Abstract: A method for making a light-emitting device comprises the steps of: providing a growth substrate; forming a first light-emitting semiconductor stack on the growth substrate by epitaxial growth, and the first light-emitting semiconductor stack comprises a first active layer; forming a Distributed Bragg reflector on the first light-emitting semiconductor stack by epitaxial growth; forming a second light-emitting semiconductor stack on the Distributed Bragg reflector by epitaxial growth, and the second light-emitting semiconductor stack comprises a second active layer; and wherein the first active layer emits a first radiation of a first dominant wavelength, and the second active layer emits a second radiation of a second dominant wavelength longer than the first dominant wavelength.

Abstract: This disclosure discloses a method for making a light-emitting device, comprising steps of: providing a substrate; forming a light-emitting stack on the substrate; forming a first layer on the light-emitting stack; providing a permanent substrate; forming a second layer on the permanent substrate; bonding the first layer and the second layer to form a bonding layer to connect the substrate and the permanent substrate; wherein a refractive index of the bonding layer decreases from the light-emitting stack toward the permanent substrate.

Abstract: A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer.

Abstract: A light-emitting structure, comprising a substrate; a first unit and a second unit, separately formed on the substrate; a trench between the first unit and the second unit; and an electrical connection, electrically connecting the first unit and the second unit and comprising a bridging portion and a joining portion extending from the bridging portion, wherein the bridging portion is wider than the joining portion and the bridging portion is configured to cover the trench, and the joining portion is configured to cover first unit and the second unit.

Abstract: An optoelectronic device comprises an optoelectronic system for emitting a light and a semiconductor layer on the optoelectronic system, wherein the semiconductor layer comprises a metal element of Ag and an atomic concentration of Ag in the semiconductor layer is larger than 1*1016 cm?3.

Abstract: An embodiment of the present application discloses a light-emitting structure, comprising a substrate, a first unit and a second unit separately form on the substrate; a trench formed between the first unit and the second unit, and having a bottom portion exposing the substrate, a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection connecting the first unit and the second unit and covering the first unit, the second unit and the less steep sidewall; wherein the sidewalls directly connect to the bottom portion, and the steeper sidewall is devoid of the electrical connection covering.

Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

Abstract: A light-emitting device is disclosed. The light-emitting device comprises a supportive substrate; a first light-emitting element and a second light-emitting element on the supportive substrate, wherein the first light-emitting element comprises a transparent layer on the supportive substrate, a first light-emitting stacked layer on the transparent layer, and a plurality of contact parts between the transparent layer and the first light-emitting stacked layer; and the second light-emitting element comprises an electrode and a second light-emitting stacked layer between the electrode and the supportive substrate; and a metal line on the supportive substrate and electrically connecting the electrode and one of the contact parts.

Abstract: The application is related to an optoelectronic device structure including a stress-balancing layer. The optoelectronic device structure comprises a high thermal conductive substrate, a stress-balancing layer on the high thermal conductive substrate, a reflective layer on the stress-balancing layer and an epitaxial structure on the reflective layer.

Abstract: A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb.

Abstract: A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer.

Abstract: An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.

Abstract: A light-emitting device includes a first semiconductor layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer comprises a first region right under the first pad and a plurality of voids formed in the first region, wherein the region outside the first region in the second semiconductor layer is devoid of voids, and an area of the first region is smaller than that of the first pad in top view and the area of the first pad is smaller than that of the second semiconductor layer in top view, and the light emitted from the active layer is extracted from a top surface of the second semiconductor layer opposite the first semiconductor layer.

Abstract: An encapsulated light-emitting diode device is disclosed. The encapsulated light-emitting diode device includes a circuit carrier including a surface; a light-emitting device including a transparent substrate, the transparent substrate including a first surface and a second surface, and the first surface and the surface of the circuit carrier includes an included angle larger than zero; a light-emitting diode chip located on the first surface of the transparent substrate; and a first transparent glue covering the light-emitting diode chip and formed on the first surface; and a second transparent glue formed on the second surface corresponding to the first transparent glue; wherein the first transparent glue has a circular projection on the first surface and the light-emitting diode chip is substantially located at the center of the circular projection.

Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.

Abstract: A device includes a High-Voltage N-Well (HVNW) region have a first edge, and a High-Voltage P-Well (HVPW) region having a second edge adjoining the first edge. A first Shallow N-well (SHN) region is disposed over a lower portion of the HVNW region, wherein the first SHN region is spaced apart from the first edge by an upper part of the HVNW region. A second SHN region is disposed over a lower portion of the HVPW region, wherein the second SHN region is laterally spaced apart from the second edge. A Shallow P-well (SHP) region is disposed over the lower portion of the HVPW region, and is between the first SHN region and the second SHN region. The SHP region has a p-type impurity concentration higher than a p-type impurity concentration of the HVPW region. An isolation region is disposed over and contacting the SHP region.

Abstract: A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer.

Abstract: A light-emitting element includes a monolithic understructure including a first surface and a second surface different from the first surface; a plurality of light-emitting structure units disposed on the second surface; and a trench formed on a portion of the first surface and between the plurality of light-emitting structure units, wherein a height of the portion of the first surface is greater than a height of the second surface measured from a bottom of the monolithic understructure, and the portion of the first surface is exposed by the trench.