Abstract: A sintered machinable glass-ceramic is provided. The machinable glass-ceramic is formed by mixing phyllosilicate material having a sheet structure, with a glass fit and firing the mixture at relatively low temperatures to sinter the phyllosilicate, while maintaining the sheet-like morphology of the phyllosilicate and its associated cleaving properties. The sintered machinable glass-ceramic can be machined with conventional metal working tools and includes the electrical properties of the phyllosilicate. Producing the sintered machinable glass-ceramic does not require the relatively high-temperature bulk nucleation and crystallization needed to form sheet phyllosilicate phases in situ.

Abstract: A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

Abstract: A pixel structure includes a first patterned transparent conductive layer, an active layer, an insulating layer and a second patterned transparent conductive layer. The first patterned transparent conductive layer is disposed on a substrate and includes a source, a drain and a pixel electrode connected to the drain. The active layer connects the source and the drain. The insulating layer covers the source, the drain and the active layer. The second patterned transparent conductive layer is disposed on the insulating layer and includes a gate disposed above the active layer and a common electrode disposed above the pixel electrode. A fabrication method of a pixel structure is also provided.

Abstract: A manufacturing method for a display module is provided. The method comprises following steps. A module structure comprising a cover plate, a substrate, and a front plate disposed between the cover plate and the substrate is provided. A space is defined by a lower surface of the cover plate, an upper surface of the substrate, and a side surface of the front plate. A holding structure comprising a holding layer disposed under the module structure is provided. A sealant is filled into the space. Portions of the package layer and the holding structure disposed outside a side surface of the cover plate and a side surface of the substrate are removed.

Abstract: A gas barrier substrate including a flexible base material, at least one first inorganic gas barrier layer and at least one second inorganic gas barrier layer is provided. The flexible base material has an upper surface. The first inorganic gas barrier layer is disposed on the flexible base material and covers the upper surface. The second inorganic gas barrier layer is disposed on the first inorganic gas barrier layer and covers the first inorganic gas barrier layer. A water vapor and oxygen transmission rate of the second inorganic gas barrier layer is lower than that of the first inorganic gas barrier layer.

Abstract: A pixel structure and a manufacturing method of the pixel structure are provided. The pixel structure includes a substrate, a transistor, a planarizing layer, a plurality of contact windows, and a pixel electrode layer. The transistor is disposed on the substrate and includes a gate, a source, and a drain. The planarizing layer is disposed on the gate, the source, and a portion of the drain. The contact windows penetrate the planarizing layer and expose another portion of the drain. The pixel electrode layer is disposed on the planarizing layer, on the another portion of the drain, and in the contact windows and is electrically connected to the drain.

Abstract: A pixel structure includes a flexible substrate, an active device, a conductive pattern, a first insulation layer, and a pixel electrode. The active device is disposed on the flexible substrate and includes a gate, a channel, a source, and a drain. The source and the drain are connected to the channel and are separated from each other. The channel and the gate are stacked in a thickness direction. The active device is disposed between the conductive pattern and the flexible substrate. The conductive pattern is electrically connected to the drain of the active device. The first insulation layer covers the conductive pattern and has first contact holes separated from one another, and the first contact holes expose the conductive pattern. The first insulation layer is disposed between the pixel electrode and the conductive pattern. The pixel electrode is electrically connected to the conductive pattern through the first contact holes.

Abstract: A manufacturing method for a display module is provided. The method comprises following steps. A module structure comprising a cover plate, a substrate, and a front plate disposed between the cover plate and the substrate is provided. A space is defined by a lower surface of the cover plate, an upper surface of the substrate, and a side surface of the front plate. A holding structure comprising a holding layer disposed under the module structure is provided. A sealant is filled into the space. Portions of the package layer and the holding structure disposed outside a side surface of the cover plate and a side surface of the substrate are removed.

Abstract: A manufacturing method for a flexible display apparatus is provided. A rigid substrate is provided. A flexible substrate having a supporting portion and a cutting portion surrounding the supporting portion is provided. A first adhesive material is formed between the rigid substrate and the cutting portion of the flexible substrate, so that the flexible substrate is adhered onto the rigid substrate by the first adhesive material. The first adhesive material does not locate on the supporting portion of the flexible substrate. At least a display unit is formed on the supporting portion of the flexible substrate. The supporting portion and the cutting portion of the flexible substrate are separated so as to separate the rigid substrate and the flexible substrate, wherein the flexible substrate and the display unit thereon form a flexible display apparatus. In the method, the flexible substrate and the rigid substrate can be easily separated.

Abstract: A pixel structure including a flexible substrate, an active device, a pixel electrode, a capacitance electrode, a first insulation layer, a second insulation layer, and a padding layer is provided. The pixel electrode is electrically connected to the active device and has pixel electrode openings. The capacitance electrode is disposed overlapping the pixel electrode and has capacitance electrode openings corresponding to the pixel electrode openings. The first insulation layer is disposed between the pixel electrode and the flexible substrate. The second insulation layer is disposed between the pixel electrode and the capacitance electrode. The active device is disposed between the second insulation layer and the flexible substrate. The padding layer includes padding pillars and a padding pattern covering over the active device. The padding pillars are located in the pixel electrode openings respectively. The pixel electrode partially covers the padding pattern and exposes the padding pillars.

Abstract: A pixel structure includes a flexible substrate, an active device, a conductive pattern, a first insulation layer, and a pixel electrode. The active device is disposed on the flexible substrate and includes a gate, a channel, a source, and a drain. The source and the drain are connected to the channel and are separated from each other. The channel and the gate are stacked in a thickness direction. The active device is disposed between the conductive pattern and the flexible substrate. The conductive pattern is electrically connected to the drain of the active device. The first insulation layer covers the conductive pattern and has first contact holes separated from one another, and the first contact holes expose the conductive pattern. The first insulation layer is disposed between the pixel electrode and the conductive pattern. The pixel electrode is electrically connected to the conductive pattern through the first contact holes.

Abstract: A pixel structure including a flexible substrate, an active device, a pixel electrode, a capacitance electrode, a first insulation layer, a second insulation layer, and a padding layer is provided. The pixel electrode is electrically connected to the active device and has pixel electrode openings. The capacitance electrode is disposed overlapping the pixel electrode and has capacitance electrode openings corresponding to the pixel electrode openings. The first insulation layer is disposed between the pixel electrode and the flexible substrate. The second insulation layer is disposed between the pixel electrode and the capacitance electrode. The active device is disposed between the second insulation layer and the flexible substrate. The padding layer includes padding pillars and a padding pattern covering over the active device. The padding pillars are located in the pixel electrode openings respectively. The pixel electrode partially covers the padding pattern and exposes the padding pillars.

Abstract: A surface treatment method for a flexible substrate is provided. A flexible insulation substrate is provided. A surface of the flexible insulation substrate has at least one defect. A plasma etching is performed on the flexible insulation substrate to smooth a profile of the defect.

Abstract: A gas barrier substrate including a flexible base material, at least one first inorganic gas barrier layer and at least one second inorganic gas barrier layer is provided. The flexible base material has an upper surface. The first inorganic gas barrier layer is disposed on the flexible base material and covers the upper surface. The second inorganic gas barrier layer is disposed on the first inorganic gas barrier layer and covers the first inorganic gas barrier layer. A water vapor and oxygen transmission rate of the second inorganic gas barrier layer is lower than that of the first inorganic gas barrier layer.

Abstract: A pixel structure includes a first patterned transparent conductive layer, an active layer, an insulating layer and a second patterned transparent conductive layer. The first patterned transparent conductive layer is disposed on a substrate and includes a source, a drain and a pixel electrode connected to the drain. The active layer connects the source and the drain. The insulating layer covers the source, the drain and the active layer. The second patterned transparent conductive layer is disposed on the insulating layer and includes a gate disposed above the active layer and a common electrode disposed above the pixel electrode. A fabrication method of a pixel structure is also provided.

Abstract: A pixel structure and a manufacturing method of the pixel structure are provided. The pixel structure includes a substrate, a transistor, a planarizing layer, a plurality of contact windows, and a pixel electrode layer. The transistor is disposed on the substrate and includes a gate, a source, and a drain. The planarizing layer is disposed on the gate, the source, and a portion of the drain. The contact windows penetrate the planarizing layer and expose another portion of the drain. The pixel electrode layer is disposed on the planarizing layer, on the another portion of the drain, and in the contact windows and is electrically connected to the drain.

Abstract: A manufacturing method for a flexible display apparatus is provided. A rigid substrate is provided. A flexible substrate having a supporting portion and a cutting portion surrounding the supporting portion is provided. A first adhesive material is formed between the rigid substrate and the cutting portion of the flexible substrate, so that the flexible substrate is adhered onto the rigid substrate by the first adhesive material. The first adhesive material does not locate on the supporting portion of the flexible substrate. At least a display unit is formed on the supporting portion of the flexible substrate. The supporting portion and the cutting portion of the flexible substrate are separated so as to separate the rigid substrate and the flexible substrate, wherein the flexible substrate and the display unit thereon form a flexible display apparatus. In the method, the flexible substrate and the rigid substrate can be easily separated.

Abstract: A process for treating nitrogenous wastewater contains an autotrophic denitrification reaction, a heterotrophic denitrification reaction and a COD removal reaction simultaneously and mixedly taking place in a single reactor. The nitrification reaction is caused by nitrifying bacteria, in which ammonium is oxidized into nitrite. The autotrophic denitrification reaction is caused by autotrophic denitrifying bacteria, in which ammonium used as electron donor and nitrite used as electron acceptor are converted into nitrogen gas and nitrate. The heterotrophic denitrification reaction is caused by heterotrophic denitrifying bacteria, in which nitrate and COD are consumed. It is not necessary to build two separate reactors for aerobic nitrification and anaerobic denitrification, thereby effectively reducing the fabrication and operation cost.

Abstract: A 12-bit DAC includes a resistor string, three 16-to-1 selectors and an adder. The 12-bit DAC receives a 12-bit digital input data and provides a corresponding analog output voltage with 3-segmented conversion. The resistor string includes a plurality of voltage-dividing units for providing a plurality of reference voltages corresponding to each segment of conversion. After receiving the plurality of reference voltages generated by the resistor string, the three 16-to-1 selectors output 3 reference voltages corresponding to the three segments of conversion according to the 4 most significant bits, 4 least significant bits and the other 4 bits in the 12-bit digital input data, respectively. The adder can then generate the corresponding output analog voltage by summing the 3 reference voltages.

Abstract: A process for treating nitrogenous wastewater contains an autotrophic denitrification reaction, a heterotrophic denitrification reaction and a COD removal reaction simultaneously and mixedly taking place in a single reactor. The nitrification reaction is caused by nitrifying bacteria, in which ammonium is oxidized into nitrite. The autotrophic denitrification reaction is caused by autotrophic denitrifying bacteria, in which ammonium used as electron donor and nitrite used as electron acceptor are converted into nitrogen gas and nitrate. The heterotrophic denitrification reaction is caused by heterotrophic denitrifying bacteria, in which nitrate and COD are consumed. It is not necessary to build two separate reactors for aerobic nitrification and anaerobic denitrification, thereby effectively reducing the fabrication and operation cost.