Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.

Abstract: A method is provided, including the following operations: simultaneously applying an organosilyl chloride inhibitor and a Lewis base to a surface of a substrate, the organosilyl chloride inhibitor being configured to adsorb onto dielectric regions of the surface of the substrate; performing a plurality of cycles of an ALD process to deposit a metal oxide onto the surface of the substrate; wherein the applying of the organosilyl chloride inhibitor and the Lewis base prevents the ALD process from depositing the metal oxide onto the dielectric regions of the surface of the substrate.

Abstract: A thermoelectric cooling apparatus for use with a motorcycle includes a housing having a bottom wall and a wall structure extending upwardly that defines an interior area and an open top providing selective access to the interior area. A conductive lining is situated adjacent to the insulation layer that includes an aluminum cooling plate upwardly displaced from the bottom wall such that the bottom wall, the wall structure and the cooling plate defining a hollow compartment. The cooling apparatus is mounted to a motorcycle with mounting straps and locked with a locking assembly. A thermoelectric assembly is situated in the compartment having a “cool” side coupled to a lower surface of the cooling plate of the lining and an opposed “hot” side, the thermoelectric assembly configured to electrically connect to the battery of the motorcycle such that the thermoelectric assembly conductively cools the cooling plate and the lining when actuated.

Abstract: The present invention discloses an adjuvant treatment of node-positive, early stage, hormone receptor-positive (HR+), human epidermal growth factor receptor 2-negative (HER2?) breast cancer comprising administering an effective amount of an endocrine therapy in combination with an effective amount of abemaciclib or a pharmaceutically acceptable salt thereof.

Abstract: A machine for forming a container from a blank of sheet material is provided. The blank includes a reinforcing panel assembly for forming a reinforcing corner assembly. The machine includes a hopper station for storing the blank in a substantially flat configuration and a forming station for forming the blank into the container. The forming station includes an initial forming station that rotates a first portion of the reinforcing panel assembly with respect to a second portion of the reinforcing panel assembly, and a secondary forming station having male and female forming members with shapes corresponding to an interior shape and an exterior shape of the reinforcing corner assembly, respectively. The male and the female forming members are configured to form the reinforcing corner assembly by compressing together the first and second portions of the reinforcing panel assembly.

Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.

Abstract: A method of improving selectivity of a metal in a selective deposition process. A pre-treatment process for the metal modifies the metal surface, and includes first reducing the metal to remove organic contamination from the metal followed by oxidation of the metal to allow a monolayer of a metal oxide to grow on the surface. This modification of the metal allows inhibitor molecules to adsorb on the metal oxide monolayer to improve selectivity.

Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.

Abstract: Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.

Abstract: Methods and apparatuses for selectively depositing silicon nitride on silicon surfaces relative to silicon oxide surfaces and selectively depositing silicon nitride on silicon oxide surfaces relative to silicon surfaces are provided herein. Methods involve blocking one surface while leaving another surface unblocked and selectively depositing silicon nitride on the unblocked surface. The blocked surface may include an organic moiety having an Si—C bond. The method may include blocking one of an exposed hydroxyl-terminated silicon-containing surface and an exposed hydrogen-terminated silicon-containing surface of the substrate. Apparatuses include a process chamber having a pedestal, an outlet, and a controller for providing instructions for causing delivery of a semiconductor substrate to the pedestal, causing introduction of a silicon-containing precursor and causing introduction of a nitrogen-containing reactant without igniting a plasma.

Abstract: Disclosed is a combination of a Fabry-Perot Tunable Filter (FPTF) wavelength selector, an internal reflection element (IRE) capable of measuring Attenuated Total Reflectance (ATR) spectra, and a pressure application element for applying pressure to samples, if needed. The resultant portable and compact device is called an FPTF-ATR spectrometer. The device measures data that can be used to identify chemical species in samples, predict properties of samples, and quantify amounts of chemical species in samples. Also disclosed are methods for using the FPTF-ATR for analyzing samples, especially analyzing compounds containing cannabis, hops, and other chemical species where portable chemical analysis is important.

Abstract: Disclosed herein are system, method, and computer program product embodiments for a media device upgrading system. An embodiment operates by receiving a command at a media device that includes an upgrader device connected via or plugged into an input port of the media device. It is determined that the command is associated with modifying a software component of the media device, wherein both the media device and the upgrader device include operating systems configured to process the command and modify the software component. The command is provided to the upgrader device based on a determination that the media device is in an upgrader mode of operation. A visual indication corresponding to the modification is provided.

Abstract: Embodiments of the present disclosure relate generally to methods and systems for bleaching textiles using ozone gas. Embodiments also incorporate a color removal step. In one example, there is provided a hybrid machine that incorporates certain features of a washer, but that also includes an integrated blower for gas distribution inside the machine. There is also provided an ozone dosing control system that allows for maintenance of a constant concentration of ozone in the machine. In one embodiment, the ozone output measured in grams/hour at this constant concentration in conjunction with the weight of product measured being treated may be referred to as the “bleaching factor.” There is further provided a drain sump design that helps minimize water volume in the presence of fabric lint, various added materials, and other processing chemicals.

Abstract: Disclosed is a combination of a Fabry-Perot Tunable Filter (FPTF) wavelength selector, an internal reflection element (IRE) capable of measuring Attenuated Total Reflectance (ATR) spectra, and a pressure application element for applying pressure to samples, if needed. The resultant portable and compact device is called an FPTF-ATR spectrometer. The device measures data that can be used to identify chemical species in samples, predict properties of samples, and quantify amounts of chemical species in samples. Also disclosed are methods for using the FPTF-ATR for analyzing samples, especially analyzing compounds containing cannabis, hops, and other chemical species where portable chemical analysis is important.

Abstract: Methods and systems are provided for radio frequency (RF) coils for magnetic resonance imaging (MRI) systems. In one embodiment, a system comprises: a radio frequency (RF) coil array for a magnetic resonance imaging (MRI) system, including: a flexible shell including an inner layer; and a plurality of flexible RF coils embedded within the inner layer, with each RF coil of the plurality of RF coils including two distributed capacitance wire conductors. In this way, the RF coil array may deform in order to conform to a body of a patient.

Abstract: Methods and apparatuses for selectively depositing silicon nitride on exposed surfaces of a substrate having hydroxyl end groups relative to exposed surfaces having S—H bonds are provided herein. Techniques involve providing a transition metal-containing reactant or a non-hydride aluminum-containing gas to the substrate to form a transition metal-containing or an aluminum-containing moiety on an exposed surface having hydroxyl end groups and selectively depositing silicon nitride on the surface using alternating pulses of an aminosilane and a hydrazine by thermal atomic layer deposition catalyzed by the transition metal-containing or aluminum-containing moiety on the exposed surface having hydroxyl end groups relative to an exposed surface having S—H bonds.

Abstract: Methods of and apparatuses for processing a metal oxide film are provided. Methods involve (a) exposing the metal oxide film to a boron halide reactant and igniting a first plasma with a first bias power to modify a surface of the metal oxide film, and (b) exposing the modified surface of the metal oxide film to a second plasma at a second bias power and for a duration sufficient to remove the modified surface without sputtering. Methods also involve (c) selectively depositing a metal oxide material on the metal oxide film to fill crevices within the metal oxide film.

Abstract: Methods and apparatuses for selectively depositing silicon oxide on a silicon oxide surface relative to a silicon nitride surface are described herein. Methods involve pre-treating a substrate surface using ammonia and/or nitrogen plasma and selectively depositing silicon oxide on a silicon oxide surface using alternating pulses of an aminosilane silicon precursor and an oxidizing agent in a thermal atomic layer deposition reaction without depositing silicon oxide on an exposed silicon nitride surface.

Abstract: It will be understood that in some embodiments, nitrogen-containing ligands bonded to the silicon may not necessarily be identical to another nitrogen-containing ligand bonded to the same silicon atom. For example, in some embodiments, R1 and R2 may be different alkyl ligands. In some embodiments, a first NR1R2 ligand attached to a silicon atom may not be the same as or have the same alkyl ligands as another NR1R2 ligand attached to the same silicon atom. As noted above, R1 and R2 may be any alkyl ligand.