Patents by Inventor Chungxiang Zhu

Chungxiang Zhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Schottky barrier source/drain N-MOSFET using ytterbium silicide
    Publication number: 20090179281
    Abstract: An N-type Schottky barrier Source/Drain Transistor (N-SSDT) that uses ytterbium silicide (YbSi2-x) for the source and drain is described. The structure includes a suitable capping layer stack.
    Type: Application
    Filed: February 4, 2009
    Publication date: July 16, 2009
    Inventors: Shiyang Zhu, Jingde Chen, Sungjoo Lee, Ming Fu Li, Jagar Singh, Chungxiang Zhu, Dim-Lee Kwong