Abstract: The invention discloses a sensitive field effect transistor apparatus, which uses an inorganic membrane to sense hydrogen ions. The invention adopts the membrane with high deformation stress. The sensitivity of the sensitive membrane to hydrogen ions is adjusted through altering the membrane thickness and changing the substrate type and doped concentration. A differential amplifier is used to read a signal to form the inorganic Ion Sensitive Field Effect Transistor/Reference Field Effect Transistor apparatus.

Abstract: The NH3 plasma treatment by remote plasma is firstly proposed to replace the covalent bonding process during surface modification procedure that for amine bond generation.

Abstract: A light-assisted biochemical sensor based on a light addressable potentiometric sensor is disclosed. The light-assisted biochemical sensor comprises a semiconductor substrate and a sensing layer, which are used to detect the specific ion concentration or the biological substance concentration of a detected solution. Lighting elements fabricated directly on the back surface of the semiconductor substrate directly illuminate the light to the semiconductor substrate, so as to enhance the photoconduction property of the semiconductor substrate. And then, the hysteresis and the sensing sensitivity of the light-assisted biochemical sensor are respectively reduced and improved. In addition, due to its characteristics of integration, the light-assisted biochemical sensor not only reduces the fabrication cost but also has portable properties and real-time detectable properties. As a result, its detection range and the application range are wider.

Abstract: A sensing device includes: a semiconductor layer of a field effect semiconductor having upper and lower surfaces; a conductive layer formed on the lower surface of the semiconductor layer; and a sensor layer of an insulator formed on the upper surface of the semiconductor layer. The insulator is made from lanthanide-titanium oxide.

Abstract: A method of patterning a metal alloy material layer having hafnium and molybdenum. The method includes forming a patterned mask layer on a metal alloy material layer having hafnium and molybdenum on a substrate. The patterned mask layer is used as a mask and an etching process is performed using an etchant on the metal alloy material layer having hafnium and molybdenum so as to form a metal alloy layer having hafnium and molybdenum. The etchant includes at least nitric acid, hydrofluoric acid and sulfuric acid. The patterned mask layer is removed.

Abstract: A semiconductor device including a metallic compound Hfx1Moy1Nz1 as an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.

Abstract: The invention discloses a sensitive field effect transistor apparatus, which uses the inorganic membrane to sense hydrogen ions. The invention adopts the membrane with high deformation stress. The sensitivity of sensitive membrane on hydrogen ion is adjusted through altering the membrane thickness and changing the substrate type and doped concentration. The differential amplifier is used to read signal to form the inorganic Ion Sensitive Field Effect Transistor/Reference Field Effect Transistor apparatus.

Abstract: An oxidized low density lipoprotein sensing device for a gallium nitride process is a GaN HEMT device including: a gateless AlGaN/GaN sensing transistor device, a testing window, a source, a drain, two metal connecting wires and a passivation layer. The gateless AlGaN/GaN sensing transistor device has an epitaxial wafer structure including a GaN layer and an aluminum gallium nitride layer. The testing window is disposed on the epitaxial wafer structure. The metal connecting wire is disposed on a source and a drain. The passivation layer is covered onto a surface of the sensing device except the testing window. A built-in piezoelectric field is created by the properties of FET and the polarization effect of AlGaN/GaN to achieve the effect of sensing the level of oxidizing proteins in human body quickly, accurately and easily.

Abstract: A method for manufacturing a substrate structure comprising a film and a substrate structure made by this method are disclosed. The method for manufacturing a substrate structure comprising a film includes the steps of: providing a target substrate; providing an initial substrate; forming an embrittlement-layer on the initial substrate; forming a device layer on the embrittlement-layer; doping with hydrogen ions; bonding the device layer with the target substrate; and separating the device layer from the initial substrate. The hydrogen ions are added into the embrittlement-layer through doping, before an energy treatment is applied to embrittle and break the embrittlement-layer, thereby separating the device layer from the initial substrate. Since the hydrogen ions are added into the embrittlement-layer through doping, a crystal lattice structure of the device layer will not be damaged during the step of doping with hydrogen ions.

Abstract: A transistor includes a gate structure of HfMoN. The work function of the gate structure can be modulated by doping the HfMoN with dopants including nitride, silicon or germanium. The gate structure of HfMoN of the present invention is applicable to PMOS, NMOS or CMOS transistors.

Abstract: A semiconductor device including a metallic compound Hfx1Moy1Nz1 as an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.

Abstract: An etchant for etching a metal alloy having hafnium and molybdenum includes 20 to 80 percent by weight of nitric acid, 1 to 49 percent by weight of hydrofluoric acid, 1 to 96 percent by weight of sulfuric acid, and 1 to 30 percent by weight of water, based on the total weight of the etchant.

Abstract: A method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device comprises providing a substrate. Under an atmosphere containing a fluoride nitride compound, a plasma treatment process is performed to simultaneously fluorinate and nitrify a surface of the substrate. Thereafter, a dielectric layer is formed on the substrate.

Abstract: A method for fabricating a semiconductor device with high-k materials. A high-k dielectric layer is formed on a substrate, followed by a fluorine-containing treatment of the high-k dielectric layer, forming an interface containing Si—F bonds.

Abstract: A read-only memory cell (ROM) and a fabrication method thereof. The cell comprises a substrate, a plurality of bit lines, a plurality of bit line oxides, a gate dielectric layer and a word line. The bit lines are formed near the surface of the substrate. The bit line oxides are disposed over the bit lines. The gate dielectric layer is disposed over the substrate between the bit lines and further comprises a silicon-rich oxide layer. The word line is disposed over the bit line oxides and the gate dielectric layer.

Abstract: A multi-bit vertical memory cell and method of fabricating the same. The multi-bit vertical memory cell comprises a semiconductor substrate with a trench, a plurality of bit lines formed therein near its surface and the bottom trench respectively, a plurality of bit line insulating layers over each bit line, a silicon rich oxide layer conformably formed on the sidewall of the trench and the surface of the surface of the bit line insulating layer, and a word line over the silicon rich oxide layer, and the trench is filled with the word line.

Abstract: A read-only memory cell (ROM) and a fabrication method thereof. The cell comprises a substrate, a plurality of bit lines, a plurality of bit line oxides, a gate dielectric layer and a word line. The bit lines are formed near the surface of the substrate. The bit line oxides are disposed over the bit lines. The gate dielectric layer is disposed over the substrate between the bit lines and further comprises a silicon-rich oxide layer. The word line is disposed over the bit line oxides and the gate dielectric layer.

Abstract: A biomedical ion sensitive sensor for sensing an ion concentration of a biomedicine sample includes an insulation layer formed on a substrate having a source region and a drain region. A gate oxide layer formed on the surface of the source region, the drain region, and the insulation layer. A chemical membrane layer is formed on the gate oxide layer. A concave ion sensitive portion is formed at an area of the surface of the chemical membrane layer defined between the source region and the drain region, and a rough surface is further formed on the ion sensitive portion. The ion sensitive film is made of Si3N4, SiO2, Al2O3, Ta2O5, SnO2, ZrO2, or HfO2. A plurality of biomedical ion sensitive semiconductor sensors are communicated with reactant micro-fluid channels to form a biomedical ion sensitive semiconductor sensor array.

Abstract: A method for forming bottle trenches. The method comprises providing a substrate formed with a pad stack layer on the top, and a deep trench with protective layer on the upper portions of sidewalls thereof, implanting ions into the lower portions of sidewalls and bottom of the trench not covered by the protective layer to amorphize the atomic structure of the sidewalls and bottom, oxidizing the amorphous sidewalls and bottom of the trench to form a bottle-shaped oxide layer thereon, and removing the bottle-shaped oxide layer.

Abstract: A method for forming a bottle-shaped trench. A semiconductor substrate having a pad stack layer thereon and a trench in a predetermined position is provided. A first dielectric layer is then formed on the lower sidewalls of the trench. Next, a second dielectric layer is formed to cover the upper sidewalls of the trench and the pad stack layer. Then, a protection layer is formed on the sidewalls portions of the second dielectric layer. The first dielectric layer is then removed to expose the lower portion of trench. Wet stripping is then carried out to increase the radius of the lower portion of the trench thereby forming a bottle-shaped trench.