Abstract: A method includes forming a first photo resist layer over a base structure and a target feature over the base structure, performing an un-patterned exposure on the first photo resist layer, and developing the first photo resist layer. After the step of developing, a corner portion of the first photo resist layer remains at a corner between a top surface of the base structure and an edge of the target feature. A second photo resist layer is formed over the target feature, the base structure, and the corner portion of the first photo resist layer. The second photo resist layer is exposed using a patterned lithography mask. The second photo resist layer is patterned to form a patterned photo resist.

Abstract: An illuminating device includes a heat-dissipating shroud, a heat-dissipating module, an upper cover module and a lower cover module. The heat-dissipating module includes a light source, a substrate, a heat-conducting element and heat-dissipating blades. The upper cover module includes an upper cover, a light sensor and a protective cover. The lower cover module includes a lower cover, a transparent shroud and a transformer. The heat-dissipating shroud is assembled above the heat-dissipating blades of the heat-dissipating module. A top surface of the heat-dissipating shroud is provided with heat-dissipating holes. A space of a suitable height is generated between the top surface of the heat-dissipating shroud and the heat-dissipating blades of the heat-dissipating module to act as a heat concentration chamber. A gap is formed between the bottom of the heat-dissipating shroud and the top surface of the upper cover of the upper cover module.

Abstract: A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.

Abstract: A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D1. A mask layer is formed over the substrate. The mask layer has a plurality of openings in the pixel region. A spacer is formed in an interior surface of each opening. A plurality of second trenches is etched through each opening having the spacer in the pixel region. Each of the second trenches has a depth D2. The depth D1 is larger than the depth D2.

Abstract: An illuminating device includes a heat-dissipating shroud, a heat-dissipating module, an upper cover module and a lower cover module. The heat-dissipating module includes a light source, a substrate, a heat-conducting element and heat-dissipating blades. The upper cover module includes an upper cover, a light sensor and a protective cover. The lower cover module includes a lower cover, a transparent shroud and a transformer. The heat-dissipating shroud is assembled above the heat-dissipating blades of the heat-dissipating module. A top surface of the heat-dissipating shroud is provided with heat-dissipating holes. A space of a suitable height is generated between the top surface of the heat-dissipating shroud and the heat-dissipating blades of the heat-dissipating module to act as a heat concentration chamber. A gap is formed between the bottom of the heat-dissipating shroud and the top surface of the upper cover of the upper cover module.

Abstract: A method includes forming a plurality of image sensors on a front side of a semiconductor substrate, and forming a dielectric layer on a backside of the semiconductor substrate. The dielectric layer is over the semiconductor substrate. The dielectric layer is patterned into a plurality of grid-filling regions, wherein each of the plurality of grid-filling regions overlaps one of the plurality of image sensors. A metal layer is formed on top surfaces and sidewalls of the plurality of grid-filling regions. The metal layer is etched to remove horizontal portions of the metal layer, wherein vertical portions of the metal layer remain after the step of etching to form a metal grid. A transparent material is filled into grid openings of the metal grid.

Abstract: A reticle carrier including a base portion and a cover portion at least partially detachable from the base portion. The base portion and the cover portion are configured to collectively house a reticle in a region collectively defined by the base portion and the cover portion when the base portion and the cover portion are fully attached. At least a portion of an interior surface of at least one of the base portion and the cover portion is treated with a sulfide-absorbing composition, such as silver or a silver-containing alloy.