Abstract: A hybrid plasma reactor includes a reactor body having a plasma discharge space, a gas inlet, and a gas outlet; a hybrid plasma source including a first hybrid electrode and a second hybrid electrode, which face each other while the reactor body is positioned therebetween and provide a current path having one or more turns, to be inductively and capacitively coupled to plasma formed in the plasma discharge space; and an alternating switching power supply for supplying plasma generation power to the first hybrid electrode and the second hybrid electrode. The hybrid plasma reactor can complexly generate capacitively coupled plasma and inductively coupled plasma, thereby achieving a wide operation area from a low-pressure area to a high-pressure area.

Abstract: The present invention relates to hydroxamate compounds of the following formula I, an isomer, pharmaceutically acceptable salt or hydrate thereof. The present invention also relates to a method for preparing the hydroxamate compounds, comprising allowing a compound of the following formula II to react with bromoaniline in the presence of an inorganic salt so as to prepare a compound of the following formula III.

Abstract: Provided is a plasma reactor having a dual inductively coupled plasma source that includes a plasma reactor body having a substrate processing area and a dielectric window which comes in contact with the substrate processing area; and a plasma source including a first antenna for providing first induced electromotive force for generating plasma onto a central area of the substrate processing area through the dielectric window and a second antenna for providing second induced electromotive force for generating the plasma onto an outer area of the substrate processing area, wherein a TSV is formed at a target substrate within the substrate processing area by repeatedly performing a deposition process and an etch process using the plasma generated through the dual inductively coupled plasma source.

Abstract: The following description relates to a plasma processing apparatus and a method thereof. The plasma processing apparatus comprises a first plasma chamber having a first plasma discharge space, a first plasma source for supplying a first activation energy to the first plasma discharge space within the first plasma chamber, a second plasma chamber which is connected to the first plasma chamber and has a second discharge space, and a second plasma source for supplying a second activation energy for inducing inductive coupled plasma to the second plasma discharge space within the second plasma chamber.

Abstract: The present invention relates to hydroxamate derivatives, isomers thereof, pharmaceutically acceptable salts thereof, hydrates thereof, or solvates thereof, the use thereof for preparing pharmaceutical compositions, pharmaceutical compositions containing the same, a method of treating disease using the compositions, and a method for preparing the hydroxamate derivatives.

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract: Disclosed is a multi-inductively coupled plasma reactor and method thereof. In a multi-inductively coupled plasma reacting method, an etching method to increase a specific portion of a substrate to be processed includes etching a specific portion of a substrate to be processed; and depositing a passivation layer on a surface of the specific portion etched, wherein the etching and depositing steps are repeatedly proceeded, and one of both steps is executed when there is plasma formed by a central plasma source and a peripheral plasma source. According to the multi-inductively coupled plasma reactor and method thereof of the invention, it is possible that plasma is uniformly processed on the entire area of the substrate since the central plasma source and the peripheral source are provided separately.

Abstract: A plasma source with discharge inducing bridges and a plasma processing system using the same. The plasma source may be constructed with a number of discharge inducing bridges, each discharge inducing bridge containing a magnetic core with a primary winding of a transformer. The discharge inducing bridges are positioned so as to face a susceptor. Each discharge inducing bridge is a hollow tube. When the electrical current of the primary winding of the transformer is driven, magnetic flux is induced to the magnetic core, so that inductive coupled plasma is formed around the discharge inducing bridges, and a plasma discharge is evenly induced horizontally/vertically along the discharge inducing bridges, so that uniform large-area high-density plasma is generated.

Abstract: Provided is a plasma processing system comprising: a plasma reactor generating plasma by receiving an input gas; and a radio frequency generator supplying radio frequency. The radio frequency generator supplies radio frequency power for plasma generation to the plasma reactor, wherein upon power interruption within a predetermined time occurring during the operation of the plasma reactor, the radio frequency generator re-supplies the radio frequency power, without discontinuing the operation of the plasma reactor, after power returns. Thereby, the plasma reactor stably maintains plasma upon momentary power interruption.

Abstract: There is provided a plasma reactor with an internal transformer. The plasma reactor comprises: a plasma chamber with a gas inlet and a gas outlet, for providing a plasma discharging space; one or more core cylinder jackets for providing a core storage space in the plasma discharging space and forming a plasma centralized channel and a plasma decentralized channel by including one or more through-apertures; and one or more transformers each including a magnetic core with primary winding surrounding the through-aperture and installed in the core storage space, wherein the plasma discharging space comprises one or more first spatial regions to form the plasma centralized channel and one or more second spatial regions to form the plasma decentralized channel. In the plasma reactor, since the transformer is installed in the plasma chamber, energy is transferred with almost no loss from the transformer to the plasma discharging space and therefore the energy transfer efficiency is very high.

Abstract: A plasma reaction chamber includes a chamber housing having two inner connection passages for connecting two vacuum chambers to other vacuum chambers. Two vacuum chambers and two inner connection passages form a continuous discharge path. At least one magnetic core is mounted in two vacuum chambers or two inner connection passages, and a coil connected to a power source is wounded around the magnetic core so as to transfer induced electromotive force to the continuous discharge path. The plasma reaction chamber is configured so that at least two vacuum chambers are integrated in a multiple arrangement, and common parts are shared in common, so that at least two substrates may be treated in parallel at the same time, thereby improving productivity per unit area and making it possible to construct a low-cost and high-efficient substrate treatment system.

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract: There is provided a plasma reactor comprising: a vacuum chamber having a substrate support on which a treated substrate is positioned; a gas shower head supplying gas into the interior of the vacuum chamber; a dielectric window installed at an upper portion of the vacuum chamber; and a radio frequency antenna installed above the dielectric window. The gas shower head and the substrate support are capacitively coupled to plasma in the interior of the vacuum chamber and the radio frequency antenna is inductively coupled to the plasma in the interior of the vacuum chamber. The capacitive and inductive coupling of the plasma reactor allows generation of plasma in a large area inside the vacuum chamber more uniformly and more accurate control of plasma ion energy, thereby increasing the yield and the productivity. The plasma reactor includes a magnetic core installed above the dielectric window so that an entrance for a magnetic flux faces the interior of the vacuum chamber and covers the radio frequency antenna.

Abstract: There is provided an inductively coupled plasma reactor. The inductively coupled plasma reactor is connected to a transformer with multiple magnetic cores and a primary winding, to transfer an electromotive force for plasma discharge to a plasma discharge chamber of a reactor body. Parts of magnetic core positioned in side the plasma discharge chamber are protected by being entirely covered by a core protecting tube. The primary winding is electrically connected to a power supply source providing radio frequency power. In the inductively coupled plasma reactor, since a number of magnetic core cross sectional parts are positioned inside the plasma discharge chamber, the efficiency of transferring the inductively coupled energy to be connected with plasma is very high.

Abstract: Provided is a plasma processing system comprising: a plasma reactor generating plasma by receiving an input gas; and a radio frequency generator supplying radio frequency. The radio frequency generator supplies radio frequency power for plasma generation to the plasma reactor, wherein upon power interruption within a predetermined time occurring during the operation of the plasma reactor, the radio frequency generator re-supplies the radio frequency power, without discontinuing the operation of the plasma reactor, after power returns. Thereby, the plasma reactor stably maintains plasma upon momentary power interruption.

Abstract: The present invention relates to a plasma process chamber, which includes: an upper housing having a gas inlet connected to a gas source, and a gas shower head placed in the upper housing; and a lower housing having a gas outlet connected to a vacuum pump, and a substrate provided on the inner bottom of the lower housing. On the substrate is placed a wafer. A plasma reactor is provided between the upper housing and the lower housing of the plasma process chamber. The plasma reactor is provided on the outer circumference of its main body with at least one reactor tube of horseshoe shape. A closed magnetic core is attached to the reactor tube, and a coil is wound on said magnetic core. The coil is connected electrically to an A.C. power. The plasma reactor is placed in the middle area of the plasma process chamber and a plurality of the reactor tubes are provided on the outer circumference of the plasma reactor so that plasma reaction is generated and distributed evenly in the plasma process chamber.

Abstract: A method for generating a plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. For example, a gas is flowed through a pipe in a first direction. Electricity is conducted through the pipe in substantially the first direction. And a magnetic field is applied along a second direction (e.g., perpendicular to the first direction) to the gas flowing in the pipe such that a plasma is induced in the pipe.

Abstract: A plasma source with discharge inducing bridges and a plasma processing system using the same. The plasma source may be constructed with a number of discharge inducing bridges, each discharge inducing bridge containing a magnetic core with a primary winding of a transformer. The discharge inducing bridges are positioned so as to face a susceptor. Each discharge inducing bridge is a hollow tube. When the electrical current of the primary winding of the transformer is driven, magnetic flux is induced to the magnetic core, so that inductive coupled plasma is formed around the discharge inducing bridges, and a plasma discharge is evenly induced horizontally/vertically along the discharge inducing bridges, so that uniform large-area high-density plasma is generated.

Abstract: A surface light source includes a discharge tube, a power source, and a surface light source control part. The discharge tube includes a plurality of lighting areas. Each lighting area has a discharge electrode part. The power source applies electric power to the discharge electrode parts. The surface light source control part separately controls brightness of each lighting area by separately controlling electric power levels applied to the discharge electrode part of each lighting area, respectively. Therefore, relatively high contrasts and relatively low power consumption are obtained.