Abstract: In a logic integrated DRAM LSI with SIMD architecture, a intentional clock skew is introduced for both between DRAM blocks and between logic blocks due to reduce the magnitude of peak current, operation frequency and number of I/O are defined for both DRAM blocks (frequency f.sub.M, I/O number m) and logic blocks (frequency f.sub.N, I/O number n) to keep the relation off.sub.M .times.m=f.sub.N .times.n,address out of order scheme is introduced to achieve a high-speed and low-power DRAM access.

Abstract: A logic circuit for a content-addressable-memory or parallel-processor array cell implements both prioritizing and counting functions for response resolution. It includes a means for receiving from a prior cell a response-resolution token and a means for receiving the positive or negative response of the current cell to a pattern to be matched. It also includes a means for deriving as a function of the prior cell's response-resolution token a response-resolution token for the current cell that implements prioritization and counting response-resolution functions for positive or negative pattern-matching responses of the current cell. Finally, it includes a means for selecting for the current cell the appropriate response-resolution token based on the cell's positive or negative pattern-matching response and a means for sending that response-resolution token to a subsequent cell.

Abstract: A content addressable memory cell comprises two storage IGFETs connected between a Match line and respective bitlines. Stored potentials are applied to the gates of the IGFETs through Write IGFETs which are cross coupled to the bitlines. The cross-coupling results in a larger storage capacitance and reduced degenerative capacitive coupling. This improves the speed and noise immunity of the cell. The memory cell is fabricated with three primary levels: a lower level of semiconductor material in which the source, drain and channel of each FET is formed, a center level of conductive material in which the Match and Write lines and the gates of the FETs are formed and an upper level in which the bitlines are formed. The center and lower levels are interconnected at buried contacts.

Abstract: A content addressable memory cell includes two storage field effect transistors of opposite conductivity type with their gates connected in common. A single write transistor is connected between the common gates and a bitline for storing a potential on the gates from the bitline.

Abstract: Each memory cell of an x-y addressable semiconductor memory includes a charge storage element serially connected with an I-O (bit) line through a pair of CCD-type transfer gates. One gate is responsive to x-addressing and the other gate to y-addressing.When an x-y address is selected only the charge storage element of the one selected memory cell communicates with the bit line.

Abstract: A one-transistor memory cell is provided in which the depletion-layer capacitance of an MOS capacitor is increased by locally enhancing the substrate dopant concentration. In preferred embodiments the substrate may also be doped adjacent to the substrate-insulator boundary with ions of appropriate conductivity type to form a diode junction in the substrate. The effective capacitance of the memory cell is therefore the capacitance of the insulator in parallel with the substantially increased depletion-layer or diode junction capacitance.