Patents by Inventor Christopher Jahnes
Christopher Jahnes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20050037604Abstract: A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to interconnect structures containing multiple wiring levels, and is compatible with Dual Damascene Back End of the Line (BEOL) processing.Type: ApplicationFiled: September 24, 2004Publication date: February 17, 2005Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Katherina Babich, Roy Carruthers, Timothy Dalton, Alfred Grill, Jeffrey Hedrick, Christopher Jahnes, Ebony Mays, Laurent Perraud, Sampath Purushothaman, Katherine Saenger
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Publication number: 20050024169Abstract: A switch comprising a substrate, an elongated movable part, a pair of electrical contacts disposed at one side of said part, an actuation electrode disposed at the one side of the part and separated from the pair of electrical contacts, wherein the part, the contacts and the electrode are disposed on the substrate, wherein the elongated movable part is arranged and dimensioned such that the part is movable in a generally lateral direction toward the contacts; the movable part includes a central elongated member fixed to a head having an electrical contact disposed at the one side. One end of the movable part is attached to the substrate by means of various anchoring arrangements.Type: ApplicationFiled: August 11, 2004Publication date: February 3, 2005Inventors: Hariklia Deligianni, Christopher Jahnes, Jennifer Lund, Lawrence Larson
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Publication number: 20050007217Abstract: A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400°0 C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.Type: ApplicationFiled: July 8, 2003Publication date: January 13, 2005Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hariklia Deligianni, Panayotis Andricacos, L. Buchwalter, John Cotte, Christopher Jahnes, Mahadevaiyer Krishnan, John Magerlein, Kenneth Stein, Richard Volant, James Tornello, Jennifer Lund
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Patent number: 6758223Abstract: A method for removal of post reactive ion etch by-product from a semiconductor wafer surface or microelectronic composite structure comprising: supplying a reducing gas plasma incorporating a forming gas mixture selected from the group consisting of a mixture of N2/H2 or a mixture of NH3/H2 into a vacuum chamber in which a semiconductor wafer surface or a microelectronic composite structure is supported to form a post-RIE polymer material by-product on the composite structure without significant removal of an organic, low K material which has also been exposed to the reducing gas plasma; and removing the post-RIE polymer material by-product with a wet clean.Type: GrantFiled: June 23, 2000Date of Patent: July 6, 2004Assignee: Infineon Technologies AGInventors: Andy Cowley, Peter Emmi, Timothy Dalton, Christopher Jahnes
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Patent number: 6682786Abstract: A liquid crystal display cell having liquid crystal molecules positioned in a vertical or a substantially vertical alignment is provided. The liquid crystal display cell includes at least two substantially homogeneous fluorinated alignment layers disposed on transparent electrodes; a liquid crystal layer of liquid crystal molecules disposed between the alignment layers; and, a means of applying voltage across the transparent electrodes. Methods for forming these liquid crystal display cells are also provided.Type: GrantFiled: December 7, 1999Date of Patent: January 27, 2004Assignee: IBM CorporationInventors: Shui-Chih Alan Lien, Alessandro C. Callegari, Paul S. Andry, Praveen Chaudhari, James A. Lacey, Sampath Purushothaman, James P. Doyle, Eileen A. Galligan, Richard A. John, John J. Ritsko, Yuhichi Momoi, Christopher Jahnes
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Publication number: 20030214373Abstract: A microelectromechanical switch including: at least one pair of actuator electrodes; at least one input electrode and at least one output electrode for input and output, respectively, of a radio frequency signal; and a beam movable by an attraction between the at least one pair of actuator electrodes, the movable beam having at least a portion electrically connected to the at least one input electrode and to the at least one output electrode when moved by the attraction between the at least one pair of actuator electrodes to make an electrical connection between the at least one input and output electrodes; wherein the at least one pair of actuator electrodes are electrically isolated from each of the at least one input and output electrodes. The microelectromechanical switch can be configured in single or multiple-poles and/or single or multiple throws.Type: ApplicationFiled: May 17, 2002Publication date: November 20, 2003Inventors: Panayotis Constantinou Andricacos, L. Paivikki Buchwalter, Hariklia Deligianni, Robert A. Groves, Christopher Jahnes, Jennifer L. Lund, Michael Meixner, David Earle Seeger, Timothy D. Sullivan, Ping-Chuan Wang
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Patent number: 6639488Abstract: Disclosed is a capacitive electrostatic MEMS RF switch comprised of a lower electrode that acts as both a transmission line and as an actuation electrode. Also, there is an array of one or more fixed beams above the lower electrode that is connected to ground. The lower electrode transmits the RF signal when the top beam or beams are up and when the upper beams are actuated and bent down, the transmission line is shunted to ground ending the RF transmission. A high dielectric constant material is used in the capacitive portion of the switch to achieve a high capacitance per unit area thus reducing the required chip area and enhancing the insertion loss characteristics in the non-actuated state. A gap between beam and lower electrode of less than 1 &mgr;m is incorporated in order to minimize the electrostatic potential (pull-in voltage) required to actuate the switch.Type: GrantFiled: September 7, 2001Date of Patent: October 28, 2003Assignee: IBM CorporationInventors: Hariklia Deligianni, Robert Groves, Christopher Jahnes, Jennifer L. Lund, Panayotis Andricacos, John Cotte, L. Paivikki Buchwalter, David Seeger, Raul E. Acosta
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Publication number: 20030048149Abstract: Disclosed is a capacitive electrostatic MEMS RF switch comprised of a lower electrode that acts as both a transmission line and as an actuation electrode. Also, there is an array of one or more fixed beams above the lower electrode that is connected to ground. The lower electrode transmits the RF signal when the top beam or beams are up and when the upper beams are actuated and bent down, the transmission line is shunted to ground ending the RF transmission. A high dielectric constant material is used in the capacitive portion of the switch to achieve a high capacitance per unit area thus reducing the required chip area and enhancing the insertion loss characteristics in the non-actuated state. A gap between beam and lower electrode of less than 1 &mgr;m is incorporated in order to minimize the electrostatic potential (pull-in voltage) required to actuate the switch.Type: ApplicationFiled: September 7, 2001Publication date: March 13, 2003Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hariklia Deligianni, Robert Groves, Christopher Jahnes, Jennifer L. Lund, Panayotis Andricacos, John Cotte, L. Paivikki Buchwalter, David Seeger, Raul E. Acosta
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Patent number: 6489857Abstract: A micro electromechanical switch has a guidepost formed upon a substrate. A signal transmission line is formed on the substrate, with the signal transmission line having a gap and forming an open circuit. The switch further includes a switch body having a via opening formed therein, with the switch body being movably disposed along an length defined by the guide post. The guidepost is partially surrounded by the via opening.Type: GrantFiled: November 30, 2000Date of Patent: December 3, 2002Assignee: International Business Machines CorporationInventors: Kevin Petrarca, Robert A. Groves, Brian Herbst, Christopher Jahnes, Richard Volant
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Patent number: 6486557Abstract: A multi-level, coplanar copper damascene interconnect structure on an integrated circuit chip includes a first planar interconnect layer on an integrated circuit substrate and having plural line conductors separated by a dielectric material having a relatively low dielectric constant and a relatively low elastic modulus. A second planar interconnect layer on the first planar interconnect layer comprises a dielectric film having an elastic modulus higher than in the first planar interconnect layer and conductive vias therethrough. The vias are selectively in contact with the line conductors. A third planar interconnect layer on the second planar interconnect layer has plural line conductors separated by the dielectric material and selectively in contact with the vias.Type: GrantFiled: February 29, 2000Date of Patent: November 26, 2002Assignee: International Business Machines CorporationInventors: Charles R. Davis, Daniel Charles Edelstein, John C. Hay, Jeffrey C. Hedrick, Christopher Jahnes, Vincent McGahay, Henry A. Nye, III
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Publication number: 20020088476Abstract: A method for removal of post reactive ion etch by-product from a semiconductor wafer surface or microelectronic composite structure comprising:Type: ApplicationFiled: January 10, 2002Publication date: July 11, 2002Applicant: Infineon Technologies North America Corp.Inventors: Andy Cowley, Peter Emmi, Timothy Dalton, Christopher Jahnes
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Publication number: 20020063610Abstract: A micro electromechanical switch has a guidepost formed upon a substrate. A signal transmission line is formed on the substrate, with the signal transmission line having a gap and forming an open circuit. The switch further includes a switch body having a via opening formed therein, with the switch body being movably disposed along an length defined by the guide post. The guidepost is partially surrounded by the via opening.Type: ApplicationFiled: November 30, 2000Publication date: May 30, 2002Inventors: Kevin Petrarca, Robert A. Groves, Brian Herbst, Christopher Jahnes, Richard Volant
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Patent number: 6197364Abstract: This invention provides a method and solution for the electroless deposition of Co(P) with a designed coercivity via the programmed addition of supporting electrolytes comprising such sulfur containing compounds as sulfamic acid, potassium sulfate or sodium sulfate to a solution having a source of cobalt ions, a source of citrate ions, a buffering compound to stabilize the pH of the solution, a source of hypophosphite ions and sufficient hydroxide anions to obtain a pH of between about 7 and 9. The magnetized Co(P) material is useful in, for example, rigid magnetic storage disks, hard bias layers for MR thin film heads and magnetic detector tags.Type: GrantFiled: August 9, 1999Date of Patent: March 6, 2001Assignee: International Business Machines CorporationInventors: Milan Paunovic, Christopher Jahnes
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Patent number: 5729201Abstract: An inexpensive multibit magnetic tag is described which uses an array of amorphous wires in conjunction with a magnetic bias field. The tag is interrogated by the use of a ramped field or an ac field or a combination of the two. The magnetic bias is supplied either by coating each wire with a hard magnetic material which is magnetized or by using magnetized hard magnetic wires or foil strips in proximity to the amorphous wires. Each wire switches at a different value of the external interrogation field due to the difference in the magnetic bias field acting on each wire.Type: GrantFiled: June 29, 1995Date of Patent: March 17, 1998Assignee: International Business Machines CorporationInventors: Christopher Jahnes, Richard Joseph Gambino, Milan Paunovic, Alejandro Gabriel Schrott, Robert Jacob von Gutfeld