Abstract: A method for preparing a fermented food by using a Rhizopus microsporus strain is provided. The method includes the following steps: providing an isolated and purified Rhizopus microsporus strain, and its deposit number is DSM 34400; and inoculating the isolated and purified Rhizopus microsporus strain to a substrate for fermentation to form a fermented food. The substrate includes a legume, a processing residue of a legume, or a combination thereof.

Abstract: In some implementations, one or more semiconductor processing tools may deposit a first dielectric layer on a substrate of a semiconductor device. The one or more semiconductor processing tools may deposit a floating gate on the first dielectric layer. The one or more semiconductor processing tools may deposit a second dielectric layer on the floating gate and on the substrate of the semiconductor device. The one or more semiconductor processing tools may deposit a first control gate on a first portion of the second dielectric layer. The one or more semiconductor processing tools may deposit a second control gate on a second portion of the second dielectric layer, wherein a third portion of the second dielectric layer is between the first control gate and the floating gate and between the second control gate and the floating gate.

Abstract: In some implementations, one or more semiconductor processing tools may form a triple-stacked polysilicon structure on a substrate of a semiconductor device. The one or more semiconductor processing tools may form one or more polysilicon-based devices on the substrate of the semiconductor device, wherein the triple-stacked polysilicon structure has a first height that is greater than one or more second heights of the one or more polysilicon-based devices. The one or more semiconductor processing tools may perform a chemical-mechanical polishing (CMP) operation on the semiconductor device, wherein performing the CMP operation comprises using the triple-stacked polysilicon structure as a stop layer for the CMP operation.

Abstract: A portable electronic charging case, with a compact form-factor, such as for a smart ring or the like, includes a base; a front cover connected to the base and configured to seal an interior of the charging case; a post on the base and in the interior; an antenna disposed within the post; and circuitry connected to the antenna and to a charging port located on the base. The electronic charging case includes advanced functionality, an aesthetic design, and a compact form-factor. The compact form-factor includes an embedded battery, an environmentally sealed design, and a small NFC/Bluetooth antenna. The aesthetic design includes no user-actuated mechanisms on an exterior of the charging case and an intelligent light sensor for illuminating the charging case. The advanced functionality includes the embedded battery, intelligent light sensor, a temperature sensor for monitoring a user, and monitoring techniques working in conjunction with an associated wearable device.

Abstract: A heat conduction device with an inner loop includes a vapor chamber having at least one hole edge and a heat pipe having an outer pipe and an inner pipe. The outer pipe has a closed end and an open end communicating with the hole edge. Two ends of the inner pipe are open. The inner pipe has one end communicating with the vapor chamber through the hole edge and the other end extended along the axial direction of the outer pipe to form at least one port for communicating the closed end of the outer pipe with the inner pipe. The inner pipe is located inside the outer pipe to form a gap annularly. The port communicates with the gap, so that the inner loop is formed between the vapor chamber and the heat pipe.

Abstract: A smart ring includes a battery, memory, processing circuitry, a plurality of sensors, a plurality of antennas, and a battery, each coupled to one another and all enclosed in a casing, wherein the processing circuitry is configured to conserve the battery by any of sending data to the cloud service when an application is open on the user device, sending data to the cloud service when a threshold is crossed, waking up processing or communicating when there is a change in motion detected by the accelerometer.

Abstract: In some implementations, one or more semiconductor processing tools may form a triple-stacked polysilicon structure on a substrate of a semiconductor device. The one or more semiconductor processing tools may form one or more polysilicon-based devices on the substrate of the semiconductor device, wherein the triple-stacked polysilicon structure has a first height that is greater than one or more second heights of the one or more polysilicon-based devices. The one or more semiconductor processing tools may perform a chemical-mechanical polishing (CMP) operation on the semiconductor device, wherein performing the CMP operation comprises using the triple-stacked polysilicon structure as a stop layer for the CMP operation.

Abstract: A semiconductor wafer processing system includes a stocker having an interior surface, a wafer carrier disposed within the stocker, a wafer shelf disposed within the wafer carrier for storing a semiconductor wafer, and a discharge circuit including a first conductor electrically coupled to the wafer shelf and a first current controller electrically coupled to the first conductor and to the interior surface of the stocker.

Abstract: A data storage device includes a substrate including a number of contact pads and a number of passive component packages coupled to the contact pads. The data storage device further includes a memory controller coupled to the substrate, and one or more NAND die stacks coupled to the substrate and in electrical communication with the memory controller. One or more of the passive component packages include a first passive component, a second passive component electrically connected to the first passive component, and a first terminal coupled to the first passive component. The passive component packages further include a second terminal coupled to the second passive component, and a third terminal coupled to a common node of the first passive component and the second passive component.

Abstract: A method for preparing quartz glass with low content of hydroxyl and high purity, includes providing silica powders including hydroxyl groups. The silica powders are dehydroxylated, which includes drying the silica powders at a first temperature, heating the silica powders up to a second temperature and introducing a first oxidizing gas including halogen gas, thereby obtaining first dehydroxylated powders, and heating the first dehydroxylated powders up to a third temperature and introducing a second oxidizing gas including oxygen or ozone, thereby obtaining second dehydroxylated powders. The second dehydroxylated powders are heated up to a fourth temperature to obtain a vitrified body. The vitrified body is cooled to obtain the quartz glass with low content of hydroxyl and high purity. The quartz glass prepared by the above method has low content of hydroxyl and high purity. A quartz glass with low content of hydroxyl and high purity is also provided.

Abstract: In some implementations, one or more semiconductor processing tools may deposit a first dielectric layer on a substrate of a semiconductor device. The one or more semiconductor processing tools may deposit a floating gate on the first dielectric layer. The one or more semiconductor processing tools may deposit a second dielectric layer on the floating gate and on the substrate of the semiconductor device. The one or more semiconductor processing tools may deposit a first control gate on a first portion of the second dielectric layer. The one or more semiconductor processing tools may deposit a second control gate on a second portion of the second dielectric layer, wherein a third portion of the second dielectric layer is between the first control gate and the floating gate and between the second control gate and the floating gate.

Abstract: In some implementations, one or more semiconductor processing tools may form a triple-stacked polysilicon structure on a substrate of a semiconductor device. The one or more semiconductor processing tools may form one or more polysilicon-based devices on the substrate of the semiconductor device, wherein the triple-stacked polysilicon structure has a first height that is greater than one or more second heights of the one or more polysilicon-based devices. The one or more semiconductor processing tools may perform a chemical-mechanical polishing (CMP) operation on the semiconductor device, wherein performing the CMP operation comprises using the triple-stacked polysilicon structure as a stop layer for the CMP operation.

Abstract: A light-emitting diode (LED) includes a substrate, an epitaxial structure, and an electrode structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on the substrate in such order. The electrode structure includes electrodes that are respectively disposed on the first and second semiconductor layers opposite to the substrate. Each electrode has an upper surface that is opposite to the first and second semiconductor layers. The electrode structure also includes an insulating unit that is disposed in each electrode, and that is not exposed from the upper surface of the corresponding electrode.

Abstract: A multiple-piece vacuum-insulated heating tank for use in a water dispenser includes a threaded cover, a thermal insulation cover, and a heating tank body. The threaded cover is mounted on an upper opening of the heating tank body and includes a plastic cover and a protective cover mounted on and around the plastic cover. The thermal insulation cover is fitted in the upper opening and includes an upper cover and a lower cover. The lower cover is cup-shaped; is mounted with a heating tube, a water inlet pipe, a water outlet pipe, a thermowell, a temperature-sensing heat pipe, a heat collector block, and two snap-action thermostats at the bottom side; and has a sidewall formed with a step adjacent to the bottom side. The heating tank not only has a multiple-piece structure that facilitates mass production and maintenance, but also dispenses with electronic temperature control as is conventionally required.

Abstract: A multiple-piece vacuum-insulated heating tank for use in a water dispenser includes a threaded cover, a thermal insulation cover, and a heating tank body. The threaded cover is mounted on an upper opening of the heating tank body and includes a plastic cover and a protective cover mounted on and around the plastic cover. The thermal insulation cover is fitted in the upper opening and includes an upper cover and a lower cover. The lower cover is cup-shaped; is mounted with a heating tube, a water inlet pipe, a water outlet pipe, a thermowell, a temperature-sensing heat pipe, a heat collector block, and two snap-action thermostats at the bottom side; and has a sidewall formed with a step adjacent to the bottom side. The heating tank not only has a multiple-piece structure that facilitates mass production and maintenance, but also dispenses with electronic temperature control as is conventionally required.

Abstract: The present invention discloses a push-type anti-scalding water dispenser faucet having: a faucet main body; a valve core assembly controlling a water output; a press board mechanism driving the valve core assembly to move; a retaining structure allowing the press board mechanism to switch between a locking position and a release position. The water dispenser faucet comprises a disposable finger stall for mounting onto the press board mechanism or a finger of a user.

Abstract: A hinge module includes the two spindles, the two brackets, a gear set and a torque part. The two spindles are spaced apart from each other. The two brackets are respectively connected to a first side of the two spindles, where an installing direction of each of the brackets is perpendicular to an axial direction of each of the spindles. The gear set is disposed at a second side opposite to the first side of the two spindles. The torque part is disposed on the two spindles and is located between the two brackets and the gear set, where each of the brackets is adapted to rotate relative to the torque part with the corresponding spindle, and the gear set is configured to drive the two spindles rotating in opposite directions.