Abstract: The present invention provides methods and kits for detecting human cytomegalovirus. The present invention also provides oligonucleotides for detecting human cytomegalovirus.

Abstract: A method for fabricating a light emitting diode (LED) is provided. A first-type doped semiconductor layer, a light emitting layer and a second-type doped semiconductor layer are formed on an epitaxy substrate sequentially. Then, a gold layer is formed on the second-type doped semiconductor layer. Next, a bonding substrate is provided. The bonding substrate includes a silicon substrate and a germanium-contained layer disposed on the silicon substrate. Then, a bonding process is performed on the bonding substrate and the gold layer. Next, the epitaxy substrate is removed. Accordingly, a LED with better reliability and light-emitting efficiency can be made. Moreover, a LED is also provided.

Abstract: The present invention provides a method to fabricate a diode whose heat stability is improved. The diode has a layer of high reflective ohmic contact and an alloy metal is used in the layer. With the alloy metal used in the layer, the heat stability of the diode is improved.

Abstract: A method for aligning gesture features of image is disclosed. An input gesture image is captured, and then a closed curve formed by a binary contour image of the gesture image is determined by processing the gesture image. A curvature scale space (CSS) image of the gesture image is drawn based on the closed curve. A convolution operation is performed with respect to the sequence of a coordinate-peak set formed by the CSS image and a predefined function to designate the coordinate with maximal value of integration as a basis point for obtaining a feature parameter of the gesture image. Finally, comparing the feature parameter of the gesture image with each feature parameter of a plurality of reference gesture shapes, thereby determining a gesture shape corresponding to the gesture image.

Abstract: A LED structure including an epitaxy substrate, a semiconductor layer, a first bonding pad and a second bonding pad, is provided. The epitaxy substrate has a through hole and the semiconductor layer is disposed on the epitaxy substrate. The semiconductor layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer. The first type doped semiconductor layer is disposed on the epitaxy substrate, while the light-emitting layer is disposed between the first type and second type doped semiconductor layers. The first bonding pad is disposed in the through hole and electrically connected to the first type doped semiconductor layer, while the second bonding pad is disposed on the second type doped semiconductor layer.

Abstract: A method for fabricating a light emitting diode (LED) is provided. Successively forming a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer on an epitaxy substrate; forming a bonding layer thereon; bonding a transferring substrate with the bonding layer; removing the epitaxy substrate; removing a part of the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer for exposing a part of the bonding layer; patterning the bonding layer to form a first and a second bonding portion isolated from each other, wherein the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer are disposed on the first bonding portion; forming a pad on the first type doped semiconductor layer; and forming a conducting wire for electrically connecting the pad and the second bonding portion.

Abstract: A method for fabricating a light emitting diode (LED) is provided. First, a first type doped semiconductor layer, an emitting layer and a second type doped semiconductor layer are sequentially formed on an epitaxy substrate. Then, a gold layer is formed on the second type doped semiconductor layer. Next, a silicon substrate is provided, and a wafer bonding process is performed between the silicon substrate and the gold layer. Finally, the epitaxy substrate is removed. As mentioned above, a LED with better reliability and efficiency of light-emitting is fabricated according to the method provided by the present invention. Moreover, the present invention further provides a LED.

Abstract: A solder composition for reacting with aluminum is provided. The main alloying components in the solder includes tin (Sn), zinc (Zn) and chromium (Cr) with 0.01 wt % to 20 wt % zinc and 0.01 wt % to 20 wt % chromium.

Abstract: A method for fabricating a light emitting diode (LED) is provided. First, a first type doped semiconductor layer, an emitting layer and a second type doped semiconductor layer are sequentially formed on an epitaxy substrate. Then, a first transparent conductive layer is formed on the second type doped semiconductor layer. Next, a substitution substrate having a second transparent conductive layer formed thereon is provided. Then, a wafer bonding process is performed on the epitaxy substrate and the substitution substrate, so as to bond the first transparent conductive layer and the second transparent conductive layer. Finally, the epitaxy substrate is removed. As mentioned above, an LED with better reliability is fabricated according to the method provided by the present invention. Moreover, the present invention further provides an LED.

Abstract: A method for fabricating a light emitting diode (LED) is provided. A first-type doped semiconductor layer, a light emitting layer and a second-type doped semiconductor layer are formed on an epitaxy substrate sequentially. Then, a gold layer is formed on the second-type doped semiconductor layer. Next, a bonding substrate is provided. The bonding substrate includes a silicon substrate and a germanium-contained layer disposed on the silicon substrate. Then, a bonding process is performed on the bonding substrate and the gold layer. Next, the epitaxy substrate is removed. Accordingly, a LED with better reliability and light-emitting efficiency can be made. Moreover, a LED is also provided.

Abstract: A method for fabricating a light emitting diode (LED) is provided. First, a first type doped semiconductor layer, an emitting layer and a second type doped semiconductor layer are sequentially formed on an epitaxy substrate. Then, a gold layer is formed on the second type doped semiconductor layer. Next, a silicon substrate is provided, and a wafer bonding process is performed between the silicon substrate and the gold layer. Finally, the epitaxy substrate is removed. As mentioned above, a LED with better reliability and efficiency of light-emitting is fabricated according to the method provided by the present invention. Moreover, the present invention further provides a LED.

Abstract: A method for fabricating a light emitting diode (LED) is provided. Successively forming a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer on an epitaxy substrate; forming a bonding layer thereon; bonding a transferring substrate with the bonding layer; removing the epitaxy substrate; removing a part of the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer for exposing a part of the bonding layer; patterning the bonding layer to form a first and a second bonding portion isolated from each other, wherein the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer are disposed on the first bonding portion; forming a pad on the first type doped semiconductor layer; and forming a conducting wire for electrically connecting the pad and the second bonding portion.

Abstract: A LED structure including an epitaxy substrate, a semiconductor layer, a first bonding pad and a second bonding pad, is provided. The epitaxy substrate has a through hole and the semiconductor layer is disposed on the epitaxy substrate. The semiconductor layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer. The first type doped semiconductor layer is disposed on the epitaxy substrate, while the light-emitting layer is disposed between the first type and second type doped semiconductor layers. The first bonding pad is disposed in the through hole and electrically connected to the first type doped semiconductor layer, while the second bonding pad is disposed on the second type doped semiconductor layer.

Abstract: A background removal apparatus comprises a color normalization module that normalizes an original image, and an image segmentation module that segments the normalized image into several segmented regions. A background mesh generation module simulates the variation of pixel colors in background and generates an interpolated background mesh. A comparison module compares the normalized image and the interpolated background mesh to form a background mask by extracting the coherent regions between them. A refinement module uses a refined rule to determine a final background mask, and a background removal module through which a pure foreground image is obtained. The apparatus combines the efficiency of both color and spatial clustering, and improves the capabilities of current image segmentation method to perform background removal.

Abstract: A flip-chip gold bump structure and a method of fabricating thereof are disclosed. The structure includes a nickel layer formed on a gold bump formed on a chip, and a copper layer formed on the nickel layer for forming a Ni/Cu barrier layer. Because of the formation of the Ni/Cu layer which prevents the interaction of the gold bump and the solder, the fragile connecting point resulting from the rapid interaction of the Au—Sn can be eliminated.

Abstract: A method and apparatus provide an integrated circuit package with improved heat dissipation and easier fabrication. The integrated circuit package includes a thinned semiconductor die attached to a heat spreader using a thermally conductive material. The thinned die reduces the thermal resistance of the die/heat spreader combination to improve heat extraction from the die as well as eliminating processing steps in fabrication. Additionally, the thinned die becomes more compliant as it takes on the thermal/mechanical properties of the heat spreader to reduce stress-induced cracking of the die.

Abstract: A method for aligning gesture features of image is disclosed. An input gesture image is captured, and then a closed curve formed by a binary contour image of the gesture image is determined by processing the gesture image. A curvature scale space (CSS) image of the gesture image is drawn based on the closed curve. A convolution operation is performed with respect to the sequence of a coordinate-peak set formed by the CSS image and a predefined function to designate the coordinate with maximal value of integration as a basis point for obtaining a feature parameter of the gesture image. Finally, comparing the feature parameter of the gesture image with each feature parameter of a plurality of reference gesture shapes, thereby determining a gesture shape corresponding to the gesture image.

Abstract: A solder composition adapted to bond metallic materials and non-metallic materials is provided. The solder composition can enhance the bonding strength for the metallic materials and the non-metallic materials. The solder composition mainly comprises Sn—Cr alloy. The solder composition further includes anther metal component for regulating the bonding capability so that the solder composition can be used to bond various materials.

Abstract: A method and apparatus provide an integrated circuit package with improved heat dissipation and easier fabrication. The integrated circuit package includes a thinned semiconductor die attached to a heat spreader using a thermally conductive material. The thinned die reduces the thermal resistance of the die/heat spreader combination to improve heat extraction from the die as well as eliminating processing steps in fabrication. Additionally, the thinned die becomes more compliant as it takes on the thermal/mechanical properties of the heat spreader to reduce stress-induced cracking of the die.

Abstract: A flip-chip gold bump structure and a method of fabricating thereof are disclosed. The structure includes a nickel layer formed on a gold bump formed on a chip, and a copper layer formed on the nickel layer for forming a Ni/Cu barrier layer. Because of the formation of the Ni/Cu layer which prevents the interaction of the gold bump and the solder, the fragile connecting point resulting from the rapid interaction of the Au—Sn can be eliminated.