Patents by Inventor Chi-Lun Lu
Chi-Lun Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7383530Abstract: A method and system is disclosed for examining mask pattern fidelity. A mask picture is generated from a first mask with a first OPC model applied to a mask design. The mask picture is converted into a mask based simulation file. A first simulation is conducted under a first set of predetermined lithography processing conditions using the converted simulation file to generate one or more files of a first set representing wafer photo resist profile thereof. The first OPC model is applied to the mask design in the database mask file. A second simulation is conducted under the first set of predetermined lithography processing conditions using the OPCed mask design to generate one or more files of a second set representing wafer photo resist profile thereof. The first and second sets of files are evaluated for inspecting mask fidelity.Type: GrantFiled: April 13, 2007Date of Patent: June 3, 2008Assignee: Taiwan Semiconductor Manufacturing Company, LtdInventors: Wen-Chuan Wang, Shih-Ming Chang, Chih-Cheng Chin, Chi-Lun Lu, Sheng-Chi Chin, Hung-Chang Hsieh
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Publication number: 20080113279Abstract: A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.Type: ApplicationFiled: November 14, 2007Publication date: May 15, 2008Inventors: Shih-Ming Chang, Chung-Hsing Chang, Chih-Cheng Chin, Wen-Chuan Wang, Chi-Lun Lu, Sheng-Chi Chin, Chin-Hsiang Lin
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Publication number: 20080102538Abstract: An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.Type: ApplicationFiled: January 19, 2007Publication date: May 1, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih Ming Chang, Chi-Lun Lu
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Publication number: 20080099439Abstract: An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.Type: ApplicationFiled: January 19, 2007Publication date: May 1, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih Ming Chang, Chi-Lun Lu
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Publication number: 20080100214Abstract: An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.Type: ApplicationFiled: October 27, 2006Publication date: May 1, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih Ming Chang, Chi-Lun Lu
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Patent number: 7316872Abstract: A patterning device for implementing a pattern on a substrate includes a main pattern feature and a sacrificial pattern feature. Both the main pattern feature and the sacrificial pattern feature are transferable to an overlying layer on the substrate. The sacrificial pattern feature is positioned a distance from the main pattern feature and is configured to have a dimension less than an etching bias of an etching process. The etching process is capable of transferring the main pattern feature to an underlying layer, such that the sacrificial pattern feature adjusts an etching behavior of the main pattern feature and is eliminated from the underlying layer.Type: GrantFiled: October 17, 2005Date of Patent: January 8, 2008Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Ming Chang, Chih-Cheng Chin, Wen-Chuan Wang, Chi-Lun Lu, Sheng-Chi Chin
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Patent number: 7312021Abstract: A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.Type: GrantFiled: March 3, 2004Date of Patent: December 25, 2007Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Ming Chang, Chung-Hsing Chang, Chih-Cheng Chin, Wen-Chuan Wang, Chi-Lun Lu, Sheng-Chi Chin, Chin-Hsiang Lin
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Publication number: 20070291244Abstract: Disclosed is a lithography system. The lithography system includes a source designed to provide energy; an imaging system configured to direct the energy onto a substrate to form a predefined image thereon, and defining an optical axis; and an aperture incorporated with the imaging system, the aperture having a plurality of transmitting regions defined along radial axis not parallel to the optical axis, and each transmitting region operable to transmit the energy with adjustable intensity.Type: ApplicationFiled: June 14, 2006Publication date: December 20, 2007Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Ming CHANG, Wen-Chuan WANG, Chih-Cheng CHIN, Chi-Lun LU, Sheng-Chi CHIN, Hung Chang Hsieh
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Publication number: 20070250805Abstract: A method and system is disclosed for examining mask pattern fidelity. A mask picture is generated from a first mask with a first OPC model applied to a mask design. The mask picture is converted into a mask based simulation file. A first simulation is conducted under a first set of predetermined lithography processing conditions using the converted simulation file to generate one or more files of a first set representing wafer photo resist profile thereof. The first OPC model is applied to the mask design in the database mask file. A second simulation is conducted under the first set of predetermined lithography processing conditions using the OPCed mask design to generate one or more files of a second set representing wafer photo resist profile thereof. The first and second sets of files are evaluated for inspecting mask fidelity.Type: ApplicationFiled: April 13, 2007Publication date: October 25, 2007Inventors: Wen-Chuan Wang, Shih-Ming Chang, Chih-Cheng Chin, Chi-Lun Lu, Sheng-Chi Chin, Hung-Chang Hsieh
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Publication number: 20070231935Abstract: A method for patterning a substrate includes forming a material layer on the substrate; performing a first etching on the material layer to form a pattern; measuring the pattern of the material layer using an optical spectrum metrology tool; determining whether the measuring indicates that the etching step achieved a predefined result; and producing an etching recipe and performing a second etching of the material layer using the etching recipe if the predefined result was not achieved.Type: ApplicationFiled: September 8, 2006Publication date: October 4, 2007Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chang-Cheng HUNG, Hung Chang HSIEH, Shih-Ming CHANG, Wen-Chuan WANG, Chi-Lun LU, Allen HSIA, Yen-Bin HUANG
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Publication number: 20070087571Abstract: A patterning device for implementing a pattern on a substrate includes a main pattern feature and a sacrificial pattern feature. Both the main pattern feature and the sacrificial pattern feature are transferable to an overlying layer on the substrate. The sacrificial pattern feature is positioned a distance from the main pattern feature and is configured to have a dimension less than an etching bias of an etching process. The etching process is capable of transferring the main pattern feature to an underlying layer, such that the sacrificial pattern feature adjusts an etching behavior of the main pattern feature and is eliminated from the underlying layer.Type: ApplicationFiled: October 17, 2005Publication date: April 19, 2007Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Ming Chang, Chih-Cheng Chin, Wen-Chuan Wang, Chi-Lun Lu, Sheng-Chi Chin
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Publication number: 20070075037Abstract: A system and method are disclosed for monitoring a dimensional change of a pattern for an object having a transparent layer exposed through the pattern and a non-transparent pattern laminated therewith. According to the method, a first beam is projected to the pattern. A second beam resulted from the first beam passing through the transparent layer exposed by the pattern, or from the first beam reflected from the non-transparent layer of the pattern, is detected. A value of a predetermined property from the second beam detected is obtained. A variation of the value is monitored for identifying the dimensional change of the pattern.Type: ApplicationFiled: October 5, 2005Publication date: April 5, 2007Inventors: Shih-Ming Chang, Chen-Yuan Hsia, Wen-Chuan Wang, Chi-Lun Lu, Yen-Bin Huang, Chang-Cheng Hung, Chia-Jen Chen, Kai-Chung Liu, Hsin-Chang Lee, Hong Hsieh
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Publication number: 20070039631Abstract: A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.Type: ApplicationFiled: August 16, 2005Publication date: February 22, 2007Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Yuan Hsia, Chang-Cheng Hung, Chi-Lun Lu, Shih-Ming Chang, Wen-Chuan Wang, Yen-Bin Huang, Ching-Yu Chang, Chin-Hsiang Lin
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Patent number: 7060400Abstract: A method of fabricating a photomask having improved critical dimension (CD) uniformity that meets or exceeds 90 nanometer technology requirements. The method includes the steps of: providing a transparent substrate covered with a layer of opaque material and a layer of photoresist; patterning the layer of photoresist to expose an area of the layer of opaque material that has a shape that follows a contour of a main pattern area to be defined by the layer of opaque material; removing the exposed area to define the layer of opaque material into the main pattern area and an area that surrounds the main pattern area; removing the patterned layer of photoresist; and removing the surrounding area of the layer of opaque material.Type: GrantFiled: August 8, 2003Date of Patent: June 13, 2006Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Chuan Wang, Shih-Ming Chang, Chih-Chen Chin, Chi-Lun Lu, Sheng-Chi Chin, Hung-Chang Hsieh
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Publication number: 20050147895Abstract: A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.Type: ApplicationFiled: March 3, 2004Publication date: July 7, 2005Inventors: Shih-Ming Chang, Chung-Hsing Chang, Chih-Cheng Chin, Wen-Chuan Wang, Chi-Lun Lu, Sheng-Chi Chin, Chin-Hsiang Lin
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Publication number: 20050031966Abstract: A method of fabricating a photomask having improved critical dimension (CD) uniformity that meets or exceeds 90 nanometer technology requirements. The method includes the steps of: providing a transparent substrate covered with a layer of opaque material and a layer of photoresist; patterning the layer of photoresist to expose an area of the layer of opaque material that has a shape that follows a contour of a main pattern area to be defined by the layer of opaque material; removing the exposed area to define the layer of opaque material into the main pattern area and an area that surrounds the main pattern area; removing the patterned layer of photoresist; and removing the surrounding area of the layer of opaque material.Type: ApplicationFiled: August 8, 2003Publication date: February 10, 2005Inventors: Wen-Chuan Wang, Shih-Ming Chang, Chih-Chen Chin, Chi-Lun Lu, Sheng-Chi Chin, Hung-Chang Hsieh
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Publication number: 20040265704Abstract: A multiple-exposure defect elimination process for semiconductor devices being fabricated on semiconductor wafers using photomask parts, including one mask part that is defective, is disclosed. A semiconductor wafer is exposed to a first mask part that is at least partially defective, and then is exposed to a second mask part corresponding to the first mask part but that is at least substantially free from defects or with defects at different locations. The mask parts may be on the same or different photomasks, and have the same layout for a semiconductor device that is being fabricated. Furthermore, the semiconductor wafer may be exposed to the second or other additional mask parts one or more additional times.Type: ApplicationFiled: June 26, 2003Publication date: December 30, 2004Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Ming Chang, Chih-Cheng Chin, Wen-Chuan Wang, Chi-Lun Lu, Sheng-Chi Chin, Chin-Hsiang Lin
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Publication number: 20040225488Abstract: A method and system is disclosed for examining mask pattern fidelity. First, a mask picture is generated from a first mask with a first OPC model applied to a mask design thereon. The mask picture is then converted into a mask based simulation file. A first simulation is conducted under a first set of predetermined lithography processing conditions using the converted simulation file to generate one or more files of a first set representing wafer photo resist profile thereof. On the other hand, a mask design in a database mask file is identified which was used for generating the first mask. The first OPC model is applied to the mask design in the database mask file. A second simulation is then conducted under the first set of predetermined lithography processing conditions using the OPCed mask design to generate one or more files of a second set representing wafer photo resist profile thereof. The first and second sets of files are then evaluated together for the purpose of inspecting mask fidelity.Type: ApplicationFiled: September 19, 2003Publication date: November 11, 2004Inventors: Wen-Chuan Wang, Shih-Ming Chang, Chih-Cheng Chin, Chi-Lun Lu, Sheng-Chi Chin, Hung-Chang Hsieh