Abstract: An exemplary embodiment of the present invention provides a method for manufacturing a solar cell, which includes: forming a first semiconductor layer on a first surface of a light-absorbing layer, forming a second semiconductor layer on a second surface of the light-absorbing layer, forming a first transparent conductive layer having one X-ray diffraction peak on the first semiconductor layer in a first direction, forming a second transparent conductive layer having one X-ray diffraction peak on the second semiconductor layer in a second direction opposite to the first direction, forming a first electrode on the first transparent conductive layer in the first direction and forming a second electrode on the second transparent conductive layer in the second direction, in which at least one of the first transparent conductive layer and the second transparent conductive layer is formed at about 180 to about 220° C.

Abstract: A solar cell includes a semiconductor substrate including a first conductive type, a first amorphous silicon thin film layer disposed on the semiconductor substrate and a second amorphous silicon thin film layer including a second conductive type and disposed on the first amorphous silicon thin film layer. The first amorphous silicon thin film layer includes a first intrinsic silicon thin film layer, a second intrinsic silicon thin film layer facing the semiconductor substrate while interposing the first intrinsic silicon thin film layer therebetween and a first low concentration silicon thin film layer including the second conductive type and disposed between the first intrinsic silicon thin film layer and the second intrinsic silicon thin film layer.

Abstract: A method of forming an electrode, by which the resistance of the electrode can be reduced, and a method of manufacturing a solar cell using the method of forming an electrode are provided. The electrode forming method includes coating conductive paste on a substrate, forming a metal layer by drying the conductive paste or heating the same at low temperature, and annealing the metal layer by Joule heating using the metal layer by applying an electric field to the metal layer.

Abstract: A solar cell is provided with a hetero-junction front structure (e.g., P/N or P/I/N) and is further provided in a back portion of thereof with a passivation layer having a plurality of openings defined therethrough. A BSF-forming binder material and a back face electrode are provided contacting the back surface and are fired to thereby bind the back face electrode to the structure and to form a BSF region extending from the openings of the passivation layer.