Abstract: A method of making a buffer board of a treadmill includes a sizing step, a shade drying step, a presetting step, a clamping and heat-pressing step, a cooling step, and a die opening step. The method can easily make the desired buffer board adapted to the treadmill and can only change different dies to make buffer boards with different structures when an upper die and a lower die of a die set provide protrusions, flat surfaces or depressed surfaces, thereby reducing the manufacturing cost.

Abstract: A semiconductor device includes a substrate, a gate structure, a sidewall spacer, and an epitaxial layer. The gate structure is disposed on the substrate, and the substrate has at least one recess disposed adjacent to the gate structure. The sidewall spacer is disposed on at least two sides of the gate structure. The sidewall spacer includes a first spacer layer and a second spacer layer, and the first spacer layer is disposed between the gate structure and the second spacer layer. The epitaxial layer is disposed in the recess, and the recess is a circular shaped recess. A distance between an upmost part of the recess and the gate structure is less than a width of the sidewall spacer.

Abstract: A field effect transistor with epitaxial structures includes a fin-shaped structure and a metal gate across the fin-shaped structure. The metal gate includes a pair of recess regions disposed on two sides of the bottom of the metal gate.

Abstract: A field effect transistor (FinFET) device includes a substrate, a fin structure, a shallow trench isolation and a gate structure. The fin structure is formed on a surface of the substrate and includes a base fin structure and an epitaxial fin structure formed on the base fin structure. The shallow trench isolation structure is formed on the surface of the substrate and includes a peripheral zone and a concave zone. The peripheral zone physically contacts with the fin structure. The gate structure is disposed on the epitaxial fin structure perpendicularly. A method of fabricating the aforementioned field effect transistor is also provided.

Abstract: A semiconductor device includes a substrate, a gate structure, a sidewall spacer, and an epitaxial layer. The gate structure is disposed on the substrate, and the substrate has at least one recess disposed adjacent to the gate structure. The sidewall spacer is disposed on at least two sides of the gate structure. The sidewall spacer includes a first spacer layer and a second spacer layer, and the first spacer layer is disposed between the gate structure and the second spacer layer. The epitaxial layer is disposed in the recess, and the recess is a circular shaped recess. A distance between an upmost part of the recess and the gate structure is less than a width of the sidewall spacer.

Abstract: A fitness auxiliary device includes first and second support boards, a holding rod, a top rod, a pull rod, a caster seat, a buckle member, and casters. The top rod is transversely disposed at upper ends of inclined surfaces of the first and second support boards. The holding rod is located under the top rod. The pull rod is transversely disposed at the lower ends of the inclined surfaces and located under the holding rod. The caster seat is fixedly connected to the middle of the pull rod. A front end of the caster seat is provided with the buckle member. Two ends of an elastic rope are provided with buckle heads for connecting the buckle hole and a slide board or a flat board, such that the fitness auxiliary device can be used variously.

Abstract: A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fin together define a cavity. A piece of a semiconductor compound is formed from the cavity, wherein the upper portion of the piece of the semiconductor compound laterally extends over the spacer.

Abstract: A method of making a buffer board of a treadmill includes a sizing step, a shade drying step, a presetting step, a clamping and heat-pressing step, a cooling step, and a die opening step. The method can easily make the desired buffer board adapted to the treadmill and can only change different dies to make buffer boards with different structures when an upper die and a lower die of a die set provide protrusions, flat surfaces or depressed surfaces, thereby reducing the manufacturing cost.

Abstract: A buffer board structure of a treadmill includes bamboo layers made by attaching bamboo sheets side by side, a bottom surface of which is adhered by a membrane layer whereby the bamboo sheets are firmly stuck on the membrane layer. Each membrane layer has an upper and lower faces respectively stuck between the bamboo layers. The bamboo sheets of each bamboo layer face the same juxtaposing direction, whereas bamboo layers juxtaposed lengthways provide a better buffer. By setting one membrane layer between two bamboo layers, contact faces of the bamboo layers and the membrane layer adhered together become smoother, and an adhesive fills in a gap more evenly. A slip resistant layer is stuck on the top bamboo layer. A smoother buffering effect and a stable juxtaposition are obtained when the bamboo layers are trodden to prevent the breakdown of buffer relations between the bamboo sheets and the membrane layers.

Abstract: A method of manufacturing a semiconductor device including the steps of providing a substrate having first type semiconductor regions and second type semiconductor regions, forming a conformal first epitaxy mask layer on the substrate, forming first type epitaxial layer in the substrate of the first type semiconductor regions, forming a conformal second epitaxy mask layer on the substrate, forming second type epitaxial layer in the substrate of the second type semiconductor regions, and removing the second epitaxy mask layer.

Abstract: An etching method adapted to forming grooves in Si-substrate and FinFET transistor manufactured thereof are provided. The etching method includes providing a silicon substrate, at least two gate structures formed on the silicon substrate and at least two gate spacer structures disposed on the silicon substrate; performing a first etching process on the silicon substrate to form a first groove, which has a base and two inclined sidewalls, ascending to respective bottoms of the gate structures, and are interconnected with the base, respectively; and performing a second etching process on the silicon substrate at the base of the first groove, so as to form a second groove in a trench shape, wherein the two inclined sidewalls of the first groove are interconnected with the second groove respectively, and the first etching process is substantially different from the second etching process.

Abstract: A fabrication method of a semiconductor structure includes the following steps. First of all, a gate structure is provided on a substrate, and a first material layer is formed on the substrate and the gate structure. Next, boron dopant is implanted to the substrate, at two sides of the gate structure, to form a first doped region, and P type conductive dopant is implanted to the substrate, at the two sides of the gate structure, to form a second doped region. As following, a second material layer is formed on the first material layer. Finally, the second material layer, the first material layer and the substrate at the two sides of the gate structure are etched sequentially, and a recess is formed in the substrate, at the two sides of the gate structure, wherein the recess is positioned within the first doped region.

Abstract: A FINFET structure is provided. The FINFET structure includes a substrate, a PMOS element, a NMOS element, a STI structure, and a bump structure. The substrate includes a first area and a second area adjacent to the first area. The PMOS element is disposed in the first area of the substrate, and includes at least one first fin structure. The NMOS element is disposed in the second area of the substrate and includes at least one second fin structure. The STI structure is disposed between the first fin structure and the second fin structure. The bump structure is disposed on the STI structure and has a carbon-containing dielectric material.

Abstract: A buffer board structure of a treadmill includes bamboo layers made by attaching bamboo sheets side by side, a bottom surface of which is adhered by a membrane layer whereby the bamboo sheets are firmly stuck on the membrane layer. Each membrane layer has an upper and lower faces respectively stuck between the bamboo layers. The bamboo sheets of each bamboo layer face the same juxtaposing direction, whereas bamboo layers juxtaposed lengthways provide a better buffer. By setting one membrane layer between two bamboo layers, contact faces of the bamboo layers and the membrane layer adhered together become smoother, and an adhesive fills in a gap more evenly. A slip resistant layer is stuck on the top bamboo layer. A smoother buffering effect and a stable juxtaposition are obtained when the bamboo layers are trodden to prevent the breakdown of buffer relations between the bamboo sheets and the membrane layers.

Abstract: An etching method adapted to forming grooves in Si-substrate and FinFET transistor manufactured thereof are provided. The etching method includes providing a silicon substrate, at least two gate structures formed on the silicon substrate and at least two gate spacer structures disposed on the silicon substrate; performing a first etching process on the silicon substrate to form a first groove, which has a base and two inclined sidewalls, ascending to respective bottoms of the gate structures, and are interconnected with the base, respectively; and performing a second etching process on the silicon substrate at the base of the first groove, so as to form a second groove in an inverted -symbol shape, wherein the two inclined sidewalls of the first groove are interconnected with the second groove respectively, and the first etching process is substantially different from the second etching process.

Abstract: A field effect transistor with epitaxial structures includes a fin-shaped structure and a metal gate across the fin-shaped structure. The metal gate includes a pair of recess regions disposed on two sides of the bottom of the metal gate.

Abstract: A field effect transistor (FinFET) device includes a substrate, a fin structure, a shallow trench isolation and a gate structure. The fin structure is formed on a surface of the substrate and includes a base fin structure and an epitaxial fin structure formed on the base fin structure. The shallow trench isolation structure is formed on the surface of the substrate and includes a peripheral zone and a concave zone. The peripheral zone physically contacts with the fin structure. The gate structure is disposed on the epitaxial fin structure perpendicularly. A method of fabricating the aforementioned field effect transistor is also provided.

Abstract: The present invention provides a semiconductor structure, comprising a substrate, a gate structure, a source/drain region and at least a dislocation. The gate structure is disposed on the substrate. The source/drain region is disposed in the substrate at two sides of the gate structure. The dislocation is located in the source/drain region, and is asymmetrical relating to a middle axis of the source/drain region.

Abstract: A FINFET structure is provided. The FINFET structure includes a substrate, a PMOS element, a NMOS element, a STI structure, and a bump structure. The substrate includes a first area and a second area adjacent to the first area. The PMOS element is disposed in the first area of the substrate, and includes at least one first fin structure. The NMOS element is disposed in the second area of the substrate and includes at least one second fin structure. The STI structure is disposed between the first fin structure and the second fin structure. The bump structure is disposed on the STI structure and has a carbon-containing dielectric material.