Abstract: The circuit configuration has a memory array, a memory access controller, a control unit, and an input/output circuit. The control unit outputs a control signal simultaneously to the memory access controller and to the input/output circuit. When the control signal is received, the input/output circuit outputs data to the memory access controller via the data bus. When the control signal is received, the memory access controller stores the data present on the data bus in memory cells of the memory array. Owing to different geometric arrangements and different electrical capacitances, differences in propagation time of the control signals may occur on the path from the control unit to the memory access controller and from the control unit to the input/output circuit. For this purpose, a delay circuit or delay line is provided on the signal path to the memory access controller which brings about a delay of the control signal. This enables precise synchronization of the writing of data into the memory array.

Abstract: An integrated memory is described which has a memory cell array with column lines and row lines. A row access controller serves for activating one of the row lines and for controlling a deactivation operation. An input of a control unit is connected to a signal terminal for a signal that, in the event of a read access to one of the memory cells, defines the beginning of data outputting to a point outside the memory cell array. The data output is synchronized with a clock signal. In this case, the signal is adjustable depending on an operating frequency of the memory. An output signal of the control unit serves for triggering the deactivation operation of one of the row lines after a write access. Therefore, in the event of a write access, a comparatively high data throughput is possible even at different operating frequencies of the integrated memory.

Abstract: Data transfer is effected on an internal and/or on an external transfer path with or in a semiconductor component, such as a semiconductor memory. A first multiplexer/demultiplexer codes a data sequence by defining a current level and a voltage level for a data signal. The coded sequence is then transferred on the transfer path synchronously with a clock signal and is decoded in a second multiplexer/demultiplexer by evaluation of the received current level and of the received voltage level. From this, the transferred data sequence is determined.

Abstract: A pedal (2), in particular for a motor vehicle, has a pedal arm (6) which can be deflected at its first end region (8) by a force (4), in particular a foot force, is mounted at its second end region (10) in a manner such that it can pivot about a pivot spindle (18) mounted in a housing (16), and is acted upon in a manner such that it can be pivoted back into an initial position by a restoring spring element (20) which surrounds the pivot spindle (18). In this arrangement, the restoring spring element (20) is supported on a first lever arm (36) of a pivotably mounted lever (38). The second lever arm (44) of the lever (38) bears via a friction body (50) against a friction surface (56). The friction surface (56) in turn can be pivoted about the pivot spindle (18) of the pedal arm (6) and is arranged on the second end region (10) of the pedal arm (6).

Abstract: Integrated circuits, in particular memory chips of the DDR SDRAM type, are tested in a parallel manner. In order to prevent the circuits from being driven relative to one another during a test operation, an input terminal that is already connected to a channel of an automatic test machine anyway is connected to a switching device, by which the output drivers can be turned off in a manner dependent on the control signal that can be fed in at the input terminal. The switching device preferably contains a demultiplexer and also a multiplexer. The demultiplexer can be driven by a test control signal that is additionally generated besides the test control signal. The input terminal is connected to a tester channel anyway during test operation, with the result that no additional external outlay arises.

Abstract: The integrated memory has a first address path, via which the address terminals are connected to first selection lines of a first group and which has corresponding first lines and a first decoder circuit. In addition, the integrated memory has a second address path, via which the address terminals are connected to first selection lines of a second group and which has corresponding second lines and a second decoder circuit. The first decoder circuit is faster than the second decoder circuit. The first lines have a longer signal propagation time than the second lines.

Abstract: A circuit configuration includes two signal path sections that are used to program the delay of a signal path, in particular in DRAMs. The two signal path sections have different delays and can be driven in parallel at the input end. The two signal path sections can be connected to an output terminal via a multiplexer. A selection circuit includes two signal path sections which are connected between supply voltage potentials. The selection circuit has two complimentary transistors which are connected in series and has source-end programmable elements. These transistors can be driven by complimentary control signals. This permits the delay to be programmed flexibly with little expenditure on circuitry.

Abstract: The voltage pump for generating a boosted output voltage has a switch-on control circuit. The switch-on control includes a transistor that is connected between a terminal for feeding in a supply voltage and the terminal for tapping off the boosted output voltage. After the voltage pump has started to operate, the boosted output voltage is decoupled from the supply voltage by the transistor. A changeover switch forwards the respective higher of the output voltage or supply voltage to the substrate terminal and gate terminal of the transistor. The switch-on control enables early provision of a boosted output voltage in conjunction with reliable start-up operation of the voltage pump, while the additional outlay on circuitry is minimized.

Abstract: The integrated circuit has an activation decoder whose outputs are connected to the inputs of a command decoder. When an activation signal is at a first logic level, the activation decoder produces at its outputs a command supplied to it from command inputs. When the activation signal is at a second logic level, the activation decoder produces a deactivation command at its outputs irrespective of the command supplied to it from the command inputs. The command decoder does not activate any of its outputs when the deactivation command is being supplied to its inputs. The command decoder activates one of its outputs in each case when a different command is supplied to its inputs.

Abstract: An integrated memory has memory cells which are each connected to a row line to select one of the memory cells and to a column line to read or write a data signal. A row access controller is used to activate one of the row lines to select one of the memory cells and to control a precharging operation to precharge one of the row lines. A precharge command initiates a precharging operation. The precharging operation for an activated row line is triggered by the row access controller when the reading or writing of a data signal has been finished and when a defined time interval, during which the row line must at least be activated, has elapsed since the activation. As a result, a precharging operation of the activated row line is controlled in a self-adjusting manner. A method of operating an integrated memory is also provided.

Abstract: The integrated circuit has a first decoder unit and a second decoder unit D2 connected in parallel with the latter, which decode the input signals fed to them in a different way in each case. The inputs of the second decoder unit D2 are connected to a respective one of the inputs of the first decoder unit D1. n lines L1 to be selected are each connected to a respective one of the outputs of the two decoder units D1, D2. Via their outputs, the first decoder unit D1 and the second decoder unit D2 determine, in a first operating mode and in a second operating mode, respectively, the potentials of the lines L1 to be selected.

Abstract: A read-write mode control method is described in which a waiting time during a reading process can be shortened by conducting a read instruction with auto-precharging in a first circuit part. The first circuit part is separate from a second circuit part used for conducting the write instruction, since a memory controller does not need to insert any wait cycles between a write instruction and an associated activate signal.

Abstract: An integrated memory has a first operating mode, in which, during each write access, only one of the two global amplifiers is active and transmits a datum via one of the local amplifiers to the corresponding bit line. Moreover, the memory has a second operating mode, in which, during each write access, both global amplifiers are simultaneously active and transmit a common datum via in each case at least one of the local amplifiers to the corresponding bit lines.

Abstract: An integrated memory has memory cells which are each connected to a row line to select one of the memory cells and to a column line to read or write a data signal. A row access controller is used to activate one of the row lines to select one of the memory cells and to control a precharging operation to precharge one of the row lines. A precharge command initiates a precharging operation. The precharging operation for an activated row line is triggered by the row access controller when the reading or writing of a data signal has been finished and when a defined time interval, during which the row line must at least be activated, has elapsed since the activation. As a result, a precharging operation of the activated row line is controlled in a self-adjusting manner. A method of operating an integrated memory is also provided.

Abstract: A read-write mode control method is described in which a waiting time during a reading process can be shortened by conducting a read instruction with auto-precharging in a first circuit part. The first circuit part is separate from a second circuit part used for conducting the write instruction, since a memory controller does not need to insert any wait cycles between a write instruction and an associated activate signal.

Abstract: The memory has a bidirectional address counting unit C1; S, which performs a counting operation for the purpose of generating internal column addresses from an external column address A7 . . . 0. In this case, the counting direction is dependent on the burst operating mode and on an address bit A1 of the external column address. Moreover, the memory has a transformation unit C2; SR2, which forwards partial addresses A2 . . . 1′; PA3 . . . 0′ generated by the address counting unit C1; S either unchanged or incremented by the value 1 to the second column decoder CDEC2, in a manner dependent on the burst operating mode and a further address bit A0 of the external column address A7 . . . 0.

Abstract: A pedal (2), in particular for a motor vehicle, has a pedal arm (6) which can be deflected at its first end region (8) by a force (4), in particular a foot force, is mounted at its second end region (10) in a manner such that it can pivot about a pivot spindle (18) mounted in a housing (16), and is acted upon in a manner such that it can be pivoted back into an initial position by a restoring spring element (20) which surrounds the pivot spindle (18). In this arrangement, the restoring spring element (20) is supported on a first lever arm (36) of a pivotably mounted lever (38). The second lever arm (44) of the lever (38) bears via a friction body (50) against a friction surface (56). The friction surface (56) in turn can be pivoted about the pivot spindle (18) of the pedal arm (6) and is arranged on the second end region (10) of the pedal arm (6).

Abstract: The invention describes a memory configuration having a matrix memory in which an evaluation circuit is provided which, when selecting column lines, takes into account which physical row line is being driven.

Abstract: Each redundant unit of an integrated memory device is assigned respective programmable elements, comparison units, a code converting unit, a logic unit and a multiplexer. Each multiplexer has a first switching state, in which it connects outputs of the first comparison units to first inputs of the logic unit, and a second switching state, in which it connects outputs of the code converting unit to the first inputs of the logic unit. In the second switching state of the multiplexers, each redundant unit is assigned a different address in the unprogrammed state of the programmable elements. Therefore, redundant units can be selected individually for test purposes.

Abstract: The bearing module (10) is used to support an actuating element which can be displaced counter to the force of at least one return spring (32) with a force hysteresis due to friction. With previous bearing modules, complex friction mechanisms which ensure the desired hysteresis are provided in addition to the return springs. To reduce the number of parts necessary for a bearing module, the proposal is that the force should be transmitted from the return spring (32) via a friction element (24) which slides on a friction surface (28) assigned to the return spring (32) during the displacement, either tensioning the spring (32) or being returned by it. The direct production of hysteresis in the return mechanism reduces the number of components and hence the costs of production for the bearing module (10).