Abstract: Embodiments described herein use closed-loop control (CLC) of conditioning sweep to enable uniform groove depth removal across the pad, throughout pad life. A sensor integrated into the conditioning arm enables the pad stack thickness to be monitored in-situ and in real time. Feedback from the thickness sensor is used to modify pad conditioner dwell times across the pad surface, correcting for drifts in the pad profile that may arise as the pad and disk age. Pad profile CLC enables uniform reduction in groove depth with continued conditioning, providing longer consumables lifetimes and reduced operating costs.

Abstract: A load cup apparatus for transferring a substrate in a processing system includes a pedestal assembly having a substrate support, an actuator, and a controller. The actuator is configured to move the pedestal assembly into a loading position in contact with a retaining ring of a carrier head and to generate a retaining ring thickness signal based on a distance travelled by the pedestal assembly. The controller is configured to receive the retaining ring thickness signal from the actuator.

Abstract: A method for controlling the residue clearing process of a chemical mechanical polishing (“CMP”) process is provided. Dynamic in-situ profile control (“ISPC”) is used to control polishing before residue clearing starts, and then a new polishing recipe is dynamically calculated for the clearing process. Several different methods are disclosed for calculating the clearing recipe. First, in certain implementations when feedback at T0 or T1 methods are used, a post polishing profile and feedback offsets are generated in ISPC software. Based on the polishing profile and feedback generated from ISPC before the start of the clearing process, a flat post profile after clearing is targeted. The estimated time for the clearing step may be based on the previously processed wafers (for example, a moving average of the previous endpoint times). The calculated pressures may be scaled to a lower (or higher) baseline pressure for a more uniform clearing.

Abstract: Apparatus and methods for conditioning a polishing pad in a CMP system are provided. In one embodiment, a method includes performing a pre-polish process including urging a conditioner disk against a polishing surface of a polishing pad disposed in a polishing station, moving the conditioner disk relative to the polishing pad in a sweep pattern across the polishing surface while monitoring a rotational force value required to move the conditioner disk relative to the polishing pad, determining a metric indicative of an interaction between the conditioner disk and the polishing surface from the rotational force value, adjusting a polishing recipe in response to the metric, and polishing one or more substrates using the adjusted polishing recipe.

Abstract: A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.

Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

Abstract: A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.

Abstract: A load cup apparatus for transferring a substrate in a processing system includes a pedestal assembly having a substrate support, an actuator, and a controller. The actuator is configured to move the pedestal assembly into a loading position in contact with a retaining ring of a carrier head and to generate a retaining ring thickness signal based on a distance travelled by the pedestal assembly. The controller is configured to receive the retaining ring thickness signal from the actuator.

Abstract: A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.

Abstract: A method and apparatus for conditioning a polishing pad in a CMP system is provided. In one embodiment, a method for conditioning a polishing pad includes applying a down force to the conditioning disk that urges the conditioning disk against the polishing pad, measuring a torque required to sweep the conditioning disk across the polishing pad, determining a change in down force by comparing the measured torque to a model force profile (MFP), and adjusting the down force that the conditioning disk applies against the polishing pad in response to the determined change.

Abstract: A method and apparatus for conditioning a polishing pad is provided. The conditioning element is held by a conditioning arm rotatably mounted to a base at a pivot point. An actuator pivots the arm about the pivot point. The conditioning element is urged against the surface of the polishing pad, and translated with respect to the polishing pad to remove material from the polishing pad and roughen its surface. The interaction of the abrasive conditioning surface with the polishing pad surface generates a frictional force. The frictional force may be monitored by monitoring the torque applied to the pivot point, and material removal controlled thereby. The conditioning time, down force, translation rate, or rotation of the conditioning pad may be adjusted based on the measured torque.

Abstract: A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.

Abstract: A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.

Abstract: Apparatus and methods for conditioning a polishing pad in a CMP system are provided. In one embodiment, a method includes performing a pre-polish process including urging a conditioner disk against a polishing surface of a polishing pad disposed in a polishing station, moving the conditioner disk relative to the polishing pad in a sweep pattern across the polishing surface while monitoring a rotational force value required to move the conditioner disk relative to the polishing pad, determining a metric indicative of an interaction between the conditioner disk and the polishing surface from the rotational force value, adjusting a polishing recipe in response to the metric, and polishing one or more substrates using the adjusted polishing recipe.

Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

Abstract: A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.

Abstract: Embodiments described herein use closed-loop control (CLC) of conditioning sweep to enable uniform groove depth removal across the pad, throughout pad life. A sensor integrated into the conditioning arm enables the pad stack thickness to be monitored in-situ and in real time. Feedback from the thickness sensor is used to modify pad conditioner dwell times across the pad surface, correcting for drifts in the pad profile that may arise as the pad and disk age. Pad profile CLC enables uniform reduction in groove depth with continued conditioning, providing longer consumables lifetimes and reduced operating costs.

Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.