Abstract: A method for forming an alignment layer for a liquid crystal display includes preparing a substrate, applying an alignment material for initial alignment of a liquid crystal, and applying a field flux (e.g., an electric or magnetic field) to the alignment material to determine the alignment direction of the alignment material. Further disclosed is an apparatus for forming an alignment layer for a liquid crystal display. The apparatus comprises a substrate stage on which a substrate is mounted, and an electric or magnetic field generator installed at the periphery of the substrate stage. According to the method and the apparatus, since the alignment direction of an alignment material is determined by using an electric or magnetic field, no physical contact with a substrate is required and thus the problem of light leakage caused by rubbing alignment is solved.

Abstract: A method for providing a Graphical User Interface (GUI) and an electronic device using the same are provide. The method for providing a GUI includes receiving rotation information from an external input device by sensing movement of the external input device, and changing a display state of information output on a display using the rotation information of the external input device. Therefore, a user can output setup information conveniently, and user's convenience is provided.

Abstract: An organic thin film transistor and a method for fabricating the same are disclosed. The method for fabricating the organic thin film transistor includes forming a gate electrode on a substrate. A gate insulating layer is formed on an entire surface of the substrate including the gate electrode, and source and drain electrodes are formed at a predetermined interval from each other on the gate insulating layer. An organic semiconductor layer is formed on the entire surface of the substrate and a first protection layer is formed on the organic semiconductor layer. The first protection layer is patterned and the organic semiconductor layer etched using the remaining first protection layer as a mask. A second protection layer is then formed on the entire surface of the substrate.

Abstract: A thin film transistor includes a substrate, a crystallized semiconductor layer formed over the substrate having a channel region, low-density impurity regions and high-density impurity regions, a gate insulating layer formed on the crystallized semiconductor layer, a first gate electrode formed on the gate insulating layer having a width corresponding to the channel region, a second gate electrode formed on the first gate electrode and on the gate insulating layer such that the second gate electrode overlaps the low-density impurity regions and a source electrode and a drain electrode respectively contacting the high-density impurity regions.

Abstract: Disclosed is a display device including a thin film transistor. A method for forming the display device includes forming an organic semiconductor pattern in the presence of a magnetic field or an electric field. Due to the presence of a magnetic field or an electric field, the molecules of the organic semiconductor layer of the thin film transistor are substantially aligned in a predetermined direction.

Abstract: Provided is a electrophoresis type display device includes a pixel electrode and a common electrode on a substrate and inducing an in-plane electric field; an electric charge layer on the pixel electrode and common electrode and having a plurality of first particles and a plurality of second particles, the first and second particles charged with opposite polarities; and a backlight unit supplying light toward the substrate.

Abstract: A jig for a flexible substrate comprises a glass plate having a concave portion and a plurality of grooves at periphery of the concave portion. The jig further comprises a plurality of fixing elements inserted in the plurality of grooves to fix the flexible substrate to the glass plate.

Abstract: A substrate transferring method and a method for fabricating a flexible display by using the same are disclosed. The method for transferring a substrate includes providing a glass substrate with a recess formed thereon, aligning a flexible substrate on the glass substrate, inserting the flexible substrate in the recess of the glass substrate, and transferring the flexible substrate-inserted glass substrate for a process. The flexible substrate is insertedly fixed in the recess of the glass substrate and transferred, or a process is performed thereon, so that the transfer method is simplified and the process stability can be obtained.

Abstract: A method for fabricating an organic thin film transistor includes forming a gate electrode on a substrate, forming a gate insulating layer on the substrate including the gate electrode, forming an organic active pattern on the gate insulating layer using a rear exposing process, and forming source and drain electrodes on the organic active pattern.

Abstract: A thin film transistor includes a substrate, a crystallized semiconductor layer formed over the substrate having a channel region, low-density impurity regions and high-density impurity regions, a gate insulating layer formed on the crystallized semiconductor layer, a first gate electrode formed on the gate insulating layer having a width corresponding to the channel region, a second gate electrode formed on the first gate electrode and on the gate insulating layer such that the second gate electrode overlaps the low-density impurity regions and a source electrode and a drain electrode respectively contacting the high-density impurity regions.

Abstract: A thin film transistor includes a substrate, a crystallized semiconductor layer formed over the substrate having a channel region, low-density impurity regions and high-density impurity regions, a gate insulating layer formed on the crystallized semiconductor layer, a first gate electrode formed on the gate insulating layer having a width corresponding to the channel region, a second gate electrode formed on the first gate electrode and on the gate insulating layer such that the second gate electrode overlaps the low-density impurity regions and a source electrode and a drain electrode respectively contacting the high-density impurity regions.

Abstract: A method for forming a pattern, including the steps of preparing a cliché having a recess thereon corresponding to a position of a pattern, filling one of resist and ink within the recess of the cliché, affixing a substrate on which the pattern is to be formed on a loading plate, aligning the loading plate on the cliché, attaching the substrate on the loading plate to the cliché, and separating the substrate on the loading plate from the cliché.

Abstract: A method for fabricating a thin film transistor includes forming a buffer layer on a substrate, forming a first amorphous silicon layer on the buffer layer, forming a plurality of metal clusters on the first amorphous silicon layer, forming a second amorphous silicon layer on the metal clusters including the first amorphous silicon layer, and simultaneously applying a heat-treatment and an electrical field to crystallize the first and the second amorphous silicon layers.

Abstract: A method for forming a pattern, including the steps of preparing a cliché having a recess thereon corresponding to a position of a pattern, filling one of resist and ink within the recess of the cliché, affixing a substrate on which the pattern is to be formed on a loading plate, aligning the loading plate on the cliché, attaching the substrate on the loading plate to the cliché, and separating the substrate on the loading plate from the cliché.

Abstract: A method for fabricating a thin film transistor includes forming a buffer layer on a substrate, forming a first amorphous silicon layer on the buffer layer, forming a plurality of metal clusters on the first amorphous silicon layer, forming a second amorphous silicon layer on the metal clusters including the first amorphous silicon layer, and simultaneously applying a heat-treatment and an electrical field to crystallize the first and the second amorphous silicon layers.