Abstract: Provided are a method for preparing a polyetherketoneketone and a polyetherketoneketone prepared thereby, wherein, at the time of a polymerization reaction, nitrogen gas is blown into a liquid reaction medium while stirring, thereby quickly removing hydrochloric acid, which is a by-product generated during the reaction, and preventing aggregation of resin particles, thus suppressing the generation of scales.

Abstract: Disclosed herein is an electrochromic device including an active layer in which a catalyst facilitating oxidation-reduction reaction is homogeneously dispersed. The electrochromic device includes at least one active layer to reversibly exhibit a transparent state upon hydrogenation and a reflective state upon dehydrogenation, wherein the active layer includes a catalyst to facilitate a rate of reversible conversion between the transparent state and the reflective state.

Abstract: A display device is provided. The display device includes a transparent display panel; and an optical switching element arranged on the transparent display panel and configured to be switched to one of a transmissive state, a non-transmissive state, and a reflective state, wherein the optical switching element includes a non-transmission layer formed to contact the transparent display panel and configured to switch to the transmissive state or the non-transmissive state, and a reflection layer formed on a first side of the non-transmission layer and configured to switch to the transmissive state or the reflective state.

Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

Abstract: A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing a second impurity; and a gap passivation layer located between the first region and the second region on the semiconductor substrate, wherein the first conductive semiconductor layer is also on the gap passivation layer.

Abstract: Disclosed herein is an electrochromic device having a structure in which atoms of an electrolytic layer and an ion storage layer are mixed with each other. The electrochromic device includes an active layer configured to provide a transparent state by a protonation and a reflective state by a deprotonation, an ion storage layer which stores a proton, an electrolytic layer which is provided between the active layer and the ion storage layer and used a medium through which the proton is moved, and a mixed layer having constituent elements of the ion storage layer and the electrolytic layer.

Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

Abstract: Disclosed herein is an electrochromic device having a structure in which atoms of an electrolytic layer and an ion storage layer are mixed with each other. The electrochromic device includes an active layer configured to provide a transparent state by a protonation and a reflective state by a deprotonation, an ion storage layer which stores a proton, an electrolytic layer which is provided between the active layer and the ion storage layer and used a medium through which the proton is moved, and a mixed layer having constituent elements of the ion storage layer and the electrolytic layer.

Abstract: A display device is provided. The display device includes a transparent display panel; and an optical switching element arranged on the transparent display panel and configured to be switched to one of a transmissive state, a non-transmissive state, and a reflective state, wherein the optical switching element includes a non-transmission layer formed to contact the transparent display panel and configured to switch to the transmissive state or the non-transmissive state, and a reflection layer formed on a first side of the non-transmission layer and configured to switch to the transmissive state or the reflective state.

Abstract: Disclosed herein is an electrochromic device including an active layer in which a catalyst facilitating oxidation-reduction reaction is homogeneously dispersed. The electrochromic device includes at least one active layer to reversibly exhibit a transparent state upon hydrogenation and a reflective state upon dehydrogenation, wherein the active layer includes a catalyst to facilitate a rate of reversible conversion between the transparent state and the reflective state.

Abstract: A solar cell includes an optical absorption layer; a buffer layer on the optical absorption layer, the buffer layer having a band gap energy gradient; and a transparent electrode layer on the buffer layer, wherein a band gap energy of a lower surface of the buffer layer is higher than a band gap energy of an upper surface of the buffer layer.

Abstract: A photoelectric device that reduces optical loss, reduces recombination loss of carriers, and can be manufactured by using a simplified process is provided. The photoelectric device includes a semiconductor substrate, a first semiconductor stack on a first surface of the semiconductor substrate and having a first conductivity, and a second semiconductor stack on the first surface of the semiconductor substrate and having a second conductivity opposite to the first conductivity. Edge portions of the first and second semiconductor stacks face each other with an insulating portion therebetween.

Abstract: A solar cell includes a semiconductor substrate, a first intrinsic semiconductor layer and a second intrinsic semiconductor layer on the semiconductor substrate, the first intrinsic semiconductor layer and the second intrinsic semiconductor layer being spaced apart from each other, a first conductive semiconductor layer and a second conductive semiconductor layer respectively disposed on the first intrinsic semiconductor layer and the second intrinsic semiconductor layer, and a first electrode and a second electrode, each including a bottom layer on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, the bottom layer including a transparent conductive oxide, and an intermediate layer on the bottom layer, the intermediate layer being including copper.

Abstract: A photovoltaic device and a method of manufacturing the same are disclosed. In one embodiment, the device includes i) a semiconductor substrate, ii) a first conductive semiconductor layer formed on a first region of the semiconductor substrate and iii) a first transparent conductive layer formed on the first conductive semiconductor layer. The device may further include i) a second conductive semiconductor layer formed on a second region of the semiconductor substrate, ii) a second transparent conductive layer formed on the second conductive semiconductor layer and iii) a gap passivation layer interposed between i) the first layers and ii) the second layers, wherein the gap passivation layer has a thickness greater than the sum of the thicknesses of the first layers.

Abstract: A solar cell including a crystalline semiconductor substrate having a first conductive type; a first doping layer on a front surface of the substrate and being doped with a first conductive type impurity; a front surface antireflection film on the front surface of the substrate; a back surface antireflection film on a back surface of the substrate; an intrinsic semiconductor layer, an emitter, and a first auxiliary electrode stacked on the back surface antireflection film and the substrate; a second doping layer on the back surface of the substrate and being doped with the first impurity; an insulating film on the substrate and including an opening overlying the second doping layer; a second auxiliary electrode in the opening and overlying the second doping layer; a first electrode on the first auxiliary electrode; and a second electrode on the second auxiliary electrode and being separated from the first electrode.

Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

Abstract: A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing a second impurity; and a gap passivation layer located between the first region and the second region on the semiconductor substrate, wherein the first conductive semiconductor layer is also on the gap passivation layer.

Abstract: A solar cell includes a base substrate having a first surface and a second surface opposite the first surface, the base substrate including a crystalline semiconductor and being configured to have solar light incident on the first surface, a doping pattern on a first portion of the second surface, the doping pattern including a first dopant, a first doping layer on a second portion of the second surface, the first doping layer including a second dopant, and the first and second portions of the second surface being different from each other, a first electrode on the first doping layer, and a second electrode on the doping pattern.

Abstract: A solar cell and a method of manufacturing the solar cell, the solar cell including a first surface configured to receive incident sunlight and having a concavo-convex pattern, a substantially flat second surface opposite to the first surface, a first doped layer formed as a crystalline silicon layer having a first dopant, and a second doped layer formed as an amorphous silicon layer having a second dopant. The processes for forming these layers, with the exception of forming the first doped layer, are performed at a low temperature. Accordingly, reflectivity of sunlight may be minimized, a high terminal voltage may be generated, and a wafer including the solar cell can be kept from being bent.

Abstract: The solar cell includes a substrate, a semiconductor layer, a first doped pattern and a second doped pattern. The substrate has a first surface adapted to receive solar light and a second surface opposite to the first surface. The semiconductor layer includes an insulating pattern formed on a first area of the second surface of the substrate and a semiconductor pattern formed on a second area of the second surface of the substrate in which the insulating pattern is not formed. The first doped pattern and the second doped pattern are formed either in or on the semiconductor pattern.