Patents by Inventor Chen-Chih Fan

Chen-Chih Fan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050231213
    Abstract: A chip-type sensor against ESD and stress damages and contamination interference includes a substrate structure and a protection layer covering over the substrate structure. The protection layer includes, from bottom to top, a first layer for providing a first stress against the substrate structure, a second layer for providing a second stress against the substrate structure, and a third layer for providing a third stress against the substrate structure. The first stress and the third stress belong to one of a tensile stress and a compressive stress, and the second stress belongs to the other of the tensile stress and the compressive stress.
    Type: Application
    Filed: April 16, 2004
    Publication date: October 20, 2005
    Inventors: Bruce Chou, Wallace Cheng, Chen-Chih Fan
  • Patent number: 6900644
    Abstract: A capacitive fingerprint sensor against ESD damage and contamination interference includes a substrate, a plurality of plate electrodes, a metal mesh, a plurality of ESD units, a plurality of bonding pads, and a protection layer. The plate electrodes, bonding pads and metal mesh are positioned on the substrate at the same level, and are composed of the same material. The ESD units are connected to the metal mesh that is conducted to the ground, and are exposed via a plurality of first openings. Thus, electrostatic charges from a finger may be discharged through this path to the ground. The metal mesh is covered by the protection layer and is not exposed. The number of the ESD units is far less than that of the plate electrodes so as to reduce the contamination interference on the captured fingerprint image.
    Type: Grant
    Filed: May 6, 2003
    Date of Patent: May 31, 2005
    Assignee: Ligh Tuning Tech. Inc.
    Inventors: Bruce C. S. Chou, Wallace Y. W. Cheng, Chen-Chih Fan
  • Publication number: 20050110051
    Abstract: A surface processing method for a chip device includes the steps of: (a) providing a chip body having at least one exposed surface; (b) applying a polymeric monomer solution having a plurality of monomers to the at least one surface of the chip body, wherein each of the monomers has a soft fragment fluorocarbon (FC) polymer end and a polar silane group; and (c) curing the polymeric monomer solution to remove solvents out under proper environment settings, and to polymerize the monomers into a solid polymer layer on the at least one surface. The solid polymer layer thus has an exposed surface having a soft fragment FC polymer structure for protecting the chip body from encountering any external or internal interference.
    Type: Application
    Filed: November 17, 2004
    Publication date: May 26, 2005
    Inventors: Bruce Chou, Hsien-Ming Wu, Chen-Chih Fan
  • Publication number: 20040222802
    Abstract: A capacitive fingerprint sensor against ESD damage and contamination interference includes a substrate, a plurality of plate electrodes, a metal mesh, a plurality of ESD units, a plurality of bonding pads, and a protection layer. The plate electrodes, bonding pads and metal mesh are positioned on the substrate at the same level, and are composed of the same material. The ESD units are connected to the metal mesh that is conducted to the ground, and are exposed via a plurality of first openings. Thus, electrostatic charges from a finger may be discharged through this path to the ground. The metal mesh is covered by the protection layer and is not exposed. The number of the ESD units is far less than that of the plate electrodes so as to reduce the contamination interference on the captured fingerprint image.
    Type: Application
    Filed: May 6, 2003
    Publication date: November 11, 2004
    Inventors: Bruce C. S. Chou, Wallace Y.W. Cheng, Chen-Chih Fan
  • Publication number: 20040119376
    Abstract: A method for manufacturing a bidirectionally vertical motion actuator includes the steps of: providing a silicon-on-insulator (SOI) wafer, which comprises a first silicon wafer, an insulation layer on a top surface of the first silicon wafer, and a second silicon wafer; forming a dielectric layer on the SOI wafer by way of deposition; depositing a conductive layer on the dielectric layer; etching the conductive layer, the dielectric layer and the second silicon wafer simultaneously to form a proper top trench; and forming an anisotropic etching groove on a backside of the SOI wafer. A bidirectionally vertical motion actuator formed using the method is also disclosed.
    Type: Application
    Filed: September 8, 2003
    Publication date: June 24, 2004
    Inventors: Bruce C. S. Chou, Chen-Chih Fan, Wei-Ting Lin, Ming-Lin Tsai, Wei-Leun Fang, Chingfu Tsou