is connected to the gate line and the data line. The thin film transistor includes a gate electrode, a semiconductor pattern and source, drain electrodes. The gate electrode is disposed on the base substrate. The semiconductor pattern overlaps with the gate electrode. The source, drain electrodes is spaced apart from each other. The source electrode includes a first source layer, a second source layer disposed on the first source layer and a first diffusion barrier disposed between the first source layer and second source layer. The drain electrode includes a first drain layer, a second drain layer disposed on the first drain layer and a second diffusion barrier disposed between the first drain layer and second drain layer.

Abstract: Provided is a thin film transistor panel including: a substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the gate electrode; an oxide semiconductor positioned on the gate insulating layer and including an oxide layer; and a source electrode and a drain electrode positioned on the oxide semiconductor and facing each other based on a channel of the oxide semiconductor, in which the oxide layer overlaps the gate electrode and is positioned on the oxide semiconductor.

Abstract: An organic light emitting display device includes a thin film transistor including a semiconductor layer, a gate electrode, and source and drain electrodes, a pixel electrode connected to the thin film transistor, the pixel electrode including a first layer, a second layer disposed on the first layer and including silver, and a third layer including a carbon-based material and covering an upper portion and lateral surface of the second layer, an organic emission layer including an organic light emitting member and disposed on the pixel electrode, and a common electrode disposed on the organic emission layer.

Abstract: The method of forming a layer using the sputtering device includes: placing a substrate within a chamber; depositing target particles emitted from a target, which faces the substrate, on the substrate using a sputtering process; and horizontally moving a plurality of shield rods, which are installed in a shield mask disposed between the substrate and the target and are separated from each other along a first direction, during the sputtering process.

Abstract: An array test modulator, including a first glass; a second glass facing the first glass and including a common electrode; a liquid crystal layer between the first glass and the second glass; and a reflection layer between the second glass and the liquid crystal layer and including a metal oxide layer.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 ? or more to 144 ? or less.

Abstract: A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device.

Abstract: Provided is a metal wire. The metal wire includes a copper layer, and at least one barrier layer. The barrier layer is disposed on at least one of an upper part and a lower part of the copper layer. The barrier layer includes an alloy including copper, nickel, and zinc.

Abstract: The present invention relates to a display device and a manufacturing method thereof, wherein a spoilage layer generated in a manufacturing process is removed, and a manufacturing method of a display device according to an exemplary embodiment of the present invention includes: forming a thin film transistor on a substrate including a plurality of pixel areas; forming a pixel electrode connected to the thin film transistor in the pixel area; forming a sacrificial layer on the pixel electrode; forming a barrier layer on the sacrificial layer; forming a common electrode on the barrier layer; forming a roof layer on the common electrode; patterning the barrier layer, the common electrode, and the roof layer to exposed a portion of the sacrificial layer thereby forming an injection hole; removing the sacrificial layer to form a microcavity for a plurality of pixel areas; removing the barrier layer.

Abstract: A metal wire included in a display device, the metal wire includes a first metal layer including a nickel-chromium alloy, a first transparent oxide layer disposed on the first metal layer, and a second metal layer disposed on the first transparent oxide layer.

Abstract: A thin film transistor substrate includes a base substrate and a thin film transistor. The base substrate includes a gate line and a data line. The thin film transistor is connected to the gate line and the data line. The thin film transistor includes a gate electrode, a semiconductor pattern and source, drain electrodes. The gate electrode is disposed on the base substrate. The semiconductor pattern overlaps with the gate electrode. The source, drain electrodes is spaced apart from each other. The source electrode includes a first source layer, a second source layer disposed on the first source layer and a first diffusion barrier disposed between the first source layer and second source layer. The drain electrode includes a first drain layer, a second drain layer disposed on the first drain layer and a second diffusion barrier disposed between the first drain layer and second drain layer.

Abstract: The present invention relates to a display device and a manufacturing method thereof, wherein a spoilage layer generated in a manufacturing process is removed, and a manufacturing method of a display device according to an exemplary embodiment of the present invention includes: forming a thin film transistor on a substrate including a plurality of pixel areas; forming a pixel electrode connected to the thin film transistor in the pixel area; forming a sacrificial layer on the pixel electrode; forming a barrier layer on the sacrificial layer; forming a common electrode on the barrier layer; forming a roof layer on the common electrode; patterning the barrier layer, the common electrode, and the roof layer to exposed a portion of the sacrificial layer thereby forming an injection hole; removing the sacrificial layer to form a microcavity for a plurality of pixel areas; removing the barrier layer.

Abstract: The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).

Abstract: A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.

Abstract: A thin film transistor array panel is provided and includes a gate line, a gate insulating layer covering the gate line, a semiconductor layer disposed on the gate insulating layer, and a data line and a drain electrode disposed on the semiconductor layer. The data line and the drain electrode have a dual-layered structure including a lower layer and an upper layer with the lower layer having a first portion protruded outside the upper layer and the semiconductor layer having a second portion protruded outside the edge of the lower layer.

Abstract: The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).

Abstract: A metal wire included in a display device, the metal wire includes a first metal layer including a nickel-chromium alloy, a first transparent oxide layer disposed on the first metal layer, and a second metal layer disposed on the first transparent oxide layer.

Abstract: A liquid crystal display includes a substrate; a first electrode on the substrate; a second electrode on the first electrode and separated from the first electrode; a cavity defined between the first electrode and the second electrode; a first protection layer on the second electrode; a cover layer on the first protection layer; and a liquid crystal layer including liquid crystal molecules in the cavity. The second electrode includes metal oxide and zinc oxide.