Abstract: A transparent display includes nanoparticles having wavelength-selective scattering (e.g., resonant scattering) to preferentially scatter light at one or more discrete wavelengths so as to create images. The nanoparticles transmit light at other wavelengths to maintain a high transparency of the display. The nanoparticles are disposed in proximity to a thin film, which can enhance the scattering the process by reflecting light back to the nanoparticles for re-scattering or increasing the quality factor of the resonant scattering.

Abstract: Semiconductor devices and a method for forming the same are provided. In various embodiments, a method for forming a semiconductor device includes receiving a semiconductor substrate including a channel. An atmosphere-modulation layer is formed over the channel. An annealing process is performed to form an interfacial layer between the channel and the atmosphere-modulation layer.

Abstract: The present invention provides a laser projection clock, comprising a driving device, one or a plurality of pointer light source device, and one or a plurality of grating. The driving device comprises one or a plurality of rotating shafts and power elements for driving the one or plurality of the rotating shafts to rotate at different speeds respectively. The one or plurality of pointer light source devices is configured on one side of the driving device to each output a laser beam. The one or plurality of gratings is configured on the one or a plurality of rotating shafts in a one-on-one manner in order to be rotated by the one or plurality of rotating shafts respectively. The grating has an indication pattern, and the one or plurality of laser beams are projected to a projection plane through the one or a plurality of indication patterns of the one or plurality of gratings to form one or plurality of laser indications respectively.

Abstract: A method and structure for providing conformal doping of FinFET fin structures, for example by way of a thermal treatment process, includes forming a gate stack at least partially over a fin extending from a substrate. In various embodiments, a barrier metal layer is deposited over the gate stack. By way of example, a thermal fluorine treatment is performed, where the thermal fluorine treatment forms a fluorinated layer within the barrier metal layer, and where the fluorinated layer includes a plurality of fluorine atoms. In some embodiments, after forming the fluorinated layer, an anneal is performed to drive at least some of the plurality of fluorine atoms into the gate stack (e.g., into the interfacial layer and the high-K dielectric layer), thereby conformally doping the gate stack with the at least some of the plurality of fluorine atoms.

Abstract: Semiconductor devices and a method for forming the same are provided. In various embodiments, a method for forming a semiconductor device includes receiving a semiconductor substrate including a channel. An atmosphere-modulation layer is formed over the channel. An annealing process is performed to form an interfacial layer between the channel and the atmosphere-modulation layer.

Abstract: Methods and devices are provided herein for enhancing robustness of a bipolar electrostatic discharge (ESD) device. The robustness of a bipolar ESD device includes providing an emitter region and a collector region adjacent to the emitter region. An isolation structure is provided between the emitter region and the collector region. A ballasting characteristic at the isolation structure is modified by inserting at least one partition structure therein. Each partition structure extends substantially abreast at least one of the emitter and the collector regions.

Abstract: A capacitor cell is provided. A first PMOS transistor is coupled between a power supply and a first node, having a gate coupled to a second node. A first NMOS transistor coupled between a ground and the second node, having a gate coupled to the first node. A second PMOS transistor, having a drain coupled to the second node, a gate coupled to the second node, and a source coupled to the power supply or the first node. A second NMOS transistor, having a drain coupled to the first node, a gate coupled to the first node, and a source coupled to the ground or the second node.

Abstract: A method and structure for providing conformal doping of FinFET fin structures, for example by way of a thermal treatment process, includes forming a gate stack at least partially over a fin extending from a substrate. In various embodiments, a barrier metal layer is deposited over the gate stack. By way of example, a thermal fluorine treatment is performed, where the thermal fluorine treatment forms a fluorinated layer within the barrier metal layer, and where the fluorinated layer includes a plurality of fluorine atoms. In some embodiments, after forming the fluorinated layer, an anneal is performed to drive at least some of the plurality of fluorine atoms into the gate stack (e.g., into the interfacial layer and the high-K dielectric layer), thereby conformally doping the gate stack with the at least some of the plurality of fluorine atoms.

Abstract: A photosensitive organic dye is adapted to be used in a photoelectric converting device such as a dye-sensitized solar cell. The photosensitive organic dye having a structural formula (I): where, Aryl1 represents substituted or unsubstituted aryl with one or more aromatic rings, NR2R3 represents a substituted electron-donating group, wherein N represents a nitrogen atom, and R2 and R3 independently represent identical or different substituted or unsubstituted hydrocarbon groups, L represents an optional linker unit, and A represents an electron-withdrawing group.

Abstract: A method and structure of improving the robustness of an electrostatic discharge (ESD) protection device is disclosed. One aspect of the instant disclosure provides a semiconductor structure that comprises: a first well structure; a second well structure arranged adjacent to the isolation structure in the substrate, a diffusion region respectively disposed in the first and the second well structures; an isolation structure arranged between the well structures and laterally separating the diffusion regions; and a partition structure arranged in the isolation structure. The partition structure affects a steeper slope on a lateral surface of the isolation structure bordering at least one of the diffusion regions, thereby modifying a ballasting characteristic of the isolation structure.

Abstract: A method and structure for providing conformal doping of FinFET fin structures, for example by way of a thermal treatment process, includes forming a gate stack at least partially over a fin extending from a substrate. In various embodiments, a barrier metal layer is deposited over the gate stack. By way of example, a thermal fluorine treatment is performed, where the thermal fluorine treatment forms a fluorinated layer within the barrier metal layer, and where the fluorinated layer includes a plurality of fluorine atoms. In some embodiments, after forming the fluorinated layer, an anneal is performed to drive at least some of the plurality of fluorine atoms into the gate stack (e.g., into the interfacial layer and the high-K dielectric layer), thereby conformally doping the gate stack with the at least some of the plurality of fluorine atoms.

Abstract: Transparent displays enable many useful applications, including heads-up displays for cars and aircraft as well as displays on eyeglasses and glass windows. Unfortunately, transparent displays made of organic light-emitting diodes are typically expensive and opaque. Heads-up displays often require fixed light sources and have limited viewing angles. And transparent displays that use frequency conversion are typically energy inefficient. Conversely, the present transparent displays operate by scattering visible light from resonant nanoparticles with narrowband scattering cross sections and small absorption cross sections. More specifically, projecting an image onto a transparent screen doped with nanoparticles that selectively scatter light at the image wavelength(s) yields an image on the screen visible to an observer. Because the nanoparticles scatter light at only certain wavelengths, the screen is practically transparent under ambient light.

Abstract: An automatic probe construction system and the method thereof are provided. The automatic probe construction system includes a data dereference analysis module, a probe selection module, and a probe verification module. The data dereference analysis module dereferences a plurality of target data of an electronic apparatus according to a plurality of pointers, and constructs a plurality of candidate probes. The probe selection module constructs a control flow graph according to the candidate probes and an instruction code of an executable image file, to select via the control flow graph from the candidate probes at least one dedicated probe. The probe verification module searches the executable image file for an instruction code corresponding to the dedicated probe, to verify the dedicated probe. Therefore, the dedicated probe can be constructed automatically, and the number of the dedicated probes is thus limited.

Abstract: A transparent display includes nanoparticles having wavelength-selective scattering (e.g., resonant scattering) to preferentially scatter light at one or more discrete wavelengths so as to create images. The nanoparticles transmit light at other wavelengths to maintain a high transparency of the display. The nanoparticles are disposed in proximity to a thin film, which can enhance the scattering the process by reflecting light back to the nanoparticles for re-scattering or increasing the quality factor of the resonant scattering.

Abstract: One or more techniques or systems for forming an electrostatic discharge (ESD) clamp are provided herein. In some embodiments, the ESD clamp includes a first pad and a second pad. For example, the first pad is a positive supply voltage (Vdd) pad and the second pad is a negative supply voltage (Vss) pad. In some embodiments, active regions and oxide regions are associated with substantially rounded shapes or obtuse angles. Additionally, metal regions are configured to be in contact with at least some of at least one of the active regions or the oxide regions and the first pad. In some embodiments, the metal regions are substantially wedge shaped. In this manner, an ESD clamp with enhanced performance is provided, at least because the respective active regions are substantially rounded or associated with obtuse angles, for example.

Abstract: Transparent displays enable many useful applications, including heads-up displays for cars and aircraft as well as displays on eyeglasses and glass windows. Unfortunately, transparent displays made of organic light-emitting diodes are typically expensive and opaque. Heads-up displays often require fixed light sources and have limited viewing angles. And transparent displays that use frequency conversion are typically energy inefficient. Conversely, the present transparent displays operate by scattering visible light from resonant nanoparticles with narrowband scattering cross sections and small absorption cross sections. More specifically, projecting an image onto a transparent screen doped with nanoparticles that selectively scatter light at the image wavelength(s) yields an image on the screen visible to an observer. Because the nanoparticles scatter light at only certain wavelengths, the screen is practically transparent under ambient light.

Abstract: A method and structure for providing conformal doping of FinFET fin structures, for example by way of a thermal treatment process, includes forming a gate stack at least partially over a fin extending from a substrate. In various embodiments, a barrier metal layer is deposited over the gate stack. By way of example, a thermal fluorine treatment is performed, where the thermal fluorine treatment forms a fluorinated layer within the barrier metal layer, and where the fluorinated layer includes a plurality of fluorine atoms. In some embodiments, after forming the fluorinated layer, an anneal is performed to drive at least some of the plurality of fluorine atoms into the gate stack (e.g., into the interfacial layer and the high-K dielectric layer), thereby conformally doping the gate stack with the at least some of the plurality of fluorine atoms.

Abstract: Transparent displays enable many useful applications, including heads-up displays for cars and aircraft as well as displays on eyeglasses and glass windows. Unfortunately, transparent displays made of organic light-emitting diodes are typically expensive and opaque. Heads-up displays often require fixed light sources and have limited viewing angles. And transparent displays that use frequency conversion are typically energy inefficient. Conversely, the present transparent displays operate by scattering visible light from resonant nanoparticles with narrowband scattering cross sections and small absorption cross sections. More specifically, projecting an image onto a transparent screen doped with nanoparticles that selectively scatter light at the image wavelength(s) yields an image on the screen visible to an observer. Because the nanoparticles scatter light at only certain wavelengths, the screen is practically transparent under ambient light.

Abstract: Semiconductor devices and a method for forming the same are provided. In various embodiments, a method for forming a semiconductor device includes receiving a semiconductor substrate including a channel. An atmosphere-modulation layer is formed over the channel. An annealing process is performed to form an interfacial layer between the channel and the atmosphere-modulation layer.

Abstract: An automatic probe construction system and the method thereof are provided. The automatic probe construction system includes a data dereference analysis module, a probe selection module, and a probe verification module. The data dereference analysis module dereferences a plurality of target data of an electronic apparatus according to a plurality of pointers, and constructs a plurality of candidate probes. The probe selection module constructs a control flow graph according to the candidate probes and an instruction code of an executable image file, to select via the control flow graph from the candidate probes at least one dedicated probe. The probe verification module searches the executable image file for an instruction code corresponding to the dedicated probe, to verify the dedicated probe. Therefore, the dedicated probe can be constructed automatically, and the number of the dedicated probes is thus limited.