Abstract: Video processing methods and apparatuses in a video encoding or decoding system for processing out-of-bounds nodes in a current picture. An out-of-bounds node is a coding tree node with a block region across a current picture boundary. The video processing method or apparatus determines an inferred splitting type, applies the inferred splitting type to split the out-of-bounds node into child blocks, adaptively splits each child block into one or multiple leaf blocks, and encodes or decodes the leaf blocks in the out-of-bounds node inside the current picture. The inferred splitting type for partitioning out-of-bounds nodes in an inter slice, picture, or tile is the same as the inferred splitting type for partitioning out-of-bounds nodes in an intra slice, picture, or tile.

Abstract: Exemplary video processing methods and apparatuses for encoding or decoding a current block by inter prediction are disclosed. Input data of a current block is received and partitioned into sub-partitions and motion refinement is independently performed on each sub-partition. A reference block for each sub-partition is obtained from one or more reference pictures according to an initial motion vector (MV). A refined MV for each sub-partition is derived by searching around the initial MV with N-pixel refinement. One or more boundary pixels of the reference block for a sub-partition is padded for motion compensation of the sub-partition. A final predictor for the current block is generated by performing motion compensation for each sub-partition according to its refined MV. The current block is then encoded or decoded according to the final predictor.

Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(?)/S(?max), ?0.

Abstract: Method and apparatus for affine CPMV or ALF refinement are mentioned. According to this method, statistical data associated with the affine CPMV or ALF refinement are collected over a picture area. Updated parameters for the affine CPMV refinement or the ALF refinement are then derived based on the statistical data, where a process to derive the updated parameters includes performing multiplication using a reduced-precision multiplier for the statistical data. The reduced-precision multiplier truncates at least one bit of the mantissa part. In another embodiment, the process to derive the updated parameters includes performing reciprocal for the statistical data using a lookup table with (m?k)-bit input by truncating k bits from the m-bit mantissa part, and contents of the lookup table includes m-bit outputs. m and k are positive integers.

Abstract: Encoding methods and apparatuses include receiving input video data of a current block in a current picture and applying a Cross-Component Adaptive Loop Filter (CCALF) processing on the current block based on cross-component filter coefficients to refine chroma components of the current block according to luma sample values. The method further includes signaling two Adaptive Loop Filter (ALF) signal flags and two CCALF signal flags in an Adaptation Parameter Set (APS) with an APS parameter type equal to ALF or parsing two ALF signal flags and two CCALF signal flags from an APS with an APS parameter type equal to ALF, signaling or parsing one or more Picture Header (PH) CCALF syntax elements or Slice Header (SH) CCALF syntax elements, wherein both ALF and CCALF signaling are present either in a PH or SH, and encoding or decoding the current block in the current picture.

Abstract: Provided are FinFET devices and methods of forming the same. A dummy gate having gate spacers on opposing sidewalls thereof is formed over a substrate. A dielectric layer is formed around the dummy gate. An upper portion of the dummy gate is removed and upper portions of the gate spacers are removed, so as to form a first opening in the dielectric layer. A lower portion of the dummy gate is removed to form a second opening below the first opening. A metal layer is formed in the first and second openings. The metal layer is partially removed to form a metal gate.

Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: Various schemes pertaining to pre-encoding processing of a video stream with motion compensated temporal filtering (MCTF) are described. An apparatus determines a filtering interval for a received raw video stream having pictures in a temporal sequence. The apparatus selects from the pictures a plurality of target pictures based on the filtering interval, as well as a group of reference pictures for each target picture to perform pixel-based MCTF, which generates a corresponding filtered picture for each target picture. The apparatus subsequently transmits the filtered pictures as well as non-target pictures to an encoder for encoding the video stream. Subpictures of natural images and screen content images are separately processed by the apparatus.

Abstract: A method includes providing a substrate, forming a patterned hard mask layer over the substrate, etching the patterned hard mask layer to form a hole that penetrates the patterned hard mask layer, forming a barrier portion in the hole, removing the patterned hard mask layer, and forming a gate structure over the substrate. Formation of the gate structure includes forming a dielectric body portion on the substrate. The barrier portion that is thicker than the dielectric body portion adjoins one end of the dielectric body portion. The dielectric body portion and the barrier portion are collectively referred to as a gate dielectric layer. Formation of the gate structure further includes forming a gate electrode on the gate dielectric layer and forming gate spacers on opposite sidewalls of the gate electrode. During formation of the gate spacers, a portion of the barrier portion is removed to form a recessed corner.

Abstract: A first fin structure is disposed over a substrate. The first fin structure contains a semiconductor material. A gate dielectric layer is disposed over upper and side surfaces of the first fin structure. A gate electrode layer is formed over the gate dielectric layer. A second fin structure is disposed over the substrate. The second fin structure is physically separated from the first fin structure and contains a ferroelectric material. The second fin structure is electrically coupled to the gate electrode layer.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Video processing methods and apparatuses implemented in a video encoding or decoding system with conditional secondary transform signaling. The video encoding system determines and applies a transform operation to residuals of a transform block to generate final transform coefficients, and adaptively signals a secondary transform index according to a position of a last significant coefficient in the transform block. A value of the secondary transform index is determined according to the transform operation.

Abstract: Method and apparatus of video coding are disclosed. According to one method, in the decoder side, a predefined Intra mode is assigned to a neighboring block adjacent to the current luma block when the neighboring block satisfies one or more conditions. An MPM (Most Probable Mode) list is derived based on information comprising at least one of neighboring Intra modes. A current Intra mode is derived utilizing the MPM list. The current luma block is decoded according to the current Intra mode According to another method, a predefined Intra mode is assigned to a neighboring block adjacent to the current luma block if the neighboring block is coded in BDPCM (Block-based Delta Pulse Code Modulation) mode, where the predefined Intra mode is set to horizontal mode or vertical mode depending on prediction direction used by the BDPCM mode.

Abstract: Video processing methods and apparatuses for coding a current block comprise receiving input data of a current block, partitioning the current block into multiple sub-blocks, deriving sub-block MVs for the current block according to a sub-block motion compensation coding tool, constraining the sub-block MVs to form constrained sub-block MVs, and encoding or decoding the current block using the constrained sub-block MVs, and applying motion compensation to the current block using the constrained sub-block MVs to encode or decode the current block. The sub-block MVs may be constrained according to a size, width, or height of the current block or a sub-block, an inter prediction direction of one of control point MVs of the current block, the current block, or current sub-block, the control point MVs, or a combination of the above.

Abstract: An antenna apparatus used in an electronic device having a flexible display, the flexible display can be bent at a rotating shaft, the flexible display includes a primary screen and a secondary screen respectively configured on two sides of the rotating shaft. The antenna apparatus may include a first metal strip disposed on the primary screen frame close to one end of the rotating shaft, and a second metal strip disposed on the secondary screen frame close to the same end of the rotating shaft. The first metal strip may be implemented as a plurality of antennas through dual-feed design. When the flexible display is in a folded state, the second metal strip may be coupled to the first metal strip to generate radiation. In this case, the second metal strip may be used as a parasitic antenna of the first metal strip.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: An optical member driving mechanism is provided. The optical member driving mechanism includes a first portion and a matrix structure. The first portion is connected to a first optical member and corresponds to a first light. The matrix structure is disposed on the first portion and corresponds to a second light, wherein the first light is different from the second light. The matrix structure includes a regularly-arranged structure.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.