Abstract: Methods for treating pain such as fibromyalgia, comprising administering to a subject in need thereof an effective amount of an adenosine analog, wherein the adenosine analog may be a compound of Formula (I): (I), or a pharmaceutically acceptable salt thereof. Pharmaceutical compositions comprising the adenosine analog for use in treating pain (e.g., fibromyalgia), optionally further comprising Substance P (SP), are also provided.

Abstract: A rotating member of a dental clamping apparatus is movably connected to a body and disposed in a through hole. A hole diameter is located on an inner side of a clamping member and is corresponding to an elastic abutting slope. The clamping member is movably connected to the rotating member. A first blocking member disposed in a first blocking hole is engaged with an annular groove so as to rotate the rotating member relative to the body. A second blocking member disposed in a second blocking hole is engaged with an axial track so as to move the clamping member along an axial direction relative to the body. The rotating member is rotated relative to the body to axially move the clamping member. The elastic abutting slope is abutted against an annular slope so as to resiliently deform the clamping member to change the hole diameter.

Abstract: An abutment assembly includes an abutment, an adjustable buffer member and an adhesive. There is an angle between an extending direction of the abutment and a Z-axis direction, and the angle is greater than or equal to 0 degrees and smaller than or equal to 30 degrees. The adjustable buffer member is closely connected to the abutment having a positioning structure. The adjustable buffer member includes an engaging structure, an inner side wall, a base portion and a grinding portion. The engaging structure is engaged with the positioning structure. The inner side wall has at least one inner annular groove corresponding to the engaging structure. The base portion has a base thickness which is smaller than or equal to 4 mm. The adhesive is connected between the abutment and the adjustable buffer member, and contained in the inner annular groove. The grinding portion is manufactured by the instrument.

Abstract: A healing abutment assembly for disposing on an implant by an auxiliary tool includes a healing abutment and a connecting member. A body includes an accommodating space, a healing surrounding surface, a top surface and a bottom surface. The bottom surface is connected to the implant. The healing surrounding surface is connected between the top surface and the bottom surface. The accommodating space is communicated with the top surface and the bottom surface. An outline of the top surface is formed in a non-circular shape, and the healing surrounding surface is formed in a non-conical shape. A positioning structure is disposed on the top surface and removably connected to the auxiliary tool. The connecting member is removably connected to the body and the implant. The connecting member is passed through the body and disposed in the implant so as to fixedly connect the body to the implant.

Abstract: A method includes applying a first voltage to a first source line of a memory, applying a second voltage to a second source line of the memory, turning on an access transistor of a memory cell of the memory, and performing one of a write operation or a read operation on a metal-ferroelectric-semiconductor (MFS) transistor of the memory cell. Memories on which the method is performed are also disclosed.

Abstract: A method includes applying a first voltage to a first source line of a memory, applying a second voltage to a second source line of the memory, turning on an access transistor of a memory cell of the memory, and performing one of a write operation or a read operation on a metal-ferroelectric-semiconductor (MFS) transistor of the memory cell. Memories on which the method is performed are also disclosed.

Abstract: A surgical suture is provided, which includes a hollow cone and a thread. The cone has a front opening and a rear opening at two opposite ends thereof, wherein a diameter of the front opening is smaller than a diameter of the rear opening. The thread passes through the cone, and integrally includes at least two protrusions thereon, which are separated from each other by a certain distance. Each of the protrusions has a width in a radial direction of the thread, wherein the width is greater than a diameter of the thread, and is smaller than the diameter of the rear opening whereby, with the integrally provided protrusions, the cones can be located on the corresponding positions of the thread.

Abstract: A method for controlling a magnetic memory device is provided. The method includes: applying a first control signal and a second control signal to a ferromagnetic fixed layer and a ferromagnetic free layer of the magnetic memory device respectively, wherein a first voltage level of the first control signal is lower than a second voltage level of the second control signal; sensing a first current signal flowing through the magnetic memory device; and determining a logical state of a first data bit according to the first current signal.

Abstract: A method for controlling a magnetic memory device is provided. The method includes: applying a first control signal and a second control signal to a ferromagnetic fixed layer and a ferromagnetic free layer of the magnetic memory device respectively, wherein a first voltage level of the first control signal is lower than a second voltage level of the second control signal; sensing a first current signal flowing through the magnetic memory device; and determining a logical state of a first data bit according to the first current signal.

Abstract: The invention provides a new use of adenosine analogs for the treatment of pain through activation of neurokinin 1 (NK1) receptor signaling pathway, thereby inducing the activation of activation of M-type potassium channel to induce outward currents. A method and pharmaceutical composition for treating pain comprising an adenonsine analog that activates NK1 receptor signaling, thereby inducing outward current are also provided.

Abstract: Compounds for use in prevention and treatment of neurodegenerative disease and pain are disclosed. In one embodiment of the invention, the compound is selected from the group consisting of N6-[(3-halothien-2-yl)methyl]adenosine, N6-[(4-halothien-2-yl)methyl]adenosine, and N6-[(5-halothien-2-yl)methyl]adenosine. In another embodiment of the invention, the compound is selected from the group consisting of N6-[(2-bromothien-3-yl)methyl]adenosine, N6-[(4-bromothien-3-yl)methyl]adenosine, N6-[(5-bromothien-3-yl)methyl]adenosine N6-[(2-chlorothien-3-yl)methyl]adenosine, N6-[(4-chlorothien-3-yl)methyl]adenosine, and N6-[(5-chlorothien-3-yl)methyl]adenosine. Also disclosed are methods of making and using the same.

Abstract: A communications structure comprises a first semiconductor substrate having a first coil, and a second semiconductor substrate having a second coil above the first semiconductor substrate. Inner edges of the first and second coils define a boundary of a volume that extends below the first coil and above the second coil. A ferromagnetic core is positioned at least partially within the boundary, such that a mutual inductance is provided between the first and second coils for wireless transmission of signals or power between the first and second coils.

Abstract: One method includes forming an anti-ferromagnetic layer on a substrate. A ferromagnetic layer may be formed on the anti-ferromagnetic layer. The ferromagnetic layer includes a first, second and third portions where the second portion is located between the first and third portions. A first ion irradiation is performed to only one portion of the ferromagnetic layer. A second ion irradiation is performed to another portion of the ferromagnetic layer.

Abstract: A magnetoresistive memory has first and second magnetic tunnel junction (MTJ) elements operated differentially, each with a pinned magnetic layer and a free magnetic layer that can have field alignments that are parallel or anti-parallel, producing differential high and low resistance states representing a bit cell value. Writing a high resistance state to an element requires an opposite write current polarity through the pinned and free layers, and differential operation requires that the two MTJ elements be written to different resistance states. One aspect is to arrange or connect the layers in normal and reverse order relative to a current bias source, thereby achieving opposite write current polarities relative to the layers using the same current polarity relative to the current bias source. The differentially operated MTJ elements can supplement or replace single MTJ elements in a nonvolatile memory bit cell array.

Abstract: The disclosure provides a new use of adenosine analogs for the treatment of pain through activation of neurokinin 1 (NK1) receptor signaling pathway, thereby inducing the activation of M-type potassium channel to induce outward currents. A method and pharmaceutical composition for treating pain comprising an adenonsine analog that activates NK1 receptor signaling, thereby inducing outward current are also provided.

Abstract: Magneto-resistive memory bit cells in an array have high or low resistance states storing logic values. During read operations, a bias source is coupled to an addressed memory word, coupling a parameter related to cell resistance to a sense amplifier at each bit position. The sense amplifiers determine whether the parameter value is greater or less than a reference value between the high and low resistance states. The reference value is derived by averaging or splitting a difference of resistances of reference cells at high and/or low resistance states. Bias current is conducted over address lines with varying resistance, due to different distances between the sense amplifiers and addressed memory words, which is canceled by inserting into the comparison circuit a resistance from a dummy addressing array, equal to the resistance of the conductor addressing the selected word line and bit position.

Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.

Abstract: MTJ stack structures for an MRAM device include an MTJ stack having a pinned ferromagnetic layer over a pinning layer, a tunneling barrier layer over the pinned ferromagnetic layer, a free ferromagnetic layer over the tunneling barrier layer, a conductive oxide layer over the free ferromagnetic layer, and an oxygen-based cap layer over the conductive oxide layer.

Abstract: A communications structure comprises a first semiconductor substrate having a first coil, and a second semiconductor substrate having a second coil above the first semiconductor substrate. Inner edges of the first and second coils define a boundary of a volume that extends below the first coil and above the second coil. A ferromagnetic core is positioned at least partially within the boundary, such that a mutual inductance is provided between the first and second coils for wireless transmission of signals or power between the first and second coils.

Abstract: A communications structure comprises a first semiconductor substrate having a first coil, and a second semiconductor substrate having a second coil above the first semiconductor substrate. Inner edges of the first and second coils define a boundary of a volume that extends below the first coil and above the second coil. A ferromagnetic core is positioned at least partially within the boundary, such that a mutual inductance is provided between the first and second coils for wireless transmission of signals or power between the first and second coils.