Abstract: An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.

Abstract: Methods for fabricating microelectronic interconnection structures as well as the structures formed by the methods are disclosed which improve the manufacturing throughput for assembling flip chip semiconductor devices. The use of a bilayer of polymeric materials applied on the wafer prior to dicing eliminates the need for dispensing and curing underfill for each semiconductor at the package level, thereby improving manufacturing throughput and reducing cost.

Abstract: The present invention provides polymeric materials that can be used as a moisture/ion barrier layer for inhibiting the penetration of moisture and/or ions for coming into contact with the metal wiring found in chip level interconnects. The present invention also provides a means to protect the chip backside from being contaminated by metal atoms or metal ions which are capable of forming mobile silicides, which can migrate to the active sites of the semiconductor and destroy them. The present invention further provides methods of forming such polymeric barrier layers on at least one surface of an interconnect structure.

Abstract: A structure and method for forming a tamper respondent electronic circuit enclosure that includes an integrated circuit structure, a mesh structure surrounding the integrated circuit structure, and a sealed enclosure surrounding the mesh structure. The mesh structure includes a layer of flexible dielectric having a first side and a second side, a screen-printed pattern of flexible electrically conductive first circuit lines forming a first resistor network on the first side, and a photo lithographically-formed pattern of flexible electrically conductive second circuit lines forming a second resistor network on the second side.

Abstract: An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.

Abstract: A flex or TAB product suitable for chip carrier applications wherein the flex reliability problems caused by copper dendrite growth and lead bending during power and thermal cycling are reduced by application of special coatings to lead areas of the flex tape.

Abstract: An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.

Abstract: Efficiency in light transfer between a light source and a viewing screen is attained in the invention by positioning a small diameter source of light at a position of highest light transfer intensity within an essentially semicircular reflector interfacing at the wide portion of a wedge shaped light pipe light transfer member and minimizing reflection losses at every optical interface in the light path between the light source and the viewer.

Abstract: Passive cooling of a portable personal computer is enhanced by providing a capability for raising one side of a computer with respect to another thus exposing the bottom surface of the computer base to the ambient air with the heat being dissipated providing an air flow over the bottom surface of the base portion of the computer. A mechanism is provided that is actuated by opening the cover that positions the base in a tilted position. An improved keyboard angle also results.

Abstract: The present invention provides polymeric materials that can be used as a moisture/ion barrier layer for inhibiting the penetration of moisture and/or ions for coming into contact with the metal wiring found in chip level interconnects. The present invention also provides a means to protect the chip backside from being contaminated by metal atoms or metal ions which are capable of forming mobile silicides, which can migrate to the active sites of the semiconductor and destroy them. The present invention further provides methods of forming such polymeric barrier layers on at least one surface of an interconnect structure.

Abstract: A solid state chain extension method provides for the formation of a solid state film comprised of a high molecular weight polymer by chain extending a deblocked Lewis base with Lewis acid oligomers while the reactants are in a solid state form. In one embodiment, a negative resist is prepared by selectively exposing regions of the solid state film. The Lewis base is deblocked at the exposed regions by a suitable deblocking means. The Lewis acid oligomers and the deblocked Lewis base chain extend at the exposed regions. Development of the film removes the non-polymerized reactants. Optionally, the Lewis acid oligomers, when radiation-cross-linking, are cross-linked with one another prior to deblocking the Lewis base to form a negative resist. The cross-linked oligomers polymerize with the subsequently deblocked base to provide a high molecular weight polymer film.

Abstract: A thin film transistor display that comprises a black matrix polymer layer, comprising a polymer having an optical density of at least about 0.8 per .mu.m and being self-absorbent of visible light and being selected from the group consisting of substituted and unsubstituted polyanilines, substituted and unsubstituted polyparaphenylenevinylenes, substituted and unsubstituted polythiophenes, substituted and unsubstituted polyazines, substituted and unsubstituted polyparaphenylenes, substituted and unsubstituted polyfuranes, substituted and unsubstituted polypyrroles, substituted and unsubstituted polyselenophene, substituted and unsubstituted poly-p-phenylene sulfides and substituted and unsubstituted polyacetylenes, and mixtures thereof, and copolymers thereof. The layer also comprises one or more pigments. The resistivity of the black matrix composite is 10E12 to 10E14 ohm cm.

Abstract: A flex or TAB product suitable for chip carrier applications wherein the flex reliability problems caused by copper dendrite growth and lead bending during power and thermal cycling are reduced by application of special coatings to lead areas of the flex tape.

Abstract: A solid state chain extension method provides for the formation of a solid state film comprised of a high molecular weight polymer by chain extending a deblocked Lewis base with Lewis acid oligomers while the reactants are in a solid state form. In one embodiment, a negative resist is prepared by selectively exposing regions of the solid state film. The Lewis base is deblocked at the exposed regions by a suitable deblocking means. The Lewis acid oligomers and the deblocked Lewis base chain extend at the exposed regions. Development of the film removes the non-polymerized reactants. Optionally, the Lewis acid oligomers, when radiation-cross-linking, are cross-linked with one another prior to deblocking the Lewis base to form a negative resist. The cross-linked oligomers polymerize with the subsequently deblocked base to provide a high molecular weight polymer film.

Abstract: The present invention relates to an improved flex (or TAB) product suitable for silicon carrier or other types of chip carrier applications, wherein the flex reliability problems caused for example by Cu thermal cycling are substantially reduced or eliminated. More particularly, the invention embodies a number of coatings for use in such products and diverse methods of making and using same.

Abstract: A method of producing a multiphase polymer is disclosed whereby the phases have the same chemical structure but have different morphological states and thus different properties. This is achieved by forming a mixture of precursors of the polymer, at least one of the precursors having a reaction rate higher than the other precursor or precursors in the mixture. The precursor having the highest reaction rate is then converted to obtain a composite of a polymer and the precursors that are not polymerized. This mixture might also be formed by mixing a soluble polymer with its precursor.

Abstract: Polyimide is etched by contacting the polyimide with an aqueous solution of a metal hydroxide followed by contact with an acid followed by contact with an aqueous solution of a metal hydroxide. Etching of chemically cured polyimide can be enhanced by employing a presoaking in hot water. Also, partially etched chemically cured polyimide is removed with a concentrated acid solution.In preparing a metal coated polyimide structure for subsequent gold plating, two flash etching steps with the polyimide etch between are employed after developing the photoresist.