Abstract: A flash memory cell structure has a substrate, a select gate, a first-type doped region, a shallow second-type doped region, a deep second-type doped region, and a doped source region. The substrate has a stacked gate. The select gate is formed on the substrate and adjacent to the stacked gate. The first-type ion formed region is doped in the substrate and adjacent to the select gate as a drain. The shallow second-type doped region is formed on one side of the first-type doped region below the stacked gate. The deep second-type doped region, which serves as a well, is formed underneath the first-type doped region with one side bordering on the shallow second-type doped region. The doped source region is formed on a side of the shallow second-type doped region as a source.

Abstract: A method of fabricating a non-volatile memory is described. A substrate having a tunneling layer and a floating gate layer thereon is provided. A mask layer is formed on the floating gate. The mask layer has openings that expose a portion of the floating gate layer. Then, a portion of the floating gate layer is removed from the openings to form sunken regions on the surface of the floating gate layer. An inter-gate dielectric layer is formed on the floating gate layer. A control gate layer is formed on the inter-gate dielectric layer. After that, the mask layer and the floating gate layer under the mask layer are removed to form another opening. A select gate layer is formed inside the opening.

Abstract: A method for eliminating internal reflection signal in a range finding system is disclosed, including the steps of receiving a range-finding signal reflected by an object and an internal reflection signal caused by internal reflection of the range finding system, converting the range finding signal and internal reflection signal, as a combination, into an electrical current signal, cropping the electrical current signal in a time interval for the electrical current signal to pass so as to generate a first electrical signal indicating the internal reflection signal, and subtracting the first electrical signal from the current signal to provide a second electrical signal representing the range-finding signal reflected by the object.

Abstract: A multi-level non-volatile memory including a memory cell disposed on a substrate is provided. The memory cell includes a control gate, a charge storage layer, a doped region, a select gate, and an assist gate. The control gate is disposed on the substrate. The charge storage layer is disposed between the control gate and the substrate. The doped region is disposed in the substrate at the first side of the control gate. The select gate is disposed on the sidewall of the first side of the control gate and on the substrate between the control gate and the doped region. The assist gate is disposed on the sidewall of the second side of the control gate. An inversion layer is formed in the substrate below the assist gate when a voltage is applied to the assist gate.

Abstract: A nonvolatile memory includes a substrate, stacked gate structures, spacers, control gates, a composite dielectric layer and source region/drain regions. Each of stack gate structures is formed on the substrate and is consisted of a select gate dielectric layer, a select gate and a cap layer. The spacers are disposed on the sidewalls of the stack gate structure. The composite dielectric layer including a bottom dielectric layer, a charge trapping layer and upper dielectric layer is formed on the substrate. The control gates, which filled in the spaces between the stacked gate structures, are disposed on the composite dielectric layer and connected to each other. The source region/drain region is configured in the substrate near the outer two stacked gate structures.

Abstract: A remote-controlled sight of a firearm has an aiming unit and a remote-controlled unit. The aiming unit is detachably disposed on a firearm body of the firearm and the remote-controlled unit connects to the firearm body. The remote-controlled unit has a button, a wireless transmitting module and a wireless receiving module, the wireless transmitting module is electrically connected to the button and the wireless receiving module is electrically connected to the aiming unit. When the button is pressed, a signal is transmitted from the wireless transmitting module and received by the wireless receiving module to actuate the aiming unit.

Abstract: A NAND flash memory cell row includes first and second stacked gate structures, control and floating gates, inter-gate dielectric layer, a tunnel oxide layer, doping regions and source/drain regions. The first stacked gate structures has an erase gate dielectric layer, an erase gate and a first cap layer. Each of the second stacked gate structure has a select gate dielectric layer, a select gate and a second cap layer. The control gate is between each of the first stacked gate structures, and between each of the second stacked gate structures and the adjacent first stacked gate structure. The floating gate is between the control gate and substrate. The inter-gate dielectric layer is disposed between the control and floating gates. The tunnel oxide is between the floating gate and substrate. The doping regions are disposed under the first stacked gate structure, and the source/drain regions are in the exposed substrate.

Abstract: A subband synthesis filtering apparatus for M sets of signals is provided. Each set of signals includes N subband sample signals. The apparatus includes a processor for processing the ith set of signals among the M sets of signals, wherein i is an integer index ranging from 0 to (M?1). The processor includes a DCT converting module and a generating module. The DCT converting module converts the N subband sample signals of the ith set of signals into N converted vectors. If i is an odd number, the (2j?1)th subband sample signal among the N subband sample signals is multiplied by negative one in the converting module, whereinj is an integer index ranging from 1 to (N/2). The generating module generates N pulse code modulation signals based on the N converted vectors.

Abstract: A method for fabricating a flash memory is described. A mask layer having openings to expose a portion of the substrate is formed on the substrate. A tunneling dielectric layer is formed at the bottom surface of the openings. Conductive spacers are formed on the sidewalls of the openings. The conductive spacers are patterned to form a plurality of floating gates. A plurality of buried doped regions is formed in the substrate under the bottom surface of the openings. An inter-gate dielectric layer is formed over the substrate. A plurality of control gates is formed over the substrate to fill the openings. The mask layer is removed to form a plurality of memory units. A plurality of source regions and drain regions are formed in the substrate beside the memory units.

Abstract: A method of fabricating a non-volatile memory is described. A substrate having stacked gate structures thereon is provided. Each stacked gate structure includes a select gate dielectric layer, a select gate and a cap layer. A source region and a drain region are formed in the substrate. The source region and the drain region are separated from each other by at least two stacked gate structures. A tunneling dielectric layer is formed over the substrate and then a first conductive layer is formed over the tunneling dielectric layer. The first conductive layer is patterned to form floating gates in the gaps between the stacked gate structures. After forming an inter-gate dielectric layer over the substrate, a second conductive layer is formed over the substrate. The second conductive layer is patterned to form mutually linked control gates in the gaps between neighboring stacked gate structures.

Abstract: A synthesis subband filter apparatus is provided. The apparatus is used for processing 18 sets of signals which each includes 32 subband sampling signals in accordance with a specification providing 512 window coefficients. The apparatus includes a processor for processing the 18 sets of signals in sequence. The processor further includes a converting module and a generating module. The converting module is used for converting the 32 subband sampling signals of the set of signals being processed into 32 converted vectors by use of 32-points discrete cosine transform (DCT), and writing the 32 converted vectors into 512 default vectors with a first-in, first-out queue. The generating module is used for generating 32 pulse code modulation (PCM) signals, relative to the set of signals being processed according to a set of synthesis formulae proposed in this invention.

Abstract: A method for fabricating a flash memory is described. A mask layer having openings to expose a portion of the substrate is formed on the substrate. A tunneling dielectric layer is formed at the bottom surface of the openings. Conductive spacers are formed on the sidewalls of the openings. The conductive spacers are patterned to form a plurality of floating gates. A plurality of buried doped regions is formed in the substrate under the bottom surface of the openings. An inter-gate dielectric layer is formed over the substrate. A plurality of control gates is formed over the substrate to fill the openings. The mask layer is removed to form a plurality of memory units. A plurality of source regions and drain regions are formed in the substrate beside the memory units.

Abstract: A multifunction rangefinder capable of measuring distance, compass location and altitude. A distance measurement unit capable of long and short distance measurements transmits a light beam to a target, receives a reflected light from the target and outputs a distance measurement signal. A compass measurement unit measures terrestrial magnetism and outputs a compass measurement signal. An altitude measurement unit measures atmospheric pressure to generate an altitude measurement signal. A microprocessor calculates a distance between the target and the multifunction rangefinder, altitude and the compass location of the target according to the distance, altitude and compass measurement signals respectively.

Abstract: A non-volatile memory is provided. A plurality of stacked gate structure is formed on the substrate. The stacked gate structure includes, upward from the substrate surface, a select gate dielectric layer, a select gate and a cap layer. The spacers are disposed on the sidewalls of the stacked gate structures. The control gates are disposed over the substrate filling the space between the stacked gate structures and are mutually connected together. The floating gates are disposed between the stacked gate structures and positioned between the control gate and the substrate. The inter-gate dielectric layers are disposed between the control gates and the floating gates. The tunneling dielectric layers are disposed between the floating gates and the substrate. The source/drain regions are disposed in the substrate outside the two outermost stacked gate structures.

Abstract: A flash memory cell array comprises a substrate, a string of memory cell structures and source region/drain region. Each of memory cell structures includes a stack gate structure including a select gate dielectric layer, a select gate and a gate cap layer formed on the substrate; a spacer is set on the sidewall of the select gate; a control gate connected to the stack gate structure is set on the one side of the stack gate structure; a floating gate is set between the control gate and the substrate; an inter-gate dielectric layer is set between the control gate and the floating gate; and a tunneling dielectric layer is set between the floating gate and the substrate. The source region/drain region is set in the substrate near outer control gate and stack gate structure of the flash memory cell array.

Abstract: A non-volatile memory including a substrate, a plurality of gate structures, a plurality of select gate structures, spacers and source region/drain region is provided. Each gate structure on the substrate further includes a bottom dielectric layer, an electron trapping layer, an upper dielectric layer, a control gate and a cap layer. The select gate structures are disposed on one side of the respective each gate structure. Each select gate structure includes a select gate dielectric layer and a select gate. The select gate structures and the gate structures are connected in series to form a memory cell row. The spacers are disposed between the select gate structures and the gate structures. The source region and the drain region are disposed in the substrate on each side of the memory cell row.

Abstract: A method for eliminating internal reflection signal in a range finding system is disclosed, including the steps of receiving a range-finding signal reflected by an object and an internal reflection signal caused by internal reflection of the range finding system, converting the range finding signal and internal reflection signal, as a combination, into an electrical current signal, wave-shaping the electrical current signal to generate a first electrical signal indicating the internal reflection signal, and subtracting the first electrical signal from the current signal to provide a second electrical signal representing the range-finding signal reflected by the object.

Abstract: A method for fabricating a flash memory is described. A mask layer having openings to expose a portion of the substrate is formed on the substrate. A tunneling dielectric layer is formed at the bottom surface of the openings. Conductive spacers are formed on the sidewalls of the openings. The conductive spacers are patterned to form a plurality of floating gates. A plurality of buried doped regions is formed in the substrate under the bottom surface of the openings. An inter-gate dielectric layer is formed over the substrate. A plurality of control gates is formed over the substrate to fill the openings. The mask layer is removed to form a plurality of memory units. A plurality of source regions and drain regions are formed in the substrate beside the memory units.

Abstract: A method of fabricating a non-volatile memory is described. A substrate having a tunneling layer and a floating gate layer thereon is provided. A mask layer is formed on the floating gate. The mask layer has openings that expose a portion of the floating gate layer. Then, a portion of the floating gate layer is removed from the openings to form sunken regions on the surface of the floating gate layer. An inter-gate dielectric layer is formed on the floating gate layer. A control gate layer is formed on the inter-gate dielectric layer. After that, the mask layer and the floating gate layer under the mask layer are removed to form another opening. A select gate layer is formed inside the opening.

Abstract: A potted plant cultivate assembly includes a frame and multiple rods radially mounted on the frame. A chain wheel is pivotally mounted to a free end of each of the multiple rods. An endless chain is mounted around the multiple chain wheels and driven by a motor. The endless chain has two opposite sides each having a series of suspensions laterally extending therefrom for hanging potted plants. Consequently, the potted plants, hung on the suspensions, are circuitously moved with the endless chain for operator to conveniently plant, manure and spray water by controlling the motor.