Abstract: A semiconductor device includes a bottom electrode; a magnetic tunneling junction (MTJ) element over the bottom electrode; a top electrode over the MTJ element; and a sidewall spacer abutting the MTJ element, wherein at least one of the bottom electrode, the top electrode, and the sidewall spacer includes a magnetic material.

Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.

Abstract: Disclosed are techniques for identity verification. In one aspect, the method includes determining whether a user account has the identity data; obtaining from a blockchain the hash value of the identity data signed with the private key if it is determined that the user account has the identity data; using the public key to verify the hash value of the identity data signed with the private key to obtain a decrypted hash value of the identity data; and comparing the decrypted hash value of the identity data with the hash value of the identity data stored in the database to generate an identity verification result.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

Abstract: The present disclosure provides a light-emitting module and a display apparatus thereof. The light-emitting module includes a circuit substrate which includes a first surface and a second surface opposite to the first surface. The first surface includes a plurality of conductive channels, and the second surface includes a plurality of conductive pads. A plurality of light-emitting groups is arranged in a matrix on the first surface. Each of the light-emitting groups includes a red light-emitting diode chip, a green light-emitting diode chip, and a blue light-emitting diode chip. An electric component is disposed on the first surface and located in the light-emitting groups matrix. A translucent encapsulating component covers the plurality of light-emitting groups and the electric component. Wherein, the light-emitting groups matrix comprises m columns and n rows.

Abstract: The present invention provides a voltage control method for controlling a power supply. The voltage control method comprises the following steps: obtaining a present output voltage value associated with a present gain value; obtaining a predetermined output voltage value associated with a predetermined duty ratio; calculating a target gain value, corresponding to the predetermined duty ratio, according to a gain value formula; performing a weight calculation on the present gain value and the target gain value for generating a buffer gain value; and setting an output voltage command according to the buffer gain value. Wherein the buffer gain value is between the present gain value and the target gain value.

Abstract: Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to one embodiment includes first nanostructures, a first gate structure wrapping around each of the first nanostructures and disposed over an isolation structure, and a backside gate contact disposed below the first nanostructures and adjacent to the isolation structure. A bottom surface of the first gate structure is in direct contact with the backside gate contact.

Abstract: The purpose of the present invention is to provide a method for calculating a VC dimension boundary in a quantum circuit, the method comprising: a step in which a computer acquires the depth L of the quantum circuit; a step in which the computer acquires the width n of the quantum circuit; and a step in which the computer identifies the VC dimension boundary in the quantum circuit on the basis of the depth L and the width n.

Abstract: A surgical instrument includes a rod and a push portion. The push portion includes a first end connected to an end of the rod and a second end having a blade portion. The push portion includes a plurality of grooves. The plurality of grooves is recessed in a surface of the push portion and is spaced from each other. Each two adjacent grooves has a rib formed therebetween. A top face of a cross section of each rib is the surface of the push portion. Each rib has a guiding face on the cross section of the push portion. The guiding face is connected to the surface of the push portion. The guiding face faces a rotating direction of the rod. An angle between the guiding face and the surface of the push portion in the cross section is greater than 90°.

Abstract: A removal method applied to an aluminum electrode sheet with an oxide layer, including a soaking step. The soaking step includes soaking the aluminum electrode sheet in an ionic liquid to remove the oxide layer, such that the aluminum electrode sheet has an exposed part of aluminum metal, and the soaking step is performed in a nitrogen atmosphere.

Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: A manufacturing method of an aluminum battery includes: providing an aluminum electrode sheet having an oxide layer; soaking the aluminum electrode sheet in a first ionic liquid in a nitrogen atmosphere to remove the oxide layer, such that the aluminum electrode sheet has an exposed part of aluminum metal; removing the aluminum electrode sheet from the first ionic liquid and used as a negative electrode of the aluminum battery; and providing electrolyte. The exposed part of aluminum metal is in direct contact with the electrolyte.

Abstract: A lighting device includes a driver, a first light string, a second light string, a constant current controller and a pulse width modulation controller. The driver is configured to provide a DC driving current to a shunt node. The first light string is electrically coupled between the shunt node and a ground terminal, and the first light string is driven by a first pulsating direct current. The second light string and the constant current controller are electrically coupled in series between the shunt node and the ground terminal. The pulse width modulation controller is configured to provide a pulse signal to the constant current controller, and the constant current controller controls a pulse frequency of a second pulsating direct current supplied for the second light string according to the pulse signal.

Abstract: A fixed focus lens includes a first lens group with a negative refractive power, an aperture stop, and a second lens group with a positive refractive power arranged in order from a first side to a second side. The first lens group has at least two lenses including at least one aspheric lens. The second lens group includes at least five lenses, the at least five lenses comprising a first compound lens and a second compound lens. A difference between a maximum Abbe number and a minimum Abbe number for all lenses of the first compound lens is greater than 50, and a difference between a maximum Abbe number and a minimum Abbe number for all lenses of the second compound lens is greater than 45.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, and a light-sensing region close to the front surface. The image sensor device includes an insulating layer covering the back surface and extending into the semiconductor substrate. The protection layer has a first refractive index, and the first refractive index is less than a second refractive index of the semiconductor substrate and greater than a third refractive index of the insulating layer, and the protection layer conformally and continuously covers the back surface and extends into the semiconductor substrate. The image sensor device includes a reflective structure surrounded by insulating layer in the semiconductor substrate.

Abstract: An optical imaging system includes five lens elements, the five lens elements being, in order from an object side to an image side: a first lens element having positive refractive power; a second lens element having negative refractive power; a third lens element having positive refractive power; a fourth lens element having positive refractive power; and a fifth lens element having negative refractive power.