Abstract: A system includes a bracket that is configured to support a photomask and is located at a first side of the photomask; an acoustic energy generator configured to generate acoustic energy, wherein the acoustic energy includes mechanical vibrations of a megasonic frequency and wavelength; and a fluid dispenser coupled to the acoustic energy generator such that the acoustic energy generated by the acoustic energy generator is received by the fluid dispenser to generate an acoustically agitated fluid stream directed at a second side of the photomask, wherein the first side of the photomask is opposite a second side of the photomask, and wherein the first side includes a pattern.

Abstract: An extreme ultraviolet (EUV) mask is received. The EUV mask has an EUV pellicle disposed thereover. The EUV pellicle is coupled to the EUV mask at least in part via glue that is disposed on the EUV mask. The EUV pellicle is removed, thereby exposing the glue. A localized glue-removal process is performed by targeting a region of the EUV mask on which the glue is disposed. The localized glue-removal process is performed without affecting other regions of the EUV mask that do not have the glue disposed thereon. The localized glue-removal process may include injecting a cleaning chemical onto the glue and removing a waste chemical produced by the cleaning chemical and the glue. The localized glue-removal process may also include a plasma process that applies plasma to the glue. The localized glue-removal process may further include a laser process that shoots a focused laser beam at the glue.

Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.

Abstract: A method of cleaning a photomask is disclosed. The method includes mixing a first chemical solution with a second chemical solution; and discharging the mixed chemical solution through an outlet of a nozzle to a surface of the photomask on which includes a ruthenium (Ru) layer, wherein the first chemical solution is configured to dislodge contaminant particles from the surface of the photomask and the second chemical solution is configured to provide an electron to the first chemical solution.

Abstract: The present disclosure provides a method of repairing a mask. The method includes inspecting a mask to identify a defect on the mask; performing a cleaning process to the mask using a non-thermal chemical solution to the mask; and repairing the mask to remove the defect from the mask. The non-thermal chemical solution is cooled by a cooling module to a working temperature below room temperature.

Abstract: The present disclosure provides a method of repairing a mask. The method includes inspecting a mask to identify a defect on the mask; performing a cleaning process to the mask using a non-thermal chemical solution to the mask; and repairing the mask to remove the defect from the mask. The non-thermal chemical solution is cooled by a cooling module to a working temperature below room temperature.

Abstract: A reflective mask includes a substrate; a reflective multilayer formed on the substrate; an absorber layer formed on the reflective multilayer, wherein the absorber layer is patterned to have openings according to an integrated circuit layout; and a protection layer formed over the reflective multilayer within the openings.

Abstract: A method of cleaning a photomask is disclosed. The method includes mixing a first chemical solution with a second chemical solution; and discharging the mixed chemical solution through an outlet of a nozzle to a surface of the photomask on which includes a ruthenium (Ru) layer, wherein the first chemical solution is configured to dislodge contaminant particles from the surface of the photomask and the second chemical solution is configured to provide an electron to the first chemical solution.

Abstract: A system includes a bracket that is configured to support a photomask and is located at a first side of the photomask; an acoustic energy generator configured to generate acoustic energy, wherein the acoustic energy includes mechanical vibrations of a megasonic frequency and wavelength; and a fluid dispenser coupled to the acoustic energy generator such that the acoustic energy generated by the acoustic energy generator is received by the fluid dispenser to generate an acoustically agitated fluid stream directed at a second side of the photomask, wherein the first side of the photomask is opposite a second side of the photomask, and wherein the first side includes a pattern.

Abstract: The present disclosure provides an apparatus in semiconductor manufacturing. The apparatus includes a mask, a pellicle frame attached to the mask, and a pellicle joined to the pellicle frame thereby forming a sealed enclosure bounded by the pellicle, the pellicle frame, and the mask. The apparatus further includes photo-catalyst particles introduced into the sealed enclosure before the sealed enclosure is formed. The photo-catalyst particles prevent haze formation within the enclosure during lithography exposure processes.

Abstract: A cleaning and inspection system includes a cleaning chamber and retaining structure disposed within the cleaning chamber and configured to secure an article to be cleaned within the cleaning chamber. The cleaning and inspection system also includes a gas distributor disposed within the cleaning chamber and configured to distribute a turbulent flow of gas into the cleaning chamber that facilitates removal of foreign particles from a surface of the article. Further, the system includes a particle collection surface positioned to collect foreign particles removed from the surface of the article.

Abstract: A method of removing particles from a surface of a reticle is disclosed. The reticle is placed in a carrier, a source gas is flowed into the carrier, and a plasma is generated within the carrier. Particles are then removed from a surface of the reticle using the generated plasma. A system of removing particles from a surface includes a carrier configured to house a reticle, a reticle stocker including the carrier, a power supply configured to apply a potential between an inner cover and an inner baseplate of the carrier, and a gas source configured to flow a gas into the carrier. A plasma may be generated within the carrier, and particles can be removed from a surface of the reticle using the generated plasma. An acoustic energy source configured to agitate at least one of the source gas and the generated plasma may be provided to facilitate particle removal using an agitated plasma.

Abstract: A cleaning and inspection system includes a cleaning chamber and retaining structure disposed within the cleaning chamber and configured to secure an article to be cleaned within the cleaning chamber. The cleaning and inspection system also includes a gas distributor disposed within the cleaning chamber and configured to distribute a turbulent flow of gas into the cleaning chamber that facilitates removal of foreign particles from a surface of the article. Further, the system includes a particle collection surface positioned to collect foreign particles removed from the surface of the article.

Abstract: A reflective mask includes a substrate; a reflective multilayer formed on the substrate; an absorber layer formed on the reflective multilayer, wherein the absorber layer is patterned to have openings according to an integrated circuit layout; and a protection layer formed over the reflective multilayer within the openings.

Abstract: The present disclosure provides an apparatus in semiconductor manufacturing. The apparatus includes a mask, a pellicle frame attached to the mask, and a pellicle joined to the pellicle frame thereby forming a sealed enclosure bounded by the pellicle, the pellicle frame, and the mask. The apparatus further includes photo-catalyst particles introduced into the sealed enclosure before the sealed enclosure is formed. The photo-catalyst particles prevent haze formation within the enclosure during lithography exposure processes.

Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer formed on the substrate; a capping layer formed on the reflective multilayer and having a hardness greater than about 8; and an absorber layer formed on the capping layer and patterned according to an integrated circuit layout.

Abstract: A method of manufacturing is disclosed. An exemplary method includes providing a substrate and forming one or more layers over the substrate. The method further includes forming a surface layer over the one or more layers. The method further includes performing a patterning process on the surface layer thereby forming a pattern on the surface layer. The method further includes performing a cleaning process using a cleaning solution to clean a top surface of the substrate. The cleaning solution includes tetra methyl ammonium hydroxide (TMAH), hydrogen peroxide (H2O2) and water (H2O).

Abstract: An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.

Abstract: The present disclosure provides a lithography system. The lithography system includes an exposing module configured to perform a lithography exposing process using a mask secured on a mask stage; and a cleaning module integrated in the exposing module and designed to clean at least one of the mask and the mask stage using an attraction mechanism.

Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer formed on the substrate; a capping layer formed on the reflective multilayer and having a hardness greater than about 8; and an absorber layer formed on the capping layer and patterned according to an integrated circuit layout.