Abstract: Embodiments relate generally to methods and systems for bleaching textiles using ozone gas that incorporates a color removal step. In one example, there is provided a hybrid machine that incorporates certain features of a washer, but that also includes an integrated blower for gas distribution inside the machine. There is also provided an ozone dosing control system that allows for maintenance of a constant concentration of ozone in the machine. In one embodiment, the ozone output measured in grams/hour at this constant concentration in conjunction with the weight of product measured being treated may be referred to as the “bleaching factor.” There is further provided a wastewater dye removal step, in which ozone is used to clean the water and remove dyes and other colors that may be deposited via denim or other garments.

Abstract: Embodiments of the present disclosure relate generally to systems and methods for combing ozone and water to deliver ozonated water in a rinse stream. The ozone rain pan finds particular use for rinsing food products traveling along a conveyor line with ozonated water.

Abstract: Provided are methods for the selective deposition of material on a sidewall surface of a patterned feature. In some embodiments, the methods involve providing a substrate having a feature recessed from a surface of the substrate. The feature has a bottom and a sidewall which extends from the bottom. A conformal film is deposited on the feature using an atomic layer deposition (ALD) process. The conformal film deposited on the bottom is modified by exposing the substrate to directional plasma such that the conformal film on the bottom is less dense than the conformal film on the sidewall. The modified conformal film deposited on the bottom of the feature is preferentially etched. Also provided are methods for the selective deposition on a horizontal surface of a patterned feature.

Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.

Abstract: Methods and apparatuses for selectively depositing silicon-containing dielectric or metal-containing dielectric material on silicon or metal surfaces selective to silicon oxide or silicon nitride materials are provided herein. Methods involve exposing the substrate to an acyl chloride which is reactive with the silicon oxide or silicon nitride material where deposition is not desired to form a ketone structure that blocks deposition on the silicon oxide or silicon nitride material. Exposure to the acyl chloride is performed prior to deposition of the desired silicon-containing dielectric material or metal-containing dielectric material.

Abstract: A wire unroller apparatus having a base configured to be removably mounted to a vehicle and at least one first spindle and a second spindle mounted to the base and configured to receive one or more spools of wire. The base has a base surface, left and right arms extending away from the base surface and terminating at ends, and a cross bar removably connected to the ends of the left and right arms. The first spindle is oriented in a first direction and is connected between the base surface and the cross bar. The second spindle is oriented in a second direction and is mounted between the left and right arms. The spools of wire on the first spindle and the second spindle may be unrolled at the same time.

Abstract: Methods, systems and apparatuses are disclosed for depositing a substantially transparent film coating onto a substantially transparent substrate via atmospheric pressure plasma deposition techniques and apparatuses.

Abstract: Methods and apparatuses for selectively depositing silicon oxide on a silicon oxide surface relative to a silicon nitride surface are described herein. Methods involve pre-treating a substrate surface using ammonia and/or nitrogen plasma and selectively depositing silicon oxide on a silicon oxide surface using alternating pulses of an aminosilane silicon precursor and an oxidizing agent in a thermal atomic layer deposition reaction without depositing silicon oxide on an exposed silicon nitride surface.

Abstract: Systems, methods, and devices for hazard detection are described. A hazard detection device may include a printed circuit board. The hazard detection device may further include a chassis that provides a housing for components of the hazard detection device; a smoke chamber that is mid-mounted; a carbon monoxide sensor that is mounted with the circuit board; and a speaker assembly that partially encircles the mid-mounted smoke chamber.

Abstract: Efficient integrated sequential deposition of alternating layers of dielectric and conductor, for example oxide/metal or metal nitride, e.g., SiO2/TiN, in a single tool, and even in a single process chamber enhances throughput without compromising quality when directly depositing a OMOM stack with many layers. Conductor and dielectric film deposition of a stack of at least 20 conductor/dielectric film pairs in the same processing tool or chamber, without breaking vacuum between the film depositions, such that there is no substantial cross-contamination between the conductor and dielectric film depositions, can be achieved.

Abstract: Embodiments of the present disclosure relate generally to systems and methods for combing ozone and water to deliver ozonated water in a rinse stream. The ozone rain pan finds particular use for rinsing food products traveling along a conveyor line with ozonated water.

Abstract: Methods are disclosed for delivering a substantially homogeneous and substantially transparent single film coating comprising siloxane-containing precursor materials onto a substantially transparent substrate surface on large components via atmospheric pressure plasma deposition techniques.

Abstract: Process and apparatus for forming a negative patterning mask in the context of EUV patterning uses a selective deposition process to deposit a metal oxide or metal nitride thin film in a feature defined in an EUV resist to prepare a negative image for patterning. The method to produce the “negative” image does not involve an etch back step and therefore accommodates the small resist budget. The material forming the “negative” image is significantly more etch resistant than resist which eliminates the need for an additional hard mask transfer layer.

Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.

Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.

Abstract: A blank of sheet material for forming a polygonal container is provided. The blank includes a bottom panel, two opposing side panels, two opposing end panels, and a reinforcing panel assembly extending from a first side edge of a first end panel of the two end panels. The reinforcing panel assembly includes a corner panel extending from the first side edge of the first end panel, a first reinforcing side panel extending from a side edge of the corner panel, a second reinforcing side panel extending from a side edge of the first reinforcing side panel, a reinforcing corner panel extending from a side edge of the second reinforcing side panel, and an inner end panel extending from a side edge of the reinforcing corner panel. The corner panel and the reinforcing corner panel are configured, upon articulation of the blank, to be positioned into face-to-face relationship to form a corner wall of the container extending from a side edge of an end wall of the container to an end edge of a side wall of the container.

Abstract: Methods and apparatuses for selectively depositing silicon nitride on silicon surfaces relative to silicon oxide surfaces and selectively depositing silicon nitride on silicon oxide surfaces relative to silicon surfaces are provided herein. Methods involve blocking one surface while leaving another surface unblocked and selectively depositing silicon nitride on the unblocked surface. The blocked surface may include an organic moiety having an Si—C bond. The method may include blocking one of an exposed hydroxyl-terminated silicon-containing surface and an exposed hydrogen-terminated silicon-containing surface of the substrate. Apparatuses include a process chamber having a pedestal, an outlet, and a controller for providing instructions for causing delivery of a semiconductor substrate to the pedestal, causing introduction of a silicon-containing precursor and causing introduction of a nitrogen-containing reactant without igniting a plasma.

Abstract: Multiposition collimation devices and x-ray imaging systems, which include the multiposition collimation devices, are provided. The multiposition collimation device includes a collimator housing and a collimator plate constructed to at least partially block the passage of x-rays. The collimator plate is movable relative to the collimator housing to a first position, corresponding to a first x-ray detector size, and a second position, corresponding to a second x-ray detector size.

Abstract: It will be understood that in some embodiments, nitrogen-containing ligands bonded to the silicon may not necessarily be identical to another nitrogen-containing ligand bonded to the same silicon atom. For example, in some embodiments, R1 and R2 may be different alkyl ligands. In some embodiments, a first NR1R2 ligand attached to a silicon atom may not be the same as or have the same alkyl ligands as another NR1R2 ligand attached to the same silicon atom. As noted above, R1 and R2 may be any alkyl ligand.

Abstract: Methods and apparatuses for selectively depositing silicon-containing dielectric or metal-containing dielectric material on silicon or metal surfaces selective to silicon oxide or silicon nitride materials are provided herein. Methods involve exposing the substrate to an acyl chloride which is reactive with the silicon oxide or silicon nitride material where deposition is not desired to form a ketone structure that blocks deposition on the silicon oxide or silicon nitride material. Exposure to the acyl chloride is performed prior to deposition of the desired silicon-containing dielectric material or metal-containing dielectric material.