Abstract: A semiconductor structure includes a substrate, a gate structure, source/drain epitaxial structures, a contact structure, a first via structure, a metal line, a hard mask layer, a spacer layer, and a second via structure. The gate structure is formed over the substrate. The source/drain epitaxial structures are formed on opposite sides of the gate structure. The contact structure is formed over one of the source/drain epitaxial structures. The first via structure is formed over the contact structure. The metal line is electrically connected to the first via structure. The hard mask layer is formed over the metal line. The spacer layer is formed over a top surface of the hard mask layer and over a sidewall of metal line. The second via structure is formed over the metal line through the spacer layer.

Abstract: An MRAM device includes a bottom electrode over a substrate, a magnetic tunnel junction (MTJ) structure on the bottom electrode and a top electrode on the MTJ structure. The MRAM device also includes spacers on sidewalls of the top electrode and the MTJ structure. The MRAM device further includes a first etch stop layer on the spacers. A bottommost surface of the first etch stop layer covers a topmost surface of the spacers. In addition, the MRAM device includes a top electrode via on the top electrode and the first etch stop layer.

Abstract: A semiconductor arrangement is provided. The semiconductor arrangement includes a first dielectric layer over a substrate, a metal layer over the first dielectric layer, a first conductive structure passing through the metal layer and the first dielectric layer, a second conductive structure passing through the metal layer and the first dielectric layer, and a third conductive structure coupling the first conductive structure to the second conductive structure, and overlying a first portion of the metal layer between the first conductive structure and the second conductive structure, wherein an interface exists between the metal layer and at least one of the first conductive structure or the second conductive structure.

Abstract: A circuit board etching device for improving etching factor, comprising: a circuit board conveying device, which laterally conveys a circuit board; a circuit forming etching tank and a first etchant spraying unit, the first etchant spraying unit sprays a first etchant on the etching surface of the circuit board; and a circuit modification etching tank and a second etchant spraying unit, the second etchant spraying unit sprays a second etchant on the etching surface of the circuit board, and make the etching speed of the circuit modification etching tank slower than the etching speed of the circuit forming etching tank, whereby having the effect of improving the etching factor of the circuit board

Abstract: An interconnect structure includes dielectric layer, a first conductive feature, a second conductive feature, a third conductive feature, and a dielectric fill. The first conductive feature is disposed in the dielectric layer. The second conductive feature is disposed over the first conductive feature. The second conductive feature includes a first conductive layer disposed over the first conductive feature, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer. The first conductive layer, the second conductive layer and the third conductive layer have substantially the same width. The third conductive feature is disposed over the dielectric layer. The dielectric fill is disposed over the dielectric layer between the second conductive feature and the third conductive feature.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a dielectric on wire structure is arranged directly over the interconnect wire. Outer sidewalls of the dielectric on wire structure are surrounded by the first interconnect dielectric layer. The integrated chip further includes a second interconnect dielectric layer arranged over the first interconnect dielectric layer, and an interconnect via that extends through the second interconnect dielectric layer and the dielectric on wire structure to contact the interconnect wire.

Abstract: A circuit device having an interlayer dielectric with pillar-type air gaps and a method of forming the circuit device are disclosed. In an exemplary embodiment, the method comprises receiving a substrate and depositing a first layer over the substrate. A copolymer layer that includes a first constituent polymer and a second constituent polymer is formed over the first layer. The first constituent polymer is selectively removed from the copolymer layer. A first region of the first layer corresponding to the selectively removed first constituent polymer is etched. The etching leaves a second region of the first layer underlying the second constituent polymer unetched. A metallization process is performed on the etched substrate, and the first layer is removed from the second region to form an air gap. The method may further comprise depositing a dielectric material within the etched first region.

Abstract: Interconnect structures and methods of forming the same are provided. An interconnect structure according to the present disclosure includes a conductive line feature over a substrate, a conductive etch stop layer over the conductive line feature, a contact via over the conductive etch stop layer, and a barrier layer disposed along a sidewall of the conductive line feature, a sidewall of the conductive etch stop layer, and a sidewall of the contact via.

Abstract: An MRAM device includes a bottom electrode over a substrate, a magnetic tunnel junction (MTJ) structure on the bottom electrode, and a top electrode on the MTJ structure. The MRAM device also includes spacers on sidewalls of the top electrode and the MTJ structure, and a first dielectric layer surrounding the spacers. The MRAM device further includes a patterned etch stop layer on the first dielectric layer and the spacers. In addition, the MRAM device includes a second dielectric layer on the patterned etch stop layer, and a top electrode via embedded in the second dielectric layer and in contact with the top electrode and the patterned etch stop layer.

Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a conductive line over the substrate. The semiconductor device structure also includes a catalyst structure over the conductive line and a carbon-containing conductive via directly on the catalyst structure. The semiconductor device structure further includes a dielectric layer surrounding the carbon-containing conductive via.

Abstract: A semiconductor structure includes a gate structure over a substrate. The structure also includes source/drain epitaxial structures formed on opposite sides of the gate structure. The structure also includes a contact structure formed over the source/drain epitaxial structure. The structure also includes a first via structure formed over the contact structure. The structure also includes a metal line electrically connected to the first via structure. The structure also includes a spacer layer formed over the sidewall and over a portion of a top surface of the metal line. The structure also includes a second via structure formed over the metal line through the spacer layer.

Abstract: An semiconductor device includes a first dielectric layer, an etch stop layer, an interconnect structure, and a second dielectric layer. The etch stop layer is over the first dielectric layer. The interconnect structure includes a conductive via in the first dielectric layer and the etch stop layer, a conductive line over the conductive via, an intermediate conductive layer over the conductive line, and a conductive pillar over the intermediate conductive layer. The interconnect structure is electrically conductive at least from a top of the conductive pillar to a bottom of the conductive via. The second dielectric layer surrounds the conductive line, the intermediate conductive layer, and the conductive pillar, wherein a bottom of the second dielectric layer is lower than a top of the conductive line, and a top of the second dielectric layer is higher than the top of the conductive line.

Abstract: In one embodiment, a method of forming metal interconnects uses a direct metal etch approach to form and fill the metal gap. The method may include directly etching a metal layer to form metal patterns. The metal patterns may be spaced apart from one another by recesses. A dielectric spacer may be formed extending along the sidewalls of each of the recesses. The recesses may be filled with a conductive material to form a second set of metal patterns. By directly etching the metal film, the technique allows for reduced line width roughness. The disclosed structure may have the advantages of increased reliability, better RC performance and reduced parasitic capacitance.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a dielectric on wire structure is arranged directly over the interconnect wire. Outer sidewalls of the dielectric on wire structure are surrounded by the first interconnect dielectric layer. The integrated chip further includes a second interconnect dielectric layer arranged over the first interconnect dielectric layer, and an interconnect via that extends through the second interconnect dielectric layer and the dielectric on wire structure to contact the interconnect wire.

Abstract: Interconnect structures and methods of forming the same are provided. An interconnect structure according to the present disclosure includes a conductive line feature over a substrate, a conductive etch stop layer over the conductive line feature, a contact via over the conductive etch stop layer, and a barrier layer disposed along a sidewall of the conductive line feature, a sidewall of the conductive etch stop layer, and a sidewall of the contact via.

Abstract: In a method of manufacturing a semiconductor device, first and second gate structures are formed. The first (second) gate structure includes a first (second) gate electrode layer and first (second) sidewall spacers disposed on both side faces of the first (second) gate electrode layer. The first and second gate electrode layers are recessed and the first and second sidewall spacers are recessed, thereby forming a first space and a second space over the recessed first and second gate electrode layers and first and second sidewall spacers, respectively. First and second protective layers are formed in the first and second spaces, respectively. First and second etch-stop layers are formed on the first and second protective layers, respectively. A first depth of the first space above the first sidewall spacers is different from a second depth of the first space above the first gate electrode layer.

Abstract: Provided herein are devices and systems comprising a light source which provides a beam to an optical module via a multimode fiber, an interference objective module outputs the beam processed by the optical module and collects interference signals from a sample; and a detector which detects the interference signals from the interference objective module wherein the optical module comprises an etendue squeezing component configured to slice the beams to at least two sub-beams and homogenize the sub-beams to an illumination field and match the shapes of the illumination field with the region of interest.

Abstract: An interconnect structure and methods of forming the same are described. In some embodiments, the structure includes a dielectric layer, a first conductive feature disposed in the dielectric layer, and a second conductive feature disposed over the first conductive feature. The second conductive feature includes a first sidewall, a first bottom, and a first angle between the first sidewall and the first bottom. The structure further includes a third conductive feature disposed over the dielectric layer and adjacent the second conductive feature. The third conductive feature includes a second sidewall, a second bottom, and a second angle between the second sidewall and the second bottom, the second angle is substantially different from the first angle, and the second and third conductive features are partially overlapping in an axis substantially parallel to a major surface of the substrate.

Abstract: In one embodiment, a method of forming metal interconnects uses a direct metal etch approach to form and fill the metal gap. The method may include directly etching a metal layer to form metal patterns. The metal patterns may be spaced apart from one another by recesses. A dielectric spacer may be formed extending along the sidewalls of each of the recesses. The recesses may be filled with a conductive material to form a second set of metal patterns. By directly etching the metal film, the technique allows for reduced line width roughness. The disclosed structure may have the advantages of increased reliability, better RC performance and reduced parasitic capacitance.

Abstract: An semiconductor device includes a first dielectric layer, an etch stop layer, an interconnect structure, and a second dielectric layer. The etch stop layer is over the first dielectric layer. The interconnect structure includes a conductive via in the first dielectric layer and the etch stop layer, a conductive line over the conductive via, an intermediate conductive layer over the conductive line, and a conductive pillar over the intermediate conductive layer. The interconnect structure is electrically conductive at least from a top of the conductive pillar to a bottom of the conductive via. The second dielectric layer surrounds the conductive line, the intermediate conductive layer, and the conductive pillar, wherein a bottom of the second dielectric layer is lower than a top of the conductive line, and a top of the second dielectric layer is higher than the top of the conductive line.