Abstract: A host system initiates an abort of a command that has been placed into a submission queue (SQ) of the host system. The host system identifies at least one of a first outcome and a second outcome. When the first outcome indicates that the command is not completed and the second outcome indicates that the SQ entry has been fetched from the SQ, the host system sends an abort request to a storage device, and issues a cleanup request to direct the host controller to reclaim host hardware resources allocated to the command. The host system adds a completion queue (CQ) entry to a CQ and sets an overall command status (OCS) value of the CQ entry based on at least one of the first outcome and the second outcome.

Abstract: A method of forming low-k material is provided. The method includes providing a plurality of core-shell particles. The core of the core-shell particles has a first ceramic with a low melting point. The shell of the core-shell particles has a second ceramic with a low melting point and a low dielectric constant. The core-shell particles are sintered and molded to form a low-k material. The shell of the core-shell particles is connected to form a network structure of a microcrystal phase.

Abstract: Systems and methods are described for generating record clusters. The methods comprise receiving a plurality of records from data sources and providing at least a subset of the records to a scoring model that determines scores for various pairings of the records, a score for a given pair of the records representing a probability that the given pair of records contain data elements about the same entity. The method further comprises generating a graph data structure that includes a plurality of nodes, individual nodes representing a different record from the records. The method also comprises assigning a different unique identifier to individual clusters of the final clusters and responding to a request for data regarding a given entity by providing aggregated data elements from those records of the records associated with a cluster of the final clusters having an identifier that represents the given entity.

Abstract: A semiconductor structure includes a semiconductor substrate, first to third isolation structures, and a conductive feature. The first to third isolation structures are over the semiconductor substrate and spaced apart from each other. The semiconductor substrate comprises a region surrounded by a sidewall of the first isolation structure and a first sidewall of the second isolation structure. The conductive feature extends vertically in the semiconductor substrate and between the between the second and third isolation structures, wherein the conductive feature has a rounded corner adjoining a second sidewall of the second isolation structure opposite the first sidewall of the second isolation structure.

Abstract: A method for forming a protective film on an electronic module includes: placing the electronic module and a protective material placed on the electronic module in a chamber; performing a first heating procedure on the protective material in the chamber, and performing a first pressure boosting procedure, wherein a pressure in the first pressure boosting procedure is greater than 1 atmosphere; after softening the protective material, maintaining the first heating procedure, and performing an oscillating decompression procedure on the chamber, wherein the oscillating decompression procedure includes alternately changing pressures in the chamber between multiple low pressures less than 1 atmosphere; maintaining the first heating procedure, and performing a second pressure boosting procedure on the chamber, wherein a pressure in the second boosting procedure is less than that of the first boosting procedure and greater than 1 atmosphere; and performing a second heating procedure on the protective material in the

Abstract: A semiconductor structure includes a substrate with a first surface and a second surface opposite to the first surface, a first and a second shallow trench isolations disposed in the substrate and on the second surface, a deep trench isolation structure in the substrate and coupled to the first shallow trench isolation, a first dielectric layer disposed on the first surface and coupled to the deep trench isolation structure, a second dielectric layer disposed over the first dielectric layer and coupled to the deep trench isolation structure, a third dielectric layer comprising a horizontal portion disposed over the second dielectric layer and a vertical portion coupled to the horizontal portion, and a through substrate via structure penetrating the substrate from the first surface to the second surface and penetrating the second shallow trench isolation.

Abstract: The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes two pixel arrays each having multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by a time ratio of the line time difference and the frame period. The TDI sensor doubles a number of times of integrating pixel data corresponding to the same position of a scene by arranging two separately operated pixel arrays.

Abstract: A well cementing method is described for improving cementing quality by controlling the hydration heat of cement slurry. By controlling the degree and/or rate of hydration heat release from cement slurry, the method improves the hydration heat release during formation of cement with curing of cement slurry, improves the binding quality between the cement and the interfaces, and in turn improves the cementing quality at the open hole section and/or the overlap section. The cementing method improves cementing quality of oil and gas wells and reduces the risk of annular pressure.

Abstract: An optical detection device includes a first linear light source, a second linear light source, an optical sensor array and a processor. The first linear light source is adapted to project a first long strip illumination beam onto the target container. The second linear light source is adapted to project a second long strip illumination beam onto the target container, and the second long strip illumination beam is crossed with the first long strip illumination beam. The optical sensor array is adapted to receive a first long strip detection beam and a second long strip detection beam reflected from the target container. The processor is electrically connected to the optical sensor array. The processor is adapted to analyze intensity distribution of the first long strip detection beam and the second long strip detection beam to acquire a relative distance between the optical sensor array and the target container.

Abstract: An electronic device includes a chip and a circuit structure layer overlapped with the chip. The circuit structure layer includes a redistribution structure layer and an element structure layer, and the redistribution structure layer and the element structure layer are electrically connected to the chip. At least one of the redistribution structure layer and the element structure layer includes at least one opening, and in a normal direction of the electronic device, the at least one opening is overlapped with aside of the chip.

Abstract: This invention provides herbal compositions useful for increasing the therapeutic index of chemotherapeutic compounds. This invention also provides methods useful for improving the quality of life of an individual undergoing chemotherapy. Furthermore, this invention improves the treatment of disease by increasing the therapeutic index of chemotherapy drugs by administering the herbal composition PHY906 to a mammal undergoing such chemotherapy.

Abstract: Method of using stereo recording to control the flashing of multiple lamps includes steps of: recording sound sources generated by stereo sound source venue or an electronic device and storing the recorded analog signal in audio signal sampling unit of signal processing device, then amplifying analog signal converting into a digital signal, then separating digital signal into left and right channel signals and enhancing sound signal and then converting sound signal into a light flashing formula to obtain a light flashing parameter value, and then transmitting control commands to a left/right lamp driving unit and a central lamp driving unit respectively according to light flashing parameter value, and then left side lamps, central lamp and right side lamps respectively form staggered flashing according to light flashing parameter value of the operation control unit, so that the flashing light set produces light changes corresponding to the music rhythm and vocals.

Abstract: A method of using stereo recording to control the flashing of central lamps includes the steps of: providing left and right channel microphones in a stereo sound source venue or electronic device, and recording the plural sound sources generated by the left area, central area and right area of the stereo sound source, then storing the recorded analog signal in an audio signal sampling unit of a signal processing device, and then converting the sound signal into a light flashing formula to obtain a light flashing parameter value. According to the light flashing parameter value of the operation control unit, the left side lamps, the central lamps and the right side lamps respectively form staggered flashing, so that the flashing light set produces light changes corresponding to the music rhythm and vocals.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structure. The wall structure extends along the first direction and a second direction perpendicular to the first direction. The stacked gate structure is overlapped with the wall structure in the first direction and the second direction.

Abstract: The present invention provides a resonant switched capacitor voltage converter (RSCC), which is coupled to and operates synchronously with another RSCC. The RSCC includes: plural switches, a resonant inductor, a resonant capacitor, and a control circuit. The control circuit controls the switches, so that the resonant capacitor and the resonant inductor are connected in series to each other, to perform resonant operation in a switching period, thus converting an input voltage to an output voltage. The control circuit generates a zero current signal and a first synchronization signal when a resonant inductor current flowing through the resonant inductor is zero. The control circuit turns off at least one corresponding switch according to the zero current signal. The control circuit turns on at least one corresponding switch according to the zero-current signal and a second synchronization signal, so that the RSCC operates in synchronization with at least another RSCC.

Abstract: The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by the time ratio of the line time difference and the frame period. The TDI sensor further records defect pixels of a pixel array such that in integrating pixel data to integrators, the pixel data associated with the defect pixels is not integrated into corresponding integrators.

Abstract: Exemplary methods of semiconductor processing may include forming a layer of silicon-containing material on a semiconductor substrate. The methods may include performing a post-formation treatment on the layer of silicon-containing material to yield a treated layer of silicon-containing material. The methods may include contacting the treated layer of silicon-containing material with an adhesion agent. The methods may include forming a layer of a resist material on the treated layer of silicon-containing material.

Abstract: The present disclosure describes an apparatus with a local interconnect structure. The apparatus can include a first transistor, a second transistor, a first interconnect structure, a second interconnect structure, and a third interconnect structure. The local interconnect structure can be coupled to gate terminals of the first and second transistors and routed at a same interconnect level as reference metal lines coupled to ground and a power supply voltage. The first interconnect structure can be coupled to a source/drain terminal of the first transistor and routed above the local interconnect structure. The second interconnect structure can be coupled to a source/drain terminal of the second transistor and routed above the local interconnect structure. The third interconnect structure can be routed above the local interconnect structure and at a same interconnect level as the first and second interconnect structures.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: A plasma processing system is provided. The system includes a hydrogen gas supply and a hydrocarbon gas supply and a processing chamber. The system includes a first mass flow controller (MFC) for controlling hydrogen gas flow into the processing chamber and a second MFC for controlling hydrocarbon gas flow into the processing chamber. The system includes a plasma source for generating plasma at the processing chamber. The plasma is for etching SnO2. The system includes a controller for regulating the first MFC and the second MFC such that a ratio of hydrocarbon gas flow to the hydrogen gas flow into the processing chamber is between 1% and 60% so that when SnH4 is produced during said etching SnO2. The SnH4 is configured to react with hydrocarbon gas to produce an organotin compound that is volatilizable in a reaction that is more kinetically favorable than SnH4 decomposition into Sn powder.