Patents by Inventor Christopher Jahnes
Christopher Jahnes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8541854Abstract: The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.Type: GrantFiled: January 13, 2012Date of Patent: September 24, 2013Assignee: International Business Machines CorporationInventors: John M. Cotte, Nils D. Hoivik, Christopher Jahnes, Minhua Lu, Hongqing Zhang
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Publication number: 20120103534Abstract: The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.Type: ApplicationFiled: January 13, 2012Publication date: May 3, 2012Applicant: International Business Machines CorporationInventors: JOHN M. COTTE, Nils D. Hoivik, Christopher Jahnes, Minhua Lu, Hongqing Zhang
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Patent number: 8163584Abstract: The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.Type: GrantFiled: April 11, 2008Date of Patent: April 24, 2012Assignee: International Business Machines CorporationInventors: Minhua Lu, Nils D. Hoivik, Christopher Jahnes, John M. Cotte, Hongqing Zhang
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Patent number: 7738753Abstract: An optoelectronic circuit fabrication method and integrated circuit apparatus fabricated therewith. Integrated circuits are fabricated with an integral optical coupling transition to efficiently couple optical energy from an optical fiber to an integrated optical waveguide on the integrated circuit. Layers of specific materials are deposited onto a semiconductor circuit to support etching of a trench to receive an optical coupler that performs proper impedance matching between an optical fiber and an on-circuit optical waveguide that extends part way into the transition channel. A silicon based dielectric that includes at least a portion with a refractive index substantially equal to a section of the optical fiber is deposited into the etched trench to create the optical coupler. Silicon based dielectrics with graded indices are also able to be used. Chemical mechanical polishing is used finalize preparation of the optical transition and integrated circuit.Type: GrantFiled: June 30, 2008Date of Patent: June 15, 2010Assignee: International Business Machines CorporationInventors: Solomon Assefa, Christopher Jahnes, Yurii Vlasov
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Publication number: 20090324162Abstract: An optoelectronic circuit fabrication method and integrated circuit apparatus fabricated therewith. Integrated circuits are fabricated with an integral optical coupling transition to efficiently couple optical energy from an optical fiber to an integrated optical waveguide on the integrated circuit. Layers of specific materials are deposited onto a semiconductor circuit to support etching of a trench to receive an optical coupler that performs proper impedance matching between an optical fiber and an on-circuit optical waveguide that extends part way into the transition channel. A silicon based dielectric that includes at least a portion with a refractive index substantially equal to a section of the optical fiber is deposited into the etched trench to create the optical coupler. Silicon based dielectrics with graded indices are also able to be used. Chemical mechanical polishing is used finalize preparation of the optical transition and integrated circuit.Type: ApplicationFiled: June 30, 2008Publication date: December 31, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Solomon Assefa, Christopher Jahnes, Yurii Vlasov
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Publication number: 20090258455Abstract: The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.Type: ApplicationFiled: April 11, 2008Publication date: October 15, 2009Applicant: International Business Machines CorporationInventors: John M. Cotte, Nils D. Hoivik, Christopher Jahnes, Minhua Lu, Hongqing Zhang
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Patent number: 7581314Abstract: A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.Type: GrantFiled: February 21, 2006Date of Patent: September 1, 2009Assignee: International Business Machines CorporationInventors: Hariklia Deligianni, Panayotis Andricacos, L. Paivikki Buchwalter, John M. Cotte, Christopher Jahnes, Mahadevaiyer Krishnan, John H. Magerlein, Kenneth Stein, Richard P. Volant, James A. Tornello, Jennifer Lund
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Publication number: 20080067683Abstract: Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.Type: ApplicationFiled: October 12, 2007Publication date: March 20, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John Cotte, Nils Hoivik, Christopher Jahnes, Robert Wisnieff
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Publication number: 20080066860Abstract: Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.Type: ApplicationFiled: October 12, 2007Publication date: March 20, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John Cotte, Nils Hoivik, Christopher Jahnes, Robert Wisnieff
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Publication number: 20080048305Abstract: A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials.” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed.Type: ApplicationFiled: October 31, 2007Publication date: February 28, 2008Inventors: Gareth Hougham, S. Chey, James Doyle, Xiao Liu, Christopher Jahnes, Paul Lauro, Nancy LaBianca, Michael Rooks
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Publication number: 20070259516Abstract: A multilevel air-gap-containing interconnect structure and a method of fabricating the same are provided. The multilevel air-gap-containing interconnect structure includes a collection of interspersed line levels and via levels, with via levels comprising conductive vias embedded in one or more dielectric layers in which the dielectric layers are solid underneath and above line features in adjacent levels, and perforated between line features. The line levels contain conductive lines and an air-gap-containing dielectric. A solid dielectric bridge layer, containing conductive contacts and formed by filling in a perforated dielectric layer, is disposed over the collection of interspersed line and via levels.Type: ApplicationFiled: May 8, 2006Publication date: November 8, 2007Applicant: International Business Machines CorporationInventors: Christopher Jahnes, Satyanarayana Nitta, Kevin Petrarca, Katherine Saenger
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Patent number: 7212091Abstract: A microelectromechanical switch including: at least one pair of actuator electrodes; at least one input electrode and at least one output electrode for input and output, respectively, of a radio frequency signal; and a beam movable by an attraction between the at least one pair of actuator electrodes, the movable beam having at least a portion electrically connected to the at least one input electrode and to the at least one output electrode when moved by the attraction between the at least one pair of actuator electrodes to make an electrical connection between the at least one input and output electrodes; wherein the at least one pair of actuator electrodes are electrically isolated from each of the at least one input and output electrodes. The microelectromechanical switch can be configured in single or multiple-poles and/or single or multiple throws.Type: GrantFiled: February 8, 2005Date of Patent: May 1, 2007Assignee: International Business Machines CoprorationInventors: Panayotis Constantinou Andricacos, L. Paivikki Buchwalter, Hariklia Deligianni, Robert A. Groves, Christopher Jahnes, Jennifer L. Lund, Michael Meixner, David Earle Seeger, Timothy D. Sullivan, Ping-Chuan Wang
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Patent number: 7202764Abstract: A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.Type: GrantFiled: July 8, 2003Date of Patent: April 10, 2007Assignee: International Business Machines CorporationInventors: Hariklia Deligianni, Panayotis Andricacos, L. Paivikki Buchwalter, John M. Cotte, Christopher Jahnes, Mahadevaiyer Krishnan, John H. Magerlein, Kenneth Stein, Richard P. Volant, James A. Tornello, Jennifer Lund
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Publication number: 20060189134Abstract: Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.Type: ApplicationFiled: February 24, 2005Publication date: August 24, 2006Applicant: International Business Machines CorporationInventors: John Cotte, Nils Hoivik, Christopher Jahnes, Robert Wisnieff
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Publication number: 20060178004Abstract: A method of patterning and releasing chemically sensitive low k films without the complication of a permanent hardmask stack, yielding an unaltered free-standing structure is provided. The method includes providing a structure including a Si-containing substrate having in-laid etch stop layers located therein; forming a chemically sensitive low k film and a protective hardmask having a pattern atop the structure; transferring the pattern to the chemically sensitive low k film to provide an opening that exposes a portion of the Si-containing substrate; and etching the exposed portion of the Si-containing substrate through the opening to provide a cavity in the Si-containing substrate in which a free-standing low k film structure is formed, while removing the hardmask. In accordance with the present invention, the etching comprises a XeF2 etch gas.Type: ApplicationFiled: February 8, 2005Publication date: August 10, 2006Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John Cotte, Nils Hoivik, Christopher Jahnes
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Publication number: 20060164194Abstract: A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.Type: ApplicationFiled: February 21, 2006Publication date: July 27, 2006Inventors: Hariklia Deligianni, Panayotis Andricacos, L. Paivikki Buchwalter, John Cotte, Christopher Jahnes, Mahadevaiyer Krishnan, John Magerlein, Kenneth Stein, Richard Volant, James Tornello, Jennifer Lund
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Publication number: 20060108675Abstract: Apparatus and methods are provided for enabling wafer-scale encapsulation of microelectromechanical (MEM) devices (e.g., resonators, filters) to protect the MEMs from the ambient and to provide either a controlled ambient or a reduced pressure. In particular, methods for wafer-scale encapsulation of MEM devices are provided, which enable encapsulation of MEM devices under desired ambient conditions that are not determined by the deposition conditions of a sealing process in which MEM release via holes are sealed or pinched-off, and which prevent sealing material from being inadvertently deposited on the MEM device during the sealing process.Type: ApplicationFiled: November 19, 2004Publication date: May 25, 2006Inventors: Evan Colgan, Bruce Furman, Christopher Jahnes
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Publication number: 20060017533Abstract: A micro-electromechanical (MEM) RF switch provided with a deflectable membrane (60) activates a switch contact or plunger (40). The membrane incorporates interdigitated metal electrodes (70) which cause a stress gradient in the membrane when activated by way of a DC electric field. The stress gradient results in a predictable bending or displacement of the membrane (60), and is used to mechanically displace the switch contact (30). An RF gap area (25) located within the cavity (250) is totally segregated from the gaps (71) between the interdigitated metal electrodes (70). The membrane is electrostatically displaced in two opposing directions, thereby aiding to activate and deactivate the switch.Type: ApplicationFiled: August 26, 2002Publication date: January 26, 2006Inventors: Christopher Jahnes, Jennifer Lund, Katherine Saenger, Richard Volant
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Publication number: 20050156695Abstract: A microelectromechanical switch including: at least one pair of actuator electrodes; at least one input electrode and at least one output electrode for input and output, respectively, of a radio frequency signal; and a beam movable by an attraction between the at least one pair of actuator electrodes, the movable beam having at least a portion electrically connected to the at least one input electrode and to the at least one output electrode when moved by the attraction between the at least one pair of actuator electrodes to make an electrical connection between the at least one input and output electrodes; wherein the at least one pair of actuator electrodes are electrically isolated from each of the at least one input and output electrodes. The microelectromechanical switch can be configured in single or multiple-poles and/or single or multiple throws.Type: ApplicationFiled: February 8, 2005Publication date: July 21, 2005Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Panayotis Andricacos, L. Buchwalter, Hariklia Deligianni, Robert Groves, Christopher Jahnes, Jennifer Lund, Michael Meixner, David Seeger, Timothy Sullivan, Ping-Chuan Wang
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Patent number: 6876282Abstract: A microelectromechanical switch including: at least one pair of actuator electrodes; at least one input electrode and at least one output electrode for input and output, respectively, of a radio frequency signal; and a beam movable by an attraction between the at least one pair of actuator electrodes, the movable beam having at least a portion electrically connected to the at least one input electrode and to the at least one output electrode when moved by the attraction between the at least one pair of actuator electrodes to make an electrical connection between the at least one input and output electrodes; wherein the at least one pair of actuator electrodes are electrically isolated from each of the at least one input and output electrodes. The microelectromechanical switch can be configured in single or multiple-poles and/or single or multiple throws.Type: GrantFiled: May 17, 2002Date of Patent: April 5, 2005Assignee: International Business Machines CorporationInventors: Panayotis Constantinou Andricacos, L. Paivikki Buchwalter, Hariklia Deligianni, Robert A. Groves, Christopher Jahnes, Jennifer L. Lund, Michael Meixner, David Earle Seeger, Timothy D. Sullivan, Ping-Chuan Wang