Patents by Inventor Chi-I Lang
Chi-I Lang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20180358229Abstract: A method of fabricating a semiconductor structure is described. The method comprises forming at least one mandrel on a substrate, the at least one mandrel comprising a diamond-like carbon and having a top and two opposing sidewalls, the diamond-like carbon comprising at least 40% sp3 hybridized carbon atoms. The mandrel may be used in Self-Aligned Multiple Patterning (SAMP) processes.Type: ApplicationFiled: June 7, 2018Publication date: December 13, 2018Applicant: Applied Materials, Inc.Inventors: Takehito Koshizawa, Eswaranand Venkatasubramanian, Pramit Manna, Chi Lu, Chi-I Lang, Nancy Fung, Abhijit Basu Mallick
-
Publication number: 20180337047Abstract: A method of etching a hardmask layer formed on a substrate is provided. The method includes supplying an etching gas mixture to a processing region of a processing chamber. A device substrate is disposed in the processing region when the etching gas mixture is supplied to the processing region. The device substrate comprises a substrate and a hardmask layer formed over the substrate. The etching gas mixture comprises a fluorine-containing gas, a silicon-containing gas, and an oxygen-containing gas. The method further includes providing RF power to the etching gas mixture to form a plasma in the processing region. The plasma is configured to etch exposed portions of the hardmask layer.Type: ApplicationFiled: May 18, 2018Publication date: November 22, 2018Inventors: Nancy FUNG, Gene LEE, Hailong ZHOU, Zohreh HESABI, Akhil MEHROTRA, Shan JIANG, Abhijit PATIL, Chi-I LANG, Larry GAO
-
Patent number: 9245744Abstract: According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.Type: GrantFiled: April 15, 2014Date of Patent: January 26, 2016Assignee: Intermolecular, Inc.Inventors: Sunil Shanker, Tony P. Chiang, Chi-I Lang
-
Patent number: 9245848Abstract: Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.Type: GrantFiled: September 17, 2014Date of Patent: January 26, 2016Assignee: Intermolecular, Inc.Inventors: Anh Duong, Tony Chiang, Zachary M. Fresco, Nitin Kumar, Chi-I Lang, Jinhong Tong, Anna Tsizelmon
-
Patent number: 9245793Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.Type: GrantFiled: December 19, 2013Date of Patent: January 26, 2016Assignee: Intermolecular, Inc.Inventors: Ratsamee Limdulpaiboon, Frank Greer, Chi-I Lang, J. Watanabe, Wenxian Zhu
-
Patent number: 9224644Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The remote plasma source may be used to provide a plasma surface treatment or as a source to incorporate dopants into a pre-deposited layer.Type: GrantFiled: December 26, 2012Date of Patent: December 29, 2015Assignee: Intermolecular, Inc.Inventors: Sandip Niyogi, Amol Joshi, Chi-I Lang, Salil Mujumdar
-
Patent number: 9176181Abstract: Measuring current-voltage (I-V) characteristics of a solar cell using a lamp that emits light, a substrate that includes a plurality of solar cells, a positive electrode attached to the solar cells, and a negative electrode peripherally deposited around each of the solar cells and connected to a common ground, an articulation platform coupled to the substrate, a multi-probe switching matrix or a Z-stage device, a programmable switch box coupled to the multi-probe switching matrix or Z-stage device and selectively articulating the probes by raising the probes until in contact with at least one of the positive electrode and the negative electrode and lowering the probes until contact is lost with at least one of the positive electrode and the negative electrode, a source meter coupled to the programmable switch box and measuring the I-V characteristics of the substrate.Type: GrantFiled: August 20, 2013Date of Patent: November 3, 2015Assignee: Intermolecular, Inc.Inventors: Yun Wang, Tony P. Chiang, Chi-I Lang
-
Patent number: 9175382Abstract: In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.Type: GrantFiled: October 25, 2011Date of Patent: November 3, 2015Assignee: Intermolecular, Inc.Inventors: Hong Sheng Yang, Tony P. Chiang, Kent Riley Child, Chi-I Lang, ShouQian Shao
-
Patent number: 9178145Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.Type: GrantFiled: April 29, 2014Date of Patent: November 3, 2015Assignee: Intermolecular, Inc.Inventors: Nitin Kumar, Tony P. Chiang, Chi-I Lang, Zhi-Wen Wen Sun, Jinhong Tong
-
Patent number: 9147841Abstract: A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.Type: GrantFiled: February 4, 2015Date of Patent: September 29, 2015Assignee: Intermolecular, Inc.Inventors: Tony P. Chiang, Chi-I Lang, Prashant B. Phatak
-
Patent number: 9105563Abstract: A method and system includes a first substrate and a second substrate, each substrate comprising a predetermined baseline transmittance value at a predetermine wavelength of light, processing regions on the first substrate by combinatorially varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production, performing a first characterization test on the processed regions on the first substrate to generate first results, processing regions on a second substrate in a combinatorial manner by varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production based on the first results of the first characterization test, performing a second characterization test on the processed regions on the second substrate to generate second results, and determining whether at least one of the first substrate and the second substrate meet a predetermined quality threshold based on the second resType: GrantFiled: December 13, 2012Date of Patent: August 11, 2015Assignee: Intermolecular, Inc.Inventors: Charlene Chen, Tony P. Chiang, Chi-I Lang, Yun Wang
-
Patent number: 9103871Abstract: Simultaneous measurement of an internal quantum efficiency and an external quantum efficiency of a solar cell using an emitter that emits light; a three-way beam splitter that splits the light into solar cell light and reference light, wherein the solar cell light strikes the solar cell; a reference detector that detects the reference light; a reflectance detector that detects reflectance light, wherein the reflectance light comprises a portion of the solar cell light reflected off the solar cell; a source meter operatively coupled to the solar cell; a multiplexer operatively coupled to the solar cell, the reference detector, and the reflectance detector; and a computing device that simultaneously computes the internal quantum efficiency and the external quantum efficiency of the solar cell.Type: GrantFiled: November 12, 2013Date of Patent: August 11, 2015Assignee: Intermolecular, Inc.Inventors: Yun Wang, Tony P. Chiang, Chi-I Lang
-
Publication number: 20150184298Abstract: Apparatus and methods for depositing materials on a plurality of site-isolated regions on a substrate are provided. The deposition uses PECVD or PEALD. The apparatus include an inner chamber with an aperture and barrier that can be used to isolate the regions during the deposition and prevent the remaining portions of the substrate from being exposed to the deposition process. The process parameters for the deposition process are varied among the site-isolate regions in a combinatorial manner.Type: ApplicationFiled: March 17, 2015Publication date: July 2, 2015Inventors: ShouQian Shao, Chi-I Lang, Jingang Su
-
Publication number: 20150179509Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.Type: ApplicationFiled: December 19, 2013Publication date: June 25, 2015Applicant: Intermolecular, Inc.Inventors: Ratsamee Limdulpaiboon, Frank Greer, Chi-I Lang, J. Watanabe, Wenxian Zhu
-
Publication number: 20150147866Abstract: A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.Type: ApplicationFiled: February 4, 2015Publication date: May 28, 2015Inventors: Tony P. Chiang, Chi-I Lang, Prashant B. Phatak
-
Patent number: 9023438Abstract: Apparatus and methods for depositing materials on a plurality of site-isolated regions on a substrate are provided. The deposition uses PECVD or PEALD. The apparatus include an inner chamber with an aperture and barrier that can be used to isolate the regions during the deposition and prevent the remaining portions of the substrate from being exposed to the deposition process. The process parameters for the deposition process are varied among the site-isolate regions in a combinatorial manner.Type: GrantFiled: December 17, 2012Date of Patent: May 5, 2015Assignee: Intermolecular, Inc.Inventors: ShouQian Shao, Chi-I Lang, Jingang Su
-
Patent number: 8987143Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.Type: GrantFiled: September 19, 2013Date of Patent: March 24, 2015Assignee: Intermolecular, Inc.Inventors: Ratsamee Limdulpaiboon, Chi-I Lang, Sandip Niyogi, J. Watanabe
-
Patent number: 8980709Abstract: A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.Type: GrantFiled: September 16, 2013Date of Patent: March 17, 2015Assignee: Intermolecular, Inc.Inventors: Tony P. Chiang, Chi-I Lang, Prashant B. Phatak
-
Publication number: 20150001555Abstract: Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.Type: ApplicationFiled: September 17, 2014Publication date: January 1, 2015Inventors: Anh Duong, Tony Chiang, Zachary M. Fresco, Nitin Kumar, Chi-I Lang, Jinhong Tong, Anna Tsizelmon
-
Patent number: 8920618Abstract: Apparatuses and methods for high-deposition-rate sputtering for depositing layers onto a substrate are disclosed. The apparatuses generally comprise a process chamber; one or more sputtering sources disposed within the process chamber, wherein each sputtering source comprises a sputtering target; a substrate support disposed within the process chamber; a shield positioned between the sputtering sources and the substrate, the shield comprising an aperture positioned under each sputtering source; and a transport system connected to the substrate support capable of positioning the substrate such that one of a plurality of site-isolated regions on the substrate can be exposed to sputtered material through the aperture positioned under each of the sputtering sources; wherein the spacing between the sputtering target and the substrate is less than 100 mm. The apparatus enables high deposition rate sputtering onto site-isolated regions on the substrate.Type: GrantFiled: December 29, 2011Date of Patent: December 30, 2014Assignee: Intermolecular, Inc.Inventors: Hong Sheng Yang, Zhendong Hong, Chi-I Lang