Abstract: A semiconductor device includes a substrate; a fin structure formed on a substrate; and a gate feature formed over the fin structure, the gate feature comprising a gate dielectric layer, wherein the gate dielectric layer traverses the fin structure to overlay a central portion of the fin structure and opposite side portions of the fin structure that are located in respective undercuts formed in respective portions of a dielectric layer located adjacent to opposite sidewalls of the gate feature, wherein the undercuts extend beyond respective sidewalls of the gate feature and away from the central portion of the fin structure.

Abstract: A moiré image processing device is provided, including a light-transmitting film, a light sensor, and an image processor. The light-transmitting film includes a plurality of microlenses, and a light-incident surface and a light-exit surface, where the microlenses are disposed on the light-incident surface, the light-exit surface, or a combination thereof according to a distribution pattern. The light sensor includes a photosensitive surface, where the photosensitive surface faces the light-exit surface, there are a plurality of pixels on the photosensitive surface, and the pixels sense the microlenses to obtain a photosensitive image corresponding to the distribution pattern. The image processor is coupled to the light sensor, where the image processor performs, according to a virtual image and the photosensitive image, image processing of simulating a moiré effect to generate a moiré image, where the virtual image corresponds to the distribution pattern and is similar to the photosensitive image.

Abstract: A moiré pattern imaging device includes a light-transmitting film and an optical sensor. The light-transmitting film includes a plurality of microlenses, and a light-incident surface and a light-exit surface opposite to each other. The plurality of microlenses are disposed on the light-incident surface, the light-exit surface or a combination thereof, and the plurality of microlenses are arranged in two dimensions to form a microlens array. The optical sensor includes a photosurface. The photosurface faces the light-exit surface of the light-transmitting film, the photosurface is provided with a plurality of pixels, and the plurality of pixels are arranged in two dimensions to form a pixel array. The microlens array and the pixel array correspondingly form a moiré pattern effect to produce an imaging magnification effect, and the photosurface of the optical sensor senses light and forms a moiré pattern magnification image.

Abstract: The present invention discloses a video data display device including a plurality of driving circuit. Each driving circuit includes a status controller, a data receiver, an output data generation unit, and an output buffer. The status controller couples with the data receiver, the output data generation unit, and the output buffer. The status controller generates a status signal based on the operation information of the data receiver, the output data generation unit, or the output buffer. The status controller transmits the status signal to the status controller of other driving circuits.

Abstract: A thin film optical lens device includes a first light-permissive film and a second light-permissive film. The first light-permissive includes first micro-lenses, a first light incident surface, and a first light illuminating surface opposite to the first light incident surface. The first micro-lenses are two-dimensionally arranged to form a first micro-lens array. The second light-permissive film includes second micro-lenses, a second light incident surface, and a second light illuminating surface opposite to the second light incident surface. The second micro-lenses are two dimensionally arranged to form a second micro-lens array. The second light incident surface faces the first light illuminating surface. The first micro-lens array and the second micro-lens array correspondingly produce the moiré pattern effect to provide an image magnification effect.

Abstract: A semiconductor device includes a substrate; a fin structure formed on a substrate; and a gate feature formed over the fin structure, the gate feature comprising a gate dielectric layer, wherein the gate dielectric layer traverses the fin structure to overlay a central portion of the fin structure and opposite side portions of the fin structure that are located in respective undercuts formed in respective portions of a dielectric layer located adjacent to opposite sidewalls of the gate feature, wherein the undercuts extend beyond respective sidewalls of the gate feature and away from the central portion of the fin structure.

Abstract: A thin proximity sensing device includes a transparent plate and a light sensor. The transparent plate includes a first surface and a second surface. The first surface is provided with a light source and a light entering area. The light source is arranged on the first surface. The second surface is provided with a reflector. The light sensor includes a light receiving area. The light sensor is arranged on the transparent plate. The reflector is capable of correspondingly reflecting specific incident light. The specific incident light refers to light that enters the transparent plate through the light entering area on the first surface after the light emitted by the light source is reflected externally, and is incident to the reflector. After reflected by the reflector, the specific incident light is reflected one or more times within the thickness of the transparent plate and is transmitted to the light sensor.

Abstract: An optical touch apparatus includes a light source unit, an optical signal processing unit, and a position computation unit. The light source unit emits light beams and generates three reference light spots at different positions. The optical signal processing unit receives three pieces of reflected light information respectively reflected and propagated by the three reference light spots and analyzes the three pieces of reflected light information to correspondingly generate three pieces of optical analysis information, each of the three pieces of optical analysis information includes a piece of vibration wave information and a piece of vibration time point information, and the piece of vibration wave information includes a touch vibration wave. The position computation unit computes a piece of touch position information according to each of the pieces of light spot position information, each of the pieces of vibration time point information, and the piece of vibration wave velocity information.

Abstract: A semiconductor device includes a substrate; a fin structure formed on a substrate; and a gate feature formed over the fin structure, the gate feature comprising a gate dielectric layer, wherein the gate dielectric layer traverses the fin structure to overlay a central portion of the fin structure and opposite side portions of the fin structure that are located in respective undercuts formed in respective portions of a dielectric layer located adjacent to opposite sidewalls of the gate feature, wherein the undercuts extend beyond respective sidewalls of the gate feature and away from the central portion of the fin structure.

Abstract: A thin plate imaging device in accordance with the present invention comprises a guide light plate, at least an imaging unit, at least a photosensitive unit and at least a reflection lens; the guide light plate and the imaging unit are utilized to allow lights to conduct total internal reflection or reflection propagation in one dimension, the photosensitive unit is placed in the path of the total internal reflection or reflection propagation and disposed at the image focus position of the imaging unit; clear images can be obtained without moving the imaging unit or the photosensitive unit back and forth, and objects with different object distances can be imaged on different spots of the photosensitive unit such that relative distances of the objects can be determined by image signals obtained via the photosensitive unit directly.

Abstract: A semiconductor device includes a fin structure, disposed on a substrate, that horizontally extends along a direction; and a gate feature comprising a gate dielectric layer and at least a first metal gate layer overlaying the gate dielectric layer, wherein the gate dielectric layer and the first metal gate layer traverse the fin structure to overlay a central portion of the fin structure and further extend along the direction to overlay at least a side portion of the fin structure that is located outside a vertical projection of a sidewall of the gate feature.

Abstract: A grating plate device includes a light transmitting substrate, a plurality of first diffraction gratings, and a plurality of second diffraction gratings. The light transmitting substrate includes a first surface and a second surface, the first surface has a first imaging area and a second imaging area. The first diffraction gratings are disposed on the first imaging area, and each of the first diffraction gratings includes two first grating lines parallel to each other and a first slit between the two first grating lines. The second diffraction gratings are disposed on the second imaging area, each of the second diffraction gratings includes two second grating lines parallel to each other and a second slit between the two second grating lines, and the first diffraction gratings are not parallel to the second diffraction gratings or a width of the first slit is different from a width of the second slit.

Abstract: A holographic image film, and a holographic image recording method and reconstruction method are provided. The holographic image recording method includes a preparation step, an irradiation step and a recording step. The preparation step includes stacking a holographic negative film on a transparent substrate. The irradiation step includes emitting object light and reference light. The reference light is emitted into the transparent substrate and undergoes multiple times of total reflections in a thickness of the transparent substrate to form total internal reflected light. The recording step includes generating a holographic image interference line by a mutual interference between the total internal reflected light and the object light, and recording the holographic image interference line on the holographic negative film in a photosensitive manner.

Abstract: A thin plate imaging device in accordance with the present invention comprises a guide light plate, at least an imaging unit, at least a photosensitive unit and at least a reflection lens; the guide light plate and the imaging unit are utilized to allow lights to conduct total internal reflection or reflection propagation in one dimension, the photosensitive unit is placed in the path of the total internal reflection or reflection propagation and disposed at the image focus position of the imaging unit; clear images can be obtained without moving the imaging unit or the photosensitive unit back and forth, and objects with different object distances can be imaged on different spots of the photosensitive unit such that relative distances of the objects can be determined by image signals obtained via the photosensitive unit directly.

Abstract: A light touch apparatus includes a light emitting unit, an imaging unit, an optical signal processing unit, and a position processing unit. The light emitting unit emits a projection light ray. The imaging unit captures an external image, where the external image includes multiple two-dimensional pixels, and corresponding to relative positions of the two-dimensional pixels, the projection light ray of the light emitting unit forms multiple projection spots. The optical signal processing unit receives multiple pieces of reflection light information, and analyzes the pieces of reflection light information to correspondingly generate multiple pieces of analysis spot information, where the pieces of analysis spot information include touch vibration information, and the touch vibration information includes a touch vibration wave whose frequency domain is different from a frequency domain of the projection light ray.

Abstract: A thin plate imaging device in accordance with the present invention comprises a guide light plate, at least an imaging unit, and at least a photosensitive unit; the guide light plate and the imaging unit are utilized to allow lights to conduct total internal reflection or reflection propagation in dimension, the photosensitive unit is placed in the path of the total internal reflection or reflection propagation and disposed at the image focus position of the imaging unit; clear images can be obtained without moving the imaging unit or the photosensitive unit back and forth, and objects with different object distances can be imaged on different spots of the photosensitive unit such that relative distances of the objects can be determined by image signals obtained via the photosensitive unit directly.

Abstract: An optical touch apparatus includes a light source unit, an optical signal processing unit, and a position computation unit. The light source unit emits light beams and generates three reference light spots at different positions. The optical signal processing unit receives three pieces of reflected light information respectively reflected and propagated by the three reference light spots and analyzes the three pieces of reflected light information to correspondingly generate three pieces of optical analysis information, each of the three pieces of optical analysis information includes a piece of vibration wave information and a piece of vibration time point information, and the piece of vibration wave information includes a touch vibration wave. The position computation unit computes a piece of touch position information according to each of the pieces of light spot position information, each of the pieces of vibration time point information, and the piece of vibration wave velocity information.

Abstract: A semiconductor device includes a fin structure, disposed on a substrate, that horizontally extends along a direction; and a gate feature comprising a gate dielectric layer and at least a first metal gate layer overlaying the gate dielectric layer, wherein the gate dielectric layer and the first metal gate layer traverse the fin structure to overlay a central portion of the fin structure and further extend along the direction to overlay at least a side portion of the fin structure that is located outside a vertical projection of a sidewall of the gate feature.

Abstract: A semiconductor device includes a fin structure, disposed on a substrate, that horizontally extends along a direction; and a gate feature comprising a gate dielectric layer and at least a first metal gate layer overlaying the gate dielectric layer, wherein the gate dielectric layer and the first metal gate layer traverse the fin structure to overlay a central portion of the fin structure and further extend along the direction to overlay at least a side portion of the fin structure that is located outside a vertical projection of a sidewall of the gate feature.

Abstract: A holographic image recording method is disclosed, that is realized through utilizing a holographic image fetching and recording device, including the following steps: using an image fetching device to fetch an image of a target object placed on a rotation table rotating at a fixed speed, the image thus obtained is transmitted to a display panel through a connection line; using a light emitting unit to emit coherent light to a first reflector; that reflects the coherent light to light splitter; and the light splitter splits the coherent light along a first light path and a second light path into an object light and a reference light, and transmits them onto a holographic film to interfere with each other, to form a holographic image. A holographic image reconstructing method is also disclosed, to reconstruct and form a 3D holographic image floating above the holographic film.