Abstract: An antenna module includes first and second antennas. The first antenna includes first, second and third radiators. A first end of the first antenna is a first feed-in end. The second and third radiators are connected to a second end of the first radiator. The second radiator has a first ground. The second antenna includes fourth, fifth and sixth radiators. The fifth radiator is connected to a second feed-in end of the fourth radiator. A second ground is located at an intersection between the fifth and sixth radiators. The antenna module covers first, second and third frequency bands.

Abstract: A fixing mechanism, applied to an electronic device to fix an electronic module. The fixing mechanism comprises a casing, a fixing structure and a locking structure. The casing includes a baseplate and a side plate to define a space to accommodate the electronic module, and the side plate has a hole and a seat. The fixing structure includes a fixing element and a pressing portion. The fixing element movably extends from the outer side of the side plate into the space through the hole. The pressing portion is rotatably disposed on the combining seat, and includes a first part having an opening and a second part corresponding to the fixing element. The locking structure is movably set in the opening, and includes an engaging element. When the engaging element is engaged in the opening, the locking structure presses against the side plate to fix the pressing portion.

Abstract: A fan impeller includes a hub, a plurality of annular blades, and a plurality of spacers. The annular blades are stacked along an axial direction of the hub and disposed around the outer periphery of the hub. The extension directions of the annular blades are perpendicular to the axial direction of the hub. Each of the spacers is disposed between the two adjacent annular blades. Each of the annular blades has an inner periphery. A gap is provided between the inner periphery and the hub. Each of the annular blades further includes a plurality of spokes and an inner ring, the inner ring is disposed on and connected to the outer periphery of the hub, and two ends of the spoke are connected to the inner periphery and the inner ring of the annular blade. The spacers are separately disposed on the inner rings of the annular blades, respectively.

Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile, by the thermal hydrogen treatment.

Abstract: A surgical system includes: (1) an imaging device configured to acquire imaging data of a surgical site; (2) a surgical manipulator configured to hold a surgical tool; and (3) a controller connected to the imaging device and the surgical manipulator, wherein the controller is configured to receive the imaging data from the imaging device and derive, from the imaging data, an insertion trajectory for the surgical tool through an incision at the surgical site.

Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile, by the thermal hydrogen treatment.

Abstract: A fan impeller includes a hub, a plurality of annular blades, and a plurality of spacers. The annular blades are stacked along an axial direction of the hub and disposed around the outer periphery of the hub. The extension directions of the annular blades are perpendicular to the axial direction of the hub. Each of the spacers is disposed between the two adjacent annular blades. Each of the annular blades has an inner periphery. A gap is provided between the inner periphery and the hub. Each of the annular blades further includes a plurality of spokes and an inner ring, the inner ring is disposed on and connected to the outer periphery of the hub, and two ends of the spoke are connected to the inner periphery and the inner ring of the annular blade. The spacers are separately disposed on the inner rings of the annular blades, respectively.

Abstract: A fan includes a frame, an impeller, and a motor. The impeller is disposed in the frame and includes a hub, a plurality of annular blades, and a plurality of spacers. The annular blades are stacked along an axial direction of the hub and disposed around the outer periphery of the hub. The extension directions of the annular blades are perpendicular to the axial direction of the hub. Each of the spacers is disposed between the two adjacent annular blades. The motor is disposed in the frame and drives the impeller to rotate to induce an airflow. The thickness of each annular blade is smaller than or equals to 0.2 mm.

Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile, by the thermal hydrogen treatment.

Abstract: A system for imparting motion of an object includes: (1) at least one first hydrostatic actuator; (2) a hydraulic transmission conduit; and (3) at least one second hydrostatic actuator. The first hydrostatic actuator is connected to the second hydrostatic actuator via the hydraulic transmission conduit, such that an input displacement applied to the first hydrostatic actuator is transmitted via the hydraulic transmission conduit to the second hydrostatic actuator to impart motion of the object.

Abstract: A thin cooling fan includes a fan shell, a motor, a plurality of blades, and a PCB. The fan shell comprises a base plate and a shell cover which cover to each other to form an inner space. The base plate has a first surface facing toward the inner space and a second surface having a receiving space and opposite to the first surface. The motor is combined in the inner space. The blades are disposed in the inner space and rotated by the motor. The PCB is disposed in the receiving space and flush with the second surface. Thus, the whole thickness of the cooling fan is reduced and the flow channel design in the inner space is not affected.

Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile, by the thermal hydrogen treatment.

Abstract: A robotic surgery system includes: (1) a positioning stage and (2) at least one manipulator arm mounted to the positioning stage, wherein the manipulator arm includes a track and a tool carriage moveably mounted to the track, and the tool carriage includes a base and a pair of light emitting devices mounted to the base.

Abstract: A wire connection terminal structure includes a terminal main body and a stopper member. One end of the terminal main body is formed with a connection section. Two support legs extend from the connection section for securely connecting with a preset circuit board. The connection section defines a socket. An elastic abutment plate obliquely extends from the connection section between the two support legs. A locating section is disposed at one end of each support leg. The stopper member is securely connected to the support legs via the locating sections. A stop face is formed on one side of one end of the stopper member proximal to the connection section and positioned in the moving path of the elastic abutment plate when elastically deformed. After the elastic abutment plate is forced, the deformation amount of the elastic abutment plate is restricted by the stop face.

Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile, by the thermal hydrogen treatment.

Abstract: A fan includes a frame, an impeller, and a motor. The impeller is disposed in the frame and includes a hub, a plurality of annular blades, and a plurality of spacers. The annular blades are stacked along an axial direction of the hub and disposed around the outer periphery of the hub. The extension directions of the annular blades are perpendicular to the axial direction of the hub. Each of the spacers is disposed between the two adjacent annular blades. The motor is disposed in the frame and drives the impeller to rotate to induce an airflow. The thickness of each annular blade is smaller than or equals to 0.2 mm.

Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile by the thermal hydrogen treatment.

Abstract: In accordance with an embodiment, a method includes driving at least one electronic switch coupled to at least one inductor in a converter stage of a switched mode power supply based on a clock signal, and modulating a clock frequency of the clock signal over a predefined first frequency range around a center frequency such that a frequency spectrum of the clock signal is asymmetric. The switched mode power supply includes a filter coupled between the converter stage and an input of the switched mode power supply.

Abstract: A wire connection terminal structure includes a terminal main body and a stopper member. One end of the terminal main body is formed with a connection section. Two support legs extend from the connection section for securely connecting with a preset circuit board. The connection section defines a socket. An elastic abutment plate obliquely extends from the connection section between the two support legs. A locating section is disposed at one end of each support leg. The stopper member is securely connected to the support legs via the locating sections. A stop face is formed on one side of one end of the stopper member proximal to the connection section and positioned in the moving path of the elastic abutment plate when elastically deformed. After the elastic abutment plate is forced, the deformation amount of the elastic abutment plate is restricted by the stop face.

Abstract: In accordance with an embodiment, a method includes driving at least one electronic switch coupled to at least one inductor in a converter stage of a switched mode power supply based on a clock signal, and modulating a clock frequency of the clock signal over a predefined first frequency range around a center frequency such that a frequency spectrum of the clock signal is asymmetric. The switched mode power supply includes a filter coupled between the converter stage and an input of the switched mode power supply.