Abstract: An anti-interference touch sensing structure includes a first substrate, a plurality of touch sensing units and at least a first anti-interference spot. The touch sensing units are coplanarly disposed on the first substrate, and a first interval region is formed between the adjacent touch sensing units. The first anti-interference spot is disposed within the first interval region.

Abstract: An anti-interference touch display panel comprises a color filter substrate, an active matrix transistor substrate, a display functional layer, a plurality of touch-sensing units and at least one first anti-interference spot. The active matrix transistor substrate is disposed corresponding to the color filter substrate. The display functional layer is disposed between the color filter substrate and the active matrix transistor substrate. The touch-sensing units are coplanarly disposed on the color filter substrate, and a first interval region is formed between the adjacent-touch sensing units. The first anti-interference spot is disposed within the first interval region.

Abstract: An organic electroluminescent touch panel includes a protection unit, a plurality of touch-sensing units, at least one first anti-interference spot, a substrate, a first electrode layer, an organic layer stack and a second electrode layer. The touch-sensing units are coplanarly disposed on the protection unit. A first interval region is formed between the adjacent touch-sensing units. The first anti-interference spot is disposed within the first interval region. The substrate is disposed corresponding to the protection unit. The first electrode layer is disposed on the substrate, the organic layer stack is disposed on the first electrode layer, and the second electrode layer is disposed on the organic layer stack. The first electrode layer, the organic layer stack and the second electrode layer are disposed within the space formed by the protection unit and the substrate.

Abstract: An optoelectronic modulation stack includes a substrate, a plurality of touch sensing units, at least a first anti-interference spot and a nano-structural layer. The touch sensing units are coplanarly disposed on the substrate, and a first interval region is formed between the adjacent touch sensing units. The first anti-interference spot is disposed within the first interval region, and the width of the first anti-interference spot is substantially less than that of the substrate or touch sensing unit. The nano-structural layer is disposed below the first anti-interference spot and includes a plurality of nano structures. When the light passes through the nano structures and the first anti-interference spot, the optical characteristic of the light is changed.

Abstract: A pressure sensible textile has at least a high-resistance conducting area and two groups of low-resistance conducting wefts or warps contacting the high-resistance area directly. The two groups of low-resistance conducting wefts or warps cross each other and do not contact with each other directly. Furthermore, two scanning circuits can be electrically connected to the two groups of low-resistance conducting wefts or warps. Then, a controller is added to the two scanning circuits to obtain a pressure sensible device.

Abstract: A magnetic trigger mechanism is provided. The magnetic trigger mechanism operates in conjunction with a plurality of magnetic sensors. The magnetic trigger mechanism includes: a magnet; a body, with its one side provided with a recess and its other side located near the plurality of magnetic sensors; and a moveable section, provided in the recess in a movable manner, comprising an accommodating space for restraining the magnet therein.

Abstract: A magnetic trigger mechanism is provided. The magnetic trigger mechanism operates in conjunction with a plurality of magnetic sensors. The magnetic trigger mechanism includes: a magnet; a body, with its one side provided with a recess and its other side located near the plurality of magnetic sensors; and a moveable section, provided in the recess in a movable manner, comprising an accommodating space for restraining the magnet therein.

Abstract: A low voltage bandgap reference circuit includes a positive temperature coefficient circuit unit, a negative temperature coefficient circuit unit and a load unit, wherein the positive temperature coefficient circuit unit comprises a first differential operational amplifier, a first, second and third transistor, a first resistor, a first and second diode, and the negative temperature coefficient circuit unit includes a second differential operational amplifier, a fourth, fifth and sixth transistor, a second resistor and a third diode. The low voltage bandgap reference circuit provides a current having a positive temperature coefficient characteristics and a current having a negative temperature coefficient characteristics to flow through the load in order to generate a stable reference voltage less affected by the temperature. Therefore, it avoids the problems of the low voltage bandgap reference circuit that can not be activated at low voltage.

Abstract: A tube coupling device includes a coupling member having a lower casing and an upper housing and a peripheral flange extended between the casing and the housing, a water guide plate is engaged into the housing and has one or more off-center passages, a partition member is engaged in the housing and includes a pathway for the water to flow from the water guide plate and into the casing, and the partition member includes an inclined inner peripheral surface formed around an upper recess for defining an inner peripheral projection and for engaging with the water guide plate and for anchoring and retaining the water guide plate in the housing, a receptacle is engaged in the casing for preventing the materials in the coupling member from being released into the water.

Abstract: A method for forming graphene nanoribbons includes: (a) dispersing carbon nanotubes in a solvent to obtain a nanotube-dispersing solution; (b) adding an oxidant into the nanotube-dispersing solution to obtain a reaction solution; and (c) microwave heating the reaction solution and longitudinally unzipping the carbon nanotubes to form graphene nanoribbons.

Abstract: A transfer printing apparatus includes a mold, a stamper, a pressing roller and a curing unit. The mold has a first surface with first and second concavities, the second concavity has first and second planes, the first plane is perpendicular to the first surface, and the second plane is inclined to the first surface. The stamper having a second surface is disposed in the first concavity. The first and second surfaces are coplanar, and the second surface has transfer printing microstructures. The first and second surfaces are suitable for coated an adhesive layer. The pressing roller presses a base film onto the adhesive layer, such that the adhesive layer is integrated with the base film. The curing unit cures the adhesive layer on the base film, such that a taper corresponding to the second concavity and optical microstructures corresponding to the transfer printing microstructures are formed on the adhesive layer.

Abstract: A pixel array substrate includes a substrate, a plurality of thin-film transistors disposed on the substrate, a first insulating layer covering the thin-film transistors and the substrate, a common electrode disposed on the first insulating layer, a second insulating layer covering the first insulating layer and the common electrode, and a plurality of pixel electrodes disposed on the second insulating layer. Each thin-film transistor includes a drain electrode. The first insulating layer includes a plurality of first openings exposing the drain electrodes respectively. The second insulating layer includes a plurality of second openings exposing the first openings respectively. Each pixel electrode is electrically connected to each drain electrode respectively through each first opening and each second opening. The first insulating layer includes a thickness between 1 micron and 5 microns.

Abstract: The present invention provides a pixel structure including a substrate, a thin-film transistor disposed on the substrate, a first insulating layer covering the thin-film transistor and the substrate, a common electrode, a connecting electrode, a second insulating layer, and a pixel electrode. The thin-film transistor includes a drain electrode. The first insulating layer has a first opening exposing the drain electrode. The common electrode and the connecting electrode are disposed on the first insulating layer. The connecting electrode extends into the first opening to be electrically connected to the drain electrode. The connecting electrode is electrically insulated from the common electrode. The second insulating layer covers the first insulating layer, the common electrode, the connecting electrode, and has a second opening exposing the connecting electrode. The pixel electrode is disposed on the second insulating layer and electrically connected to the connecting electrode through the second opening.

Abstract: A high-speed data transmission structure includes first and second electronic units and an input/output bus. The input/output bus is electrically connected to the first and second electronic units, and includes a clock signal line and N data lines, where N is an even integer. The data lines are divided into first and second data signal line groups, each provided with the same number of data lines. In a transmit mode, the first electronic unit generates and transmits a clock signal to the clock data line, and generates output signals at each clock period of the clock signal. The output signals consist of N/2 data signals lasting for two clock periods of the clock signal, and the first and second data signal line groups alternatively receive the output signals. The second electronic unit simultaneously performs a receive mode to fetch and latch the data signals according to the clock signal.

Abstract: A magnetic trigger mechanism is provided. The magnetic trigger mechanism operates in conjunction with a plurality of magnetic sensors. The magnetic trigger mechanism includes: a magnet; a body, with its one side provided with a recess and its other side located near the plurality of magnetic sensors; and a moveable section, provided in the recess in a movable manner, comprising an accommodating space for restraining the magnet therein.

Abstract: A magnetic trigger mechanism is provided. The magnetic trigger mechanism operates in conjunction with a plurality of magnetic sensors. The magnetic trigger mechanism includes: a magnet; a body, with its one side provided with a recess and its other side located near the plurality of magnetic sensors; and a moveable section, provided in the recess in a movable manner, comprising an accommodating space for restraining the magnet therein.

Abstract: The present invention provides a pixel structure including a substrate, a thin-film transistor disposed on the substrate, a first insulating layer covering the thin-film transistor and the substrate, a common electrode, a connecting electrode, a second insulating layer, and a pixel electrode. The thin-film transistor includes a drain electrode. The first insulating layer has a first opening exposing the drain electrode. The common electrode and the connecting electrode are disposed on the first insulating layer. The connecting electrode extends into the first opening to be electrically connected to the drain electrode. The connecting electrode is electrically insulated from the common electrode. The second insulating layer covers the first insulating layer, the common electrode, the connecting electrode, and has a second opening exposing the connecting electrode. The pixel electrode is disposed on the second insulating layer and electrically connected to the connecting electrode through the second opening.

Abstract: A low voltage bandgap reference circuit includes a positive temperature coefficient circuit unit, a negative temperature coefficient circuit unit and a load unit, wherein the positive temperature coefficient circuit unit comprises a first differential operational amplifier, a first, second and third transistor, a first resistor, a first and second diode, and the negative temperature coefficient circuit unit includes a second differential operational amplifier, a fourth, fifth and sixth transistor, a second resistor and a third diode. The low voltage bandgap reference circuit provides a current having a positive temperature coefficient characteristics and a current having a negative temperature coefficient characteristics to flow through the load unit, whereby generate a stable reference voltage thereon, which the stable reference voltage is less affected by the temperature. Therefore, it avoids the problems of the low voltage bandgap reference circuit can not be activated at low voltage.

Abstract: A magnetic trigger mechanism is provided. The magnetic trigger mechanism operates in conjunction with a plurality of magnetic sensors. The magnetic trigger mechanism includes: a magnet; a body, with its one side provided with a recess and its other side located near the plurality of magnetic sensors; and a moveable section, provided in the recess in a movable manner, comprising an accommodating space for restraining the magnet therein.