Abstract: A method for forming a solar cell with selective emitters is provided. The method for forming a solar cell with selective emitters includes providing a substrate; forming a first texture structure on a first surface of the substrate; performing a doping process to the first surface of the substrate to form a first doping region in the substrate; forming a pattered barrier layer in a second region on the first surface of the substrate, wherein another portion of the substrate in a first region is exposed; performing a second texture etching process to etch the first region of the substrate uncovered by the patterned barrier layer; removing the patterned barrier layer; and forming an electrode on the second region of the substrate.

Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2˜20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.

Abstract: The invention discloses a seed used for crystalline silicon ingot casting. A seed according to a preferred embodiment of the invention includes a crystal and an impurity diffusion-resistant layer. The crystal is constituted by at least one grain. The impurity diffusion-resistant layer is formed to overlay an outer surface of the crystal. A crystalline silicon ingot fabricated by use of the seed of the invention has significantly reduced red zone and yellow zone.

Abstract: An embodiment of the present invention provides a solar cell. The solar cell includes a semiconductor substrate, a plurality of finger electrodes, and a plurality of bus electrodes. The finger electrodes are disposed on a surface of the semiconductor substrate. The bus electrodes are disposed on the surface of the semiconductor substrate separately. At least one of the bus electrodes includes a plurality of branch electrodes, and the branch electrodes are disposed on the surface of the semiconductor substrate in parallel. An outer side of each of the branch electrodes is connected to at least one of the finger electrodes. This embodiment may help reduce the cost for manufacturing the solar cell.

Abstract: A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm.

Abstract: The invention provides a film deposition apparatus, which includes a first cover and a second cover, wherein the first cover and the second cover are disposed opposite to each other, and the first cover has at least two holes, and a spacer disposed between the first cover and the second cover, wherein the first cover, the spacer and the second cover form a film deposition space.

Abstract: A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm.

Abstract: A crystal growth device includes a crucible and a heater setting. The crucible has a bottom and a top opening. The heater setting surrounds the crucible and is movable relative to the crucible along a top-bottom direction of the crucible and between first and second positions. The heater setting includes a first temperature heating zone and a second temperature heating zone higher in temperature than the first temperature heating zone. The heater setting is in the first position when the crucible is in the second temperature heating zone and in the second position when the crucible is in the first temperature heating zone.

Abstract: A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.

Abstract: The invention provides a film deposition apparatus, which includes a first cover and a second cover, wherein the first cover and the second cover are disposed opposite to each other, and the first cover has at least two holes, and a spacer disposed between the first cover and the second cover, wherein the first cover, the spacer and the second cover form a film deposition space.

Abstract: A surface texturization method is provided. First, a polymer film is formed on a substrate. Thereafter, a heating treatment is performed on the substrate. The heating treatment results in a textured polymer film having island-shaped and/or microcrack-shaped patterns. Afterwards, an etching process is performed using the textured polymer film as a mask, so as to remove a portion of the substrate to form a textured structure on the surface of the substrate.

Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2-20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.

Abstract: An approach is provided for a method to manufacture a crystalline silicon ingot. The method comprises providing a mold formed for melting and cooling a silicon feedstock by using a directional solidification process, disposing a barrier layer inside the mold, disposing one or more silicon crystal seeds on the barrier layer, loading the silicon feedstock on the silicon crystal seeds, heating the mold to obtain a silicon melt, and cooling the mold by the directional solidification process to solidify the silicon melt into a silicon ingot. The mold is heated until the silicon feedstock is fully melted and the silicon crystal seeds are at least partially melted.

Abstract: An anti-reflection coating (ARC) stacked structure including a first ARC layer and a second ARC layer is provided. The first ARC layer is a continuous layer and the second ARC layer, located over the first ARC layer, is formed in fractals. In addition, a solar cell including the ARC stacked structure is further provided.

Abstract: In slicing a crystal bar into silicon wafers, an average about 40% of silicon would be loss due to the widths of slicing wires themselves. The fact that the silicon slurry is discarded as sludge or discarded after recovering silicon carbide particles causes a large waste of cost. If the silicon slurry (40% of silicon) could be recovered as the raw material for growing silicon crystal bars, the production cost would be lowered. The recovery method of silicon slurry according to the present invention could effectively obtain silicon raw material after removing impurities, which could recover the raw material used in solar crystals, further capable of increasing the silicon crystal production and lowering the cost.

Abstract: A solar cell structure includes a semiconductor substrate, a first electrode, a second electrode and at least one via extending through the semiconductor substrate. The first electrode is located in the at least one via, and includes a glass phase and lead oxide, wherein the lead oxide is present in a first weight percentage amount relative to the weight of the glass phase of the first electrode. The second electrode includes a glass phase and lead oxide, and covers the first electrode, wherein the lead oxide of the second electrode is present in a second weight percentage amount relative to the weight of the glass phase of the second electrode. The first weight percentage amount is less than the second weight percentage.

Abstract: A surface texturization method is provided. First, a polymer film is formed on a substrate. Thereafter, a heating treatment is performed on the substrate. The heating treatment results in a textured polymer film having island-shaped and/or microcrack-shaped patterns. Afterwards, an etching process is performed using the textured polymer film as a mask, so as to remove a portion of the substrate to form a textured structure on the surface of the substrate.

Abstract: An atomic layer deposition apparatus is provided. The atomic layer deposition apparatus includes a reaction chamber, a first heater, a second heater, a first gas supply system, a second gas supply system and a vacuum system. The vacuum system is connected to the reaction chamber. The reaction chamber includes a preheating chamber and a plating chamber connected to the preheating chamber. The first heater is for heating the preheating chamber. The first gas supply system is connected to the preheating chamber. The second heater is for heating the plating chamber. The second gas supply system is connected to the plating chamber.

Abstract: A passivation layer structure of a solar cell, disposed on a substrate, is provided. The passivation layer structure has a first passivation layer and a second passivation layer. The first passivation layer is disposed on the substrate. The second passivation layer is disposed between the substrate and the first passivation layer, and the material of the second passivation layer is an oxide of the material of the substrate. Since the second passivation layer is disposed between the substrate and the first passivation layer, the surface passivation effect and carrier lifetime of a photoelectric device are enhanced, and a photoelectric conversion efficiency of the solar cell is increased as well.

Abstract: A crystal growth apparatus and a method for forming a long single crystal with good uniformity are provided. The crystal growth apparatus includes a first crucible, a first heater configured around the first crucible, a second crucible configured inside the first crucible, a pulling system for pulling a crystal, so as to grow the crystal in a crystal growth zone and a moving system for forming a relative movement between the first crucible and the second crucible.