Abstract: A semiconductor apparatus including a substrate, a pixel array on the substrate, first and second conductive pads between which the substrate locates is provided. The apparatus also comprises an insulating layer arranged between the substrate and the first conductive pad; a third conductive pad arranged between the substrate and the insulating layer; a first conductive member which passes through the insulating layer and connects the first and third conductive pads to each other; and a second conductive member which passes through the substrate and connects the second and third conductive pads to each other. The pixel array further comprises a conductive line connected to circuit elements included in pixels aligned in a row or column direction. The first conductive pad is connected to the conductive line in an interval between the pixels.

Abstract: A radiation detecting apparatus includes a scintillator, a plurality of photoelectric conversion elements, and a substrate having a first surface opposing the scintillator and a second surface opposite from the first surface. The substrate, the photoelectric conversion elements and the scintillator are arranged in this order from the side of the radiation detecting apparatus where radiation enters, and the second surface includes a plurality of depressions arranged in orthogonal projection areas where orthogonal projections of the plurality of projected photoelectric conversion elements are positioned and projections parts of which are positioned in the orthogonal projection areas and the remaining areas other than the parts of which are positioned between the orthogonal projection areas.

Abstract: A matrix substrate which realizes high operation speed and high reliability and which is capable of obtaining a high-quality image while the number of connection terminals is limited is provided. The matrix substrate includes pixels arranged in a matrix, N driving lines arranged in a row direction, P connection terminals where P is less than N, a demultiplexer which is disposed between the connection terminals and the driving lines and which includes first polycrystalline semiconductor TFTs and first connection terminals. The demultiplexer further includes second polycrystalline semiconductor TFTs and the second control lines used to maintain the driving lines to have non-selection voltages which bring the pixels to non-selection states between one of the connection terminals and two or more of the driving lines.

Abstract: A detection apparatus includes conversion elements and switch elements disposed below the conversion elements; insulating layers are disposed between the conversion elements and switch elements. Each conversion element includes a first electrode corresponding to a switch element. A second electrode extends over the plurality of conversion elements; and a semiconductor layer formed between the first electrodes and the second electrode extends over the plurality of conversion elements. Insulating layers include first regions located immediately below the first electrodes and a second region located between the first regions. A third electrode is disposed in the second region and between the insulating layers. The third electrode is supplied with a potential that sets a potential of a part where the second region is in contact with the semiconductor layer to a value between a potential of the second electrode and a potential of the first electrode.

Abstract: A radiation detection apparatus includes a scintillator configured to convert incident radiation into visible light, a photoelectric conversion unit and an electrically conductive member. The photoelectric conversion unit includes a two-dimensional array of pixels arranged on a substrate. Each pixel is configured to convert the visible light into an electric signal. The electrically conductive member is supplied with a fixed potential. The electrically conductive member, the substrate, the photoelectric conversion unit, and the scintillator are disposed in this order from the radiation-incident side of the radiation detection apparatus to the opposite side.

Abstract: A radiation detection apparatus includes a scintillator, a photoelectric conversion unit, and a grid for removing scattered radiation. The photoelectric conversion unit includes a plurality of pixels arranged in a two-dimensional array on a substrate. Each pixel is configured to convert visible light output from the scintillator into an electric signal. The grid, the substrate, the photoelectric conversion unit, and the scintillator are disposed in this order from a radiation-incident side of the radiation detection apparatus to an opposite side thereof. In this radiation detection apparatus in which the scintillator is disposed on the side opposite to the radiation-incident side, scattered radiation is effectively removed.

Abstract: In a radiation detecting apparatus of the invention, plural pixels are arranged, and the pixel has a conversion element converting a radiation into an electric signal and a switching element connected to the conversion element. The conversion element includes a first electrode disposed on a first surface of an insulating substrate, a second electrode disposed on the first electrode, and a semiconductor layer disposed between the first electrode and the second electrode. The first electrode is made of a light-transmitting conductive material which transmits light emitted from a light source, and the first electrode is formed form a light transmitting electroconductive material transmitting light emitted form a light source disposed on a second surface of the insulating substrate opposite to the first surface. The switching element has a light shielding member which prevents incidence of the light from the light source to the switching element.

Abstract: A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.

Abstract: A stacked-type detection apparatus includes a plurality of pixels arranged at small intervals in row and column directions and has small signal line capacitance that allows a high-speed driving operation. Each pixel includes a conversion element configured to convert radiation or light into an electric charge and a switch element disposed on an insulating substrate. A driving line is disposed on the insulating substrate and is connected to switch elements arranged in the row direction; and a signal line is connected to switch elements arranged in the column direction. Each conversion element is disposed above a corresponding switch element. The driving line is realized using a conductive layer embedded in an insulating layer located below an uppermost surface portion of the driving line located below an uppermost surface portion of a main electrode of the switch element located below the conversion element.

Abstract: A stacked-type detection apparatus includes a plurality of pixels arranged in a matrix having row and column directions. Each pixel includes a conversion element configured to convert radiation or light into an electric charge, and a switch element configured to output an electric signal corresponding to the electric charge. A driving line is connected to switch elements arranged in the row direction, and a signal line is connected to switch elements arranged in the column direction. In each pixel, the conversion element is disposed above the switch element. The signal line is formed by a conductive layer embedded in an insulating layer located below an uppermost surface portion of a main electrode of the switch element located below an uppermost surface portion of the driving line located below the conversion element.

Abstract: A stacked-type detection apparatus including a plurality of pixels arranged at small intervals is configured to have low capacitance associated with signal lines and/or driving lines. With this novel configuration, small time constant and high-speed driving capability can be achieved in the signal lines and/or driving lines. The plurality of pixels in the detection apparatus are arranged in a row direction and a column direction on an insulating substrate. Each pixel includes a conversion element and a switch element, the conversion element is disposed above the switch element. A driving line disposed below the conversion elements is connected to switch elements arranged in the row direction, and a signal line is connected to switch elements arranged in the column direction. The signal line includes a conductive layer embedded in an insulating member, the insulating member is disposed in a layer lower than an uppermost surface portion of the driving line.

Abstract: A radiation imaging apparatus comprises a pixel region, on an insulating substrate 100, including a plurality of pixels arranged in a matrix, each pixel having a conversion element 101 that converts radiation into electric charges and a switching element 102 connected to the conversion element 101. The conversion element 101 has an upper electrode layer 119, a lower electrode layer 115, a semiconductor layer 117 arranged between the upper electrode layer 119 and the lower electrode layer 115. The upper electrode layer 119 or the lower electrode layer 115 has an opening 200 at least within a region where the semiconductor layer 117 is arranged.

Abstract: Pixels including a photoelectric conversion element 1, a signal transfer TFT (thin film transistor) 2 electrically connected to the photoelectric conversion element, and a reset TFT 3 electrically connected to the photoelectric conversion element and for applying a bias to the photoelectric conversion element are two-dimensionally disposed on the insulating substrate, and the photoelectric conversion element 1, signal transfer TFT 2, and reset TFT 3 are electrically connected through a common contact hole 9. A source or drain electrode of the signal transfer TFT 2 and the source or drain electrode of the reset TFT 3 are formed from a common electroconductive layer.

Abstract: A detection apparatus comprising a substrate; a switching element arranged over the substrate and including a plurality of electrodes; a conductive line arranged over the substrate and electrically connected to a first electrode of the plurality of electrodes of the switching element; and a conversion element including a semiconductor layer arranged over the switching element and the conductive line and arranged between two electrodes, one electrode of the two electrodes being electrically connected to a second electrode of the plurality of electrodes of the switching element, is provided. The one electrode of the conversion element is arranged over the switching element and the conductive line through a space formed between the one electrode and the first electrode of the switching element or between the one electrode and the conductive line.

Abstract: In an image pickup apparatus including a plurality of pixels arranged a matrix of rows and columns, a correction unit performs a correction process based on an electric signal output via a first switch element of a particular pixel and a correction electric signal output via a second switch element of the particular pixel. A correction image signal based on the correction electric signal output via the second switch element is acquired in a period that partially overlaps in time a period in which an image signal based on the electric signal output via the first switch element is acquired. When the electric signal associated with the image signal is output for the particular pixel, the second switch element of the particular pixel is controlled to be in an on-state over a period during which the first switch element of the particular pixel is in an off-state.

Abstract: A radiation imaging apparatus comprises a pixel region, on an insulating substrate 100, including a plurality of pixels arranged in a matrix, each pixel having a conversion element 101 that converts radiation into electric charges and a switching element 102 connected to the conversion element 101. The conversion element 101 has an upper electrode layer 119, a lower electrode layer 115, a semiconductor layer 117 arranged between the upper electrode layer 119 and the lower electrode layer 115. The upper electrode layer 119 or the lower electrode layer 115 has an opening 200 at least within a region where the semiconductor layer 117 is arranged.

Abstract: The present invention aims to provide an imaging apparatus capable of reducing image unevenness even if a protective layer including a polarized solvent is used. The imaging apparatus of the present invention includes a plurality of pixels each having a conversion element and a TFT connected to the conversion element, a protective layer disposed over the plurality of pixels, a plurality of bias lines each electrically connected to each of the conversion elements, and a plurality of signal lines each electrically connected to each of the TFT. Then, the plurality of bias lines and the plurality of signal lines are alternately disposed at a predetermined interval within a region in the protective layer. Then, the plurality of bias lines is commonly connected through a connecting wiring on the outside of the region in the protective layer, and the connecting wiring is disposed to cross the plurality of signal lines.

Abstract: Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.

Abstract: A radiation imaging apparatus comprises a pixel region, on an insulating substrate 100, including a plurality of pixels arranged in a matrix, each pixel having a conversion element 101 that converts radiation into electric charges and a switching element 102 connected to the conversion element 101. The conversion element 101 has an upper electrode layer 119, a lower electrode layer 115, a semiconductor layer 117 arranged between the upper electrode layer 119 and the lower electrode layer 115. The upper electrode layer 119 or the lower electrode layer 115 has an opening 200 at least within a region where the semiconductor layer 117 is arranged.

Abstract: In a semiconductor device having a plurality of thin film transistors and matrix wiring lines formed on a substrate, the matrix wiring lines are electrically connected via resistors in order to prevent electrostatic destructions during a panel manufacture process and improve a manufacture yield.