Abstract: The present disclosure relates to methods for performing wafer-level measurement and wafer-level binning of LED devices. The present disclosure also relates to methods for reducing thermal resistance of LED devices. The methods include growing epitaxial layers consisting of an n-doped layer, an active layer, and a p-doped layer on a wafer of a growth substrate. The method further includes forming p-contact and n-contact to the p-doped layer and the n-doped layer, respectively. The method further includes performing a wafer-level measurement of the LED by supplying power to the LED through the n-contact and the p-contact. The method further includes dicing the wafer to generate diced LED dies, bonding the diced LED dies to a chip substrate, and removing the growth substrate from the diced LED dies.

Abstract: The present disclosure provides methods for forming semiconductor devices with laser-etched vias and apparatus including the same. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside and a backside, and providing a layer above the frontside of the substrate, the layer having a different composition from the substrate. The method further includes controlling a laser power and a laser pulse number to laser etch an opening through the layer and at least a portion of the frontside of the substrate, filling the opening with a conductive material to form a via, removing a portion of the backside of the substrate to expose the via, and electrically coupling a first element to a second element with the via. A semiconductor device fabricated by such a method is also disclosed.

Abstract: A rehabilitation device for arms has an operating module, a control module and an inductive module. The operating module has a base, a body and multiple operating segments. The operating segments are connected to the body and each has a lever, a resisting panel and a resisting device. The control module is connected to the operating module and has a switch, a microcomputer, a resistance controller, an import interface, an export interface and a monitor. The resisting control device is electrically connected to the microcomputer and the operating segments. The inductive module is electrically connected to the operating module and the control module and has an inductive segment and a counter segment. The inductive segment is electrically connected to the microcomputer and has multiple pressure sensors. The counter segment is electrically connected to the inductive segment and the microcomputer and has multiple photoelectric sensors.

Abstract: A method of forming thin-film structure by oblique-angle deposition is provided. The method includes the steps of: evaporating target source in a chamber by an electron beam evaporation system, and introducing process gas into the chamber and adjusting tilt angle of the evaporation substrate and controlling temperature in the chamber during evaporation to form thin-film on a evaporation substrate by oblique-angle deposition, and then annealing the evaporation substrate to form a thin-film having porous nanorod microstructure.

Abstract: The present invention relates to a plantar fasciitis rehabilitation controlling device. It mainly comprises a securing portion, a rotatable portion, a torque pivoting portion, a pulling portion, and a controller. The securing portion and the rotatable portion are provided for securing a user's shank and foot. This torque pivoting portion can create a torque causing the rotatable portion moving back. The pulling portion has a controller so as to pull the rotatable portion to rotate between a first angle and a second angle so that it can reduce possibility of the plantar fasciitis and ease pain of the plantar fasciitis. Hence, this invention can achieve an active rehabilitation exercise. The belt's pulling interval time can be adjusted. It has a safety switch to ensure its product safety. It is convenient that the user can use a wireless device to operate this system. In addition, the user can be informed about current condition via an audio device.

Abstract: An inflation type cervical vertebrae rehabilitation device includes at least one cervical vertebrae cell, a head cell connected to the at least one cervical vertebrae cell, an electric inflation portion and a control portion. The method includes a preparing step, a setting inflation processes step, an inflating step, and a completion step. One or more cervical vertebrae cells are inflatable and positioned between a support position and an operation position to support and rehabilitate the user's neck. The head cell is provided to support the user's head. So, the cervical vertebrae cells can support the user's head and neck with rehabilitation functions. The head cell is an auxiliary for support the user's head. It is easy to carry. This invention could be remote controlled. It contains the far infra-red heating function. In addition, there is a pose balance feature.

Abstract: A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.

Abstract: A nano-patterned substrate includes a plurality of nano-particles or nanopillars on an upper surface thereof. A ratio of height to diameter of each of the nano-particles or each of the nanopillars is either greater than or equal to 1. Particularly, a ratio of height to diameter of the nanopillars is greater than or equal to 5. Each of the nano-particles or each of the nanopillars has an arc-shaped top surface. When an epitaxial growth process is applied onto the nano-patterned substrate to form an epitaxial layer, the epitaxial layer has very low defect density. Thus, a production yield of fabricating the subsequent device can be improved.

Abstract: The present invention discloses a transparent conductive nanostructured thin-film by oblique-angle deposition and method of the same. An electron beam system is utilized to evaporate the target source. Evaporation substrate is disposed on a plurality of adjustable sample stage. Multiple gas control valve and heat source is provided to control the gas flow and temperature within the process chamber. An annealing process is performed after the evaporation to improve the thin-film structure and optoelectronic properties.

Abstract: The present invention discloses a transparent conductive nanostructured thin-film by oblique-angle deposition and method of the same. An electron beam system is utilized to evaporate the target source. Evaporation substrate is disposed on a plurality of adjustable sample stage. Multiple gas control valve and heat source is provided to control the gas flow and temperature within the process chamber. An annealing process is performed after the evaporation to improve the thin-film structure and optoelectronic properties.

Abstract: Method for the light emitting diode (LED) having the nanorods-like structure is provided. The LED employs the nanorods are subsequently formed in a longitudinal direction by the etching method and the PEC method. In addition, the plurality of the nanorods is arranged in an array so that provide the LED having much greater brightness and higher light emission efficiency than the conventional LED.

Abstract: A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.

Abstract: Method for the light emitting diode (LED) having the nanorods-like structure is provided. The LED employs the nanorods are subsequently formed in a longitudinal direction by the etching method and the PEC method. In addition, the plurality of the nanorods is arranged in an array so that provide the LED having much greater brightness and higher light emission efficiency than the conventional LED.