Abstract: An electronic element soldering method includes providing a substrate, wherein the substrate has a to-be-soldered position, placing an electronic device including an electronic element, a heating element, and a parallel-connected circuit on the to-be-soldered position of the substrate, adding a solder between the electronic element of the electronic device and the to-be-soldered position of the substrate, applying a heating current into the parallel-connected circuit of the electronic device to allow the heating element of the parallel-connected circuit to generate a thermal energy for melting the solder, thereby securing the electronic element on the to-be-soldered position of the substrate via the solder that is melted, applying a breaking current that is larger than the heating current into the parallel-connected circuit to allow an open to occur in a parallel branch corresponding to the heating element of the parallel-connected circuit, and stopping the breaking current.

Abstract: A method for transferring chips and a method for manufacturing an LED display are introduced. The method for manufacturing the LED display includes the method for transferring chips. The method for transferring chips includes providing a carrier substrate on which multiple LED chips are carried; providing a target substrate on which wires capable of forming circuits with the LED chips are disposed; transferring the LED chips carried on the carrier substrate onto the wires; galvanizing the wires to trigger at least partial of the LED chips to generate light by the circuits formed; checking the LED chips forming the circuit and fixing the LED chips generating light on the wire; and removing LED chips which fail to generate light.

Abstract: A sintered machinable glass-ceramic is provided. The machinable glass-ceramic is formed by mixing phyllosilicate material having a sheet structure, with a glass fit and firing the mixture at relatively low temperatures to sinter the phyllosilicate, while maintaining the sheet-like morphology of the phyllosilicate and its associated cleaving properties. The sintered machinable glass-ceramic can be machined with conventional metal working tools and includes the electrical properties of the phyllosilicate. Producing the sintered machinable glass-ceramic does not require the relatively high-temperature bulk nucleation and crystallization needed to form sheet phyllosilicate phases in situ.

Abstract: A light-emitting chip carrying structure and a method of manufacturing the same are provided. The method includes transferring a plurality of light-emitting chips to a circuit substrate; driving a leveling substrate to concurrently press the light-emitting chip by a carrier device such that a plurality of distances each defined between a light-emitting surface of each of the light-emitting chips and a top surface of the circuit substrate are the same; fixing the light-emitting chips on the circuit substrate by a heating device while the light-emitting chips are pressed by the leveling substrate; and then removing the leveling substrate by the carrier device. Therefore, the light-emitting surfaces of the light-emitting chips relative to the top surface of the circuit substrate have the same flatness, and the light-emitting surfaces of the light-emitting chips are disposed on the same plane.

Abstract: A computer device, a server device, and a method for controlling a hybrid memory unit thereof are provided. The control method includes: executing, by a processing unit, an operating system (OS) in a working mode of the computer device; triggering, by a soft off control signal or a soft reset control signal when the processing unit executes the OS, the processing unit to enter an interrupt processing mode; executing, by the processing unit, basic input/output system (BIOS) program code in the interrupt processing mode; and controlling, by the processing unit by using the BIOS program code, to store data from a volatile memory into a non-volatile memory corresponding to the volatile memory.

Abstract: A cleaning apparatus and a method for removing residue from a chip-stacked structure are provided. The cleaning apparatus includes: a platform for placing thereon the chip-stacked structure and a two-fluid nozzle movable relative to the platform to reach a position in alignment with an interval between two adjacent chips, where the two-fluid nozzle is configured to apply a gas-liquid mixture including a chemical liquid and a gas to the chip-stacked structure. The chemical liquid of the gas-liquid mixture separates the residue in a gap from a its attached surface, and an impact force exerted by the gas of the gas-liquid mixture causes the residue to be carried out of the gap.

Abstract: A method for fabricating a semiconductor device is disclosed. A semiconductor substrate comprising a MOS transistor is provided. A MEMS device is formed over the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

Abstract: A method for fabricating a semiconductor device is disclosed. A semiconductor substrate comprising a MOS transistor is provided. A MEMS device is formed over the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

Abstract: A cleaning apparatus for removing residues from a chip stacked structure includes a platform on which the chip stacked structure is placed. A liquid supply device is for applying a cleaning liquid to the chip stacked structure to flow into a gap between chips and a substrate from a first side of the gap. A liquid suction device has a flexible skirt for engaging with the chips and is for providing a negative pressure to extract the cleaning liquid located in the gap through a second side of the gap, thereby bringing out the residues. A precise driving device is connected with the liquid suction device and has a vertical lifting mechanism for controlling the liquid suction device to move along a vertical direction, and a horizontal moving mechanism for controlling the liquid suction device to move along a horizontal direction.

Abstract: A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

Abstract: A computer device, a server device, and a method for controlling a hybrid memory unit thereof are provided. The control method includes: executing, by a processing unit, an operating system (OS) in a working mode of the computer device; triggering, by a soft off control signal or a soft reset control signal when the processing unit executes the OS, the processing unit to enter an interrupt processing mode; executing, by the processing unit, basic input/output system (BIOS) program code in the interrupt processing mode; and controlling, by the processing unit by using the BIOS program code, to store data from a volatile memory into a non-volatile memory corresponding to the volatile memory.

Abstract: A sintered machinable glass-ceramic is provided. The machinable glass-ceramic is formed by mixing phyllosilicate material having a sheet structure, with a glass fit and firing the mixture at relatively low temperatures to sinter the phyllosilicate, while maintaining the sheet-like morphology of the phyllosilicate and its associated cleaving properties. The sintered machinable glass-ceramic can be machined with conventional metal working tools and includes the electrical properties of the phyllosilicate. Producing the sintered machinable glass-ceramic does not require the relatively high-temperature bulk nucleation and crystallization needed to form sheet phyllosilicate phases in situ.

Abstract: A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

Abstract: A pixel structure includes a first patterned transparent conductive layer, an active layer, an insulating layer and a second patterned transparent conductive layer. The first patterned transparent conductive layer is disposed on a substrate and includes a source, a drain and a pixel electrode connected to the drain. The active layer connects the source and the drain. The insulating layer covers the source, the drain and the active layer. The second patterned transparent conductive layer is disposed on the insulating layer and includes a gate disposed above the active layer and a common electrode disposed above the pixel electrode. A fabrication method of a pixel structure is also provided.

Abstract: A manufacturing method for a display module is provided. The method comprises following steps. A module structure comprising a cover plate, a substrate, and a front plate disposed between the cover plate and the substrate is provided. A space is defined by a lower surface of the cover plate, an upper surface of the substrate, and a side surface of the front plate. A holding structure comprising a holding layer disposed under the module structure is provided. A sealant is filled into the space. Portions of the package layer and the holding structure disposed outside a side surface of the cover plate and a side surface of the substrate are removed.

Abstract: A gas barrier substrate including a flexible base material, at least one first inorganic gas barrier layer and at least one second inorganic gas barrier layer is provided. The flexible base material has an upper surface. The first inorganic gas barrier layer is disposed on the flexible base material and covers the upper surface. The second inorganic gas barrier layer is disposed on the first inorganic gas barrier layer and covers the first inorganic gas barrier layer. A water vapor and oxygen transmission rate of the second inorganic gas barrier layer is lower than that of the first inorganic gas barrier layer.

Abstract: A pixel structure and a manufacturing method of the pixel structure are provided. The pixel structure includes a substrate, a transistor, a planarizing layer, a plurality of contact windows, and a pixel electrode layer. The transistor is disposed on the substrate and includes a gate, a source, and a drain. The planarizing layer is disposed on the gate, the source, and a portion of the drain. The contact windows penetrate the planarizing layer and expose another portion of the drain. The pixel electrode layer is disposed on the planarizing layer, on the another portion of the drain, and in the contact windows and is electrically connected to the drain.

Abstract: A pixel structure includes a flexible substrate, an active device, a conductive pattern, a first insulation layer, and a pixel electrode. The active device is disposed on the flexible substrate and includes a gate, a channel, a source, and a drain. The source and the drain are connected to the channel and are separated from each other. The channel and the gate are stacked in a thickness direction. The active device is disposed between the conductive pattern and the flexible substrate. The conductive pattern is electrically connected to the drain of the active device. The first insulation layer covers the conductive pattern and has first contact holes separated from one another, and the first contact holes expose the conductive pattern. The first insulation layer is disposed between the pixel electrode and the conductive pattern. The pixel electrode is electrically connected to the conductive pattern through the first contact holes.

Abstract: A manufacturing method for a display module is provided. The method comprises following steps. A module structure comprising a cover plate, a substrate, and a front plate disposed between the cover plate and the substrate is provided. A space is defined by a lower surface of the cover plate, an upper surface of the substrate, and a side surface of the front plate. A holding structure comprising a holding layer disposed under the module structure is provided. A sealant is filled into the space. Portions of the package layer and the holding structure disposed outside a side surface of the cover plate and a side surface of the substrate are removed.

Abstract: A manufacturing method for a flexible display apparatus is provided. A rigid substrate is provided. A flexible substrate having a supporting portion and a cutting portion surrounding the supporting portion is provided. A first adhesive material is formed between the rigid substrate and the cutting portion of the flexible substrate, so that the flexible substrate is adhered onto the rigid substrate by the first adhesive material. The first adhesive material does not locate on the supporting portion of the flexible substrate. At least a display unit is formed on the supporting portion of the flexible substrate. The supporting portion and the cutting portion of the flexible substrate are separated so as to separate the rigid substrate and the flexible substrate, wherein the flexible substrate and the display unit thereon form a flexible display apparatus. In the method, the flexible substrate and the rigid substrate can be easily separated.