Patents by Inventor Chung-Wen Lan
Chung-Wen Lan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240141480Abstract: Provided is a dual deposition chamber apparatus for producing silicon material, the apparatus including a furnace, a cooling jacket, a deposition device, and a vacuum extraction device. The cooling jacket communicates with the furnace, defines a space above the furnace, and includes an opening communicating with the space. The deposition device includes at least one first deposition substrate and at least one second deposition substrate. The at least one first deposition substrate and the at least one second deposition substrate are arranged side by side in the space, and respectively include a first inner wall surface and a second inner wall surface inclined downwards relative to a vertical axis. An uneven area is formed on the first inner wall surface and the second inner wall surface. The vacuum extraction device communicates with the opening of the cooling jacket.Type: ApplicationFiled: November 2, 2022Publication date: May 2, 2024Inventors: Chung-Wen LAN, Wen-Yi CHIU, Chao-Kun HSIEH, Chao-Hsiang HSIEH
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Publication number: 20240128446Abstract: A method of manufacturing an anode active material is to dope a plurality of anode material particles with alkali metal by use of molten alkali metal to obtain a plurality of alkali-metal-containing anode material particles. The method of the invention is also to perform a homogenization process and a passivation process on the alkali metal-containing anode material particles to obtain a plurality of passivated and homogenized alkali-metal-containing anode material particles serving as the anode active material.Type: ApplicationFiled: October 12, 2023Publication date: April 18, 2024Inventor: Chung-Wen LAN
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Publication number: 20240101432Abstract: A method of manufacturing a silicon-based anode active material is, firstly, to prepare a plurality of silicon-based particles which each is coated with a carbon film. Then, the method of the invention is to immerse the silicon-based particles and a lithium source into a carrier solution, and to heat the carrier solution to obtain a plurality of lithium-containing silicon-based particles. Next, the method of the invention is to heat the lithium-containing silicon-based particles in an inert furnace atmosphere to homogenize the lithium-containing silicon-based particles. Finally, the method of the invention is to immerse the homogenized lithium-containing silicon-based particles into a passivation environment, and to heat the carrier solution to passivate the homogenized lithium-containing silicon-based particles. The passivated and homogenized lithium-containing silicon-based particles serve as the silicon-based anode active material.Type: ApplicationFiled: September 22, 2023Publication date: March 28, 2024Inventor: Chung-Wen LAN
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Publication number: 20230303394Abstract: A method of manufacturing silicon nano-powders and a manufacturing equipment implementing such method. The method according to the invention utilizes a plurality of aluminum powders to react with a silicon tetrahalide into a plurality of silicon nano-powders and an aluminum trihalide to obtain the silicon nano-powders.Type: ApplicationFiled: March 10, 2023Publication date: September 28, 2023Inventor: Chung-Wen LAN
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Patent number: 10138572Abstract: A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.Type: GrantFiled: March 15, 2016Date of Patent: November 27, 2018Assignee: Sino-American Silicon Products Inc.Inventors: Sung-Lin Hsu, Cheng-Jui Yang, Pei-Kai Huang, Sheng-Hua Ni, Yu-Min Yang, Ming-Kung Hsiao, Wen-Huai Yu, Ching-Shan Lin, Wen-Ching Hsu, Chung-Wen Lan
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Publication number: 20180297851Abstract: Present disclosure provides a multicrystalline silicon (mc-Si) brick, including a bottom portion starting from a bottom to a height of 100 mm, a middle portion starting from the height of 100 mm to a height of 200 mm; and a top portion starting from the height of 200 mm to a top. A percentage of incoherent grain boundary in the bottom portion is greater than a percentage of incoherent grain boundary in the top portion. Present disclosure also provides a multicrystalline silicon (mc-Si) wafer. The mc-Si wafer includes a percentage of non-? grain boundary from about 60 to about 75 and a percentage of ?3 grain boundary from about 12 to about 25.Type: ApplicationFiled: June 22, 2018Publication date: October 18, 2018Inventors: Hung-Sheng CHOU, Yu-Min YANG, Wen-Huai YU, Sung Lin HSU, Wen-Ching HSU, Chung-Wen LAN, Yu-Ting WONG
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Patent number: 10087080Abstract: A method of fabricating a poly-crystalline silicon ingot includes: (a) loading a nucleation promotion layer onto a bottom of a mold; (b) providing a silicon source on the nucleation promotion layer in the mold; (c) heating the mold until the silicon source is melted into a silicon melt completely; (d) controlling at least one thermal control parameter regarding the silicon melt continually to enable the silicon melt to nucleate on the nucleation promotion layer such that a plurality of silicon grains grow in the vertical direction; (e) controlling the at least one thermal control parameter to enable the plurality of the silicon grains to continuously grow with an average grain size increasing progressively in the vertical direction until entirety of the silicon melt is solidified to obtain the poly-crystalline silicon ingot, wherein the nucleation promotion layer is loaded by spreading a plurality of mono-Si particles over the bottom of the mold.Type: GrantFiled: November 14, 2016Date of Patent: October 2, 2018Assignee: Sino-American Silicon Products Inc.Inventors: Wen-Huai Yu, Cheng-Jui Yang, Yu-Min Yang, Kai-Yuan Pai, Wen-Chieh Lan, Chan-Lu Su, Yu-Tsung Chiang, Sung-Lin Hsu, Wen-Ching Hsu, Chung-Wen Lan
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Patent number: 10065863Abstract: A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%.Type: GrantFiled: May 1, 2017Date of Patent: September 4, 2018Assignee: Sino-American Silicon Products Inc.Inventors: Wen-Huai Yu, Cheng-Jui Yang, Yu-Min Yang, Kai-Yuan Pai, Wen-Chieh Lan, Chan-Lu Su, Yu-Tsung Chiang, Sung-Lin Hsu, Wen-Ching Hsu, Chung-Wen Lan
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Patent number: 10029919Abstract: Present disclosure provides a multicrystalline silicon (mc-Si) brick, including a bottom portion starting from a bottom to a height of 100 mm, a middle portion starting from the height of 100 mm to a height of 200 mm; and a top portion starting from the height of 200 mm to a top. A percentage of incoherent grain boundary in the bottom portion is greater than a percentage of incoherent grain boundary in the top portion. Present disclosure also provides a multicrystalline silicon (mc-Si) wafer. The mc-Si wafer includes a percentage of non-? grain boundary from about 60 to about 75 and a percentage of ?3 grain boundary from about 12 to about 25.Type: GrantFiled: April 28, 2015Date of Patent: July 24, 2018Assignee: SINO-AMERICAN SILICON PRODUCTS INC.Inventors: Hung-Sheng Chou, Yu-Min Yang, Wen-Huai Yu, Sung Lin Hsu, Wen-Ching Hsu, Chung-Wen Lan, Yu-Ting Wong
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Publication number: 20170233257Abstract: A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%.Type: ApplicationFiled: May 1, 2017Publication date: August 17, 2017Applicant: Sino-American Silicon Products Inc.Inventors: Wen-Huai Yu, Cheng-Jui Yang, Yu-Min Yang, Kai-Yuan Pai, Wen-Chieh Lan, Chan-Lu Su, Yu-Tsung Chiang, Sung-Lin Hsu, Wen-Ching Hsu, Chung-Wen Lan
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Patent number: 9637391Abstract: A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm.Type: GrantFiled: January 14, 2014Date of Patent: May 2, 2017Assignee: Sino-American Silicon Products Inc.Inventors: Wen-Huai Yu, Cheng-Jui Yang, Yu-Min Yang, Kai-Yuan Pai, Wen-Chieh Lan, Chan-Lu Su, Yu-Tsung Chiang, Sung-Lin Hsu, Wen-Ching Hsu, Chung-Wen Lan
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Publication number: 20170057829Abstract: A method of fabricating a poly-crystalline silicon ingot includes: (a) loading a nucleation promotion layer onto a bottom of a mold; (b) providing a silicon source on the nucleation promotion layer in the mold; (c) heating the mold until the silicon source is melted into a silicon melt completely; (d) controlling at least one thermal control parameter regarding the silicon melt continually to enable the silicon melt to nucleate on the nucleation promotion layer such that a plurality of silicon grains grow in the vertical direction; (e) controlling the at least one thermal control parameter to enable the plurality of the silicon grains to continuously grow with an average grain size increasing progressively in the vertical direction until entirety of the silicon melt is solidified to obtain the poly-crystalline silicon ingot, wherein the nucleation promotion layer is loaded by spreading a plurality of mono-Si particles over the bottom of the mold.Type: ApplicationFiled: November 14, 2016Publication date: March 2, 2017Applicant: Sino-American Silicon Products Inc.Inventors: Wen-Huai Yu, Cheng-Jui Yang, Yu-Min Yang, Kai-Yuan Pai, Wen-Chieh Lan, Chan-Lu Su, Yu-Tsung Chiang, Sung-Lin Hsu, Wen-Ching Hsu, Chung-Wen Lan
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Patent number: 9493357Abstract: A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm.Type: GrantFiled: March 9, 2012Date of Patent: November 15, 2016Assignee: Sino-American Silicon Products Inc.Inventors: Wen-Huai Yu, Cheng-Jui Yang, Yu-Min Yang, Kai-Yuan Pai, Wen-Chieh Lan, Chan-Lu Su, Yu-Tsung Chiang, Sung-Lin Hsu, Wen-Ching Hsu, Chung-Wen Lan
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Publication number: 20160194782Abstract: A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.Type: ApplicationFiled: March 15, 2016Publication date: July 7, 2016Applicant: Sino-American Silicon Products Inc.Inventors: Sung-Lin Hsu, Cheng-Jui Yang, Pei-Kai Huang, Sheng-Hua Ni, Yu-Min Yang, Ming-Kung Hsiao, Wen-Huai Yu, Ching-Shan Lin, Wen-Ching Hsu, Chung-Wen Lan
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Patent number: 9337375Abstract: The invention discloses a seed used for crystalline silicon ingot casting. A seed according to a preferred embodiment of the invention includes a crystal and an impurity diffusion-resistant layer. The crystal is constituted by at least one grain. The impurity diffusion-resistant layer is formed to overlay an outer surface of the crystal. A crystalline silicon ingot fabricated by use of the seed of the invention has significantly reduced red zone and yellow zone.Type: GrantFiled: December 23, 2013Date of Patent: May 10, 2016Assignee: Sino-American Silicon Products Inc.Inventors: Hung-Sheng Chou, Yu-Tsung Chiang, Yu-Min Yang, Ming-Kung Hsiao, Wen-Huai Yu, Sung-Lin Hsu, I-Ching Li, Chung-Wen Lan, Wen-Ching Hsu
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Patent number: 9315918Abstract: A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.Type: GrantFiled: March 9, 2012Date of Patent: April 19, 2016Assignee: Sino-American Silicon Products Inc.Inventors: Sung-Lin Hsu, Cheng-Jui Yang, Pei-Kai Huang, Sheng-Hua Ni, Yu-Min Yang, Ming-Kung Hsiao, Wen-Huai Yu, Ching-Shan Lin, Wen-Ching Hsu, Chung-Wen Lan
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Publication number: 20150307361Abstract: Present disclosure provides a multicrystalline silicon (mc-Si) brick, including a bottom portion starting from a bottom to a height of 100 mm, a middle portion starting from the height of 100 mm to a height of 200 mm; and a top portion starting from the height of 200 mm to a top. A percentage of incoherent grain boundary in the bottom portion is greater than a percentage of incoherent grain boundary in the top portion. Present disclosure also provides a multicrystalline silicon (mc-Si) wafer. The mc-Si wafer includes a percentage of non-? grain boundary from about 60 to about 75 and a percentage of ?3 grain boundary from about 12 to about 25.Type: ApplicationFiled: April 28, 2015Publication date: October 29, 2015Inventors: Hung-Sheng CHOU, Yu-Min YANG, Wen-Huai YU, Sung Lin HSU, Wen-Ching HSU, Chung-Wen LAN, Yu-Ting WONG
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Patent number: 9163326Abstract: A crystal growth device includes a crucible and a heater setting. The crucible has a bottom and a top opening. The heater setting surrounds the crucible and is movable relative to the crucible along a top-bottom direction of the crucible and between first and second positions. The heater setting includes a first temperature heating zone and a second temperature heating zone higher in temperature than the first temperature heating zone. The heater setting is in the first position when the crucible is in the second temperature heating zone and in the second position when the crucible is in the first temperature heating zone.Type: GrantFiled: May 24, 2012Date of Patent: October 20, 2015Assignee: Sino-American Silicon Products Inc.Inventors: Chung-Wen Lan, Bruce Hsu, Wen-Huai Yu, Wen-Chieh Lan, Yu-Min Yang, Kai-Yuan Pai, Wen-Ching Hsu
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Patent number: 9109301Abstract: In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.Type: GrantFiled: December 14, 2009Date of Patent: August 18, 2015Assignee: Sino-American Silicon Products, Inc.Inventors: Chung-Wen Lan, Kimsam Hsieh, Wen-Huai Yu, Bruce Hsu, Ya-Lu Tsai, Wen-Ching Hsu, Suz-Hua Ho
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Patent number: 9080252Abstract: An approach is provided for a method to manufacture a crystalline silicon ingot. The method comprises providing a mold formed for melting and cooling a silicon feedstock by using a directional solidification process, disposing a barrier layer inside the mold, disposing one or more silicon crystal seeds on the barrier layer, loading the silicon feedstock on the silicon crystal seeds, heating the mold to obtain a silicon melt, and cooling the mold by the directional solidification process to solidify the silicon melt into a silicon ingot. The mold is heated until the silicon feedstock is fully melted and the silicon crystal seeds are at least partially melted.Type: GrantFiled: April 29, 2011Date of Patent: July 14, 2015Assignee: Sino-American Silicon Products Inc.Inventors: Chung-Wen Lan, Ya-Lu Tsai, Sung-Lin Hsu, Chao-Kun Hsieh, Wen-Chieh Lan, Wen-Ching Hsu