Patents by Inventor Chien-Hao Huang
Chien-Hao Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240162159Abstract: Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Dies of the pair of dies are disposed side by side. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.Type: ApplicationFiled: January 25, 2024Publication date: May 16, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang WANG, Wei-Ting Chen, Chien-Hsun Chen, Shih-Ya Huang
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Publication number: 20240162349Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.Type: ApplicationFiled: January 24, 2024Publication date: May 16, 2024Inventors: Chung-Chiang Wu, Po-Cheng Chen, Kuo-Chan Huang, Hung-Chin Chung, Hsien-Ming Lee, Chien-Hao Chen
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Publication number: 20240148280Abstract: An implantable micro-biosensor a substrate, a first electrode, a second electrode, a third electrode, and a chemical reagent layer. The first electrode is disposed on the substrate and used as a counter electrode. The second electrode is disposed on the substrate and spaced apart from the first electrode. The third electrode is disposed on the substrate and used as a working electrode. The chemical reagent layer at least covers a sensing section of the third electrode so as to permit the third electrode to selectively cooperate with the first electrode or the first and second electrodes to measure a physiological signal in response to the physiological parameter of the analyte.Type: ApplicationFiled: January 16, 2024Publication date: May 9, 2024Inventors: Chun-Mu Huang, Chieh-Hsing Chen, Heng-Chia Chang, Chi-Hao Chen, Chien-Chung Chen
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Patent number: 11974842Abstract: An implantable micro-biosensor a substrate, a first electrode, a second electrode, a third electrode, and a chemical reagent layer. The first electrode is disposed on the substrate and used as a counter electrode. The second electrode is disposed on the substrate and spaced apart from the first electrode. The third electrode is disposed on the substrate and used as a working electrode. The chemical reagent layer at least covers a sensing section of the third electrode so as to permit the third electrode to selectively cooperate with the first electrode or the first and second electrodes to measure a physiological signal in response to the physiological parameter of the analyte.Type: GrantFiled: July 31, 2020Date of Patent: May 7, 2024Assignee: Bionime CorporationInventors: Chun-Mu Huang, Chieh-Hsing Chen, Heng-Chia Chang, Chi-Hao Chen, Chien-Chung Chen
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Patent number: 11978740Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.Type: GrantFiled: February 17, 2022Date of Patent: May 7, 2024Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Harry-Hak-Lay Chuang, Kuo-Ching Huang, Wei-Cheng Wu, Hsin Fu Lin, Henry Wang, Chien Hung Liu, Tsung-Hao Yeh, Hsien Jung Chen
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Publication number: 20240146864Abstract: A landmark identification and marking system for a panoramic image is provided. The system includes a storage device and a back-end processor. The storage device stores an initial panoramic image, attitude information, motion tracking information, and a landmark list. The back-end processor performs steps of: adjusting a visual angle of the initial panoramic image to a designated angle according to a difference value between the visual angle and the designated angle; providing the adjusted initial panoramic image to a front-end processor for calculating and generating a panoramic image integrated with landmark objects in the virtual space.Type: ApplicationFiled: November 18, 2022Publication date: May 2, 2024Applicant: INSTITUTE FOR INFORMATION INDUSTRYInventors: Jia-Hao WANG, Zhi-Ying CHEN, Hsun-Hui HUANG, Chien-Der LIN
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Publication number: 20240119843Abstract: A ship navigation display system is set in a ship and includes a communications device, sensing device, first computing device, second computing device and wearable device. The communications device receives first coordinate information corresponding to a ship. The sensing device senses second coordinate information corresponding to a first ship around the ship. The first computing device is communicably connected with the communications device and calculates a collision probability according to the first and second coordinate information. When the collision probability is greater than a threshold value, the first computing device transmits a collision prediction signal. The second computing device receives the collision prediction signal and projects the second coordinate information corresponding to the first ship to a virtual coordinate in a virtual space.Type: ApplicationFiled: November 11, 2022Publication date: April 11, 2024Inventors: Jia Hao Wang, Zhi Ying Chen, Hsun Hui Huang, Chien Der Lin
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Publication number: 20240105644Abstract: A semiconductor die package includes a high dielectric constant (high-k) dielectric layer over a device region of a first semiconductor die that is bonded with a second semiconductor die in a wafer on wafer (WoW) configuration. A through silicon via (TSV) structure may be formed through the device region. The high-k dielectric layer has an intrinsic negative charge polarity that provides a coupling voltage to modify the electric potential in the device region. In particular, the electron carriers in high-k dielectric layer attracts hole charge carriers in device region, which suppresses trap-assist tunnels that result from surface defects formed during etching of the recess for the TSV structure. Accordingly, the high-k dielectric layer described herein reduces the likelihood of (and/or the magnitude of) current leakage in semiconductor devices that are included in the device region of the first semiconductor die.Type: ApplicationFiled: January 6, 2023Publication date: March 28, 2024Inventors: Tsung-Hao YEH, Chien Hung LIU, Hsien Jung CHEN, Hsin Heng WANG, Kuo-Ching HUANG
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Patent number: 11940659Abstract: An optical integrated circuit (IC) structure includes: a substrate including a fiber slot formed in an upper surface of the substrate and extending from an edge of the substrate, and an undercut formed in the upper surface and extending from the fiber slot; a semiconductor layer disposed on the substrate; a dielectric structure disposed on the semiconductor layer; an interconnect structure disposed in the dielectric structure; a plurality of vents that extend through a coupling region of the dielectric structure and expose the undercut; a fiber cavity that extends through the coupling region of dielectric structure and exposes the fiber slot; and a barrier ring disposed in the dielectric structure, the barrier ring surrounding the interconnect structure and routed around the perimeter of the coupling region.Type: GrantFiled: August 30, 2021Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chen-Hao Huang, Hau-Yan Lu, Sui-Ying Hsu, Yuehying Lee, Chien-Ying Wu, Chia-Ping Lai
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Publication number: 20240094774Abstract: A foldable electronic apparatus is provided and includes a base unit and a display unit. The display unit includes a main panel body having a first side and a bottom side substantially perpendicular to each other, and the bottom side is connected to the base unit; a first folding module disposed on the first side; a first side panel body disposed on the first folding module, and the first side panel body is able to transform between a first unfolded state and a first folded state relative to the main panel body with the first folding module as an axis; and a flexible screen disposed on the main panel body, the first folding module and the first side panel body, and the flexible screen includes a first bendable area corresponding to the first folding module.Type: ApplicationFiled: August 22, 2023Publication date: March 21, 2024Applicant: SYNCMOLD ENTERPRISE CORP.Inventors: Ching-Hui YEN, Chun-Hao HUANG, Chien-Cheng YEH
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Publication number: 20240088182Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Chien Yu, Ting-Cheng Chang, Wen-Hau Wu, Chih-Kung Chang
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Publication number: 20240079497Abstract: Provided are a transistor structure and a method of forming the same. The transistor structure includes a gate electrode; a gate dielectric layer, disposed on the gate electrode; an active layer, disposed on the gate dielectric layer; a pair of source/drain (S/D) features, disposed on the active layer; and an isolation structure, laterally surrounding the pair of S/D features, wherein the isolation structure at least comprises a blocking layer and an upper dielectric layer on the blocking layer.Type: ApplicationFiled: September 1, 2022Publication date: March 7, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Hao Huang, Gao-Ming Wu, Katherine H CHIANG, Chung-Te Lin
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Publication number: 20240080382Abstract: A foldable electronic device is provided and includes a central base, a torque module, two wing members, two transmission members, two panel bodies, two connecting rods, two drop plates, a synchronous module and a flexible screen. The torque module is disposed on the central base, the wing members pivot relative to the central base, the transmission members are pivotally connected to the torque module and the central base, the panel bodies pivot relative to the wing members and linearly slide relative to the transmission members, the connecting rods pivot relative to the wing members, the drop plates pivot relative to the panel bodies and the connecting rods, the synchronous module drives the transmission members to reverse synchronously, and the flexible screen is arranged on the panel bodies, the drop plates and the wing members and includes a bendable area.Type: ApplicationFiled: April 25, 2023Publication date: March 7, 2024Applicant: SYNCMOLD ENTERPRISE CORP.Inventors: Chun-Hao Huang, Chien-Cheng Yeh
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Publication number: 20240081005Abstract: A flexible screen comprises a multi-layer display structure and a covering structure. The multi-layer display structure includes an outer surface and an inner surface opposite to the outer surface, and the inner surface faces towards the foldable electronic device. The covering structure is disposed on the outer surface of the multi-layer display structure and includes a substrate layer and a plurality of nano-protrusions. The nano-protrusions are formed in array on at least one side of the substrate layer. The flexible screen can transform between an unfolded state and a folded state, and a bending section is partially formed when the flexible screen is in the folded state. The nano-protrusions located in the bending section can release the stress generated in the bending section when the flexible screen transform between the unfolded state and the folded state.Type: ApplicationFiled: May 30, 2023Publication date: March 7, 2024Inventors: Chun-Hao HUANG, Ching-Hui YEN, Chien-Cheng YEH
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Patent number: 11923315Abstract: Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Dies of the pair of dies are disposed side by side. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.Type: GrantFiled: July 12, 2021Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang Wang, Wei-Ting Chen, Chien-Hsun Chen, Shih-Ya Huang
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Patent number: 11916146Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.Type: GrantFiled: April 11, 2022Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Chiang Wu, Po-Cheng Chen, Kuo-Chan Huang, Hung-Chin Chung, Hsien-Ming Lee, Chien-Hao Chen
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Patent number: 11848332Abstract: A semiconductor die includes a semiconductor substrate and a transistor array disposed over the semiconductor substrate. The transistor array includes unit cells and spacers. The unit cells are disposed along rows of the transistor array extending in a first direction and columns of the transistor array extending in a second direction perpendicular to the first direction. The spacers encircle the unit cells. The unit cells include source contacts and drain contacts separated by interlayer dielectric material portions. First sections of the spacers contacting the interlayer dielectric material portions are thicker than second sections of the spacers contacting the source contacts and the drain contacts.Type: GrantFiled: July 23, 2021Date of Patent: December 19, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Gao-Ming Wu, Katherine H. Chiang, Chien-Hao Huang, Chung-Te Lin
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Publication number: 20230377670Abstract: A method of testing a non-volatile memory (NVM) array includes heating the NVM array to a target temperature, and while the NVM array is heated to the target temperature, programming a subset of the NVM cells to first resistance levels and obtaining a first current distribution, programming the subset of NVM cells to second resistance levels and obtaining a second current distribution, calculating a current threshold level from the first and second current distributions, and for each of the NVM cells, programing the NVM cell to one of the first or second resistance levels, and using the current threshold level to determine a first pass/fail (P/F) status and a second P/F status at the programmed resistance level. A bit error rate (BER) of the NVM array is calculated based on the first and second current distributions and the first and second P/F status of each of the NVM cells.Type: ApplicationFiled: July 25, 2023Publication date: November 23, 2023Inventors: Chien-Hao HUANG, Katherine H. CHIANG, Cheng-Yi WU, Chung-Te LIN
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Patent number: 11776647Abstract: A semiconductor device is provided, which contains a memory bank including M primary word lines and R replacement word lines, a row/column decoder, and an array of redundancy fuse elements. A sorted primary failed bit count list is generated in a descending order for the bit fail counts per word line. A sorted replacement failed bit count list is generated in an ascending order of the M primary word lines in an ascending order. The primary word lines are replaced with the replacement word lines from top to bottom on the lists until a primary failed bit count equals a replacement failed bit count or until all of the replacement word lines are used up. Optionally, the sorted primary failed bit count list may be re-sorted in an ascending or descending order of the word line address prior to the replacement process.Type: GrantFiled: November 7, 2022Date of Patent: October 3, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chien-Hao Huang, Cheng-Yi Wu, Katherine H. Chiang, Chung-Te Lin
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Publication number: 20230307351Abstract: A three-dimensional integrated structure and the manufacturing method(s) thereof are described. The three-dimensional integrated structure includes a substrate having conductive features therein, and a component array disposed over the substrate and on the conductive features. The component array includes a metallic material layer and capacitor structures separated by the metallic material layer. Each of the capacitor structures includes a first metallic pillar, a first dielectric sheath surrounding the first metallic pillar, a second metallic sheath surrounding the first dielectric sheath, and a second dielectric sleeve surrounding the second metallic sheath. The metallic material layer laterally encapsulates the capacitor structures.Type: ApplicationFiled: March 25, 2022Publication date: September 28, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yun-Feng Kao, Chien-Hao Huang, Gao-Ming Wu, Katherine H CHIANG