Abstract: The invention includes an engagement mechanism for semiconductor substrate deposition process kit hardware, including a body having a distal portion and a proximal portion. The body is sized for movement through a passageway of a semiconductor substrate deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. At least engager is mounted to the distal portion of the body The engager is sized for movement through said passageway with the body. The engager is configured to releasably engage a component of process kit hardware received within said chamber. The invention includes methods of replacing at least a portion of semiconductor substrate deposition process kit hardware. The invention includes methods of depositing materials over a plurality of semiconductor substrates. Other implementations are contemplated.

Abstract: A method for removing a surface protrusion projecting from a layer of a first material deposited on a surface of a substrate. In accordance with one embodiment of the invention, a layer of a second material is applied on the layer of first material. A sufficient quantity of the second material is removed to expose the surface protrusion. The first material exposed through the surface protrusion is then removed.

Abstract: A method includes removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. A replacement for the removed deposition chamber liner piece is provided into the chamber by passing the replacement through said passageway. A liner apparatus includes a plurality of pieces which when assembled within a selected semiconductor substrate deposition processor chamber are configured to restrict at least a majority portion of all internal wall surfaces which define said semiconductor substrate deposition processor chamber from exposure to deposition material within the chamber. At least some of the pieces are sized for passing completely through a substrates passageway to the chamber through which semiconductor substrates pass into and out of the chamber for deposition processing.

Abstract: A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.

Abstract: A reactive precursor feeding manifold assembly includes a body comprising a plenum chamber. A valve is received proximate the body and has at least two inlets and at least one outlet. At least one valve inlet is configured for connection with a reactive precursor source. At least one valve outlet feeds to a precursor inlet to the plenum chamber. A purge stream is included which has a purge inlet to the plenum chamber which is received upstream of the plenum chamber precursor inlet. The body has a plenum chamber outlet configured to connect with a substrate processing chamber. In one implementation, the plenum chamber purge inlet is angled from the plenum chamber precursor inlet. In one implementation, structure is included on the body which is configured to mount the body to a substrate processing chamber with the plenum chamber outlet proximate to and connected with a substrate processing chamber inlet.

Abstract: A method for polishing a grid of a field emission display (FED) with a polishing slurry contain very small particle of colloidal particles of amorphous silica in an alkaline medium. The method results in highly selective planarization well-suited for chemical-mechanical polishing (CMP) of the grid for the self-aligned CMP-FED fabrication process. An FED grid made according to this method is also disclosed.

Abstract: A feedthrough device for use in deposition chambers such as chemical vapor deposition chambers and atomic layer deposition chambers and methods using the same in association with such chambers as well as chambers so equipped. The feedthrough device includes an associated heating device to maintain the temperature of the feedthrough device above a predetermined level and thus maintain a temperature differential between the deposition chamber body and a vaporize organometallic precursor as it passes therethrough. The feedthrough device may include a helical groove formed along the surface of a longitudinal body portion thereof to complementarily receive a resistance type cable heater. The heater may further include a temperature sensing device to assist in monitoring and controlling the temperature of the feedthrough device.

Abstract: The invention includes a method of forming a layer on a semiconductor substrate that is provided within a reaction chamber. The chamber has at least two inlet ports that terminate in openings. A first material is flowed into the reaction chamber through the opening of a first of the inlet ports. At least a portion of the first material is deposited onto the substrate. The reaction chamber is purged by flowing an inert material into the reaction chamber through the opening of a second of the inlet ports. The inert material passes from the opening and through a distribution head that is positioned within the reaction chamber between the first and second openings. A second material can then be flowed into the chamber through an opening in a third inlet port and deposited onto the substrate. The invention also includes a chemical vapor deposition apparatus.

Abstract: The invention includes a plasma enhanced chemical vapor deposition reactor, and a plasma enhanced chemical vapor deposition process. In one implementation, a plasma enhanced chemical vapor deposition reactor includes a deposition chamber having an electrically conductive RF powered showerhead support electrode. An electrically conductive gas distributing showerhead is mounted to the RF powered showerhead support electrode. A preformed electrically conductive gasket is interposed between the RF powered showerhead support electrode and the gas distributing showerhead.

Abstract: A chemical vapor deposition (CVD) apparatus includes a deposition chamber defined partly by a chamber wall. The chamber wall has an innermost surface inside the chamber and an outermost surface outside the chamber. The apparatus further includes a valve body having a seat between the innermost and outermost surfaces of the chamber wall. The chamber wall can be a lid and the valve can include a portion of the lid as at least a part of the seat. The valve body can include at least a part of a valve housing between the innermost and outermost surfaces of the chamber wall. Such a valve body can even include a portion of the chamber wall as at least part of the valve housing. The deposition apparatus can further include at least a part of a process chemical inlet to the valve body between the innermost and outermost surfaces of the chamber wall. In one example, the chamber wall can form at least a part of the chemical inlet.

Abstract: A chemically sensitive warning apparatus capable of changing colors upon contact with a chemical is disclosed. The apparatus preferably comprises an elongated tape having opposed, first and second major surfaces and warning indicia visible to an individual viewing the first surface to provide visual indication of possible danger or hazardous condition. Mounted to the tape is at least one chemical indicator that is responsive to the presence of at least one chemical by changing colors so as to provide a visual indication of the exposure of the indicator to the chemical. The tape may also include at least one color reference indicia to facilitate interpretation of the color of the chemical indicator when the chemical indicator changes color upon exposure to the chemical.

Abstract: A plurality of planarizing machines for microelectronic substrate assemblies, and methods of mechanical and chemical-mechanical planarization of microelectronic substrate assemblies are disclosed. The planarizing machines for processing microelectronic substrate assemblies generally include a table, a pad support assembly either positioned on or in the table, and a planarizing medium coupled to the pad support assembly. The pad support assembly includes a fluid container and an elastic membrane coupled to the fluid container. The fluid container generally is a basin either that is either a separate component that is attached to the table, or a depression in the table itself. The fluid container can also be a bladder attached to the table. The membrane generally has a first surface engaging a portion of the fluid container to define a fluid chamber or cavity, and the membrane has a second surface to which the planarizing medium is attached.

Abstract: A method for polishing a grid of a field emission display (FED) with a polishing slurry contain very small particle of colloidal particles of amorphous silica in an alkaline medium. The method results in highly selective planarization well-suited for chemical-mechanical polishing (CMP) of the grid for the self-aligned CMP-FED fabrication process. An FED grid made according to this method is also disclosed.

Abstract: The invention includes a plasma enhanced chemical vapor deposition reactor, and a plasma enhanced chemical vapor deposition process. In one implementation, a plasma enhanced chemical vapor deposition reactor includes a deposition chamber having an electrically conductive RF powered showerhead support electrode. An electrically conductive gas distributing showerhead is mounted to the RF powered showerhead support electrode. A preformed electrically conductive gasket is interposed between the RF powered showerhead support electrode and the gas distributing showerhead.

Abstract: A method for removing a surface protrusion projecting from a layer of a first material deposited on a surface of a substrate. In accordance with one embodiment of the invention, a layer of a second material is applied on the layer of first material. A sufficient quantity of the second material is removed to expose the surface protrusion. The first material exposed through the surface protrusion is then removed.

Abstract: A method for removing a surface protrusion projecting from a layer of a first material deposited on a surface of a substrate. In accordance with one embodiment of the invention, a layer of a second material is applied on the layer of first material. A sufficient quantity of the second material is removed to expose the surface protrusion. The first material exposed through the surface protrusion is then removed.

Abstract: The invention includes a plasma enhanced chemical vapor deposition reactor, and a plasma enhanced chemical vapor deposition process. In one implementation, a plasma enhanced chemical vapor deposition reactor includes a deposition chamber having an electrically conductive RF powered showerhead support electrode. An electrically conductive gas distributing showerhead is mounted to the RF powered showerhead support electrode. A preformed electrically conductive gasket is interposed between the RF powered showerhead support electrode and the gas distributing showerhead.

Abstract: A plurality of planarizing machines for microelectronic substrate assemblies, and methods of mechanical and chemical-mechanical planarization of microelectronic substrate assemblies are disclosed. The planarizing machines for processing microelectronic substrate assemblies generally include a table, a pad support assembly either positioned on or in the table, and a planarizing medium coupled to the pad support assembly. The pad support assembly includes a fluid container and an elastic membrane coupled to the fluid container. The fluid container generally is a basin either that is either a separate component that is attached to the table, or a depression in the table itself. The fluid container can also be a bladder attached to the table. The membrane generally has a first surface engaging a portion of the fluid container to define a fluid chamber or cavity, and the membrane has a second surface to which the planarizing medium is attached.

Abstract: A method for polishing a grid of a field emission display (FED) with a polishing slurry contain very small particle of colloidal particles of amorphous silica in an alkaline medium. The method results in highly selective planarization well-suited for chemical-mechanical polishing (CMP) of the grid for the self-aligned CMP-FED fabrication process. An FED grid made according to this method is also disclosed.

Abstract: A base structure for use with a flat panel field emission display device. A spacer layer is provided in the base assembly to generally planarize the base assembly prior to mechanical planarization. As a result, the base assembly is more reliable and permits improved manufacturing yields. In addition to improving planarity of the base assembly, the spacer layer may increase electrical isolation between the base electrodes and the grid electrodes of the field emission display.