Patents by Inventor Chung Lam

Chung Lam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7996404
    Abstract: In its broad aspect, the invention provides a method for analyzing relationships among patterns within a data set having a set of samples and associated attribute values defining each attribute of each said sample. The method comprises receiving at an input at least two patterns; defining a data cluster within the data set for each of said at least two patterns, each defined data cluster having samples with attribute values associated with a corresponding pattern of said at least two patterns; grouping at least some of the samples of each defined data cluster with one another to generate a resultant data cluster; and calculating a variation between the attribute values of a first set of samples and the attribute values of a second set of samples within said resultant data cluster, the attribute values of the first set of samples and the second set of samples corresponding to the same attribute.
    Type: Grant
    Filed: January 28, 2009
    Date of Patent: August 9, 2011
    Assignee: Pattern Discovery Technologies Inc.
    Inventors: Andrew Wong, Chung Lam Li
  • Publication number: 20110014623
    Abstract: The present invention provides nucleic acid amplification methods that desirably reduce or eliminate false positive amplification signals resulting from contaminating biological material, e.g., nucleic acid, that may be present in one or more reagents used in an amplification reaction and/or that may be present in the environment in which an amplification reaction is performed. The invention offers the further advantage of requiring less stringent purification and/or sterility efforts than conventionally needed in order to ensure that enzymes and other reagents used in amplification reactions, and the environment in which an amplification reaction is performed, are free of bacterial or other nucleic acid contamination that may yield false positive results.
    Type: Application
    Filed: September 28, 2010
    Publication date: January 20, 2011
    Applicant: GEN-PROBE INCORPORATED
    Inventors: Michael M. BECKER, Kristin W. LIVEZEY, Wai-Chung LAM
  • Patent number: 7833716
    Abstract: A method for selective amplification of at least one target nucleic acid sequence, comprising the steps of: treating a sample with a tagged oligonucleotide comprising a target hybridizing sequence that hybridizes to a 3?-end of the target nucleic acid sequence, and a tag sequence situated 5? to the target hybridizing sequence that does not stably hybridize to a target nucleic acid, wherein tagged oligonucleotide hybridized to target nucleic acids form tagged target nucleic acids; prior to initiating a primer extension reaction, reducing the effective concentration of unhybridized tagged oligonucleotide having an active form; initiating an extension reaction to produce a primer extension product; separating the primer extension product from the target nucleic acid; and producing amplification products therefrom using an oligonucleotide that hybridizes to the complement of the tag sequence.
    Type: Grant
    Filed: June 6, 2007
    Date of Patent: November 16, 2010
    Assignee: Gen-Probe Incorporated
    Inventors: Michael M. Becker, Kristin W. Livezey, Wai-Chung Lam
  • Publication number: 20100195378
    Abstract: A phase change memory device includes a memory cell, first word line conductor and a second word line conductor, and first and second access devices responsive to the first and second word line conductors respectively. Control circuits are arranged to access the memory cell for read operations using only the first word line conductor to establish a current path from the bit line through the memory cell to a source line through the first access device, and to access the memory cell for operations to reset the memory cell using both the first and second access devices to establish a current path from the bit line through the memory cell to two source lines.
    Type: Application
    Filed: April 13, 2010
    Publication date: August 5, 2010
    Applicants: Macronix International Co., Ltd., International Business Machines Corporation
    Inventors: Hsiang Lan Lung, Chung Lam
  • Publication number: 20100159561
    Abstract: Kits for amplifying DNA which include a priming oligonucleotide that hybridizes to a 3?-end of a DNA target sequence, a displacer oligonucleotide that hybridizes to a target nucleic acid containing the DNA target sequence at a position upstream from the priming oligonucleotide, and a promoter oligonucleotide that includes a region that hybridizes to a 3?-region of a DNA primer extension product that includes the priming oligonucleotide and a promoter for an RNA polymerase. The priming oligonucleotide does not include an RNA region that hybridizes to the target nucleic acid and is selectively degraded by an enzyme activity when hybridized to the target nucleic acid. The kits do not include a restriction endonuclease and oligonucleotides that include a promoter for an RNA polymerase are all modified to prevent the initiation of DNA synthesis therefrom.
    Type: Application
    Filed: March 2, 2010
    Publication date: June 24, 2010
    Applicant: GEN-PROBE INCORPORATED
    Inventors: Michael M. BECKER, Wai-Chung LAM, Kristin W. LIVEZEY
  • Patent number: 7713697
    Abstract: Novel methods of synthesizing multiple copies of a target nucleic acid sequence which are autocatalytic are disclosed (i.e., able to cycle automatically without the need to modify reaction conditions such as temperature, pH, or ionic strength and using the product of one cycle in the next one). In particular, methods of nucleic acid amplification are disclosed which are robust and efficient, while reducing the appearance of side-products. In general, the methods use priming oligonucleotides that target only one sense of a target nucleic acid, a promoter oligonucleotide modified to prevent polymerase extension from its 3?-terminus and, optionally, a means for terminating a primer extension reaction, to amplify RNA or DNA molecules in vitro, while reducing or substantially eliminating the formation of side-pro ducts. The disclosed methods minimizes or substantially eliminate the emergence of side-products, thus providing a high level of specificity.
    Type: Grant
    Filed: March 1, 2007
    Date of Patent: May 11, 2010
    Assignee: Gen-Probe Incorporated
    Inventors: Michael M. Becker, Wai-Chung Lam, Kristin W. Livezey
  • Patent number: 7696337
    Abstract: The present invention is directed to novel methods of synthesizing multiple copies of a target nucleic acid sequence which are autocatalytic (i.e., able to cycle automatically without the need to modify reaction conditions such as temperature, pH, or ionic strength and using the product of one cycle in the next one). In particular, the present invention discloses a method of nucleic acid amplification which is robust and efficient, while reducing the appearance of side products. The method uses only one primer, the “priming oligonucleotide,” a 3?blocked promoter oligonucleotide and optionally, a means for terminating a primer extension reaction, to amplify RNA or DNA molecules in vitro, while reducing or eliminating the formation of side products. The method of the present invention minimizes or eliminates the emergence of side products, thus providing a high level of specificity.
    Type: Grant
    Filed: August 26, 2005
    Date of Patent: April 13, 2010
    Assignee: Gen-Probe Incorporated
    Inventors: Michael M. Becker, Steven T. Brentano, Daniel P. Kolk, Wai-Chung Lam, Kristin W. Livezey, Norman C. Nelson, Astrid R. W. Schroder, Gary P. Schroth
  • Publication number: 20100010985
    Abstract: In its broad aspect, the invention provides a method for analyzing relationships among patterns within a data set having a set of samples and associated attribute values defining each attribute of each said sample. The method comprises receiving at an input at least two patterns; defining a data cluster within the data set for each of said at least two patterns, each defined data cluster having samples with attribute values associated with a corresponding pattern of said at least two patterns; grouping at least some of the samples of each defined data cluster with one another to generate a resultant data cluster; and calculating a variation between the attribute values of a first set of samples and the attribute values of a second set of samples within said resultant data cluster, the attribute values of the first set of samples and the second set of samples corresponding to the same attribute.
    Type: Application
    Filed: January 28, 2009
    Publication date: January 14, 2010
    Inventors: Andrew Wong, Chung Lam Li
  • Publication number: 20090181395
    Abstract: Method of detecting methicillin-resistant S. aureus (MRSA) and methicillin-sensitive S. aureus (MSSA) in a nucleic acid coamplification assay. The invention advantageously reduces the incidence of false-positive MRSA determinations in real-time assays by requiring satisfaction of a threshold criterion that excludes certain co-infections from the MRSA determination. The invention further provides for determination of MSSA, even when the MSSA is present in combination with methicillin-resistant coagulase-negative (MR-CoNS) bacteria at high or low levels.
    Type: Application
    Filed: December 19, 2008
    Publication date: July 16, 2009
    Applicant: GEN-PROBE INCORPORATED
    Inventors: Michael M. BECKER, Kui GAO, Wai-Chung LAM
  • Publication number: 20090034323
    Abstract: A phase change memory device includes a memory cell, first word line conductor and a second word line conductor, and first and second access devices responsive to the first and second word line conductors respectively. Control circuits are arranged to access the memory cell for read operations using only the first word line conductor to establish a current path from the bit line through the memory cell to a source line through the first access device, and to access the memory cell for operations to reset the memory cell using both the first and second access devices to establish a current path from the bit line through the memory cell to two source lines.
    Type: Application
    Filed: August 2, 2007
    Publication date: February 5, 2009
    Applicants: Macronix International Co., Ltd., International Business Machines Corporation
    Inventors: Hsiang Lan Lung, Chung Lam
  • Patent number: 7374885
    Abstract: The present invention is directed to novel methods of synthesizing multiple copies of a target nucleic acid sequence which are autocatalytic (i.e., able to cycle automatically without the need to modify reaction conditions such as temperature, pH, or ionic strength and using the product of one cycle in the next one). In particular, the present invention discloses a method of nucleic acid amplification which is robust and efficient, while reducing the appearance of side-products. The method uses only one primer, the “priming oligonucleotide,” a promoter oligonucleotide modified to prevent polymerase extension from its 3?-terminus and, optionally, a means for terminating a primer extension reaction, to amplify RNA or DNA molecules in vitro, while reducing or substantially eliminating the formation of side-products. The method of the present invention minimizes or substantially eliminates the emergence of side-products, thus providing a high level of specificity.
    Type: Grant
    Filed: August 26, 2005
    Date of Patent: May 20, 2008
    Assignee: Gen-Probe Incorporated
    Inventors: Michael M. Becker, Wai-Chung Lam, Kristin W. Livezey, Steven T. Brentano, Daniel P. Kolk, Astrid R. W. Schroder
  • Publication number: 20070299254
    Abstract: The present invention is directed to novel methods of synthesizing multiple copies of a target nucleic acid sequence which are autocatalytic (i.e., able to cycle automatically without the need to modify reaction conditions such as temperature, pH, or ionic strength and using the product of one cycle in the next one). In particular, the present invention discloses a method of nucleic acid amplification which is robust and efficient, while reducing the appearance of side products. The method uses only one primer, the “priming oligonucleotide,” a 3'blocked promoter oligonucleotide and optionally, a means for terminating a primer extension reaction, to amplify RNA or DNA molecules in vitro, while reducing or eliminating the formation of side products. The method of the present invention minimizes or eliminates the emergence of side products, thus providing a high level of specificity.
    Type: Application
    Filed: August 26, 2005
    Publication date: December 27, 2007
    Applicant: GEN-PROBE INCORPORATED
    Inventors: Michael Becker, Wal-Chung Lam, Kristin Livezey, Steven Brentano, Daniel Kolk, Astrid Schroder
  • Publication number: 20070281317
    Abstract: The present invention provides nucleic acid amplification methods that desirably reduce or eliminate false positive amplification signals resulting from contaminating biological material, e.g., nucleic acid, that may be present in one or more reagents used in an amplification reaction and/or that may be present in the environment in which an amplification reaction is performed. The invention offers the further advantage of requiring less stringent purification and/or sterility efforts than conventionally needed in order to ensure that enzymes and other reagents used in amplification reactions, and the environment in which an amplification reaction is performed, are free of bacterial or other nucleic acid contamination that may yield false positive results.
    Type: Application
    Filed: June 6, 2007
    Publication date: December 6, 2007
    Applicant: GEN-PROBE INCORPORATED
    Inventors: Michael Becker, Kristin Livezey, Wai-Chung Lam
  • Publication number: 20070274125
    Abstract: A nonvolatile memory cell includes a bipolar programmable storage element operative to store a logic state of the memory cell, and a metal-oxide-semiconductor device including first and second source/drains and a gate. A first terminal of the bipolar programmable storage element is adapted for connection to a first bit line. The first source/drain is connected to a second terminal of the bipolar programmable storage element, the second source/drain is adapted for connection to a second bit line, and the gate is adapted for connection to a word line.
    Type: Application
    Filed: August 15, 2007
    Publication date: November 29, 2007
    Applicant: International Business Machines Corporation
    Inventors: Johannes Bednorz, John DeBrosse, Chung Lam, Gerhard Meijer, Jonathan Sun
  • Publication number: 20070247893
    Abstract: A nonvolatile memory array includes a plurality of word lines, a plurality of bit lines, a plurality of source lines, and a plurality of nonvolatile memory cells. Each of at least a subset of the plurality of memory cells has a first terminal connected to one of the plurality of word lines, a second terminal connected to one of the plurality of bit lines, and a third terminal connected to one of the plurality of source lines. At least one of the memory cells includes a bipolar programmable storage element operative to store a logic state of the memory cell, a first terminal of the bipolar programmable storage element connecting to one of a corresponding first one of the bit lines and a corresponding first one of the source lines, and a metal-oxide-semiconductor device including first and second source/drains and a gate.
    Type: Application
    Filed: April 21, 2006
    Publication date: October 25, 2007
    Applicant: International Business Machines Corporation
    Inventors: Johannes Bednorz, Chung Lam, Gerhard Meijer
  • Publication number: 20070246748
    Abstract: A memory cell comprises a dielectric layer and a phase change material. The dielectric layer defines a trench having both a wide portion and a narrow portion. The narrow portion is substantially narrower than the wide portion. The phase change material, in turn, at least partially fills the wide and narrow portions of the trench. What is more, the phase change material within the narrow portion of the trench defines a void. Data can be stored in the memory cell by heating the phase change material by applying a pulse of switching current to the memory cell. Advantageously, embodiments of the invention provide high switching current density and heating efficiency so that the magnitude of the switching current pulse can be reduced.
    Type: Application
    Filed: April 25, 2006
    Publication date: October 25, 2007
    Inventors: Matthew Breitwisch, Chung Lam, Jan Philipp, Stephen Rossnagel, Alejandro Schrott
  • Publication number: 20070235708
    Abstract: A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof.
    Type: Application
    Filed: March 30, 2006
    Publication date: October 11, 2007
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Bruce Elmegreen, Lia Krusin-Elbaum, Chung Lam, Dennis Newns, Matthew Wordeman, Albert Young
  • Publication number: 20070235811
    Abstract: Disclosed are a semiconductor structure and a method that allow for simultaneous voltage/current conditioning of multiple memory elements in a nonvolatile memory device with multiple memory cells. The structure and method incorporate the use of a resistor connected in series with the memory elements to limit current passing through the memory elements. Specifically, the method and structure incorporate a blanket temporary series resistor on the wafer surface above the memory cells and/or permanent series resistors within the memory cells. During the conditioning process, these resistors protect the transition metal oxide in the individual memory elements from damage (i.e., burn-out), once it has been conditioned.
    Type: Application
    Filed: April 7, 2006
    Publication date: October 11, 2007
    Applicant: International Business Machines Corporation
    Inventors: Toshijaru Furukawa, Mark Hakey, Steven Holmes, David Horak, Charles Koburger, Chung Lam, Gerhard Meijer
  • Publication number: 20070215874
    Abstract: An integrated circuit and method for fabrication includes first and second structures, each including a set of sub-lithographic lines, and contact landing segments connected to at least one of the sub-lithographic lines at an end portion. The first and second structures are nested such that the sub-lithographic lines are disposed in a parallel manner within a width, and the contact landing segments of the first structure are disposed on an opposite side of a length of the sub-lithographic lines relative to the contact landing segments of the second structure. The contact landing segments for the first and second structures are included within the width dimension, wherein the width includes a dimension four times a minimum feature size achievable by lithography.
    Type: Application
    Filed: March 17, 2006
    Publication date: September 20, 2007
    Inventors: Toshiharu Furukawa, Mark Hakey, Steven Holmes, David Horak, Charles Koburger, Chung Lam
  • Publication number: 20070212810
    Abstract: Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a memory element having a bi-stable layer sandwiched between two conductive layers. A temporary conductor may be applied to a series of cells and used to bulk condition the bi-stable layers of the cells. Also, due to the “U” shape of the cells, a cross point wire array may be used to connect a series of cells. The cross point wire array allows the memory elements of each cell to be individually identified and addressed for storing information and also allows for the information stored in the memory elements in all of the cells in the series to be simultaneously erased using a block erase process.
    Type: Application
    Filed: May 15, 2007
    Publication date: September 13, 2007
    Inventors: Toshijaru Furukawa, Mark Hakey, Steven Holmes, David Horak, Charles Koburger, Chung Lam, Gerhard Meijer