Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first conductive structure arranged over a substrate. A memory layer is arranged over the first conductive structure, below a second conductive structure, and includes a ferroelectric material. An annealed seed layer is arranged between the first and second conductive structures and directly on a first side of the memory layer. An amount of the crystal structure that includes an orthorhombic phase is greater than about 35 percent.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a first active region extending along a first direction. The semiconductor device also includes a second active region extending along the first direction. The semiconductor device further includes a first gate extending along a second direction perpendicular to the first direction. The first gate has a first segment disposed between the first active region and the second active region. In addition, the semiconductor device includes a first electrical conductor extending along the second direction and across the first active region and the second active region, wherein the first segment of the first gate and the first electrical conductor are partially overlapped to form a first capacitor.

Abstract: A thin film transistor includes an active layer and at least one gate stack. The active layer may be formed using multiple iterations of a unit layer stack deposition process, which includes an acceptor-type oxide deposition process and a post-transition metal oxide deposition process. A surface of each gate dielectric within the at least one gate stack contacts a surface of a respective layer of the oxide of the acceptor-type element so that leakage current of the active layer may be minimized. A source electrode and a drain electrode may contact an oxide layer providing lower contact resistance such as a layer of the post-transition metal oxide or a zinc oxide layer within the active layer.

Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.

Abstract: In some embodiments, the present disclosure relates to an integrated circuit (IC) in which a memory structure comprises an inhibition layer inserted between two ferroelectric layers to create a tetragonal-phase dominant ferroelectric structure. In some embodiments, the ferroelectric structure includes a first ferroelectric layer, a second ferroelectric layer overlying the first ferroelectric layer, and a first inhibition layer disposed between the first and second ferroelectric layers and bordering the second ferroelectric layer. The first inhibition layer is a different material than the first and second ferroelectric layers.

Abstract: An antenna apparatus, a communication apparatus, and a steering adjustment method thereof are provided. The antenna apparatus includes an antenna structure. The antenna structure includes an antenna unit. The antenna unit includes i feeding ports, where i is a positive integer larger than 2. A vector of each of the feeding ports is controlled independently. In the steering adjustment method, a designated direction is determined, where the designated direction corresponds to beam directionality of the antenna structure. In addition, the vectors of the feeding ports of the antenna unit are configured according to the designated direction. Accordingly, the antenna size can be reduced, and beam steering in multiple directions would be achieved.

Abstract: A semiconductor device includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature and a second source/drain feature. The gate insulating layer is located between the gate and the semiconductor structure. The semiconductor structure includes at least one first metal oxide layer, a first oxide layer, and at least one second metal oxide layer. The first oxide layer is located between the first metal oxide layer and the second metal oxide layer. The first source/drain feature and the second source/drain feature are electrically connected with the semiconductor structure.

Abstract: Some embodiments relate to a thin film transistor comprising an active layer over a substrate. An insulator is stacked with the active layer. A gate electrode structure is stacked with the insulator and includes a gate material layer having a first work function and a first interfacial layer. The first interfacial layer is directly between the insulator and the gate material layer, wherein the gate electrode structure has a second work function that is different from the first work function.

Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.

Abstract: An acoustic wave element includes: a substrate; a bonding structure on the substrate; a support layer on the bonding structure; a first electrode including a lower surface on the support layer; a cavity positioned between the support layer and the first electrode and exposing a lower surface of the first electrode; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer, wherein at least one of the first electrode and the second electrode includes a first layer and a second layer that the first layer has a first acoustic impedance and a first electrical impedance, the second layer has a second acoustic impedance and a second electrical impedance, wherein the first acoustic impedance is higher than the second acoustic impedance, and the second electrical impedance is lower than the first electrical impedance.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first conductive structure arranged over a substrate. A memory layer is arranged over the first conductive structure, below a second conductive structure, and includes a ferroelectric material. An annealed seed layer is arranged between the first and second conductive structures and directly on a first side of the memory layer. An amount of the crystal structure that includes an orthorhombic phase is greater than about 35 percent.

Abstract: A micro LED display device includes a micro LED array, a light enhancing layer, a color filter and a polarizer. The micro LED array includes a plurality of micro LEDs, wherein each of the micro LEDs is independently controlled to emit a light. The light enhancing layer is located above the micro LED array, wherein the light enhancing layer includes a plurality of quantum dots. The color filter is located above the light enhancing layer, wherein properties of the light of each of the micro LEDs is converted by each of the quantum dots thereby projecting a plurality of sub-pixel units in the color filter. The polarizer is located above the color filter.

Abstract: A circuit for controlling a memory includes a frequency parameter generator, a clock generator and a memory controller. The frequency parameter generator generates at least one frequency control signal. The clock generator, coupled to the frequency generator, increases or decreases the frequency of a clock signal by a multiple number of times according to the frequency control signal, such that the frequency of the clock signal is adjusted from an initial frequency to a target frequency. The memory controller, coupled to the clock generator, receives the clock signal and controls the memory according to the clock signal.

Abstract: A micro LED display device includes a micro LED array, a light transmission layer, a color filter and a polarizer. The micro LED array includes a plurality of micro LEDs. The light transmission layer is located above the micro LED array. The color filter is located above the light transmission layer. The polarizer is located above the color filter.

Abstract: A circuit for controlling a memory includes a frequency parameter generator, a clock generator and a memory controller. The frequency parameter generator generates at least one frequency control signal. The clock generator, coupled to the frequency generator, increases or decreases the frequency of a clock signal by a multiple number of times according to the frequency control signal, such that the frequency of the clock signal is adjusted from an initial frequency to a target frequency. The memory controller, coupled to the clock generator, receives the clock signal and controls the memory according to the clock signal.

Abstract: A message transmission system, a receiving apparatus, a receiving method and a computer-readable recording medium thereof are provided. The message transmission system includes a transmitting apparatus, a receiving apparatus and a database. The transmitting apparatus transmits a broadcasting message, where the broadcasting message includes an identification code. The receiving apparatus forwards the identification code in response to receiving the broadcasting message. The database provides an intent content corresponding to the identification code without an application identification. The receiving apparatus presents a notification according to the intent content by an operation system (OS) without opening an application corresponding to the application identification in response to receiving the intent content. Accordingly, without installing an application for receiving a push message, the receiving apparatus still can receive the notification, and efficiency of push notification can be improved.

Abstract: A message transmission system, a receiving apparatus, a receiving method and a computer-readable recording medium thereof are provided. The message transmission system includes a transmitting apparatus, a receiving apparatus and a database. The transmitting apparatus transmits a broadcasting message, where the broadcasting message includes an identification code. The receiving apparatus forwards the identification code in response to receiving the broadcasting message. The database provides an intent content corresponding to the identification code without an application identification. The receiving apparatus presents a notification according to the intent content by an operation system (OS) without opening an application corresponding to the application identification in response to receiving the intent content. Accordingly, without installing an application for receiving a push message, the receiving apparatus still can receive the notification, and efficiency of push notification can be improved.

Abstract: A memory test data generating circuit and method for generating a plurality of sets of test data is provided. The plurality of sets of test data is provided to a memory via a plurality of channels by a memory controller and is for testing the memory. The memory test data generating circuit includes: a plurality of counters, generating a plurality of counter values; and a data repetition and combination unit, generating the plurality of sets of test data according to the plurality of counter values, a bit width between the memory test data generating circuit and the memory controller, and a bit width between the memory controller and the memory. The test data of each channel is an identical and periodical data series.

Abstract: Memory space management and memory access control method and apparatus are provided. The method includes: upon receiving an access request, acquiring an access address and an accessor identifier in the access request; checking a current state of a memory space pointed by the access address to obtain a check result, wherein the state of the memory space includes a first state and a second state; determining whether the accessor identifier belongs to an access permission set among a plurality of access permission sets that corresponds to the check result; and generating an instruction according to the check result, wherein the instruction indicates whether or not the accessor is permitted to access the memory space. With the above method, the invention reduces resource waste and system costs.

Abstract: An apparatus for managing a memory having a plurality of command/address pins is provided. The apparatus includes a command generating module and a control module. The command generating module generates a set of target commands. The set of target commands include a plurality of command groups. Each of the command groups corresponds to at least one command/address pin of the plurality of command/address pins. It is known that the memory accesses the set of target commands from the plurality of command/address pins at a target time point. The control module controls the command groups to have different transition times prior to the target time points when the command groups are transmitted on the plurality of command/address pins.