Patents by Inventor Chia-Hua Chu

Chia-Hua Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INTEGRATION SCHEME FOR MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DEVICES
    Publication number: 20200115222
    Abstract: Processes for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices are provided. In some embodiments, the MEMS devices are formed on a sacrificial substrate or wafer, the sacrificial substrate or wafer is bonded to a CMOS die or wafer, and the sacrificial substrate or wafer is removed. In other embodiments, the MEMS devices are formed over a sacrificial region of a CMOS die or wafer and the sacrificial region is subsequently removed. Integrated circuit (ICs) resulting from the processes are also provided.
    Type: Application
    Filed: December 6, 2019
    Publication date: April 16, 2020
    Inventors: Chun-Wen Cheng, Chia-Hua Chu
  • Manufacturing method of semiconductor structure including heater
    Patent number: 10618804
    Abstract: A method of manufacturing a semiconductor structure includes receiving a substrate, receiving a heater, receiving an electrode, and receiving a sensing material. The substrate have a first surface, a second surface opposite to the first surface and a plurality of vias extending from the second surface toward the first surface and filled with a conductive or semiconductive material and a first oxide layer, the first oxide layer surrounding the conductive or semiconductive material in the plurality of vias, and a second oxide layer disposed over the first surface and the second surface. The heater is disposed within a membrane over the first surface of the substrate and electrically connected with the substrate. The electrode is over the heater and the membrane; and the sensing material covers a portion of the electrode.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: April 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Fei-Lung Lai, Shiang-Chi Lin
  • MANUFACTURING METHOD OF SENSOR IN AN INTERNET-OF-THINGS
    Publication number: 20200109476
    Abstract: The present disclosure provides a method of manufacturing a gas sensor. The method includes the following operations: a substrate is received; a conductor layer is formed over the substrate; the conductor layer is patterned to form a conductor with a plurality of openings by an etching operation, the openings being arranged in a repeating pattern, a minimal dimension of the opening being about 4 micrometers; and a gas-sensing film is formed over the conductor.
    Type: Application
    Filed: December 6, 2019
    Publication date: April 9, 2020
    Inventors: MING-TA LEI, CHIA-HUA CHU, HSIN-CHIH CHIANG, TUNG-TSUN CHEN, CHUN-WEN CHENG
  • DUAL BACK-PLATE AND DIAPHRAGM MICROPHONE
    Publication number: 20200107130
    Abstract: A MEMS microphone includes a substrate having an opening, a first diaphragm, a first backplate, a second diaphragm, and a second backplate. The first diaphragm faces the opening in the substrate. The first backplate includes multiple accommodating-openings and it is spaced apart from the first diaphragm. The second diaphragm joints the first diaphragm together at multiple locations by pillars passing through the accommodating-openings in the first backplate. The first backplate is located between the first diaphragm and the second diaphragm. The second backplate includes at least one vent hole and it is spaced apart from the second diaphragm. The second diaphragm is located between the first backplate and the second backplate.
    Type: Application
    Filed: July 9, 2019
    Publication date: April 2, 2020
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Wen-Tuan Lo
  • Integrated microphone device and manufacturing method thereof
    Patent number: 10609463
    Abstract: An integrated microphone device is provided. The integrated microphone device includes a substrate, a plate, and a membrane. The substrate includes an aperture allowing acoustic pressure to pass through. The plate is disposed on a side of the substrate. The membrane is disposed between the substrate and the plate and movable relative to the plate as acoustic pressure strikes the membrane. The membrane includes a vent valve having an open area that is variable in response to a change in acoustic pressure.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: March 31, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Wen Cheng, Wen-Cheng Kuo, Chia-Hua Chu, Chun-Yin Tsai, Tzu-Heng Wu
  • METHOD OF MAKING OHMIC CONTACT ON LOW DOPED BULK SILICON FOR OPTICAL ALIGNMENT
    Publication number: 20200095119
    Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip including an epitaxial layer overlying a microelectromechanical systems (MEMS) substrate. The method includes bonding a MEMS substrate to a carrier substrate, the MEMS substrate includes monocrystalline silicon. An epitaxial layer is formed over the MEMS substrate, the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts are formed over the epitaxial layer, the plurality of contacts respectively form ohmic contacts with the epitaxial layer.
    Type: Application
    Filed: July 18, 2019
    Publication date: March 26, 2020
    Inventors: Kuei-Sung Chang, Chia-Hua Chu, Shang-Ying Tsai
  • MEMS DEVICE AND METHOD FOR FORMING THE SAME
    Publication number: 20200071157
    Abstract: A MEMS device includes a first layer and a second layer including a same material, a third layer disposed between the first layer and the second layer, a first air gap separating the first layer and the third layer, a second air gap separating the second layer and the third layer, a plurality of first pillars exposed to the first air gap and arranged in contact with the first layer and the third layer, a plurality of second pillars exposed to the second air gap and arranged in contact with the second layer and the third layer.
    Type: Application
    Filed: August 29, 2018
    Publication date: March 5, 2020
    Inventors: CHEN HSIUNG YANG, CHUN-WEN CHENG, CHIA-HUA CHU, EN-CHAN CHEN
  • MEMS Structure and Method of Forming Same
    Publication number: 20200067425
    Abstract: A microelectromechanical system (MEMS) device includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. The MEMS device further includes a protrusion extending from the substrate and configured to contact the movable element when the movable element moves in the at least one degree of freedom, wherein the protrusion comprises a surface having a water contact angle of higher than about 15° measured in air.
    Type: Application
    Filed: October 30, 2019
    Publication date: February 27, 2020
    Inventors: Yi Heng Tsai, Chia-Hua Chu, Kuei-Sung Chang
  • MEMS Devices and Methods of Forming Same
    Publication number: 20200062588
    Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.
    Type: Application
    Filed: October 28, 2019
    Publication date: February 27, 2020
    Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
  • METHOD FOR INTEGRATING COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DEVICES WITH MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES USING A FLAT SURFACE ABOVE A SACRIFICIAL LAYER
    Publication number: 20200024135
    Abstract: An integrated circuit (IC) with an integrated microelectromechanical systems (MEMS) structure is provided. In some embodiments, the IC comprises a semiconductor substrate, a back-end-of-line (BEOL) interconnect structure, the integrated MEMS structure, and a cavity. The BEOL interconnect structure is over the semiconductor substrate, and comprises wiring layers stacked in a dielectric region. Further, an upper surface of the BEOL interconnect structure is planar or substantially planar. The integrated MEMS structure overlies and directly contacts the upper surface of the BEOL interconnect structure, and comprises an electrode layer. The cavity is under the upper surface of the BEOL interconnect structure, between the MEMS structure and the BEOL interconnect structure.
    Type: Application
    Filed: September 30, 2019
    Publication date: January 23, 2020
    Inventors: Chun-Wen Cheng, Chia-Hua Chu
  • MEMS structure and method of forming same
    Patent number: 10541627
    Abstract: A microelectromechanical system (MEMS) device includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. The MEMS device further includes a protrusion extending from the substrate and configured to contact the movable element when the movable element moves in the at least one degree of freedom, wherein the protrusion comprises a surface having a water contact angle of higher than about 15° measured in air.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: January 21, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi Heng Tsai, Chia-Hua Chu, Kuei-Sung Chang
  • Structure and formation method of semiconductor device structure
    Patent number: 10526196
    Abstract: Structures and formation methods of a semiconductor device structure are provided. A semiconductor device structure includes a first dielectric layer and a second dielectric layer over a semiconductor substrate. A cavity penetrates through the first dielectric layer and the second dielectric layer. The semiconductor device structure also includes a first movable membrane between the first dielectric layer and the second dielectric layer. The first movable membrane is partially exposed through the cavity. The first movable membrane includes first corrugated portions arranged along an edge of the cavity.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: January 7, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Chuan Teng, Chun-Yin Tsai, Chia-Hua Chu, Chun-Wen Cheng
  • MEMS pressure sensor and microphone devices having through-vias and methods of forming same
    Patent number: 10519032
    Abstract: A method embodiment includes providing a MEMS wafer. A portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer. The carrier wafer is etched to expose the first membrane and a first surface of the second membrane to an ambient environment. A MEMS structure is formed in the MEMS wafer. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure and a second sealed cavity including a second surface of the second membrane for the pressure sensor device. The cap wafer comprises an interconnect structure. A through-via electrically connected to the interconnect structure is formed in the cap wafer.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: December 31, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu
  • CMOS compatible BioFET
    Patent number: 10520467
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: December 31, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Alexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
  • MEMS MICROPHONE HAVING DIAPHRAGM
    Publication number: 20190394573
    Abstract: A MEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.
    Type: Application
    Filed: June 25, 2018
    Publication date: December 26, 2019
    Inventors: Chun-Wen Cheng, Chia-Hua Chu, Chun Yin Tsai
  • Integration scheme for microelectromechanical systems (MEMS) devices and complementary metal-oxide-semiconductor (CMOS) devices
    Patent number: 10513429
    Abstract: Processes for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices are provided. In some embodiments, the MEMS devices are formed on a sacrificial substrate or wafer, the sacrificial substrate or wafer is bonded to a CMOS die or wafer, and the sacrificial substrate or wafer is removed. In other embodiments, the MEMS devices are formed over a sacrificial region of a CMOS die or wafer and the sacrificial region is subsequently removed. Integrated circuit (ICs) resulting from the processes are also provided.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: December 24, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu
  • Sensor in an internet-of-things and manufacturing method of the same
    Patent number: 10508345
    Abstract: Some embodiments of the present disclosure provide a gas sensor in an IOT. The gas sensor includes a substrate, a conductor disposed above the substrate, and a sensing film disposed over the conductor. The conductor has a top-view pattern including a plurality of openings, a minimal dimension of the opening being less than about 4 micrometer; and a perimeter enclosing the opening. Some embodiments of the present disclosure provide a method of manufacturing a gas sensor. The method includes receiving a substrate; forming a conductor, over the substrate; patterning the conductor to form a plurality of openings in the conductor by an etching operation, and forming a gas-sensing film over the conductor. The openings are arranged in a repeating pattern, and a minimal dimension of the opening being about 4 micrometer.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: December 17, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ming-Ta Lei, Chia-Hua Chu, Hsin-Chih Chiang, Tung-Tsun Chen, Chun-Wen Cheng
  • MEMS integrated pressure sensor devices and methods of forming same
    Patent number: 10508029
    Abstract: A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Hua Chu, Chun-Wen Cheng
  • CMOS-MEMS structure and method of forming the same
    Patent number: 10508027
    Abstract: The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer; and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.
    Type: Grant
    Filed: August 8, 2018
    Date of Patent: December 17, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Jung-Huei Peng, Chia-Hua Chu, Fei-Lung Lai, Shiang-Chi Lin
  • MEMS devices and methods of manufacturing the same
    Patent number: 10494252
    Abstract: The present disclosure provides a CMOS MEMS device. The CMOS MEMS device includes a first substrate, a second substrate, a first polysilicon and a second polysilicon. The second substrate includes a movable part and is located over the first substrate. The first polysilicon penetrates the second substrate and is adjacent to a first side of the movable part of the second substrate. The second polysilicon penetrates the second substrate and is adjacent to a second side of the movable part of the second substrate.
    Type: Grant
    Filed: September 22, 2015
    Date of Patent: December 3, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yu-Chia Liu, Chia-Hua Chu, Chun-Wen Cheng