Abstract: A detection apparatus includes a substrate which includes a plurality of pixels arranged in a matrix and adapted to generate pixel signals, a plurality of drive lines arranged in a column direction and each connected in common to a plurality of pixels in a row direction, a plurality of data lines arranged in the row direction and each connected in common to a plurality of pixels in the column direction, connection terminals smaller in number than the data lines, and a multiplexer unit provided between the connection terminals and the data lines; a read circuit provided with a reset switch for supplying a constant potential to the connection terminals and connected to the connection terminals; a drive circuit adapted to control driving of the plurality of pixels; and a control circuit adapted to supply a control signal to the substrate and the read circuit.

Abstract: An active matrix panel includes a gate line connected to control electrodes of a plurality of transistors; and a drive circuit supplying the gate line with a conducting voltage and a non-conducting voltage. The drive circuit includes a shift register including a plurality of shift register unit circuits connected to each other, and a demultiplexer including a plurality of demultiplexer unit circuits into which output signals of the shift register unit circuits are input. The demultiplexer unit circuit includes a first transistor for supplying the gate line with the conducting voltage, and a second transistor for supplying the gate line with the non-conducting voltage. The first transistor is changed from a non-conducting state into a conducting state when the second transistor is in the conducting state.

Abstract: In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected in a contact hole formed in a protection layer and an interlayer insulating layer, which are disposed between the switch elements and the electrodes, the method includes forming insulating members over the interlayer insulating layer between the electrodes in contact with the interlayer insulating layer, forming an impurity semiconductor film covering the insulating members and the electrodes, and forming a coating layer covering an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference within the contact hole.

Abstract: A detection device includes conversion elements, each including a first electrode disposed on a substrate, a semiconductor layer disposed on the first electrode, an impurity semiconductor layer disposed on the semiconductor layer and including at least a first region and a second region, and a second electrode disposed on the first region of the impurity semiconductor layer in contact with the impurity semiconductor layer. Sheet resistance in the second region disposed at a position where the impurity semiconductor layer is not contacted with the second electrode is less than sheet resistance in the first region.

Abstract: A radiation detection apparatus includes a scintillator, a photoelectric conversion unit, and a grid for removing scattered radiation. The photoelectric conversion unit includes a plurality of pixels arranged in a two-dimensional array on a substrate. Each pixel is configured to convert visible light output from the scintillator into an electric signal. The grid, the substrate, the photoelectric conversion unit, and the scintillator are disposed in this order from a radiation-incident side of the radiation detection apparatus to an opposite side thereof. In this radiation detection apparatus in which the scintillator is disposed on the side opposite to the radiation-incident side, scattered radiation is effectively removed.

Abstract: A method of manufacturing a radiation detection apparatus including a photoelectric conversion element that includes a first electrode placed above a substrate, a semiconductor layer placed on the first electrode, and a second electrode placed on the semiconductor layer includes forming the second electrode by removing a portion of an electrode layer formed over the semiconductor layer, the portion being located on an end section of the semiconductor layer. The method includes forming an insulating layer such that the insulating layer covers a portion of the semiconductor layer that is not covered by the second electrode. The method further includes forming a third electrode on at least one portion of the insulating layer such that the insulating layer is interposed between the third electrode and the end section of the semiconductor layer.

Abstract: A radiation imaging apparatus has a pixel region arranged on a substrate. Arranged in a matrix pattern in the pixel region are pixels, each pixel including a conversion element which converts radiation to electrical charges, and a switching element which is connected to the conversion element therein. The radiation imaging apparatus has, in a region outside the pixel region of the substrate, an intersection at which a signal line connected to the switching element and a bias line connected to the conversion element intersects. At the intersection, a semiconductor layer is arranged between the signal line and the bias line, and a carrier blocking portion is arranged between the semiconductor layer and the signal line.

Abstract: A semiconductor apparatus including a substrate, a pixel array on the substrate, first and second conductive pads between which the substrate locates is provided. The apparatus also comprises an insulating layer arranged between the substrate and the first conductive pad; a third conductive pad arranged between the substrate and the insulating layer; a first conductive member which passes through the insulating layer and connects the first and third conductive pads to each other; and a second conductive member which passes through the substrate and connects the second and third conductive pads to each other. The pixel array further comprises a conductive line connected to circuit elements included in pixels aligned in a row or column direction. The first conductive pad is connected to the conductive line in an interval between the pixels.

Abstract: A radiation detection apparatus includes a scintillator configured to convert incident radiation into visible light, a photoelectric conversion unit and an electrically conductive member. The photoelectric conversion unit includes a two-dimensional array of pixels arranged on a substrate. Each pixel is configured to convert the visible light into an electric signal. The electrically conductive member is supplied with a fixed potential. The electrically conductive member, the substrate, the photoelectric conversion unit, and the scintillator are disposed in this order from the radiation-incident side of the radiation detection apparatus to the opposite side.

Abstract: A detection apparatus includes conversion elements and switch elements disposed below the conversion elements; insulating layers are disposed between the conversion elements and switch elements. Each conversion element includes a first electrode corresponding to a switch element. A second electrode extends over the plurality of conversion elements; and a semiconductor layer formed between the first electrodes and the second electrode extends over the plurality of conversion elements. Insulating layers include first regions located immediately below the first electrodes and a second region located between the first regions. A third electrode is disposed in the second region and between the insulating layers. The third electrode is supplied with a potential that sets a potential of a part where the second region is in contact with the semiconductor layer to a value between a potential of the second electrode and a potential of the first electrode.

Abstract: In an image pickup apparatus including a plurality of pixels arranged a matrix of rows and columns, a correction unit performs a correction process based on an electric signal output via a first switch element of a particular pixel and a correction electric signal output via a second switch element of the particular pixel. A correction image signal based on the correction electric signal output via the second switch element is acquired in a period that partially overlaps in time a period in which an image signal based on the electric signal output via the first switch element is acquired. When the electric signal associated with the image signal is output for the particular pixel, the second switch element of the particular pixel is controlled to be in an on-state over a period during which the first switch element of the particular pixel is in an off-state.

Abstract: The object of the invention is to realize a light radiation-detecting apparatus including a step of preparing a matrix array including a substrate, an insulating layer arranged on the substrate, a plurality of pixels arranged on the insulating layer, wherein the pixel includes a conversion element converting an incident radiation into an electric signal, and connection electrode arranged at a periphery of the plurality of pixels, fixing a flexible supporting member for covering the plurality of pixels to the matrix array at a side opposite to the substrate, and releasing the substrate from the matrix array.

Abstract: A detection apparatus includes a transistor disposed on a substrate, a conversion element disposed above the transistor and connected to the transistor, a capacitor connected in parallel with conversion element to the transistor, the capacitor including, between the substrate and the conversion element, an ohmic contact part connected to the conversion element, a semiconductor part connected to the ohmic contact part, and an electrically conductive part disposed at a location opposite to the semiconductor part and the ohmic contact part via an insulating layer, and a potential supplying unit configured to selectively supply a first electric potential to the electrically conductive part to accumulate charge carriers in the semiconductor part and a second electric potential to the electrically conductive part to deplete the semiconductor part. The detection apparatus configured in the above-described manner is capable of controlling pixel capacitance thereby achieving a high signal-to-noise ratio.

Abstract: A detection apparatus includes a conversion element; a transistor which includes a semiconductor layer including a first channel region and a second channel region, a first gate electrode, and a second gate electrode; a first drive wiring which is connected to the first gate electrode; a second drive wiring which is connected to the second gate electrode; a first conduction voltage supply unit which supplies the first conduction voltage to the first driving wiring; a second conduction voltage supply unit which supplies the second conduction voltage to the second driving wiring; and a selection unit which selects any one of a first connection between the second drive wiring and the first conduction voltage supply unit and a second connection between the second drive wiring and the second conduction voltage supply unit.

Abstract: A stacked-type detection apparatus includes a plurality of pixels arranged in a matrix having row and column directions. Each pixel includes a conversion element configured to convert radiation or light into an electric charge, and a switch element configured to output an electric signal corresponding to the electric charge. A driving line is connected to switch elements arranged in the row direction, and a signal line is connected to switch elements arranged in the column direction. In each pixel, the conversion element is disposed above the switch element. The signal line is formed by a conductive layer embedded in an insulating layer located below an uppermost surface portion of a main electrode of the switch element located below an uppermost surface portion of the driving line located below the conversion element.

Abstract: A radiation detection apparatus comprises a plurality of pixels each including a conversion element which converts incident radiation into a charge, a switching element which transfers the charge, and an interlayer insulation film disposed between the conversion element and the switching element, a gate line to drive the switching element, and a signal line located to intersect with the gate line and configured to read out the charge transferred from the switching element, wherein Ca??0×?×S/d and 7d?P/2 is satisfied, where P is a pixel pitch, Ca is a sum total of coupling capacitances between the signal line and the gate line, S is an overlapping area of the signal line and the conversion element, d is a thickness of the interlayer insulation film, ? is a relative dielectric constant of the interlayer insulation film, and ?0 is a vacuum dielectric constant.

Abstract: A detection apparatus includes a driving circuit unit in which a plurality of unit circuits each including a first circuit that supplies conducting voltage of a switch element of a pixel based on voltage included in a clock signal to a driving wire in accordance with an initiation signal and a second circuit that supplies non-conducting voltage of the switch element to the driving wire in accordance with a termination signal are provided for the plurality of corresponding driving wires and a control unit that supplies the clock signal to the driving circuit unit. The control unit supplies control voltage to the plurality of unit circuits, and each of the plurality of unit circuits further includes a third circuit that continues to supply the non-conducting voltage to the corresponding driving wire in accordance with the control voltage.

Abstract: In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected in a contact hole formed in a protection layer and an interlayer insulating layer, which are disposed between the switch elements and the electrodes, the method includes forming insulating members over the interlayer insulating layer between the electrodes in contact with the interlayer insulating layer, forming an impurity semiconductor film covering the insulating members and the electrodes, and forming a coating layer covering an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference within the contact hole.

Abstract: In a method of manufacturing a detection device including a plurality of pixels arrayed on a substrate, the pixels each including a switch element and a conversion element including an impurity semiconductor layer disposed on an electrode, which is disposed above the switch element, which is isolated per pixel, and which is made of a transparent conductive oxide joined to the switch element, and further including an interlayer insulating layer, which is made of an organic material, which is disposed between the switch elements and the electrodes, and which covers the switch elements, the method includes insulating members each made of an inorganic material and disposed to cover the interlayer insulating layer between adjacent two of the electrodes in contact with the interlayer insulating layer, and forming an impurity semiconductor film covering the insulating members and the electrodes and becoming the impurity semiconductor layer.

Abstract: A method is provided for manufacturing a high-performance plane-type detector without the increase in cost or decrease in yield accompanying the increase in the number of masks. The method includes the first step of forming a first electrode and a control electrode from a first electroconductive film deposited on a substrate, the second step of depositing an insulating film and a semiconductor film in that order after the first step, the third step of depositing an impurity semiconductor film and a second electroconductive film in that order after the second step, and forming a common electrode wire and a first electroconductive member from the second electroconductive film, and the fourth step of forming with the same mask a second electrode and a second electroconductive member from a transparent electroconductive oxide film formed after the third step, and impurity semiconductor layers from the impurity semiconductor film.