Patents by Inventor Chih-Chien Wang
Chih-Chien Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10546889Abstract: Implementations of the disclosure provide a method of fabricating an image sensor device. The method includes forming first trenches in a first photoresist layer using a first photomask having a first pattern to expose a first surface of a substrate, directing ions into the exposed first substrate through the first trenches to form first isolation regions in the substrate, removing the first photoresist layer, forming second trenches in a second photoresist layer using a second photomask having a second pattern to expose a second surface of the substrate, the second pattern being shifted diagonally from the first pattern by half mask pitch, directing ions into the exposed second surface through the second trenches to form second isolation regions in the substrate, the first and second isolation regions being alternatingly disposed in the substrate, and the first and second isolation regions defining pixel regions therebetween, and removing the second photoresist layer.Type: GrantFiled: November 5, 2018Date of Patent: January 28, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Chao Chiu, Chih-Chien Wang, Feng-Jia Shiu, Ching-Sen Kuo, Chun-Wei Chang, Kai Tzeng
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Publication number: 20190088694Abstract: Implementations of the disclosure provide a method of fabricating an image sensor device. The method includes forming first trenches in a first photoresist layer using a first photomask having a first pattern to expose a first surface of a substrate, directing ions into the exposed first substrate through the first trenches to form first isolation regions in the substrate, removing the first photoresist layer, forming second trenches in a second photoresist layer using a second photomask having a second pattern to expose a second surface of the substrate, the second pattern being shifted diagonally from the first pattern by half mask pitch, directing ions into the exposed second surface through the second trenches to form second isolation regions in the substrate, the first and second isolation regions being alternatingly disposed in the substrate, and the first and second isolation regions defining pixel regions therebetween, and removing the second photoresist layer.Type: ApplicationFiled: November 5, 2018Publication date: March 21, 2019Inventors: Wei-Chao CHIU, Chih-Chien WANG, Feng-Jia SHIU, Ching-Sen KUO, Chun-Wei CHANG, Kai TZENG
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Publication number: 20190027519Abstract: Various examples of a technique for forming a pattern for substrate fabrication are disclosed herein. In an example, a method includes receiving a substrate. A patterned resist is formed on the substrate and has a trench defined therein. A dielectric is deposited on the patterned resist and within the trench such that the dielectric narrows a width of the trench to further define the trench. A fabrication process is performed on a region of the substrate underlying the trench defined by the dielectric.Type: ApplicationFiled: July 18, 2017Publication date: January 24, 2019Inventors: Wei-Chao Chiu, Kai Tzeng, Chih-Chien Wang, Chun-Wei Chang, Ching-Sen Kuo, Feng-Jia Shiu, Cheng-Ta Wu
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Publication number: 20190027530Abstract: A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.Type: ApplicationFiled: September 26, 2018Publication date: January 24, 2019Inventors: Wei-Chao Chiu, Chih-Chien Wang, Feng-Jia Shiu, Ching-Sen Kuo, Chun-Wei Chang, Kai Tzeng
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Patent number: 10186542Abstract: Various examples of a technique for forming a pattern for substrate fabrication are disclosed herein. In an example, a method includes receiving a substrate. A patterned resist is formed on the substrate and has a trench defined therein. A dielectric is deposited on the patterned resist and within the trench such that the dielectric narrows a width of the trench to further define the trench. A fabrication process is performed on a region of the substrate underlying the trench defined by the dielectric.Type: GrantFiled: July 18, 2017Date of Patent: January 22, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Chao Chiu, Kai Tzeng, Chih-Chien Wang, Chun-Wei Chang, Ching-Sen Kuo, Feng-Jia Shiu, Cheng-Ta Wu
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Patent number: 10121811Abstract: Implementations of the disclosure provide a method of fabricating an image sensor device. The method includes forming first trenches in a first photoresist layer using a first photomask having a first pattern to expose a first surface of a substrate, directing ions into the exposed first substrate through the first trenches to form first isolation regions in the substrate, removing the first photoresist layer, forming second trenches in a second photoresist layer using a second photomask having a second pattern to expose a second surface of the substrate, the second pattern being shifted diagonally from the first pattern by half mask pitch, directing ions into the exposed second surface through the second trenches to form second isolation regions in the substrate, the first and second isolation regions being alternatingly disposed in the substrate, and the first and second isolation regions defining pixel regions therebetween, and removing the second photoresist layer.Type: GrantFiled: August 25, 2017Date of Patent: November 6, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Chao Chiu, Chih-Chien Wang, Feng-Jia Shiu, Ching-Sen Kuo, Chun-Wei Chang, Kai Tzeng
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Patent number: 10090357Abstract: A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.Type: GrantFiled: March 7, 2016Date of Patent: October 2, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Chao Chiu, Chih-Chien Wang, Feng-Jia Shiu, Ching-Sen Kuo, Chun-Wei Chang, Kai Tzeng
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Patent number: 9875892Abstract: A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.Type: GrantFiled: May 8, 2015Date of Patent: January 23, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Wei Chang, Chih-Chien Wang, Wang-Pen Mo, Hung-Chang Hsieh
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Patent number: 9791775Abstract: A method includes forming a first photo resist layer over a base structure and a target feature over the base structure, performing an un-patterned exposure on the first photo resist layer, and developing the first photo resist layer. After the step of developing, a corner portion of the first photo resist layer remains at a corner between a top surface of the base structure and an edge of the target feature. A second photo resist layer is formed over the target feature, the base structure, and the corner portion of the first photo resist layer. The second photo resist layer is exposed using a patterned lithography mask. The second photo resist layer is patterned to form a patterned photo resist.Type: GrantFiled: March 11, 2016Date of Patent: October 17, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Wei Chang, Hong-Da Lin, Chih-Chien Wang, Chun-Chang Chen, Wang-Pen Mo, Hung-Chang Hsieh
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Publication number: 20170186808Abstract: A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.Type: ApplicationFiled: March 7, 2016Publication date: June 29, 2017Inventors: Wei-Chao Chiu, Chih-Chien Wang, Feng-Jia Shiu, Ching-Sen Kuo, Chun-Wei Chang, Kai Tzeng
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Publication number: 20160195807Abstract: A method includes forming a first photo resist layer over a base structure and a target feature over the base structure, performing an un-patterned exposure on the first photo resist layer, and developing the first photo resist layer. After the step of developing, a corner portion of the first photo resist layer remains at a corner between a top surface of the base structure and an edge of the target feature. A second photo resist layer is formed over the target feature, the base structure, and the corner portion of the first photo resist layer. The second photo resist layer is exposed using a patterned lithography mask. The second photo resist layer is patterned to form a patterned photo resist.Type: ApplicationFiled: March 11, 2016Publication date: July 7, 2016Inventors: Chun-Wei Chang, Hong-Da Lin, Chih-Chien Wang, Chun-Chang Chen, Wang-Pen Mo, Hung-Chang Hsieh
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Patent number: 9360755Abstract: Among other things, one or more techniques and systems for performing a spin coating process associated with a wafer and for controlling thickness of a photoresist during the spin coating process are provided. In particular, a thickening phase is performed during the spin coating process in order to increase a thickness of the photoresist. For example, air temperature of down flow air, flow speed of the down flow air, and heat temperature of heat supplied towards the wafer are increased during the thickening phase. The increase in down flow air and heat increase a vaporization factor of the photoresist, which results in an increase in viscosity and thickness of the photoresist. In this way, the wafer can be rotated at relatively lower speeds, while still attaining a desired thickness. Lowering rotational speed of wafers allows for relatively larger wafers to be stably rotated.Type: GrantFiled: March 14, 2013Date of Patent: June 7, 2016Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chun-Wei Chang, Chia-Chieh Lin, Chih-Chien Wang, Wang-Pen Mo, Hung-Chang Hsieh
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Patent number: 9285677Abstract: A method includes forming a first photo resist layer over a base structure and a target feature over the base structure, performing an un-patterned exposure on the first photo resist layer, and developing the first photo resist layer. After the step of developing, a corner portion of the first photo resist layer remains at a corner between a top surface of the base structure and an edge of the target feature. A second photo resist layer is formed over the target feature, the base structure, and the corner portion of the first photo resist layer. The second photo resist layer is exposed using a patterned lithography mask. The second photo resist layer is patterned to form a patterned photo resist.Type: GrantFiled: November 5, 2013Date of Patent: March 15, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Wei Chang, Hong-Da Lin, Chih-Chien Wang, Chun-Chang Chen, Wang-Pen Mo, Hung-Chang Hsieh
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Patent number: 9153620Abstract: A method for manufacturing the image sensor device is provided. The method includes depositing a first dielectric layer over a back surface of a substrate, forming a ridge over the first dielectric layer, depositing a second dielectric layer over the first dielectric layer, including filling in a space between two adjacent ridges. The method also includes removing the ridge to form a trench in the second dielectric layer and forming a metal grid in the trench.Type: GrantFiled: March 3, 2014Date of Patent: October 6, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chien Wang, Chihy-Yuan Cheng, Chuan-Ling Wu, Chun-Chang Chen, Wang-Pen Mo, Feng-Jia Shiu
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Publication number: 20150249109Abstract: A method for manufacturing the image sensor device is provided. The method includes depositing a first dielectric layer over a back surface of a substrate, forming a ridge over the first dielectric layer, depositing a second dielectric layer over the first dielectric layer, including filling in a space between two adjacent ridges. The method also includes removing the ridge to form a trench in the second dielectric layer and forming a metal grid in the trench.Type: ApplicationFiled: March 3, 2014Publication date: September 3, 2015Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chien Wang, Chihy-Yuan Cheng, Chuan-Ling Wu, Chun-Chang Chen, Wang-Pen Mo, Feng-Jia Shiu
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Publication number: 20150243500Abstract: A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.Type: ApplicationFiled: May 8, 2015Publication date: August 27, 2015Inventors: Chun-Wei Chang, Chih-Chien Wang, Wang-Pen Mo, Hung-Chang Hsieh
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Patent number: 9040891Abstract: A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D1. A mask layer is formed over the substrate. The mask layer has a plurality of openings in the pixel region. A spacer is formed in an interior surface of each opening. A plurality of second trenches is etched through each opening having the spacer in the pixel region. Each of the second trenches has a depth D2. The depth D1 is larger than the depth D2.Type: GrantFiled: June 8, 2012Date of Patent: May 26, 2015Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: U-Ting Chen, Dun-Nian Yaung, Jen-Cheng Liu, Yu-Hao Shih, Chih-Chien Wang, Shih Pei Chou, Wei-Tung Huang, Cheng-Ta Wu
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Patent number: 9028915Abstract: A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.Type: GrantFiled: September 4, 2012Date of Patent: May 12, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Wei Chang, Chih-Chien Wang, Wang-Pen Mo, Hung-Chang Hsieh
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Patent number: 8940574Abstract: A method includes forming a plurality of image sensors on a front side of a semiconductor substrate, and forming a dielectric layer on a backside of the semiconductor substrate. The dielectric layer is over the semiconductor substrate. The dielectric layer is patterned into a plurality of grid-filling regions, wherein each of the plurality of grid-filling regions overlaps one of the plurality of image sensors. A metal layer is formed on top surfaces and sidewalls of the plurality of grid-filling regions. The metal layer is etched to remove horizontal portions of the metal layer, wherein vertical portions of the metal layer remain after the step of etching to form a metal grid. A transparent material is filled into grid openings of the metal grid.Type: GrantFiled: April 17, 2012Date of Patent: January 27, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chien Wang, Chu-Wei Chang, Wang-Pen Mo, Hung-Chang Hsieh
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Publication number: 20140272704Abstract: Among other things, one or more techniques and systems for performing a spin coating process associated with a wafer and for controlling thickness of a photoresist during the spin coating process are provided. In particular, a thickening phase is performed during the spin coating process in order to increase a thickness of the photoresist. For example, air temperature of down flow air, flow speed of the down flow air, and heat temperature of heat supplied towards the wafer are increased during the thickening phase. The increase in down flow air and heat increase a vaporization factor of the photoresist, which results in an increase in viscosity and thickness of the photoresist. In this way, the wafer can be rotated at relatively lower speeds, while still attaining a desired thickness. Lowering rotational speed of wafers allows for relatively larger wafers to be stably rotated.Type: ApplicationFiled: March 14, 2013Publication date: September 18, 2014Inventors: Chun-Wei Chang, Chia-Chieh Lin, Chih-Chien Wang, Wang-Pen Mo, Hung-Chang Hsieh