Abstract: A surface light source includes a discharge tube, a power source, and a surface light source control part. The discharge tube includes a plurality of lighting areas. Each lighting area has a discharge electrode part. The power source applies electric power to the discharge electrode parts. The surface light source control part separately controls brightness of each lighting area by separately controlling electric power levels applied to the discharge electrode part of each lighting area, respectively. Therefore, relatively high contrasts and relatively low power consumption are obtained.

Abstract: A plasma reaction chamber includes a chamber housing having two inner connection passages for connecting two vacuum chambers to other vacuum chambers. Two vacuum chambers and two inner connection passages form a continuous discharge path. At least one magnetic core is mounted in two vacuum chambers or two inner connection passages, and a coil connected to a power source is wounded around the magnetic core so as to transfer induced electromotive force to the continuous discharge path. The plasma reaction chamber is configured so that at least two vacuum chambers are integrated in a multiple arrangement, and common parts are shared in common, so that at least two substrates may be treated in parallel at the same time, thereby improving productivity per unit area and making it possible to construct a low-cost and high-efficient substrate treatment system.

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract: An apparatus for matching the impedance of an RF generator to the impedance of an RF load, for use in manufacturing semiconductor devices by using a plasma. The apparatus includes a variable inductor coupled to a variable capacitor and an invariable capacitor, the variable inductor having two inductors coupled electrically with each other in series and disposed adjacent to each other. At least one of the two inductors is disposed movably to make the magnetic flux of the one inductor interfere with the magnetic flux of the other inductor, thereby to control the inductance of the variable inductor. In the case of a plasma enhanced semiconductor wafer processing system, the apparatus can reduce the time necessary to achieve an RF match between the RF generator and the RF load, thereby increasing the life of the apparatus.

Abstract: A remote plasma generator receives an A.C. source supplied from an A.C. power, ionizes process gas supplied from a gas source, generates plasma gas, and remotely supplies the generated gas to a process chamber. The remote plasma generator includes a main body with a gas inlet that is connected to the gas source and a gas outlet that is connected to the process chamber. A core cylinder is installed within the main body and cylindrical-shaped with an opening penetrating its center. A ring-shaped core is installed on the core cylinder. A connection pipe is included for connecting the outer surface of the main body to the inner surface of the core cylinder. An inductor coil is wound on the ring-shaped core and exposed to the outside of the main body via the connection pipe so as to be electrically connected to the A.C. power.

Abstract: An inductively coupled plasma source may be constructed with a reactor including a gas inlet, a gas outlet, and a tube structure containing an electrically conductive layer with an open loop. The tube structure is disposed between two electrically non-conductive layers that form a continuous loop providing a discharge path. An A.C. power source supplies A.C. voltage to the conductive layer while a D.C. power source supplies a direct current voltage to the conductive layer. An inductor is electrically connected between the conductive layer and the D.C. power source and a capacitor is electrically connected between the conductive layer and the A.C. power source. The conductive layer is biased by the D.C. voltage applied by the D.C. voltage. Induction of a magnetic field is generated by the flow of current of conductive layer to which the A.C.

Abstract: The present invention relates to a plasma process chamber, which includes: an upper housing having a gas inlet connected to a gas source, and a gas shower head placed in the upper housing; and a lower housing having a gas outlet connected to a vacuum pump, and a substrate provided on the inner bottom of the lower housing. On the substrate is placed a wafer. A plasma reactor is provided between the upper housing and the lower housing of the plasma process chamber. The plasma reactor is provided on the outer circumference of its main body with at least one reactor tube of horseshoe shape. A closed magnetic core is attached to the reactor tube, and a coil is wound on said magnetic core. The coil is connected electrically to an A.C. power. The plasma reactor is placed in the middle area of the plasma process chamber and a plurality of the reactor tubes are provided on the outer circumference of the plasma reactor so that plasma reaction is generated and distributed evenly in the plasma process chamber.

Abstract: A method and an apparatus for generating a plasma, and a method and an apparatus for manufacturing a semiconductor device using the plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. The gas plasma is provided into a processing chamber to perform a process for manufacturing the semiconductor device.

Abstract: A remote plasma generator receives an A.C. source supplied from an A.C. power, ionizes process gas supplied from a gas source, generates plasma gas, and remotely supplies the generated gas to a process chamber. The remote plasma generator includes a main body with a gas inlet that is connected to the gas source and a gas outlet that is connected to the process chamber. A core cylinder is installed within the main body and cylindrical-shaped with an opening penetrating its center. A ring-shaped core is installed on the core cylinder. A connection pipe is included for connecting the outer surface of the main body to the inner surface of the core cylinder. An inductor coil is wound on the ring-shaped core and exposed to the outside of the main body via the connection pipe so as to be electrically connected to the A.C. power.

Abstract: An inductively coupled plasma source may be constructed with a reactor including a gas inlet, a gas outlet, and a tube structure containing an electrically conductive layer with a open loop. The tube structure is disposed between two electrically non-conductive layers that form a continuous loop providing a discharge path. An A.C. power source supplies A.C. voltage to the conductive layer while a D.C. power source supplies a direct current voltage to the conductive layer. An inductor is electrically connected between the conductive layer and the D.C. power source and a capacitor is electrically connected between the conductive layer and the A.C. power source. The conductive layer is biased by the D.C. voltage applied by the D.C. voltage. Induction of a magnetic field is generated by the flow of current of conductive layer to which the A.C.

Abstract: A plasma dry scrubber may be constructed with a RF generator that applies a high frequency signal, via an impedance matching unit, to first and second antennas provided at upper and lower parts, respectively, of a plasma generator. Gas flowing into the plasma generator is decomposed by magnetic fields generated by the antennas, and the decomposed gas is discharged to a vacuum pump via a gas outlet pipe. The magnetic fields generated by the antennas are distributed more uniformly in a plasma generating chamber so that plasma discharge is accompanied uniformly. Non-conductive isolating plates made of ceramic of quartz isolate the antennas from the plasma generating chamber. The thickness of the isolating plates may be altered, if required, whereby any damage to the plasma dry scrubber due to the pressure from a vacuum pump, is prevented, even if it is used for a long time.

Abstract: An apparatus for matching the impedance of an RF generator to the impedance of an RF load, for use in manufacturing semiconductor devices by using a plasma. The apparatus includes a variable inductor coupled to a variable capacitor and an invariable capacitor, the variable inductor having two inductors coupled electrically with each other in series and disposed adjacent to each other. At least one of the two inductors is disposed movably to make the magnetic flux of the one inductor interfere with the magnetic flux of the other inductor, thereby to control the inductance of the variable inductor. In the case of a plasma enhanced semiconductor wafer processing system, the apparatus can reduce the time necessary to achieve an RF match between the RF generator and the RF load, thereby increasing the life of the apparatus.

Abstract: A plasma dry scrubber for scrubbing gas comprises a plasma generator, an impedance matching unit, and an RF generator. A high frequency signal generated by the RF generator is fed, via the impedance matching unit, to first and second antennas, which are provided at the upper and lower parts, respectively, of the plasma generator. Gas flowing into the plasma generator is decomposed by means of magnetic fields generated by the first and second antennas, and the decomposed gas is discharged to a vacuum pump via a gas outlet pipe. The magnetic fields generated by first and second antennas are distributed more uniformly in a plasma generating chamber so that plasma discharge is accomplished uniformly. Furthermore, the non-conductive isolating plates are made of ceramic or quartz so as to isolate the first and second antennas, respectively, from the plasma generating chamber.