Abstract: The invention provides a memory apparatus, a charge pump circuit, and a voltage pumping method thereof. The charge pump circuit including a plurality of delay units, a latch circuit, and a plurality of charge pump units. The delay units respectively generate a plurality clock signals according to an output clock signal. The latch circuit receive a final stage clock signal of the clock signals and a latch enable signal. The latch circuit decides whether to latch final stage clock signal or not to generate the output clock signal according to the latch enable signal. The first stage of the charge pump unit receives an input voltage, and the charge pump units operate a voltage pumping operation on the input voltage to generate an output voltage according to the clock signals and the output clock signal.

Abstract: The invention provides a memory apparatus, a charge pump circuit, and a voltage pumping method thereof. The charge pump circuit including a plurality of delay units, a latch circuit, and a plurality of charge pump units. The delay units respectively generate a plurality clock signals according to an output clock signal. The latch circuit receive a final stage clock signal of the clock signals and a latch enable signal. The latch circuit decides whether to latch final stage clock signal or not to generate the output clock signal according to the latch enable signal. The first stage of the charge pump unit receives an input voltage, and the charge pump units operate a voltage pumping operation on the input voltage to generate an output voltage according to the clock signals and the output clock signal.

Abstract: A memory cell array includes a first bit line, a first word line, a first source line pair and a first memory cell. A select terminal of the first memory cell is connected with the first word line. A first control terminal of the first memory cell is connected with a first source line of the first source line pair. A second control terminal of the first memory cell is connected with a second source line of the first source line pair. A third control terminal of the first memory cell is connected with the first bit line.

Abstract: A charge pump regulator includes a charge pump circuit, a voltage divider, a mode determining circuit, a frequency divider, and a selecting circuit. The charge pump circuit receives an oscillation signal and generates an output signal. The voltage divider receives the output signal and generates a first and a second divided voltages. The mode determining circuit determines whether the charge pump regulator is in a pumping mode or a detecting mode, and issues a first control signal. When the mode determining circuit is in the pumping mode, a pumping enable signal is activated and the clock signal is converted into the oscillation signal by the selecting circuit. When the mode determining circuit is in the detecting mode, a detecting enable signal is activated and the frequency divider generates a detecting signal according to the first control signal.

Abstract: A charge pump regulator includes a charge pump circuit, a voltage divider, a mode determining circuit, a frequency divider, and a selecting circuit. The charge pump circuit receives an oscillation signal and generates an output signal. The voltage divider receives the output signal and generates a first and a second divided voltages. The mode determining circuit determines whether the charge pump regulator is in a pumping mode or a detecting mode, and issues a first control signal. When the mode determining circuit is in the pumping mode, a pumping enable signal is activated and the clock signal is converted into the oscillation signal by the selecting circuit. When the mode determining circuit is in the detecting mode, a detecting enable signal is activated and the frequency divider generates a detecting signal according to the first control signal.

Abstract: A sensing method of a current sensing amplifier is provided used for determining a storing state of a cell of a non-volatile memory device during a read cycle. After a sensing node and a reference node are adjusted to a constant voltage, the sensing node and the reference node are maintained in a floating state. Then, the sensing node is connected with a data line to receive a cell current from the cell, and the reference node is connected with a reference current source to receive a reference current from the reference current source. When a reference voltage of the reference node reaches a preset voltage, the storing state of the cell is determined according to a relationship between a sensing voltage of the sensing node and the preset voltage.

Abstract: A sensing method of a current sensing amplifier is provided used for determining a storing state of a cell of a non-volatile memory device during a read cycle. After a sensing node and a reference node are adjusted to a constant voltage, the sensing node and the reference node are maintained in a floating state. Then, the sensing node is connected with a data line to receive a cell current from the cell, and the reference node is connected with a reference current source to receive a reference current from the reference current source. When a reference voltage of the reference node reaches a preset voltage, the storing state of the cell is determined according to a relationship between a sensing voltage of the sensing node and the preset voltage.

Abstract: A clock trimming apparatus includes an oscillator, a judging unit, a latching unit, and a tracking unit. The oscillator has an input terminal receiving a bias signal and an output terminal generating a clock signal. After a frequency division is performed on the clock signal, the judging unit generates a frequency-divided signal. If the frequency-divided signal matches the reference signal, a pass signal generated by the judging unit is activated. The latching unit is used for generating a trimming completion signal. After the pass signal is activated, the trimming completion signal is activated. The tracking unit is used for counting a pulse number of the reference signal and providing the bias signal to the oscillator according to a trimming code. After the trimming completion signal is activated, the trimming code is stopped being adjusted.

Abstract: A charge pump device is coupled to first and second input terminals receiving an AC signal and comprises an electric switch set and two voltage boost circuits. The electric switch set is coupled to the first and second input terminals and a ground terminal and switches the conduction status thereof according to the AC signal. The two voltage boost circuits are interconnected and coupled to the first and second input terminals and the electric switch set. The boost circuits receive the AC signal according to the conduction status, respectively boost voltage in positive and negative semi-periods of the AC signal, and alternatively output a voltage at least two times the peak voltage of the AC signal, to a load. The present invention not only boosts voltage by several folds within a cycle but also outputs voltage by dual phases to reduce ripple of output voltage.

Abstract: A charge pump device is coupled to first and second input terminals receiving an AC signal and comprises an electric switch set and two voltage boost circuits. The electric switch set is coupled to the first and second input terminals and a ground terminal and switches the conduction status thereof according to the AC signal. The two voltage boost circuits are interconnected and coupled to the first and second input terminals and the electric switch set. The boost circuits receive the AC signal according to the conduction status, respectively boost voltage in positive and negative semi-periods of the AC signal, and alternatively output a voltage at least two times the peak voltage of the AC signal, to a load. The present invention not only boosts voltage by several folds within a cycle but also outputs voltage by dual phases to reduce ripple of output voltage.