Abstract: An integrated fan-out package includes an integrated circuit, a plurality of semiconductor devices, a first redistribution circuit structure, and an insulating encapsulation. The integrated circuit has an active surface and a rear surface opposite to the active surface. The semiconductor devices are electrically connected the integrated circuit. The first redistribution circuit structure is disposed between the integrated circuit and the semiconductor devices. The first redistribution circuit structure is electrically connected to the integrated circuit and the semiconductor devices respectively. The first redistribution circuit structure has a first surface, a second surface opposite to the first surface, and lateral sides between the first surface and the second surface. The insulating encapsulation encapsulates the integrated circuit and the semiconductor devices and covers the first surface and the second surface of the first redistribution circuit structure.

Abstract: Methods and apparatus for integrating a CMOS image sensor and an image signal processor (ISP) together using an interposer to form a system in package device module are disclosed. The device module may comprise an interposer with a substrate. An interposer contact is formed within the substrate. A sensor device may be bonded to a surface of the interposer, wherein a sensor contact is bonded to a first end of the interposer contact. An ISP may be connected to the interposer, by bonding an ISP contact in the ISP to a second end of the interposer contact. An underfill layer may fill a gap between the interposer and the ISP. A printed circuit board (PCB) may further be connected to the interposer by way of a solder ball connected to another interposer contact. A thermal interface material may be in contact with the ISP and the PCB.

Abstract: A method of manufacturing a semiconductor package structure is provided. A stacked structure formed over the carrier substrate is provided, wherein the stacked structure has a channel with an opening. The stacked structure is immersed into a fluidic molding material to render the fluidic molding material flow into the channel through the openings.

Abstract: In an embodiment, a device includes: a first device including: an integrated circuit device having a first connector; a first photosensitive adhesive layer on the integrated circuit device; and a first conductive layer on the first connector, the first photosensitive adhesive layer surrounding the first conductive layer; a second device including: an interposer having a second connector; a second photosensitive adhesive layer on the interposer, the second photosensitive adhesive layer physically connected to the first photosensitive adhesive layer; and a second conductive layer on the second connector, the second photosensitive adhesive layer surrounding the second conductive layer; and a conductive connector bonding the first and second conductive layers, the conductive connector surrounded by an air gap.

Abstract: Chip package structures are provided. The chip package structure includes a protection layer and a first chip disposed over the protection layer. The chip package structure further includes a first photosensitive layer formed around sidewalls of the first chip and covering a top surface of the first chip and a second chip disposed over the first photosensitive layer. In addition, the first chip and the second chip are separated by the first photosensitive layer.

Abstract: A package structure includes an insulating encapsulation, at least one first chip, a redistribution layer and a bonding layer. The at least one first chip is encapsulated in the insulating encapsulation. The redistribution layer is located on the insulating encapsulation and the at least one first chip and electrically connected to the at least one first chip. The bonding layer mechanically connects the redistribution layer and the at least one first chip.

Abstract: A package structure includes an insulating encapsulation, at least one first chip, a redistribution layer and a bonding layer. The at least one first chip is encapsulated in the insulating encapsulation. The redistribution layer is located on the insulating encapsulation and the at least one first chip and electrically connected to the at least one first chip. The bonding layer mechanically connects the redistribution layer and the at least one first chip.

Abstract: Methods and apparatus for integrating a CMOS image sensor and an image signal processor (ISP) together using an interposer to form a system in package device module are disclosed. The device module may comprise an interposer with a substrate. An interposer contact is formed within the substrate. A sensor device may be bonded to a surface of the interposer, wherein a sensor contact is bonded to a first end of the interposer contact. An ISP may be connected to the interposer, by bonding an ISP contact in the ISP to a second end of the interposer contact. An underfill layer may fill a gap between the interposer and the ISP. A printed circuit board (PCB) may further be connected to the interposer by way of a solder ball connected to another interposer contact. A thermal interface material may be in contact with the ISP and the PCB.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, and an RDL structure. The encapsulant is laterally encapsulating the die. The RDL structure is electrically connected to the die. The RDL structure includes a first dielectric layer, a first RDL, a second dielectric layer and a second RDL. The first dielectric layer is disposed on the encapsulant and the die. The first RDL is embedded in the first dielectric layer. The first RDL includes a first via and a first trace connected to each other. A top surface of the first RDL is coplanar with a top surface of the first dielectric layer. The second dielectric layer is on the first dielectric layer and the first RDL. The second RDL is embedded in the second dielectric layer and includes a second via and a second trace connected to each other. A top surface of the second RDL is coplanar with a top surface of the second dielectric layer. The second via is stacked directly on the first via.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package at least has chip and a redistribution layer. The redistribution layer is disposed on the chip. The redistribution layer includes joining portions having first pads and second pads surrounding the chip. The first pads are arranged around a location of the chip and the second pads are arranged over the location of the chip. The second pads located closer to the chip are narrower than the first pads located further away from the chip.

Abstract: An integrated fan-out package includes an integrated circuit, a plurality of semiconductor devices, a first redistribution circuit structure, and an insulating encapsulation. The integrated circuit has an active surface and a rear surface opposite to the active surface. The semiconductor devices are electrically connected the integrated circuit. The first redistribution circuit structure is disposed between the integrated circuit and the semiconductor devices. The first redistribution circuit structure is electrically connected to the integrated circuit and the semiconductor devices respectively. The first redistribution circuit structure has a first surface, a second surface opposite to the first surface, and lateral sides between the first surface and the second surface. The insulating encapsulation encapsulates the integrated circuit and the semiconductor devices and covers the first surface and the second surface of the first redistribution circuit structure.

Abstract: A semiconductor package has at least one die, a first redistribution layer and a second redistribution layer. The first redistribution layer includes a first dual damascene redistribution pattern having a first via portion and a first routing portion. The second redistribution layer is disposed on the first redistribution layer and over the first die and electrically connected with the first redistribution layer and the first die. The second redistribution layer includes a second dual damascene redistribution pattern having a second via portion and a second routing portion. A location of the second via portion is aligned with a location of first via portion.

Abstract: Chip package structures and methods for forming the same are provided. The chip package structure includes a first protection layer and a first chip disposed over the first protection layer. The chip package structure further includes a first photosensitive layer surrounding the first chip and covering the first chip and a redistribution layer formed over the first photosensitive layer.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, and an RDL structure. The encapsulant is aside the die, and the RDL structure is electrically connected to the die. The RDL structure includes a first dielectric layer and a first RDL. The first dielectric layer is disposed on the encapsulant and the die. The first RDL is embedded in the first dielectric layer. The first RDL includes a seed layer and a conductive layer. The seed layer surrounds sidewalls of the conductive layer, and is disposed between the conductive layer and the first dielectric layer.

Abstract: Chip package structures and methods for forming the same are provided. The chip package structure includes a first protection layer and a first chip disposed over the first protection layer. The chip package structure further includes a first photosensitive layer surrounding the first chip and covering the first chip and a redistribution layer formed over the first photosensitive layer.

Abstract: A method of manufacturing a semiconductor package structure is provided. A stacked structure formed over the carrier substrate is provided, wherein the stacked structure has a channel with an opening. The stacked structure is immersed into a fluidic molding material to render the fluidic molding material flow into the channel through the openings.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package has a first redistribution layer, a first die over the first redistribution layer, a molding compound encapsulating at least one second die and at least one third die disposed on the first redistribution layer, and at least one fourth die and conductive elements connected to the first redistribution layer. Through vias of the first die are electrically connected to through interlayer vias penetrating through the molding compound and are electrically connected to the first redistribution layer. The semiconductor package may further include a second redistribution layer disposed on the molding compound and between the first die, the second die and the third die.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package has a first redistribution layer, a first die over the first redistribution layer, a molding compound encapsulating at least one second die and at least one third die disposed on the first redistribution layer, and at least one fourth die and conductive elements connected to the first redistribution layer. Through vias of the first die are electrically connected to through interlayer vias penetrating through the molding compound and are electrically connected to the first redistribution layer. The semiconductor package may further include a second redistribution layer disposed on the molding compound and between the first die, the second die and the third die.

Abstract: A method of fabricating a three dimensional integrated circuit comprises forming a redistribution layer on a first side of a packaging component, forming a holding chamber in the redistribution layer, attaching an integrated circuit die on the first side of the packaging component, wherein an interconnect bump of the integrated circuit die is inserted into the holding chamber, applying a reflow process to the integrated circuit die and the packaging component and forming an encapsulation layer on the packaging component.

Abstract: A method of multi-chip wafer level packaging comprises attaching a first semiconductor die to a top side of a wafer, forming a first reconfigured wafer by embedding the first semiconductor die into a first photo-sensitive material layer, forming a first group of through assembly vias in the first photo-sensitive material layer, attaching a second semiconductor die to the first photo-sensitive material layer, forming a second photo-sensitive material layer on top of the first photo-sensitive material layer, wherein the second semiconductor die is embedded in the second photo-sensitive material layer and forming a second group of through assembly vias in the second photo-sensitive material layer.